UPA1930TE-T1-A [NEC]
Power Field-Effect Transistor, 4.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,;
| 型号： | UPA1930TE-T1-A |
| 厂家： | 
NEC |
| 描述： | Power Field-Effect Transistor, 4.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, |
| 文件： | 总6页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μPA1930
P-CHANNEL MOSFET
FOR SWITCHING
DESCRIPTION
The μPA1930 is a P-channel MOSFET designed for power
PACKAGE DRAWING (Unit : mm)
–0.05
+0.1
+0.1
0.32
0.16
–0.06
switch of portable machine and so on.
FEATURES
−4.5 V drive available
RDS(on)1 = 77 mΩ MAX. (VGS = −10 V, ID = −2.5 A)
RDS(on)2 = 100 mΩ MAX. (VGS = −4.5 V, ID = −2.5 A)
6
1
5
2
4
3
0 to 0.1
ORDERING INFORMATION
0.65
0.95 0.95
1.9
PART NUMBER
μPA1930TE-T1-A
μPA1930TE-T2-A
PACKAGE
0.9 to 1.1
SC-95 (Mini Mold Thin Type)
2.9 0.2
Remark "-A" indicates Pb-free (This product does not contain
Pb in external electrode and other parts).
"-T1", "-T2" indicates the unit orientation (8 mm embossed
carrier tape, 3,000 pcs/reel).
1
3
4
, 2, 5, 6 : Drain
: Gate
: Source
Marking : UA
EQUIVALENT CIRCUIT
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain
Drain to Source Voltage (VGS = 0V)
Gate to Source Voltage (VDS = 0V)
Drain Current (DC) Note1
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
−30
m20
V
V
Body
m4.5
A
Diode
Gate
Drain Current (pulse) Note2
m18
A
Total Power Dissipation
0.2
W
W
°C
°C
Gate
Total Power Dissipation Note1
Channel Temperature
PT2
2.0
Source
Protection
Diode
Tch
150
Storage Temperature
Tstg
−55 to +150
Notes 1. Mounted on FR-4 Board 2500 mm2 × 1.6 mm, t ≤ 5 sec
2. PW ≤ 10 μs, Duty Cycle ≤ 1%
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with caution for
electrostatic discharge. VESD ± 150 V TYP. (C = 200 pF, R = 0 Ω, Single pulse)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G18030EJ1V0DS00 (1st edition)
Date Published April 2006 NS CP(K)
Printed in Japan
2006
μPA1930
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
VDS = −30 V, VGS = 0 V
MIN.
TYP.
MAX.
UNIT
−1
Zero Gate Voltage Drain Current
Gate Leakage Current
μA
μA
V
IDSS
IGSS
m10
−2.5
VGS = m16 V, VDS = 0 V
VDS = −10 V, ID = −1.0 mA
VDS = −10 V, ID = −2.5 A
VGS = −10 V, ID = −2.5 A
VGS = −4.5 V, ID = −2.5 A
VDS = −10 V
−1.0
Gate to Source Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
1
S
58
77
77
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
100
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
325
78
Coss
Crss
VGS = 0 V
f = 1.0 MHz
65
VDD = −15 V, ID = −2.5 A,
VGS = −10 V,
td(on)
tr
td(off)
tf
8.5
3.5
33
Turn-off Delay Time
Fall Time
RG = 6 Ω
19.5
QG
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Diode Forward Voltage Note
Note Pulsed
nC
nC
nC
V
VDD = −24 V,
7.5
VGS = −10 V,
QGS
QGD
1.1
2.3
ID = −4.5 A
0.93
VF(S-D)
IF = 4.5 A, VGS = 0 V
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
V
V
GS(−)
D.U.T.
D.U.T.
90%
V
GS
Wave Form
V
GS
10%
I
G
= −2 mA
R
L
0
R
L
DS(−)
RG
PG.
V
DD
50 Ω
PG.
V
DD
90%
90%
V
DS
10% 10%
V
DS
Wave Form
0
V
GS (−)
0
t
d(on)
tr
t
d(off)
tf
τ
t
on
toff
τ = 1
μs
Duty Cycle ≤ 1%
2
Data Sheet G18030EJ1V0DS
μPA1930
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
120
100
80
60
40
20
0
2.5
2.0
1.5
1.0
0.5
0.0
Mounted on FR-4 board of
2500 mm2 × 1.6 mm
t < 5sec
0
25
50
75 100 125 150 175
0
25
50
75 100 125 150 175
TA - Ambient Temperature - °C
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
-100
-10
R
DS(on) Limited
I
D(pulse)
(VGS = −10 V)
PW= 100 μs
I
D(DC)
-1
1 ms
10 ms
100 ms
5 s
-0.1
Single Pulse
Mounted on FR-4 board of
2500 mm2 × 1.6 mm
-0.01
-0.1
-1
-10
-100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
1
Single Pulse
Mounted on FR-4 board of
2500 mm2 × 1.6 mm
0.1
100 μ
1 m
10 m
100 m
1
10
100
1000
PW - Pulse Width – s
3
Data Sheet G18030EJ1V0DS
μPA1930
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
-20
-16
-12
-8
-10
-1
VDS
Puls ed
= 10 V
−
Pulsed
V
GS = −10 V
TA = 125°C
−4.5 V
-0.1
75°C
25°C
25°C
-0.01
-0.001
-0.0001
−
-4
0
-0.5
-1
-1.5
-2
-2.5
-3
-3.5
0
-1
-2
-3
-4
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
10
1
VDS = 10 V
Puls ed
VDS
= 10 V
−
−
ID= 1.0 mA
−
TA = 25°C
−
25°C
75°C
125°C
0.1
0.01
-50
0
50
100
150
-0.01
-0.1
-1
-10
Tch - Channel Temperature - °C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
RESISTANCE vs. DRAIN CURRENT
200
150
100
50
200
150
100
50
VGS
Pulsed
= 10 V
−
TA
= 125°C
75°C
25°C
−25°C
TA = 125°C
75°C
25°C
25°C
−
VGS = −4.5 V
Pulsed
0
0
-0.1
-1
-10
-100
-0.1
-1
-10
-100
ID - Drain Current - A
ID - Drain Current - A
4
Data Sheet G18030EJ1V0DS
μPA1930
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
200
200
150
100
50
I
D
= −2.5 A
ID = 2.5 A
Puls ed
−
Pulsed
150
100
50
VGS=4.5V
−
10V
−
0
0
-50
0
50
100
150
0
-4
-8
-12
-16
-20
VGS - Gate to Source Voltage - V
Tch - Channel Temperature - °C
CAPACITANCE vs.
SWITCHING CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
1000
100
10
100
V
GS = 0 V
f = 1.0 MHz
t
d(off)
C
iss
t
f
t
d(on)
10
C
oss
t
r
C
rss
V
V
DD = −15 V
GS = −10 V
R = 6 Ω
G
1
-0.1
-0.1
-1
-10
-100
-1
-10
VDS - Drain to Source Voltage - V
ID - Drain Current - A
DYNAMIC INPUT CHARACTERISTICS
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
-10
-8
-6
-4
-2
0
100
VGS = 0 V
Pulsed
I
D
= −4.5 A
VDD = −6.0 V
10
−15 V
−24 V
1
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
0
-2
-4
-6
-8
QG - Gate Charge - nC
VF(S-D) - Source to Drain Voltage - V
5
Data Sheet G18030EJ1V0DS
μPA1930
•
The information in this document is current as of April, 2006. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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appear in this document.
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•
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M8E 02. 11-1
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