RD33UJN3 [NEC]

Zener Diode, 33V V(Z), 2.77%, 0.15W, Silicon, Unidirectional;


型号：	RD33UJN3
厂家：	NEC
描述：	Zener Diode, 33V V(Z), 2.77%, 0.15W, Silicon, Unidirectional 测试光电二极管
文件：	总8页 (文件大小：39K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

ZENER DIODES

RD4.7UJ to RD39UJ

LOW NOISE SHARP BREAKDOWN CHARACTERISTICS

ZENER DIODES

2PIN ULTRA SUPER MINI MOLD

DESCRIPTION

PACKAGE DIMENSIONS

Type RD4.7UJ to RD39UJ Series are 2PIN Ultra Super Mini

Mold Package zener diodes possessing an allowable power

dissipation of 150 mW featuring low noise and sharp break-

down characteristic. They are intended for use in audio equip-

ment, instrument equipment.

(Unit: mm)

2.1±0.1

1.3±0.1

FEATURES

•

Low Noise

Sharp Breakdown characteristics

V^z; Applied E24 standard

APPLICATIONS

Cathode

Indication

Circuits for Constant Voltage, Constant Current, Waveform

clipper, Surge absorber, etc.

MAXIMUM RATINGS (TA = 25 °C)

Power Dissipation

150 mW

Forward Current

I^F

100 mA

Reverse Surge Power

PRSM

2.2 W

(at t = 10 µs/1 pulse)

Show Fig. 6

150 °C

Junction Temperature

Storage Temperature

T^stg

–55 to +150 °C

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability

and additional information.

Document No. D13938EJ3V0DS00 (3rd edition)

(Previous No. DC-2135)

Date Published March 1999 N CP(K)

Printed in Japan

1993

RD4.7UJ to RD39UJ

ELECTRICAL CHARACTERISTICS (TA = 25 ± 2 °C)

Dynamic

Impedance

Zz (Ω)^{Note 2}

Zener Voltage

Reverse Current

IR (µA)

Type Number

Class

Vz (V)^{Note 1}

MAX.

4.91

MIN.

4.39

4.52

4.66

4.81

4.95

5.10

5.26

5.44

5.63

5.81

6.01

6.21

6.41

6.60

6.80

7.00

7.21

7.46

7.69

7.94

8.20

8.47

8.76

9.06

9.35

9.66

10.00

10.32

10.64

10.97

11.28

11.59

11.93

12.29

12.72

13.17

Iz (mA)

0.5

MAX.

Iz (mA)

MAX.

VR (V)

4.62

RD4.7UJ

800

500

200

100

0.5

1.0

4.76

4.91

5.36

5.05

RD5.1UJ

RD5.6UJ

RD6.2UJ

RD6.8UJ

RD7.5UJ

RD8.2UJ

RD9.1UJ

RD10UJ

RD11UJ

RD12UJ

RD13UJ

0.5

1.5

2.5

3.0

3.5

4.0

5.0

6.0

7.0

8.0

9.0

10.0

5.20

5.36

5.91

5.54

5.73

5.91

6.53

6.11

6.32

6.53

7.14

6.74

0.5

0.1

6.94

7.14

7.83

7.35

7.60

7.83

8.61

8.08

8.34

8.61

9.51

8.91

9.21

9.51

10.51

9.82

10.16

10.51

11.50

10.84

11.17

11.50

12.52

11.83

12.17

12.52

13.86

12.95

13.40

13.86

Data Sheet D13938EJ3V0DS00

RD4.7UJ to RD39UJ

Dynamic

Impedance

Zz (Ω)^{Note 2}

Zener Voltage

Vz (V)^{Note 1}

Reverse Current

Type Number

RD15UJ

Class

IR (µA)

MIN.

13.63

14.12

14.62

15.13

15.58

16.07

16.63

17.24

17.87

18.51

19.14

19.80

20.46

21.09

21.76

22.42

23.19

23.98

24.75

25.56

26.46

27.38

28.35

29.37

30.30

31.21

32.14

33.08

33.95

34.87

35.78

36.63

37.56

MAX.

15.38

14.35

14.85

15.38

16.91

15.87

16.36

16.91

18.81

17.52

18.15

18.81

20.79

19.42

20.12

20.79

22.82

21.47

22.15

22.82

25.17

23.59

24.38

25.17

27.95

26.04

26.96

27.95

31.04

29.00

30.04

31.04

33.97

32.02

32.98

33.97

36.83

34.92

36.85

36.83

39.67

37.75

38.69

39.67

Iz (mA)

MAX.

Iz (mA)

MAX.

0.1

VR (V)

0.5

RD16UJ

RD18UJ

RD20UJ

RD22UJ

RD24UJ

RD27UJ

RD30UJ

RD33UJ

RD36UJ

RD39UJ

0.1

100

120

150

200

250

300

360

Note 1. Tested with pulse (40 ms)

2. Z^zis measured at Iz by given a very small A.C. current signal

Data Sheet D13938EJ3V0DS00

RD4.7UJ to RD39UJ

TYPICAL CHARACTERISTICS (TA = 25 °C)

Fig. 1 P – TA RATING

200

150

100

30×30×0.75

P.C.B. (Ceramic)

20×15×0.75

P.C.B. (Ceramic)

10×7.5×0.75

P.C.B. (Glass Epoxy)

10×7.5×0.75

P.C.B. (Ceramic)

100

- Ambient Temperature - °C

150

200

Fig. 2 I^z– Vz CHARACTERISTICS (a to d)

100 m

10 m

1 m

100 m

10 m

1 m

100

- Zener Voltage - V

(a)

- Zener Voltage - V

(b)

Data Sheet D13938EJ3V0DS00

RD4.7UJ to RD39UJ

100 m

10 m

1 m

100 m

10 m

1 m

100

28 30 32 34 36 38 40 42 44

- Zener Voltage - V

(c)

- Zener Voltage - V

(d)

Fig. 3 γ z – Vz CHARACTERISTICS

%/°C

0.08

0.06

0.04

0.02

mV/°C

–0.02

–0.04

–8

–16

12 16 20 24 28 32 36 40

V_{Z - Zener Voltage - V}

Data Sheet D13938EJ3V0DS00

RD4.7UJ to RD39UJ

Fig. 4 TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC

1000

100

833 °C/W

P.C.B. (Glass Epoxy)

(30mm×30 mm×1.6mm)

1 m

10 m

100 m

100

t – Time – s

Fig. 5 SURGE REVERSE POWER RATINGS

1000

100

= 25 °C

Repetitive

100

1 m

– Pulse Width – s

10 m

100 m

Data Sheet D13938EJ3V0DS00

RD4.7UJ to RD39UJ

[MEMO]

Data Sheet D13938EJ3V0DS00

RD4.7UJ to RD39UJ

[MEMO]

• The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

• No part of this document may be copied or reproduced in any form or by any means without the prior written

consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in

this document.

• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual

property rights of third parties by or arising from use of a device described herein or any other liability arising

from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights

or other intellectual property rights of NEC Corporation or others.

• Descriptions of circuits, software, and other related information in this document are provided for illustrative

purposes in semiconductor product operation and application examples. The incorporation of these circuits,

software, and information in the design of the customer's equipment shall be done under the full responsibility

of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third

parties arising from the use of these circuits, software, and information.

• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,

the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or

property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety

measures in its design, such as redundancy, fire-containment, and anti-failure features.

• NEC devices are classified into the following three quality grades:

"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a

customer designated “quality assurance program“ for a specific application. The recommended applications of

a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device

before using it in a particular application.

Standard: Computers, office equipment, communications equipment, test and measurement equipment,

audio and visual equipment, home electronic appliances, machine tools, personal electronic

equipment and industrial robots

Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed

for life support)

Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems or medical equipment for life support, etc.

The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.

If customers intend to use NEC devices for applications other than those specified for Standard quality grade,

they should contact an NEC sales representative in advance.

M7 98.8

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