UPA867TS-A [NEC]

RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, S Band, Silicon Germanium, NPN, LEAD FREE, 1007, SUPER LEADLESS MINIMOLD PACKAGE-6;


型号：	UPA867TS-A
厂家：	NEC
描述：	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, S Band, Silicon Germanium, NPN, LEAD FREE, 1007, SUPER LEADLESS MINIMOLD PACKAGE-6 ISM频段光电二极管晶体管
文件：	总6页 (文件大小：57K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

NPN SILICON + SiGe RF TWIN TRANSISTOR

µPA867TS

NPN SILICON + SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)

IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PKG)

FEATURES

•

2 different built-in transistors (2SC5435, NESG2107M33)

Q1: High gain transistor

f^T= 12.0 GHz TYP., S21e²= 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz

Q2: Built-in low phase noise SiGe transistor suited for OSC applications

f^T= 10.0 GHz TYP., S21e²= 9.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz

6-pin super lead-less minimold package (1007 PKG)

•

BUILT-IN TRANSISTORS

2SC5435

−

Flat-lead 3-pin thin-type ultra super minimold part No.

3-pin super lead-less minimold part No.

−

NESG2107M33

ORDERING INFORMATION

Part Number

Order Number

Package

Quantity

Supplying Form

µPA867TS

µPA867TS-A

6-pin super lead-less

minimold package

(1007 PKG) (Pb-Free)^Note

50 pcs

• 8 mm wide embossed taping

(Non reel)

• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the

perforation side of the tape

µPA867TS-T3

µPA867TS-T3-A

10 kpcs/reel

Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact

your nearby sales office.

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10423EJ02V0DS (2nd edition)

Date Published September 2005 CP(K)

Printed in Japan

The mark shows major revised points.



NEC Compound Semiconductor Devices, Ltd. 2003, 2005

µPA867TS

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

VCBO

VCEO

VEBO

1.5

100

110

Note

Total Power Dissipation

Ptot

130 in 2 elements

150

Junction Temperature

Storage Temperature

°C

Tstg

−65 to +150

Note Mounted on 1.08 cm²× 1.0 mm (t) glass epoxy PCB

Data Sheet PU10423EJ02V0DS

µPA867TS

ELECTRICAL CHARACTERISTICS (TA = +25°C)

(1) Q1

Parameter

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Symbol

ICBO

Test Conditions

VCB = 5 V, IE = 0 mA

MIN.

−

TYP.

−

MAX.

Unit

−

100

150

−

IEBO

VEB = 1 V, IC = 0 mA

−

Note 1

hFE

VCE = 3 V, IC = 10 mA

10.0

7.0

−

110

12.0

11.0

1.5

Gain Bandwidth Product

Insertion Power Gain

Noise Figure

VCE = 3 V, IC = 10 mA, f = 2 GHz

GHz

S21e²VCE = 3 V, IC = 10 mA, f = 2 GHz

−

VCE = 3 V, IC = 3 mA, f = 2 GHz,

Z^S= Zopt

2.5

Note 2

Reverse Transfer Capacitance

Cre

VCB = 3 V, IE = 0 mA, f = 1 MHz

−

0.4

0.7

(2) Q2

Parameter

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Symbol

ICBO

Test Conditions

VCB = 5 V, IE = 0 mA

MIN.

−

TYP.

−

MAX.

100

220

−

Unit

IEBO

VEB = 0.5 V, IC = 0 mA

−

Note 1

hFE

VCE = 1 V, IC = 5 mA

140

7.0

−

180

10.0

17.0

9.0

−

Gain Bandwidth Product (1)

Gain Bandwidth Product (2)

Insertion Power Gain (1)

Insertion Power Gain (2)

Associated Gain

VCE = 1 V, IC = 5 mA, f = 2 GHz

VCE = 1 V, IC = 20 mA, f = 2 GHz

GHz

−

S21e²VCE = 1 V, IC = 5 mA, f = 2 GHz

S21e²VCE = 1 V, IC = 20 mA, f = 2 GHz

7.5

−

10.0

−

VCE = 1 V, IC = 5 mA, f = 2 GHz,

Z^S= Zopt

7.0

−

Noise Figure

VCE = 1 V, IC = 5 mA, f = 2 GHz,

Z^S= Zopt

−

0.9

0.5

1.5

0.7

Note 2

Reverse Transfer Capacitance

Cre

VCB = 1 V, IE = 0 mA, f = 1 MHz

Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

hFE CLASSIFICATION

Rank

Marking

hFE Value of Q1

hFE Value of Q2

75 to 150

140 to 220

Data Sheet PU10423EJ02V0DS

µPA867TS

PACKAGE DIMENSIONS

6-PIN SUPER LEAD-LESS MINIMOLD (1007 PKG) (UNIT: mm)

0.9 0.05

0.7 0.05

(Top View)

PIN CONNECTIONS

1. Collector (Q1)

2. Emitter (Q1)

3. Collector (Q2)

4. Base (Q2)

5. Emitter (Q2)

6. Base (Q1)

Data Sheet PU10423EJ02V0DS

µPA867TS

When the product(s) listed in this document is subject to any applicable import or export control laws and regulation of the authority

having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license.

•

The information in this document is current as of September, 2005. The information is subject to

change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or

data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all

products and/or types are available in every country. Please check with an NEC sales representative

for availability and additional information.

•

No part of this document may be copied or reproduced in any form or by any means without prior

written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.

NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of

third parties by or arising from the use of NEC semiconductor products listed in this document or any other

liability arising from the use of such products. No license, express, implied or otherwise, is granted under any

patents, copyrights or other intellectual property rights of NEC or others.

•

Descriptions of circuits, software and other related information in this document are provided for illustrative

purposes in semiconductor product operation and application examples. The incorporation of these

circuits, software and information in the design of customer's equipment shall be done under the full

responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third

parties arising from the use of these circuits, software and information.

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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize

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semiconductor products, customers must incorporate sufficient safety measures in their design, such as

redundancy, fire-containment, and anti-failure features.

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"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products

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Customers must check the quality grade of each semiconductor product before using it in a particular

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"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's

data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not

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(Note)

(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.

and also includes its majority-owned subsidiaries.

(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for

NEC (as defined above).

M8E 00. 4-0110

Data Sheet PU10423EJ02V0DS

µPA867TS

For further information, please contact

NEC Compound Semiconductor Devices, Ltd.

http://www.ncsd.necel.com/

E-mail: salesinfo@ml.ncsd.necel.com (sales and general)

techinfo@ml.ncsd.necel.com (technical)

Sales Division TEL: +81-44-435-1573 FAX: +81-44-435-1579

NEC Compound Semiconductor Devices Hong Kong Limited

E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general)

TEL: +852-3107-7303

TEL: +886-2-8712-0478 FAX: +886-2-2545-3859

TEL: +82-2-558-2120

FAX: +82-2-558-5209

FAX: +852-3107-7309

Hong Kong Head Office

Taipei Branch Office

Korea Branch Office

NEC Electronics (Europe) GmbH

http://www.ee.nec.de/

TEL: +49-211-6503-0 FAX: +49-211-6503-1327

California Eastern Laboratories, Inc.

TEL: +1-408-988-3500 FAX: +1-408-988-0279

http://www.cel.com/

0504

相关型号：

UPA867TS-FB-A

RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon Germanium, NPN, LEAD FREE, SUPER LEADLESS MINIMOLD, 1007, 6 PIN