UPA2720GR-E2-A [NEC]
Power Field-Effect Transistor, 14A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, POWER SOP-8;
| 型号： | UPA2720GR-E2-A |
| 厂家： | 
NEC |
| 描述： | Power Field-Effect Transistor, 14A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, POWER SOP-8 |
| 文件： | 总6页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA2720GR
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The µ PA2720GR is N-channel MOS Field Effect Transistor
designed for power management applications of notebook
computers and Li-ion battery protection circuit.
8
5
1, 2, ꢀ : Source
4
: Gate
5, 6, 7, 8: Drain
FEATURES
• Low on-state resistance
6.0 0.ꢀ
4.4
RDS(on)1 = 6.6 mΩ MAX. (VGS = 10 V, ID = 7 A)
RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 7 A)
• Low Ciss: Ciss = 2800 pF TYP. (VDS = 10 V, VGS = 0 V)
• Built-in gate protection diode
1
4
5.ꢀ7 MAX.
0.8
0.5 0.2
• Small and surface mount package (Power SOP8)
0.10
1.27 0.78 MAX.
+0.10
–0.05
0.40
0.12 M
ORDERING INFORMATION
PART NUMBER
µ PA2720GR-E1
µ PA2720GR-E1-A
µ PA2720GR-E2
µ PA2720GR-E2-A
PACKAGE
Power SOP8
Power SOP8
Power SOP8
Power SOP8
Note
Note
EQUIVALENT CIRCUIT
Drain
Note Pb-free (This product does not contain Pb in external electrode and other parts.)
Body
Diode
Gate
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
30
20
14
140
1.1
V
V
A
Gate
Protection
Diode
Source
Drain Current (pulse) Note1
A
Total Power Dissipation Note2
Total Power Dissipation (PW = 10 sec) Note2
Channel Temperature
W
W
°C
°C
2.5
150
–55 to +150
Storage Temperature
Tstg
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G17443EJ1V0DS00 (1st edition)
Date Published July 2005 NS CP(K)
Printed in Japan
2005
µ PA2720GR
ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
Gate Leakage Current
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
VDS = 30 V, VGS = 0 V
1
µA
µA
V
VGS = 20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 7 A
VGS = 10 V, ID = 7 A
VGS = 4.5 V, ID = 7 A
VDS = 10 V
10
2.5
Gate Cut-off Voltage
1.0
8
Note
Forward Transfer Admittance
S
Note
Drain to Source On-state Resistance
5.2
7.0
2800
540
360
16
6.6
10
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Coss
Crss
VGS = 0 V
f = 1 MHz
td(on)
tr
VDD = 15 V, ID = 7 A
VGS = 10 V
25
Turn-off Delay Time
Fall Time
td(off)
tf
RG = 10 Ω
70
26
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
VDD = 15 V
27
QGS
QGD
VF(S-D)
trr
VGS = 5 V
7
ID = 14 A
12
Note
Body Diode Forward Voltage
IF = 14 A, VGS = 0 V
IF = 14 A, VGS = 0 V
di/dt = 50 A/µs
0.8
34
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
Qrr
27
Note Pulsed
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
IG
= 2 mA
R
L
V
V
GS
0
R
L
90%
V
GS
Wave Form
VGS
10%
90%
R
G
PG.
V
DD
50 Ω
PG.
VDD
DS
90%
V
0
GS
V
DS
10% 10%
V
DS
Wave Form
0
τ
td(on)
t
r
td(off)
tf
τ = 1 s
µ
Duty Cycle ≤ 1%
ton
toff
2
Data Sheet G17443EJ1V0DS
µ PA2720GR
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
FORWARD BIAS SAFE OPERATING AREA
1 ms
1000
120
100
80
I
D(pulse)
100
10
µ
I
D(DC)
60
1
40
T
A = 25°C
0.1
Single pulse
20
Mounted on glass epoxy board
of 1 inch x 1 inch x 0.8 mm
0.01
0
0
20
40 60
80 100 120 140 160
0.01
0.1
1
10
100
T
A
- Ambient Temperature - ˚C
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
Rth(ch-A) = 114°C/W
1
0.1
T
A
= 25°C
Single pulse
Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm
0.01
100 µ
1 m
10 m 100 m 10 100
1
1000
PW - Pulse Width - s
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
100
10
1
60
50
40
30
20
10
0
VGS = 10 V
4.5 V
T
ch = −55°C
25°C
75°C
150°C
0.1
V
DS = 10 V
Puls ed
Pulsed
0.01
0
0.1
0.2
0.3
0.4
0.5
0
1
2
3
4
5
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
3
Data Sheet G17443EJ1V0DS
µ PA2720GR
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
3
2.5
2
100
10
1
Tch
=
55°C
−
25°C
1.5
1
75°C
150°C
VDS = 10 V
Pulsed
V
DS = 10 V
0.5
0
Pulsed
0.1
0.01
0.1
1
10
100
-50
0
50
100
150
ID - Drain Current - A
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
20
Pulsed
I
D
= 7 A
Pulsed
15
10
15
10
5
V
GS = 4.5 V
10 V
5
0
0
0.1
1
10
100
0
5
10
15
20
ID - Drain Current - A
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
15
10000
1000
100
C
iss
10
V
GS = 4.5 V
10 V
C
oss
C
rss
5
0
I
D
= 7 A
V
GS = 0 V
Pulsed
f = 1MHz
10
-50
0
50
100
150
0.1
1
10
100
Tch - Channel Temperature - °C
VDS - Drain to Source Voltage - V
4
Data Sheet G17443EJ1V0DS
µ PA2720GR
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
100
10
30
20
10
0
6
5
4
3
2
1
0
V
DD = 24 V
15 V
6 V
t
t
d(off)
d(on)
t
f
t
r
V
GS
V
V
DD = 15 V
GS = 10 V
R = 10 Ω
G
V
DS
1
0.1
1
10
100
0
10
20
30
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
100
10
di/dt = 100 A/ s
µ
V
GS = 0 V
10
1
V
GS = 10 V
0 V
0.1
0.01
Pulsed
1
1
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1.2
VF(S-D) - Source to Drain Voltage - V
IF - Diode Forward Current - A
5
Data Sheet G17443EJ1V0DS
µ PA2720GR
•
The information in this document is current as of July, 2005. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
•
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•
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(1)
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M8E 02. 11-1
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