UPA810TF 概述
NPN SILICON HIGH FREQUENCY TRANSISTOR NPN硅高频三极管 射频小信号双极晶体管
UPA810TF 规格参数
生命周期: | Obsolete | 包装说明: | 2 X 1.25 MM, SOT-363, 6 PIN |
Reach Compliance Code: | unknown | 风险等级: | 5.59 |
最大集电极电流 (IC): | 0.1 A | 基于收集器的最大容量: | 1.5 pF |
集电极-发射极最大电压: | 12 V | 配置: | SEPARATE, 2 ELEMENTS |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-G6 |
元件数量: | 2 | 端子数量: | 6 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 4500 MHz | Base Number Matches: | 1 |
UPA810TF 数据手册
通过下载UPA810TF数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载PRELIMINARY DATA SHEET
NPN SILICON HIGH
FREQUENCY TRANSISTOR
UPA810TF
FEATURES
OUTLINE DIMENSIONS (Units in mm)
•
•
•
SMALL PACKAGE OUTLINE:
SOT-363 package measures just 2 mm x 1.25 mm
PACKAGE OUTLINE TS06
(Top View)
LOW HEIGHT PROFILE:
Just 0.60 mm hight
2.1 ± 0.1
1.25 ± 0.1
HIGH COLLECTOR CURRENT:
IC MAX = 100 mA
1
2
6
5
0.65
DESCRIPTION
+0.10
- 0.05
2.0 ± 0.2
(All Leads)
0.22
The UPA810TF contains two NE856 NPN high frequency
siliconbipolarchips. NEC'snewlowprofileTFpackageisideal
for all portable wireless applicatons where reducing compo-
nent height is a prime consideration. Each transistor chip is
independently mounted and easily configured for two stage
cascade LNAs and other similar applications.
1.3
3
4
0.6 ± 0.1
0.45
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
0.13 ±0.05
SYMBOLS
VCBO
VCEO
VEBO
IC
PARAMETERS
UNITS
RATINGS
0 ~ 0.1
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
V
V
20
12
3
PIN OUT
Note:
1. Collector Transistor 1
2. Base Transistor 2
3. Collector Transistor 2
4. Emitter Transistor 2
5. Emitter Transistor 1
6. Base Transistor 1
Pin 1 is the lower left most pin as
the package lettering is oriented
and read left to right.
V
mA
100
PT
Total Power Dissipation
1 Die
2 Die
mW
mW
110
200
TJ
Junction Temperature
Storage Temperature
°C
°C
150
TSTG
-65 to +150
Note: 1.Operation in excess of any one of these parameters may
result in permanent damage.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
UPA810T
S06
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
1.0
ICBO
IEBO
hFE
Collector Cutoff Current at VCB = 10 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
Forward Current Gain1 at VCE = 3 V, IC = 7 mA
µA
µA
1.0
70
120
4.5
0.7
9
250
fT
Gain Bandwidth at VCE = 3 V, IC = 7 mA
GHz
pF
3.0
Cre
|S21E|2
NF
Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz
Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz
Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz
1.5
2.5
dB
7
dB
1.2
hFE1 = Smaller Value of Q1, or Q2
hFE2 = Larger Value of Q1 or Q2
hFE1/hFE2
hFE Ratio:
0.85
Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use
part number UPA810TF-T1, 3K per reel.
California Eastern Laboratories
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
2/99
DATA SUBJECT TO CHANGE WITHOUT NOTICE
UPA810TF 相关器件
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UPA811T | NEC | HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD | 获取价格 | |
UPA811T-A | NEC | RF Small Signal Bipolar Transistor, 0.035A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SO-6 | 获取价格 |
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