PS7122L-2A-A [NEC]
Transistor Output SSR, 2-Channel, 1500V Isolation, SURFACE MOUNT PACKAGE-8;型号: | PS7122L-2A-A |
厂家: | NEC |
描述: | Transistor Output SSR, 2-Channel, 1500V Isolation, SURFACE MOUNT PACKAGE-8 光电 继电器 固态继电器 输出元件 |
文件: | 总12页 (文件大小:82K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
Solid State Relay
OCMOS FET
PS7122-1A,-2A,PS7122L-1A,-2A
6, 8-PIN DIP, 200 V BREAK DOWN VOLTAGE
1-ch, 2-ch Optical Coupled MOS FET
DESCRIPTION
The PS7122-1A, -2A and PS7122L-1A, -2A are solid state relays containing GaAs LEDs on the light emitting side
(input side) and MOS FETs on the output side.
They are suitable for analog signal control because of their low offset and high linearity.
The PS7122L-1A, -2A have a surface mount type lead.
FEATURES
•
•
•
•
•
•
•
•
•
1 channel type (1 a output) or 2 channel type (1 a + 1 a output)
Low LED operating current (IF = 2 mA)
Designed for AC/DC switching line changer
Small package (6, 8-pin DIP)
Low offset voltage
PS7122L-1A, -2A: Surface mount type
UL approved: File No. E72422 (S)
BSI approved: No. 8245/8246
CSA approved: No. CA 101391
APPLICATIONS
•
•
•
Exchange equipment
Measurement equipment
FA/OA equipment
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P11555EJ6V1DS00 (6th edition)
Date Published November 1999 NS CP(K)
Printed in Japan
The mark • shows major revised points.
1996, 1999
©
PS7122-1A,-2A,PS7122L-1A,-2A
PACKAGE DIMENSIONS (in millimeters)
PS7122-1A
PS7122L-1A
TOP VIEW
TOP VIEW
6
5
4
6
5
4
9.25±0.5
9.25±0.5
1
2
3
1
2
3
1. LED Anode
2. LED Cathode
3. NC
1. LED Anode
2. LED Cathode
3. NC
4. MOS FET Drain
5. MOS FET Source
6. MOS FET Drain
4. MOS FET Drain
5. MOS FET Source
6. MOS FET Drain
7.62
6.5±0.5
6.5±0.5
0.9±0.25
9.60±0.4
2.54
1.34±0.1
0.25 M
0 to 15˚
0.5±0.1
1.34±0.1
2.54
0.25 M
PS7122-2A
PS7122L-2A
TOP VIEW
TOP VIEW
9.25±0.5
9.25±0.5
6
5
4
6
5
4
8
7
8
7
1
2
3
1
2
3
1. LED Anode
2. LED Cathode 6. MOS FET
3. LED Anode
7. MOS FET
5. MOS FET
1. LED Anode
2. LED Cathode 6. MOS FET
3. LED Anode
7. MOS FET
4. LED Cathode 8. MOS FET
5. MOS FET
4. LED Cathode 8. MOS FET
7.62
6.5±0.5
6.5±0.5
0.9±0.25
9.60±0.4
2.54
1.34±0.1
0.25 M
0 to 15˚
0.5±0.1
1.34±0.1
0.25 M
2.54
2
Data Sheet P11555EJ6V1DS00
PS7122-1A,-2A,PS7122L-1A,-2A
ORDERING INFORMATION
Part Number
PS7122-1A
Package
6-pin DIP
Packing Style
Magazine case 50 pcs
Application Part Number*1
PS7122-1A
PS7122L-1A
PS7122L-1A
PS7122L-1A-E3
PS7122L-1A-E4
PS7122-2A
Embossed Tape 1 000 pcs/reel
Magazine case 50 pcs
8-pin DIP
PS7122-2A
PS7122L-2A
PS7122L-2A
PS7122L-2A-E3
PS7122L-2A-E4
Embossed Tape 1 000 pcs/reel
*1 For the application of the Safety Standard, following part number should be used.
3
Data Sheet P11555EJ6V1DS00
PS7122-1A,-2A,PS7122L-1A,-2A
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified)
Ratings
Symbol PS7122-1A,
PS7122-2A,
Parameter
Unit
PS7122L-1A PS7122L-2A
Diode
Forward Current (DC)
Reverse Voltage
IF
VR
PD
IFP
VL
IL
50
5.0
50
mA
V
Power Dissipation
mW/ch
A
Peak Forward Current*1
1
MOS FET Break Down Voltage
Continuous
200
200
V
Connection A
Connection B
Connection C
mA
Load Current*2
350
500
−
−
Pulse Load Current*3
(AC/DC Connection)
ILP
400
mA
Power Dissipation
Isolation Voltage*4
PD
BV
PT
560
610
375
850
mW/ch
Vr.m.s.
mW
1 500
Total Power Dissipation
Operating Ambient Temperature
Storage Temperature
TA
−40 to +80
°C
Tstg
−40 to +100
°C
*1 PW = 100 µs, Duty Cycle = 1 %
*2 Conditions: IF ≥ 2 mA. The following types of load connections are available.
6
1
Connection A
Connection B
Connection C
2
3
5
V
L
L
(AC/DC)
(DC)
I
L
L
L
L
4
6
5
+
–
1
2
3
V
I
4
6
1
2
3
–
+
5
4
V
L
L
(DC)
(DC)
I
L
L
L
6
5
I
+
–
L
1
2
3
V
I
L
+ I
L
I
L
4
*3 PW = 100 ms, 1 shot
*4 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output
4
Data Sheet P11555EJ6V1DS00
PS7122-1A,-2A,PS7122L-1A,-2A
RECOMMENDED OPERATING CONDITIONS (TA = 25 °C)
Parameter
LED Operating Current
LED Off Voltage
Symbol
MIN.
TYP.
10
MAX.
Unit
mA
V
IF
2
0
20
VF
0.5
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Parameter
Symbol
VF
Conditions
MIN.
TYP.
1.2
MAX.
1.4
Unit
V
Diode
Forward Voltage
Reverse Current
IF = 10 mA
VR = 5 V
IR
5.0
µA
MOS FET Off-state Leakage Current
Output Capacitance
ILoff
VD = 200 V
0.03
165
1.0
µA
Cout
IFon
VD = 0 V, f = 1 MHz
IL = 200 mA
pF/ch
mA
Ω
Coupled
LED On-state Current
On-state Resistance
2.0
5.0
Ron1
Ron2
ton
IF = 10 mA, IL = 10 mA
3.0
IF = 10 mA, IL = 200 mA, t ≤ 10 ms
IF = 10 mA, VO = 5 V, PW ≥ 10 ms
Turn-on Time*1
0.6
2.0
0.2
ms
Turn-off Time*1
toff
0.06
Isolation Resistance
Isolation Capacitance
RI-O
CI-O
VI-O = 1.0 kVDC
109
Ω
V = 0 V, f = 1 MHz
1.1
pF/ch
*1 Test Circuit for Switching Time
I
F
50 %
Input
Pulse Input
V
V
L
0
V
O
= 5 V
90 %
10 %
Input monitor
O
monitor
Output
Rin
RL
t
on
t
off
5
Data Sheet P11555EJ6V1DS00
PS7122-1A,-2A,PS7122L-1A,-2A
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified)
MAXIMUM FORWARD CURRENT vs.
AMBIENT TEMPERATURE
MAXIMUM LOAD CURRENT vs.
AMBIENT TEMPERATURE
100
80
300
250
200
150
100
60
40
20
0
50
0
–25
0
25
50
7580
(˚C)
100
–25
0
25
50
7580
(˚C)
100
Ambient Temperature T
A
Ambient Temperature T
A
FORWARD VOLTAGE vs.
AMBIENT TEMPERATURE
OUTPUT CAPACITANCE vs.
APPLIED VOLTAGE
1.6
1.4
1.2
250
200
150
100
50
f = 1 MHz
I = 50 mA
F
30 mA
20 mA
10 mA
5 mA
1.0
0.8
1 mA
–25
0
25
50
75
(˚C)
100
0
20
40
60
80
(V)
100
120
Ambient Temperature T
A
Applied Voltage V
D
OFF-STATE LEAKAGE CURRENT vs.
APPLIED VOLTAGE
LOAD CURRENT vs. LOAD VOLTAGE
10–4
10–5
10–6
10–7
10–8
10–9
10–10
I
F
=10 mA
200
100
T
A
= 80 ˚C
25 ˚C
–1.0
–0.5
0
0.5
1.0
–100
–200
0
50
100
150
200
250
Applied Voltage V
D
(V)
Load Voltage V (V)
L
6
Data Sheet P11555EJ6V1DS00
PS7122-1A,-2A,PS7122L-1A,-2A
NORMALIZED ON-STATE RESISTANCE vs.
AMBIENT TEMPERATURE
ON-STATE RESISTANCE DISTRIBUTION
3.0
30
n = 50 pcs,
Normalized to 1.0
I
I
F
= 10 mA,
= 10 mA
at T = 25 ˚C,
A
2.5
25
20
15
10
5
L
I
I
F
= 10 mA,
= 10 mA
L
2.0
1.5
1.0
0.5
0.0
0
–25
0
25
50
75
100
2.8
2.9
3.0
3.1
3.2
Ambient Temperature T (˚C)
A
On-state Resistance Ron (Ω)
TURN-ON TIME vs. FORWARD CURRENT
TURN-OFF TIME vs. FORWARD CURRENT
25
0.5
V
O
= 5 V
VO = 5 V
0.4
0.3
0.2
0.1
20
15
10
5
0
5
10
15
20
(mA)
25
30
0
5
10
15
20
(mA)
25
30
Forward Current I
F
Forward Current I
F
TURN-ON TIME DISTRIBUTION
TURN-OFF TIME DISTRIBUTION
30
25
20
15
10
5
30
25
20
15
10
5
n = 50 pcs,
= 10 mA,
= 5 V
n = 50 pcs,
= 10 mA,
= 5 V
I
V
F
I
V
F
O
O
0
0
0.4
0.5
0.6
0.7
0.8
0.04
0.08
Turn-on Time ton (ms)
Turn-off Time toff (ms)
7
Data Sheet P11555EJ6V1DS00
PS7122-1A,-2A,PS7122L-1A,-2A
NORMALIZED TURN-ON TIME vs.
AMBIENT TEMPERATURE
NORMALIZED TURN-OFF TIME vs.
AMBIENT TEMPERATURE
3.0
2.5
2.0
1.5
1.0
3.0
Normalized to 1.0
Normalized to 1.0
at T
= 10 mA,
= 5 V
A
= 25 ˚C,
at T
= 10 mA,
= 5 V
A
= 25 ˚C,
2.5
2.0
1.5
1.0
I
F
I
F
VO
VO
0.5
0.0
0.5
0.0
–25
0
25
50
75
(˚C)
100
–25
0
25
50
75
(˚C)
100
Ambient Temperature T
A
Ambient Temperature T
A
Remark The graphs indicate nominal characteristics.
8
Data Sheet P11555EJ6V1DS00
PS7122-1A,-2A,PS7122L-1A,-2A
TAPING SPECIFICATIONS (in millimeters)
Outline and Dimensions (Tape)
2.0±0.1
4.0±0.1
1.55±0.1
4.3±0.2
0.3
10.4±0.1
1.55±0.1
12.0±0.1
Tape Direction
PS7122L-1A-E3
PS7122L-2A-E3
PS7122L-1A-E4
PS7122L-2A-E4
Outline and Dimensions (Reel)
1.5
2.0±0.5
φ13.0±0.5
φ
R 1.0
φ
φ21.0±0.8
+2.0
16.4
–0.0
Packing: 1 000 pcs/reel
9
Data Sheet P11555EJ6V1DS00
PS7122-1A,-2A,PS7122L-1A,-2A
RECOMMENDED SOLDERING CONDITIONS
(1) Infrared reflow soldering
• Peak reflow temperature
235 °C (package surface temperature)
• Time of temperature higher than 210 °C 30 seconds or less
• Number of reflows
• Flux
Two
Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt % is recommended.)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
235 ˚C (peak temperature)
210 ˚C
to 30 s
100 to 160 ˚C
60 to 120 s
(preheating)
Time (s)
(2) Dip soldering
• Temperature
• Time
260 °C or below (molten solder temperature)
10 seconds or less
One
• Number of times
• Flux
Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of
0.2 Wt % is recommended.)
(3) Cautions
• Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
10
Data Sheet P11555EJ6V1DS00
PS7122-1A,-2A,PS7122L-1A,-2A
[MEMO]
11
Data Sheet P11555EJ6V1DS00
PS7122-1A,-2A,PS7122L-1A,-2A
CAUTION
Within this device there exists GaAs (Gallium Arsenide) material which is a
harmful substance if ingested. Please do not under any circumstances break the
hermetic seal.
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8
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