NP82N06PLG [NEC]
SWITCHING N-CHANNEL POWER MOS FET; 切换N沟道功率MOS FET型号: | NP82N06PLG |
厂家: | NEC |
描述: | SWITCHING N-CHANNEL POWER MOS FET |
文件: | 总8页 (文件大小:197K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP82N06PLG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP82N06PLG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
Pure Sn (Tin)
PACKING
PACKAGE
NP82N06PLG-E1-AY Note
NP82N06PLG-E2-AY Note
Tape
TO-263 (MP-25ZP)
800 p/reel
Note Pb-free (This product does not contain Pb in the external electrode.)
FEATURES
(TO-263)
• Super low on-state resistance
RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 41 A)
RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 41 A)
• Low input capacitance
Ciss = 5700 pF TYP.
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
60
20
V
V
82
A
270
A
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
143
W
W
°C
°C
A
PT2
1.8
Tch
175
Storage Temperature
Tstg
−55 to +175
37
Repetitive Avalanche Current Note2
Repetitive Avalanche Energy Note2
IAR
EAR
137
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
1.05
83.3
°C/W
°C/W
Rth(ch-A)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18777EJ1V0DS00 (1st edition)
Date Published June 2007 NS
Printed in Japan
2007
NP82N06PLG
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
IDSS
VDS = 60 V, VGS = 0 V
1
μA
μA
IGSS
VGS = 20 V, VDS = 0 V
VDS = VGS, ID = 250 μA
VDS = 10 V, ID = 41 A
VGS = 10 V, ID = 41 A
VGS = 5 V, ID = 41 A
VDS = 25 V,
10
Gate to Source Threshold Voltage Note
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
VGS(th)
| yfs |
RDS(on)1
RDS(on)2
Ciss
1.5
19
2.0
40
2.5
V
S
5.1
6.4
6.7
8.5
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Input Capacitance
5700 8550
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Coss
Crss
VGS = 0 V,
420
275
28
630
500
70
f = 1 MHz
td(on)
tr
VDD = 30 V, ID = 41 A,
VGS = 10 V,
22
60
Turn-off Delay Time
Fall Time
td(off)
tf
RG = 0 Ω
79
160
30
9
Total Gate Charge
QG
VDD = 48 V,
106
29
160
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage Note
Reverse Recovery Time
Reverse Recovery Charge
Note Pulsed
QGS
QGD
VF(S-D)
trr
VGS = 10 V,
ID = 82 A
35
IF = 82 A, VGS = 0 V
IF = 82 A, VGS = 0 V,
di/dt = 100 A/μs
0.9
43
1.5
ns
nC
Qrr
65
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
D.U.T.
V
V
GS
0
RG
= 25 Ω
50 Ω
R
L
90%
V
GS
Wave Form
V
GS
10%
90%
R
G
PG.
VDD
PG.
GS = 20 → 0 V
VDD
V
DS
90%
V
DS
V
0
GS
BVDSS
10% 10%
V
DS
Wave Form
0
I
AS
V
DS
I
D
τ
t
d(on)
t
r
t
d(off)
tf
V
DD
t
on
toff
τ = 1
μs
Duty Cycle ≤ 1%
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
= 2 mA
I
G
RL
50 Ω
PG.
VDD
2
Data Sheet D18777EJ1V0DS
NP82N06PLG
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
160
140
120
100
80
100
80
60
40
20
0
60
40
20
0
0
25
50
75 100 125 150 175
0
25
50
75 100 125 150 175
TC - Case Temperature - °C
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
10
I
D(pulse)
I
D(DC)
DC
1
T
C
= 25°C
Single Pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
10
Rth(ch-A) = 83.3°C/Wi
1
Rth(ch-C) = 1.05°C/Wi
0.1
0.01
Single Pulse
100 1000
100μ
1 m
10 m
100 m
1
10
PW - Pulse Width - s
3
Data Sheet D18777EJ1V0DS
NP82N06PLG
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
300
200
100
0
1000
100
10
V
DS = 10 V
V
GS = 10 V
Pulsed
5 V
T
A
= 175°C
150°C
125°C
85°C
1
25°C
−25°C
−55°C
0.1
0.01
0.001
Pulsed
0
1
2
3
4
5
0
2
4
6
8
10
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
2.5
100
10
1
V
DS = 10 V
Pulsed
2
1.5
1
T
A
=
−
55
°
C
−25
°
C
25
°
C
85
125
150
175
°
°
°
°
C
C
C
C
0.5
V
DS = VGS
I
D
= 250 μA
0
0.1
1
10
100
-100
-50
0
50
100
150
200
ID - Drain Current - A
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
14
12
10
8
14
12
10
I
D
= 82 A
41 A
8
6
4
2
0
V
GS = 5 V
6
4
2
0
10 V
16.4 A
Pulsed
Pulsed
1
10
100
1000
0
5
10
15
20
ID - Drain Current - A
VGS - Gate to Source Voltage - V
4
Data Sheet D18777EJ1V0DS
NP82N06PLG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
14
10000
1000
100
I
D
= 41 A
12
10
8
Pulsed
C
iss
V
GS = 5 V
C
oss
rss
6
10 V
4
C
VGS = 0 V
2
f = 1 MHz
0
-100
-50
0
50
100
150
200
0.1
1
10
100
Tch - Channel Temperature - °C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
12
1000
100
10
60
50
40
30
20
10
0
V
DD = 48 V
30 V
10
8
12 V
t
d(off)
t
d(on)
6
V
GS
t
r
4
t
f
V
V
DD = 30 V
GS = 10 V
V
DS
2
D
I = 82 A
RG = 0 Ω
1
0
0.1
1
10
100
0
20
40
60
80
100
120
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
100
10
100
V
GS = 10 V
5 V
0 V
1
0.1
0.01
di/dt = 100 A/μs
V
GS = 0 V
Pulsed
10
0
0.5
1
1.5
1
10
IF - Diode Forward Current - A
100
VF(S-D) - Source to Drain Voltage - V
5
Data Sheet D18777EJ1V0DS
NP82N06PLG
PACKAGE DRAWING (Unit: mm)
TO-263 (MP-25ZP)
10.0 ±0.3
4.45 ±0.2
No plating
7.88 MIN.
4
1.3 ±0.2
0.025
to 0.25
0.5
0.75 ±0.2
2.54
0.25
1
2
3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
6
Data Sheet D18777EJ1V0DS
NP82N06PLG
TAPE INFORMATION
There are two types (-E1, -E2) of taping depending on the direction of the device.
Draw-out side
Reel side
MARKING INFORMATION
NEC
Pb-free plating marking
Abbreviation of part number
82N06
LG
Lot code
RECOMMENDED SOLDERING CONDITIONS
The NP82N06PLG should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Recommended
Soldering Method
Infrared reflow
Soldering Conditions
Condition Symbol
IR60-00-3
Maximum temperature (Package's surface temperature): 260°C or below
Time at maximum temperature: 10 seconds or less
Time of temperature higher than 220°C: 60 seconds or less
Preheating time at 160 to 180°C: 60 to 120 seconds
Maximum number of reflow processes: 3 times
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
Maximum temperature (Pin temperature): 350°C or below
Time (per side of the device): 3 seconds or less
Partial heating
P350
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Caution Do not use different soldering methods together (except for partial heating).
7
Data Sheet D18777EJ1V0DS
NP82N06PLG
•
The information in this document is current as of June, 2007. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
•
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
•
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-
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support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
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(Note)
(1)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2)
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
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