UPC1658G-E1 [NEC]
LOW NOISE, HIGH FREQUENCY Si MMIC AMPLIFIER; 低噪声，高频硅MMIC放大器
| 型号： | UPC1658G-E1 |
| 厂家： | 
NEC |
| 描述： | LOW NOISE, HIGH FREQUENCY Si MMIC AMPLIFIER |
| 文件： | 总12页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC1658G
LOW NOISE, HIGH FREQUENCY Si MMIC AMPLIFIER
DESCRIPTION
The µPC1658G is a silicon monolithic integrated circuit designed as amplifier for high frequency system
applications. Bandwidth and output power level can be determined according to external resistor constants of
negative feedback and final stage collector. This IC is available in 8-pin plastic SOP.
This IC is manufactured using NEC’s 10 GHz fT NESATTM II silicon bipolar process. This process uses silicon
nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and
prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
•
•
Low noise figure
: NF ≤ 3 dB
Due to the external negative feedback circuit, the power gain can be adjustable by selecting appropriate
resistance constants.
: GP ≥ 40 dB @ Without negative feedback resistor
: GP ≥ 18 dB @ With negative feedback resistor
•
•
Wideband response
: f3dB = 1.0 GHz @ GP = 18 dB
External resistor can vary the collector current of the final transistor in the IC to adjust the saturated output level.
APPLICATIONS
•
•
IF buffer amplifier of high frequency system
Measurement equipment
ORDERING INFORMATION
Part Number
Package
8-pin plastic SOP (225 mil)
Marking
1658
Supplying Form
µPC1658G-E1
Embossed tape 12 mm wide.
1 pin is tape pull-out direction.
Qty 2.5 kp/reel.
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: µPC1658G)
Caution TO-99 CAN package (µPC1658A) and 8-pin plastic DIP package (µPC1658C) products are
discontinued.
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P11120EJ3V0DS00 (3rd edition)
Date Published September 1999 N CP(K)
Printed in Japan
The mark
shows major revised points.
©
1996, 1999
µPC1658G
PIN CONNECTIONS
Pin No.
Pin Name
GND
(Top View)
7 6
1
2
3
4
5
6
7
8
8
5
Test Point
Output
VCC
Test Point
Input
1
2
3
4
Bypass
Bypass
PIN EXPLANATION
Pin No.
1
Pin Name
GND
Function and Applications
Internal Equivalent Circuit
Ground pin. This pin should be connected to
system ground with minimum inductance.
Ground pattern on the board should be formed
as possible. All the ground pins must be
connected together with wide ground pattern to
decrease impedance difference.
2
Test Point
Test Point pin. The collector current of Q2 and
Q3 can be varied by connecting an appropriate
external resistance between this pin and GND
or by shorting this pin to GND. By increasing
the collector current of Q3, the output level
improves and the IC can operate as a low-
distortion amplifier.
4 VCC
R3
R1
5 Test point
R4
3
4
Output
VCC
Signal output pin. This pin must be coupled to
signal source with capacitor for DC cut.
Q2
Q1
Q3
R7
Input 6
Power supply pin. This pin should be externally
equipped with bypass capacitor to minimize its
impedance.
3 Output
Bypass 7
Bypass 8
2 Test point
R2
R5
R6
R8
5
6
Test Point
By connecting this pin to the power supply
through an appropriate external resistance or by
shorting this pin directly to the power supply,
the gain can be adjustable (when using pin 2,
short the pin 5 to the power supply).
1 GND
Input
Signal input pin. Through negative feedback
from output pin with an external circuit, the IC
operates as a wideband amplifier.
7
8
Bypass
Emitter bypass pins of Q1. Bypass these pins
to GND with a capacitor.
2
Data Sheet P11120EJ3V0DS00
µPC1658G
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply Voltage
Symbol
Conditions
Rating
Unit
V
VCC
IQ3
TA = +25 °C
TA = +25 °C
12
40
Output Transistor Current
Power Dissipation
mA
mW
PD
Mounted on double copper clad 50 × 50 × 1.6 mm
epoxy glass PWB (TA = +70 °C)
280
Operating Ambient Temperature
Storage Temperature
TA
–40 to +75
°C
°C
Tstg
–55 to +150
ELECTRICAL CHARACTERISTICS (TA = +25 °C, VCC = 10.0 V, ZS = ZL = 50 Ω, Test circuit 1)
Parameter
Circuit Current
Symbol
ICC
Conditions
MIN.
9
TYP.
−
MAX.
18
Unit
mA
dB
dB
dB
dB
dB
No signal
Power Gain 1
Power Gain 2
Power Gain 3
Noise Figure 1
Noise Figure 2
GP1
f = 10 MHz
f = 100 MHz
f = 500 MHz
f = 100 MHz
f = 500 MHz
37
28
14
−
41
45
GP2
31
34
GP3
17
20
NF1
NF2
1.5
2.0
2.5
3.0
−
TEST SET-UP
Power Supply
0.01 µF
Spectrum Analyzer or
Network Analyzer
Signal Generator
INPUT
OUTPUT
Test Circuit
1 to 3
ZL = 50 Ω
ZS = 50 Ω
3
Data Sheet P11120EJ3V0DS00
µPC1658G
TEST CIRCUITS
TEST CIRCUIT 1 (Low-noise amplifier)
Input
0.1
µ
F
8
0.01
5
F
µ
7
2
6
3
1
4
VCC
0.01
F
µ
0.01 F
µ
Output
TEST CIRCUIT 2 (Wideband low-noise amplifier)
Input
0.01
5
µF
µ
0.1
F
8
7
2
6
3
RF
1
4
V
CC
µ
0.01 F
0.01
F
µ
0.01
F
µ
Output
TEST CIRCUIT 3 (Wideband low-noise amplifier with improved output level)
Input
0.01
5
F
µ
0.1
F
8
µ
7
2
6
220 Ω
1
3
4
V
CC
µ
0.01 F
180 Ω
0.01
F
µ
0.01
µF
Output
4
Data Sheet P11120EJ3V0DS00
µPC1658G
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
µ
PC1658G
1
GND
OUT
IN
C1
C3
VCC
Notes 1. 50 × 50 × 0.4 mm double sided copper clad polyimide board.
2. Back side: GND pattern
3. Solder plated on pattern
4.
: Through holes
COMPONENT LIST
Value
0.01 µF
0.1 µF
OpenNote
180 Ω
Remarks
C1 to C3
C4
Necessary to all the test circuits
R1
In the case of Low-noise Amplifier
In the case of Wideband Low-noise Amplifier with improved output level
Note In the case of Low-noise Amplifier, R1 is not mounted.
5
Data Sheet P11120EJ3V0DS00
µPC1658G
TYPICAL CHARACTERISTICS (TA = +25 °C, unless otherwise specified)
POWER DISSIPATION vs. OPERATING
AMBIENT TEMPERATURE
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
800
600
50
40
Test circuit 3
30
20
10
400
200
0
Test circuit 1 and 2
0
–50
0
+50
+100
+150
2
4
6
8
10
12
Operating Ambient Temperature TA (°C)
Supply Voltage VCC (V)
INSERTION POWER GAIN AND NOISE
FIGURE vs. FREQUENCY
INSERTION POWER GAIN vs. FREQUENCY
VCC = 10 V
50
40
30
20
10
0
50
40
30
20
10
0
VCC = 10 V
Test Circuit 1
RF = ∞
Test Circuit 2
GP
RF = 470 Ω
RF = 220 Ω
10
8
6
4
2
NF
0
10 20
50
100 200
500 1 000
10 20
50
100 200
500 1 000 2 000
Frequency f (MHz)
Frequency f (MHz)
OUTPUT POWER OF EACH TONE AND THIRD
ORDER INTERMODULATION DISTORTION vs.
INPUT POWER OF EACH TONE
NOISE FIGURE AND INSERTION POWER
GAIN vs. FREQUENCY
25
20
15
10
5
+40
+20
0
Test Circuit 3
f1 = 500 MHz
f2 = 501 MHz
Test Circuit 3
VCC = 8 V
VCC = 6 V
VCC = 8 V
VCC = 6 V
GP
PO (each)
–20
VCC = 4 V
VCC = 4 V
–40
–60
IM3
VCC = 6 V
VCC = 8 V
VCC = 4 V
VCC = 6 V
VCC = 4 V
NF
–80
VCC = 8 V
–100
0
10 20
50
100 200
500 1 000 2 000
–60 –50 –40 –30 –20 –10
0
+10
Frequency f (MHz)
Input Power of Each Tone Pin (each) (dBm)
6
Data Sheet P11120EJ3V0DS00
µPC1658G
PACKAGE DIMENSIONS
8 PIN PLASTIC SOP (225 mil) (Unit: mm)
8
5
detail of lead end
P
1
4
A
H
I
F
J
G
E
S
B
L
N
S
C
K
M
D
M
NOTE
ITEM MILLIMETERS
Each lead centerline is located within 0.12 mm of
its true position (T.P.) at maximum material condition.
A
5.2±0.2
B
C
0.85 MAX.
1.27 (T.P.)
+0.08
0.42
D
−0.07
E
F
G
H
I
0.1±0.1
1.57±0.2
1.49
6.5±0.3
4.4±0.15
1.1±0.2
J
+0.08
0.17
K
−0.07
L
M
N
0.6±0.2
0.12
0.10
+7°
3°
P
−3°
7
Data Sheet P11120EJ3V0DS00
µPC1658G
NOTES ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation).
All the ground pins must be connected together with wide ground pattern to decrease impedance difference.
(3) Because the components will operate at high frequencies, apply chip capacitors and chip resistors with low
parasitic inductance.
(4) The DC capacitor must be attached to input pin and output pin.
(5) The bypass capacitor should be attached to VCC line.
(6) In case of improved output level type application circuit, observe precaution not to exceed the power
dissipation rating, especially in VCC = 9 V or over.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your NEC sales representative.
Soldering Method
Infrared Reflow
Soldering Conditions
Recommended Condition Symbol
IR35-00-3
Package peak temperature: 235 °C or below
Time: 30 seconds or less (at 210 °C)
Count: 3, Exposure limit: NoneNote
VPS
Package peak temperature: 215 °C or below
Time: 40 seconds or less (at 200 °C)
Count: 3, Exposure limit: NoneNote
VP15-00-3
WS60-00-1
–
Wave Soldering
Partial Heating
Soldering bath temperature: 260 °C or below
Time: 10 seconds or less
Count: 1, Exposure limit: NoneNote
Pin temperature: 300 °C
Time: 3 seconds or less (per side of device)
Exposure limit: NoneNote
Note After opening the dry pack, keep it in a place below 25 °C and 65 % RH for the allowable storage period.
Caution Do not use different soldering methods together (except for partial heating).
For details of recommended soldering conditions for surface mounting, refer to information document
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
8
Data Sheet P11120EJ3V0DS00
µPC1658G
[MEMO]
9
Data Sheet P11120EJ3V0DS00
µPC1658G
[MEMO]
10
Data Sheet P11120EJ3V0DS00
µPC1658G
[MEMO]
11
Data Sheet P11120EJ3V0DS00
µPC1658G
NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8
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