PS2706-2-V-A [NEC]

AC Input-Darlington Output Optocoupler, 2-Element, 3750V Isolation, PLASTIC, SOP-8;
PS2706-2-V-A
型号: PS2706-2-V-A
厂家: NEC    NEC
描述:

AC Input-Darlington Output Optocoupler, 2-Element, 3750V Isolation, PLASTIC, SOP-8

文件: 总12页 (文件大小:96K)
中文:  中文翻译
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DATA SHEET  
PHOTOCOUPLER  
PS2706-1,PS2706-2,PS2706-4  
AC INPUT RESPONSE  
DARLINGTON TRANSISTOR  
SOP MULTI PHOTOCOUPLER SERIES  
NEPOCTM Series−  
DESCRIPTION  
The PS2706-1, PS2706-2, PS2706-4, are optically coupled isolators containing GaAs light emitting diodes and an  
NPN silicon darlington-connected phototransistor.  
Each is mounted in a plastic SOP (Small Out-line Package) for high density applications.  
This package has shield effect to cut off ambient light.  
FEATURES  
AC input response  
High current transfer ratio (CTR = 2 000 % TYP.)  
High isolation voltage (BV = 3 750 Vr.m.s.)  
Small and thin (SOP) package  
High-speed switching (tr, tf = 200 µs TYP.)  
Ordering number of taping product (1-ch only): PS2706-1-E3, E4, F3, F4  
UL approved: File No. E72422 (S)  
VDE0884 approved (Option)  
APPLICATIONS  
Hybrid IC  
Telephone, Exchange equipment  
FA/OA equipment  
Programmable logic controllers  
ORDERING INFORMATION  
Part Number  
PS2706-1  
Package  
4-pin SOP  
8-pin SOP  
16-pin SOP  
4-pin SOP  
8-pin SOP  
16-pin SOP  
Safety Standard Approval  
Standard specification products  
• UL approved  
PS2706-2  
PS2706-4  
PS2706-1-V  
PS2706-2-V  
PS2706-4-V  
VDE0884 specification products (Option)  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. P11310EJ5V0DS00 (5th edition)  
Date Published February 1999 NS CP(K)  
Printed in Japan  
The mark shows major revised points.  
1988, 1999  
©
PS2706-1,PS2706-2,PS2706-4  
PACKAGE DIMENSIONS (in millimeters)  
PS2706-1  
4.5 MAX.  
TOP VIEW  
4
1
3
1. Anode,Cathode  
2. Cathode,Anode  
3. Emitter  
4. Collector  
2
7.0±0.3  
4.4  
1.3  
2.54  
1.2 MAX.  
0.25 M  
0.5±0.3  
+0.10  
0.4  
–0.05  
PS2706-2  
9.3 MAX.  
TOP VIEW  
8
1
7
2
6
3
5
1. 3. Anode,Cathode  
2. 4. Cathode,Anode  
5. 7. Emitter  
6. 8. Collector  
4
7.0±0.3  
4.4  
1.3  
0.5±0.3  
2.54  
1.2 MAX.  
+0.10  
0.4  
0.25 M  
–0.05  
PS2706-4  
TOP VIEW  
19.46 MAX.  
16 15 14 13 12 11 10  
9
8
1
2
3
4
5
6
7
1. 3. 5. 7. Anode,Cathode  
2. 4. 6. 8. Cathode,Anode  
9. 11. 13. 15. Emitter  
10. 12. 14. 16. Collector  
7.0±0.3  
1.3  
4.4  
0.5±0.3  
2.54  
+0.10  
1.2 MAX.  
0.4  
0.25 M  
–0.05  
2
Data Sheet P11310EJ5V0DS00  
PS2706-1,PS2706-2,PS2706-4  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified)  
Ratings  
Parameter  
Symbol  
Unit  
PS2706-2,  
PS2706-4  
PS2706-1  
Diode  
Forward Current (DC)  
Power Dissipation Derating  
Power Dissipation  
IF  
PD/°C  
PD  
±50  
0.8  
80  
±1  
40  
6
mA  
mW/°C  
mW/ch  
A
Peak Forward Current*1  
IFP  
Transistor Collector to Emitter Voltage  
Emitter to Collector Voltage  
Collector Current  
VCEO  
VECO  
IC  
V
V
200  
1.5  
160  
1.2  
mA/ch  
mW/°C  
mW/ch  
Vr.m.s.  
°C  
Power Dissipation Derating  
PC/°C  
PC  
Power Dissipation  
150  
120  
Isolation Voltage*2  
BV  
3 750  
Operating Ambient Temperature  
Storage Temperature  
TA  
–55 to +100  
–55 to +150  
Tstg  
°C  
*1 PW = 100 µs, Duty Cycle = 1 %  
*2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output  
3
Data Sheet P11310EJ5V0DS00  
PS2706-1,PS2706-2,PS2706-4  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
Parameter  
Symbol  
VF  
Conditions  
MIN.  
TYP.  
1.1  
MAX.  
1.4  
Unit  
V
Diode  
Forward Voltage  
Terminal Capacitance  
IF = ±5 mA  
Ct  
V = 0 V, f = 1 MHz  
60  
pF  
nA  
Collector to Emitter  
Current  
Transistor  
Coupled  
ICEO  
IF = 0 mA, VCE = 40 V  
400  
Current Transfer Ratio  
(IC/IF)  
CTR  
IF = ±1 mA, VCE = 2 V  
IF = ±1 mA, VCE = 2 V  
IF = ±1 mA, IC = 2 mA  
200  
0.3  
2 000  
1.0  
%
CTR Ratio*1  
3.0  
1.0  
CTR1/  
CTR2  
Collector Saturation  
Voltage  
VCE (sat)  
V
Isolation Resistance  
Isolation Capacitance  
Rise Time *2  
RI-O  
CI-O  
tr  
VI-O = 1 kVDC  
1011  
V = 0 V, f = 1 MHz  
0.4  
200  
200  
pF  
µs  
VCC = 5 V, IC = 2 mA, RL = 100 Ω  
Fall Time *2  
tf  
*1 CTR1 = IC1/IF1, CTR2 = IC2/IF2  
IC1  
IF1  
VCE  
IC2  
IF2  
*2 Test circuit for switching time  
Pulse input  
VCC  
IF  
PW = 1 ms,  
Duty cycle = 1/10  
Input monitor  
VOUT  
50 Ω  
RL  
= 100 Ω  
4
Data Sheet P11310EJ5V0DS00  
PS2706-1,PS2706-2,PS2706-4  
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified)  
DIODE POWER DISSIPATION vs.  
AMBIENT TEMPERATURE  
TRANSISTOR POWER DISSIPATION vs.  
AMBIENT TEMPERATURE  
100  
75  
200  
150  
100  
50  
PS2706-1  
1.5 mW/˚C  
50  
PS2706-2,  
PS2706-4  
1.2 mW/˚C  
25  
0
25  
50  
75  
100  
0
25  
50  
75  
(˚C)  
100  
Ambient Temperature T  
A
(˚C)  
Ambient Temperature T  
A
FORWARD CURRENT vs.  
FORWARD VOLTAGE  
FORWARD CURRENT vs.  
FORWARD VOLTAGE  
100  
10  
80  
60  
T
A
= +100 ˚C  
+75 ˚C  
40  
+50 ˚C  
20  
1
0
+25 ˚C  
0 ˚C  
–25 ˚C  
–55 ˚C  
–20  
–40  
–60  
–80  
0.1  
0.01  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
–1.6 –1.2 –0.8 –0.4  
0
0.4 0.8 1.2 1.6  
Forward Voltage V  
F
(V)  
Forward Voltage V (V)  
F
COLLECTOR CURRENT vs.  
COLLECTOR SATURATION VOLTAGE  
COLLECTOR TO EMITTER DARK  
CURRENT vs. AMBIENT TEMPERATURE  
300  
50 000  
IF = 10 mA  
5 mA  
1 mA  
100  
10 000  
5 000  
V
CE = 40 V  
24 V  
10 V  
5 V  
30  
10  
0.5 mA  
1 000  
500  
2 V  
0.2 mA  
0.1 mA  
100  
50  
3
1
10  
5
0.3  
0.1  
1
–60 –40 –20  
0
20  
40  
60 80 100  
(˚C)  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
Collector Saturation Voltage VCE (sat) (V)  
Ambient Temperature T  
A
5
Data Sheet P11310EJ5V0DS00  
PS2706-1,PS2706-2,PS2706-4  
COLLECTOR CURRENT vs.  
COLLECTOR TO EMITTER VOLTAGE  
NORMALIZED CURRENT TRANSFER  
RATIO vs. AMBIENT TEMPERATURE  
180  
160  
140  
120  
100  
80  
1.2  
1.0  
0.8  
0.6  
IF = 5 mA  
2 mA  
60  
0.4  
0.2  
0.0  
1 mA  
40  
Normalized to 1.0  
at TA = 25 ˚C,  
IF = 1 mA, VCE = 2 V  
0.5 mA  
20  
–50  
–25  
0
0
2
4
6
8
10  
25  
50  
75  
100  
Collector to Emitter Voltage VCE (V)  
Ambient Temperature TA (˚C)  
CURRENT TRANSFER RATIO vs.  
FORWARD CURRENT  
SWITCHING TIME vs.  
LOAD RESISTANCE  
1 000  
500  
3 000  
2 500  
2 000  
1 500  
1 000  
VCC = 5 V, IC = 2 mA,  
CTR = 2 200 %  
VCE = 2 V  
tf  
tr  
µ
100  
td  
ts  
50  
10  
5
500  
0
1
10  
50  
100  
300  
5 k  
50  
100  
500  
1 k  
µ
Forward Current IF ( A)  
Load Resistance RL ()  
CURRENT TRANSFER RATIO vs.  
FORWARD CURRENT  
SWITCHING TIME vs.  
LOAD RESISTANCE  
5 000  
1 000  
10 000  
9 000  
8 000  
7 000  
6 000  
5 000  
4 000  
3 000  
2 000  
1 000  
0
tf  
IF = 1 mA, VCC = 5 V,  
CTR = 2 200 %  
VCE = 2 V  
500  
µ
ts  
100  
50  
tr  
10  
5
td  
1
0.5  
1
5
10  
50 100  
500 1 k  
5 k 10 k  
50 k  
Forward Current IF (mA)  
Load Resistance RL ()  
6
Data Sheet P11310EJ5V0DS00  
PS2706-1,PS2706-2,PS2706-4  
FREQUENCY RESPONSE  
LONG TERM CTR DEGRADATION  
1.2  
5
0
I
V
F
= 1 mA,  
CE = 2 V  
1.0  
0.8  
0.6  
I
I
F
F
= 1 mA, T  
= 1 mA, T  
A
A
= 60 ˚C  
= 25 ˚C  
–5  
R = 100 Ω  
L
–10  
–15  
–20  
0.4  
0.2  
0.0  
0.1  
0.5  
1
5
10  
50 100  
1
102  
103  
104  
105  
106  
Frequency f (kHz)  
Time (Hr)  
Remark The graphs indicate nominal characteristics.  
7
Data Sheet P11310EJ5V0DS00  
PS2706-1,PS2706-2,PS2706-4  
TAPING SPECIFICATIONS (in millimeters)  
Outline and Dimensions (Tape)  
2.0±0.1  
4.0±0.1  
2.4±0.1  
1.55±0.1  
0.3  
1.55±0.1  
4.6±0.1  
8.0±0.1  
Tape Direction  
PS2706-1-E4  
PS2706-1-F4  
PS2706-1-E3  
PS2706-1-F3  
Outline and Dimensions (Reel)  
1.5±0.1  
1.5±0.1  
φ
φ
φ
2.0±0.5  
1.5±0.5  
φ
φ
6.0±1  
˚
+2.0  
12.4  
–0.0  
18.4 MAX.  
Packing: PS2706-1-E3, E4 900 pcs/reel  
PS2706-1-F3, F4 3 500 pcs/reel  
8
Data Sheet P11310EJ5V0DS00  
PS2706-1,PS2706-2,PS2706-4  
RECOMMENDED SOLDERING CONDITIONS  
(1) Infrared reflow soldering  
• Peak reflow temperature  
• Time of temperature higher than 210 °C  
• Number of reflows  
235 °C (package surface temperature)  
30 seconds or less  
Three  
• Flux  
Rosin flux containing small amount of chlorine (The flux with a  
maximum chlorine content of 0.2 Wt % is recommended.)  
Recommended Temperature Profile of Infrared Reflow  
(heating)  
to 10 s  
235 ˚C (peak temperature)  
210 ˚C  
to 30 s  
120 to 160 ˚C  
60 to 90 s  
(preheating)  
Time (s)  
Peak temperature 235 ˚C or below  
(2) Dip soldering  
• Temperature  
• Time  
260 °C or below (molten solder temperature)  
10 seconds or less  
• Number of times  
• Flux  
One  
Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of  
0.2 Wt % is recommended.)  
(3) Cautions  
• Fluxes  
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.  
9
Data Sheet P11310EJ5V0DS00  
PS2706-1,PS2706-2,PS2706-4  
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)  
Parameter  
Application classification (DIN VDE 0109)  
Symbol  
Speck  
Unit  
for rated line voltages 300 Vr.m.s.  
for rated line voltages 600 Vr.m.s.  
IV  
III  
Climatic test class (DIN IEC 68 Teil 1/09.80)  
55/100/21  
Dielectric strength  
maximum operating isolation voltage  
Test voltage (partial discharge test, procedure a for type test and random test)  
Upr = 1.2 × UIORM, Pd < 5 pC  
UIORM  
Upr  
710  
850  
Vpeak  
Vpeak  
Test voltage (partial discharge test, procedure b for random test)  
Upr  
1 140  
Vpeak  
Upr = 1.6 × UIORM, Pd < 5 pC  
Highest permissible overvoltage  
Degree of pollution (DIN VDE 0109)  
Clearance distance  
UTR  
6 000  
Vpeak  
2
> 5  
mm  
mm  
Creepage distance  
> 5  
Comparative tracking index (DIN IEC 112/VDE 0303 part 1)  
Material group (DIN VDE 0109)  
Storage temperature range  
CTI  
175  
III a  
Tstg  
TA  
55 to +150  
–55 to +100  
°C  
Operating temperature range  
°C  
Isolation resistance, minimum value  
VIO = 500 V dc at TA = 25 °C  
Ris MIN.  
Ris MIN.  
1012  
1011  
VIO = 500 V dc at TA MAX. at least 100 °C  
Safety maximum ratings (maximum permissible in case of fault, see thermal  
derating curve)  
Package temperature  
Tsi  
Isi  
150  
200  
300  
°C  
mA  
mW  
Current (input current IF, Psi = 0)  
Power (output or total power dissipation)  
Isolation resistance  
Psi  
VIO = 500 V dc at TA = 175 °C (Tsi)  
Ris MIN.  
109  
10  
Data Sheet P11310EJ5V0DS00  
PS2706-1,PS2706-2,PS2706-4  
[MEMO]  
11  
Data Sheet P11310EJ5V0DS00  
PS2706-1,PS2706-2,PS2706-4  
CAUTION  
Within this device there exists GaAs (Gallium Arsenide) material which is a  
harmful substance if ingested. Please do not under any circumstances break the  
hermetic seal.  
NEPOC is a trademark of NEC Corporation.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in  
this document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property  
rights of third parties by or arising from use of a device described herein or any other liability arising from use  
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other  
intellectual property rights of NEC Corporation or others.  
Descriptions of circuits, software, and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these circuits,  
software, and information in the design of the customer's equipment shall be done under the full responsibility  
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third  
parties arising from the use of these circuits, software, and information.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a  
customer designated "quality assurance program" for a specific application. The recommended applications of  
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device  
before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact an NEC sales representative in advance.  
M7 98. 8  

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