PS2703-1-M [NEC]

Transistor Output Optocoupler, 1-Element, 3750V Isolation, PLASTIC, SOP-4;


型号：	PS2703-1-M
厂家：	NEC
描述：	Transistor Output Optocoupler, 1-Element, 3750V Isolation, PLASTIC, SOP-4 光电分离技术隔离技术
文件：	总12页 (文件大小：117K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

PHOTOCOUPLER

PS2703-1,PS2703-2,PS2703-4

HIGH ISOLATION VOLTAGE

HIGH COLLECTOR TO EMITTER VOLTAGE TYPE

−NEPOC^TMSeries−

SOP MULTI PHOTOCOUPLER

DESCRIPTION

The PS2703-1, PS2703-2, PS2703-4 are optically coupled isolators containing a GaAs light emitting diode and an

NPN silicon phototransistor.

Each is mounted in a plastic SOP (Small Outline Package) for high density applications.

This package has shield effect to cut off ambient light.

FEATURES

•

High isolation voltage (BV = 3 750 Vr.m.s.)

High collector to emitter voltage (V^CEO= 120 V)

SOP (Small Outline Package) type

Each isolated channel per package

High-speed switching (t^r, t^f= 10 µs TYP.)

Taping product number (Only-1 type): PS2703-1-E3, E4, F3, F4

UL approved: File No. E72422 (S)

VDE0884 approved (Option)

APPLICATIONS

•

Hibrid IC

Telephone/FAX

FA/OA equipment

Programmable logic controllers

Power supply

ORDERING INFORMATION

Part Number

PS2703-1

Package

4-pin SOP

8-pin SOP

16-pin SOP

4-pin SOP

8-pin SOP

16-pin SOP

Safety Standard Approval

Standard specification products

• UL approved

PS2703-2

PS2703-4

PS2703-1-V

PS2703-2-V

PS2703-4-V

VDE0884 specification products (Option)

The information in this document is subject to change without notice.

Document No. P11308EJ6V0DS00 (6th edition)

Date Published December 1998 NS CP(K)

Printed in Japan

The mark • shows major revised points.

1988

PS2703-1,PS2703-2,PS2703-4

PACKAGE DIMENSIONS (in millimeters)

PS2703-1

4.5 MAX.

TOP VIEW

1. Anode

2. Cathode

3. Emitter

4. Collector

7.0±0.3

4.4

1.3

2.54

1.2 MAX.

0.25 M

0.5±0.3

+0.10

0.4

–0.05

PS2703-2

9.3 MAX.

TOP VIEW

1. 3. Anode

2. 4. Cathode

5. 7. Emitter

6. 8. Collector

7.0±0.3

4.4

1.3

0.5±0.3

2.54

1.2 MAX.

+0.10

0.4

0.25 M

–0.05

PS2703-4

TOP VIEW

19.46 MAX.

16 15 14 13 12 11 10

1. 3. 5. 7. Anode

2. 4. 6. 8. Cathode

9. 11. 13. 15. Emitter

10. 12. 14. 16. Collector

7.0±0.3

1.3

4.4

0.5±0.3

2.54

+0.10

1.2 MAX.

0.4

0.25 M

–0.05

Data Sheet P11308EJ6V0DS00

PS2703-1,PS2703-2,PS2703-4

ABSOLUTE MAXIMUM RATINGS (T^A= 25 °C, unless otherwise specified)

Ratings

Parameter

Symbol

PS2703-1

PS2703-2,

Unit

PS2703-4

Diode

Forward Current (DC)

Reverse Voltage

I^F

V^R

Power Dissipation Derating

Power Dissipation

∆P^D/°C

P^D

0.8

mW/°C

mW/ch

Peak Forward Current^*1

I^FP

Transistor Collector to Emitter Voltage

Emitter to Collector Voltage

Collector Current

V^CEO

V^ECO

I^C

120

mA/ch

mW/°C

mW/ch

Vr.m.s.

°C

Power Dissipation Derating

∆P^C/°C

P^C

1.5

1.2

Power Dissipation

150

120

Isolation Voltage^*2

3 750

Operating Ambient Temperature

Storage Temperature

T^A

–55 to +100

–55 to +150

T^stg

°C

*1 PW = 100 µs, Duty Cycle = 1 %

*2 AC voltage for 1 minute at T^A= 25 °C, RH = 60 % between input and output

Data Sheet P11308EJ6V0DS00

PS2703-1,PS2703-2,PS2703-4

ELECTRICAL CHARACTERISTICS (T^A= 25 °C)

Parameter

Symbol

V^F

Conditions

MIN.

TYP.

1.1

MAX.

1.4

Unit

Diode

Forward Voltage

Reverse Current

Terminal Capacitance

I^F= 5 mA

V^R= 5 V

I^R

µA

C^t

V = 0 V, f = 1 MHz

Collector to Emitter

Current

Transistor

Coupled

I^CEO

I^F= 0 mA, V^CE= 120 V

100

400

Current Transfer Ratio

(I^C/I^F)^*1

CTR

I^F= 5 mA, V^CE= 5 V

I^F= 1 mA, V^CE= 5 V

I^F= 10 mA, I^C= 2 mA

150

Collector Saturation

Voltage

V^{CE (sat)}

0.3

Isolation Resistance

R^I-O

C^I-O

t^r

V^I-O= 1 kV^DC

10¹¹

Ω

Isolation Capacitance

Rise Time ^*2

V = 0 V, f = 1 MHz

0.4

µs

V^CC= 5 V, I^C= 2 mA, R^L= 1 kΩ

Fall Time ^*2

t^f

*1 CTR rank (only PS2703-1)

CTR rank

CTR (%)

200 to 400

80 to

Conditions

I^F= 5 mA, V^CE= 5 V

I^F= 1 mA, V^CE= 5 V

I^F= 5 mA, V^CE= 5 V

I^F= 1 mA, V^CE= 5 V

I^F= 5 mA, V^CE= 5 V

I^F= 1 mA, V^CE= 5 V

100 to 300

25 to

50 to 150

10 to

*2 Test circuit for switching time

Pulse Input

PW = 100 µs

Duty Cycle = 1/10

In monitor

OUT

50 Ω

RL = 1 kΩ

Data Sheet P11308EJ6V0DS00

PS2703-1,PS2703-2,PS2703-4

TYPICAL CHARACTERISTICS (T^A= 25 °C, unless otherwise specified)

DIODE POWER DISSIPATION vs.

AMBIENT TEMPERATURE

TRANSISTOR POWER DISSIPATION vs.

AMBIENT TEMPERATURE

100

200

150

100

PS2703-1

1.5 mW/˚C

PS2703-2,

PS2703-4

1.2 mW/˚C

100

(˚C)

100

Ambient Temperature T

(˚C)

Ambient Temperature T

FORWARD CURRENT vs.

FORWARD VOLTAGE

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

100

5 mA

4 mA

= +100 ˚C

+75 ˚C

= 10 mA

I^F

+50 ˚C

3 mA

2 mA

+25 ˚C

0 ˚C

–25 ˚C

–55 ˚C

0.1

1 mA

0.5 mA

0.01

0.6

0.8

1.0

1.2

1.4

1.6

Forward Voltage V

(V)

Collector to Emitter Voltage V^CE(V)

COLLECTOR TO EMITTER DARK

CURRENT vs. AMBIENT TEMPERATURE

COLLECTOR CURRENT vs.

COLLECTOR SATURATION VOLTAGE

50 000

IF = 25 mA

10 mA

5 mA

10 000

5 000

2.5 mA

1 000

500

CE = 40 V

1.5 mA

1 mA

24 V

10 V

100

0.5

0.5 mA

0.5

0.1

–60 –40 –20

60 80 100

(˚C)

0.0

0.2

0.4

0.6

0.8

1.0

Ambient Temperature T

Collector Saturation Voltage V^{CE (sat)}(V)

Data Sheet P11308EJ6V0DS00

PS2703-1,PS2703-2,PS2703-4

NORMALIZED CURRENT TRANSFER

RATIO vs. AMBIENT TEMPERATURE

CURRENT TRANSFER RATIO vs.

FORWARD CURRENT

1.2

1.0

0.8

0.6

300

250

200

150

100

CE = 5 V

0.4

0.2

0.0

Normalized to 1.0

at T

= 5 mA, VCE = 5 V

50 75

= 25 ˚C,

–55

–25

100

10 k

100

0.1

0.5

500

10⁶

Ambient Temperature T (˚C)

Forward Current I

(mA)

SWITCHING TIME vs.

LOAD RESISTANCE

FREQUENCY RESPONSE

100

1.2

1.0

0.8

0.6

0.4

0.2

0.0

CC = 5V,

= 2 mA

= 1 kΩ

510 Ω

300 Ω

100 Ω

0.1

100

1 k

(Ω)

0.5

50 100

Load Resistance R

Frequency f (kHz)

SWITCHING TIME vs.

LOAD RESISTANCE

LONG TIME CTR DEGRADATION

1 000

1.2

1.0

= 5 mA, VCC = 5 V,

CTR = 90 %

100

0.8

0.6

= 1 mA,

= 5 mA,

= 20 mA, T

= 25 ˚C

= 60 ˚C

0.4

0.2

0.0

10²

10³

10⁴

10⁵

0.1

Load Resistance R (kΩ)

Time (Hr)

Remark The graphs indicate nominal characteristics.

Data Sheet P11308EJ6V0DS00

PS2703-1,PS2703-2,PS2703-4

TAPING SPECIFICATIONS (in millimeters)

Outline and Dimensions (Tape)

2.0±0.1

4.0±0.1

2.4±0.1

1.55±0.1

0.3

1.55±0.1

4.6±0.1

8.0±0.1

Taping Direction

PS2703-1-E4

PS2703-1-F4

PS2703-1-E3

PS2703-1-F3

Outline and Dimensions (Reel)

1.5±0.1

2.0±0.5

1.5±0.5

6.0±1

+2.0

12.4

–0.0

18.4 MAX.

Packing: PS2703-1-E3, E4 900 pcs/reel

PS2703-1-F3, F4 3 500 pcs/reel

Data Sheet P11308EJ6V0DS00

PS2703-1,PS2703-2,PS2703-4

RECOMMENDED SOLDERING CONDITIONS

(1) Infrared reflow soldering

• Peak reflow temperature

• Time of temperature higher than 210 °C

• Number of reflows

235 °C (package surface temperature)

30 seconds or less

Three

• Flux

Rosin flux containing small amount of chlorine (The flux with a

maximum chlorine content of 0.2 Wt % is recommended.)

Recommended Temperature Profile of Infrared Reflow

(heating)

to 10 s

235 ˚C (peak temperature)

210 ˚C

to 30 s

120 to 160 ˚C

60 to 90 s

(preheating)

Time (s)

Peak temperature 235 ˚C or below

(2) Dip soldering

• Temperature

• Time

260 °C or below (molten solder temperature)

10 seconds or less

• Number of times

• Flux

One

Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of

0.2 Wt % is recommended.)

Data Sheet P11308EJ6V0DS00

PS2703-1,PS2703-2,PS2703-4

SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)

Parameter

Application classification (DIN VDE 0109)

Symbol

Speck

Unit

for rated line voltages ≤ 300 Vr.m.s.

III

for rated line voltages ≤ 600 Vr.m.s.

Climatic test class (DIN IEC 68 Teil 1/09.80)

Dielectric strength maximum operating isolation voltage.

Test voltage (partial discharge test procedure a for type test and random test)

U^pr= 1.2 × U^IORM, P^d< 5 pC

55/100/21

U^IORM

U^pr

710

850

V^peak

Test voltage (partial discharge test procedure b for random test)

U^pr= 1.6 × U^IORM, P^d< 5 pC

U^pr

1 140

Highest permissible overvoltage

Degree of pollution (DIN VDE 0109)

Clearance distance

U^TR

6 000

V^peak

> 5

Creepage distance

> 5

Comparative tracking index (DIN IEC 112/VDE 0303 part 1)

Material group (DIN VDE 0109)

Storage temperature range

CTI

175

III a

T^stg

T^A

–55 to +150

–55 to +100

°C

Operating temperature range

Isolation resistance, minimum value

V^IO= 500 V dc at T^A= 25 °C

Ris MIN.

10¹²

10¹¹

Ω

V^IO= 500 V dc at T^AMAX. at least 100 °C

Safety maximum ratings

(maximum permissible in case of fault, see thermal derating curve)

Package temperature

Tsi

Isi

150

200

300

°C

Current (input current I^F, Psi = 0)

Power (output or total power dissipation)

Isolation resistance

Psi

V^IO= 500 V dc at T^A= 175 °C (Tsi)

Ris MIN.

10⁹

Ω

Data Sheet P11308EJ6V0DS00

PS2703-1,PS2703-2,PS2703-4

[MEMO]

Data Sheet P11308EJ6V0DS00

PS2703-1,PS2703-2,PS2703-4

[MEMO]

Data Sheet P11308EJ6V0DS00

PS2703-1,PS2703-2,PS2703-4

CAUTION

Within this device there exists GaAs (Gallium Arsenide) material which is a

harmful substance if ingested. Please do not under any circumstances break the

hermetic seal.

NEPOC is a trademark of NEC Corporation.

No part of this document may be copied or reproduced in any form or by any means without the prior written

consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this

document.

NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual

property rights of third parties by or arising from use of a device described herein or any other liability arising

from use of such device. No license, either express, implied or otherwise, is granted under any patents,

copyrights or other intellectual property rights of NEC Corporation or others.

While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,

the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or

property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety

measures in its design, such as redundancy, fire-containment, and anti-failure features.

NEC devices are classified into the following three quality grades:

"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on

a customer designated "quality assurance program" for a specific application. The recommended applications

of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each

device before using it in a particular application.

Standard: Computers, office equipment, communications equipment, test and measurement equipment,

audio and visual equipment, home electronic appliances, machine tools, personal electronic

equipment and industrial robots

Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed

for life support)

Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems or medical equipment for life support, etc.

The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.

If customers intend to use NEC devices for applications other than those specified for Standard quality grade,

they should contact an NEC sales representative in advance.

Anti-radioactive design is not implemented in this product.

M4 96. 5

PS2703-1-M [NEC]

相关型号：

SI9130DB

SI9135LG-T1

SI9135LG-T1-E3

SI9135_11

SI9136_11

SI9130CG-T1-E3

SI9130LG-T1-E3

SI9130_11

SI9137

SI9137DB

SI9137LG

SI9122E