UPC8001GR [NEC]
IF AMPLIFIER IC WITH ON-CHIP MIXER FOR DIGITAL CELLULAR PHONES; 如果带有片上混频器，用于数字移动电话放大器IC
| 型号： | UPC8001GR |
| 厂家： | 
NEC |
| 描述： | IF AMPLIFIER IC WITH ON-CHIP MIXER FOR DIGITAL CELLULAR PHONES |
| 文件： | 总22页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC8001
IF AMPLIFIER IC
WITH ON-CHIP MIXER FOR DIGITAL CELLULAR PHONES
The µPC8001 is a 3-volt IF am plifier IC with an on-chip m ixer developed for digital cellular phones.
The µPC8001 consists of a high-sensitivity lim iter am plifier with an input frequency of 455 kHz, a high-speed
and high-precision linear RSSI (received signal strength indicator ), and a second m ixer with an input frequency
of 80 to 150 MHz.
The µPC8001 features a low 3 m A (TYP.) and 2.2 µA (TYP.) current consum ption at norm al operation and
power-OFF, respectively. Its high-speed charge/discharge circuit enables fast power-ON/OFF switching.
The µPC8001 boasts an extrem ely sm all size packaged in a 14-pin plastic shrink SOP, and low external
capacitances of less than 0.01 µF, in addition to an on-chip RSSI output resistor, and is m ost suitable for
high-density m ounting.
FEATURES
•
•
Low-voltage operation…3 V ±10%
Low power consum ption…(VCC = 3 V)
Mixer
IF am p. + RSSI
0.95 m A (TYP.)
During operation
At power-OFF
2.1 m A (TYP.)
0 µA (TYP.)
2.2 µA (TYP.)
•
•
•
High lim iting sensitivity…–91 dBm (TYP.)
High-precision RSSI linearity…±0.5 dB (TYP.) (VIF IN = –86 to –6 dBm )
High-speed RSSI response tim e
RSSI output rise tim e
RSSI output fall tim e
77µs (TYP.)
113 µs (TYP.)
•
High-speed power-ON/OFF switching tim e
Rise tim e at power-ON
Fall tim e at power-OFF
174 µs (TYP.)
3 µs (TYP.)
•
•
•
External capacitors of less than 0.01 µF
On-chip RSSI output resistor (34 kΩ)
Ultra-com pact package…14-pin plastic shrink SOP
The inform ation in this docum ent is subject to change w ithout notice.
The m ark ★ show s revised points.
Document No. IC-3426
(O.D.No. IC-8949)
Date Published February 1995 P
Printed in Japan
©
1994, 1995
µPC8001
ORDERING INFORMATION
Part num ber
Package
µPC8001GR
14-pin plastic shrink SOP (225 m il)
14-pin plastic shrink SOP (225 m il)
Em bossed carrier taping (Pin 1 located toward tape unwind
direction)
µPC8001GR-E1
14-pin plastic shrink SOP (225 m il)
Em bossed carrier taping (Pin 1 located toward tape wind
direction)
µPC8001GR-E2
2
µPC8001
BLOCK DIAGRAM
Antenna
1 st L-osc
1.5 GHz
or 900 MHz
RF
Amp
130 MHz
BPF
1 st Mixer
455 kHz
BPFNote
2 nd L-osc
129.545 MHz
RM
1.4 kΩ
C
0.01
IF
CFL2
CFL3
C
FL1
CM2
CM1
CM0
µF
COS
0.01
0.01
µF
µF
0.01
µF
0.01
0.01
0.01
0.01
µF
µF
µF
14
µF
11
13
9
8
4
6
7
IF IN
FIL3
FIL1
FIL2
MIX IN1 MIX OUT
OSC IN MIX IN2
IF
Amp
2 nd
Mixer
1
IF OUT
3
RSSI
RSSI OUT
1000 pF
CRS
2
5
10
12
VCC1
PD
VCC2 GND
Note Input/output im pedance of 455 kHz BPF: 1.5 k Ω
3
µPC8001
CONTENTS
1. PIN CONFIGURATION AND PIN FUNCTIONS ............................................................................... 5
2. I/ O EQUIVALENT CIRCUIT ............................................................................................................... 7
3. ELECTRICAL SPECIFICATIONS ........................................................................................................ 8
4. CHARACTERISTIC CURVES ........................................................................................................... 14
5. TEST CIRCUIT EXAMPLE ............................................................................................................... 18
6. PACKAGE DRAWINGS .................................................................................................................... 19
7. RECOMMENDED SOLDERING CONDITIONS ............................................................................ 20
4
µPC8001
1. PIN CONFIGURATION AND PIN FUNCTIONS
(1) PIN CONFIGURATION (Top View )
•
14-pin plastic shrink SOP (225 m il)
IF OUT
PD
1
2
3
4
5
6
7
14
13
12
11
10
9
MIX IN1
MIX IN2
µ
RSSI OUT
FIL3
VCC1
OSC IN
GND
VCC2
IF IN
FIL1
MIX OUT
FIL2
8
FIL1-FIL3
GND
: Filte r
: Gro u n d
IF IN
: In te rm e d ia te Fre q u e n cy In p u t
: In te rm e d ia te Fre q u e n cy Ou tp u t
IF OUT
MIX IN1, MIX IN2 : Mixe r In p u t
MIX OUT
OS C IN
PD
: Mixe r Ou tp u t
: Os cilla to r In p u t
: Po w e r Do w n
RS S I OUT
VCC1, VCC2
: Re ce ive d S ig n a l S tre n g th In d ica to r Ou tp u t
: Po w e r S u p p ly
5
µPC8001
(2) PIN FUNCTIONS
Num ber
Pin Nam e
IF OUT
I/O
O
Function
1
2
IF am plifier output
Power-ON/OFF control signal input
PD
I
High level: Power-ON; Low level: Power-OFF
3
4
PSSI OUT
FIL3
O
—
—
I
RSSI output
Connect capacitor for filter.
IF am plifier and RSSI power pin
IF am plifier input
5
VCC2
6
IF IN
7
FIL1
—
—
O
—
I
Connect capacitor for filter.
Connect capacitor for filter.
Mixer output
8
FIL2
9
MIX OUT
GND
10
11
12
13
14
Ground pin
OSC IN
VCC1
Oscillator input
—
I
Mixer power pin
MIX IN2
MIX IN1
Connect capacitor for filter.
Mixer input
I
6
µPC8001
2. I/ O EQUIVALENT CIRCUIT
Mixer input
IF am plifier output
5 kΩ
5 kΩ
1
µ
A
75
14
13
Oscillator input
RSSI output
V CC2
5 kΩ
34 kΩ
3
5 kΩ
500 Ω
11
IF am plifier input
Pow er-ON/ OFF input
300 kΩ
6
4
8
150 kΩ
1.5 kΩ
2
7
50 kΩ
Mixer output
9
µ
400
A
7
µPC8001
3. ELECTRICAL SPECIFICATIONS
Absolute Maxim um Ratings (TA = 25°C)
Param eter
Supply voltage
Sym bol
VCC
Conditions
Rating
7
Unit
V
Total power dissipation
Operating am bient tem perature
Storage tem perature
PT
300
m W
°C
TA
–30 to +85
–40 to +125
Tstg
°C
Caution Exposure to Absolute Maxim um Ratings for extended periods m ay affect device reliability;
exceeding the ratings could cause perm anent dam age. The param eters apply independently.
The device should be operated w ithin the lim its specified under DC and AC Characteristics.
Recom m ended Operating Conditions (TA = 25°C)
Param eter
Supply voltage
Sym bol
Conditions
MIN.
2.7
TYP.
3.0
MAX.
3.3
Unit
V
VCC
Note1
50 Ω term ination
–100
–113Note2
–86
–20
dBm
Mixer input level
VMIX IN
See Figure 3-1.
LC m atching
–33Note2 dBm
Note1
Note1
Note1
IF am plifier input level
Oscillator input level
VIF IN
–6
–5
dBm
dBm
VOSC IN
–30
–15
455
130
455
IF am plifier input frequency fIF IN
400
500
150
500
kHz
Mixer input frequency
Mixer output frequency
fMIX IN
80
MHz
kHz
fMIX OUT
400
Notes 1. Assum ing a conversion value of 50 Ω, 0 dBm = 0.2236 Vrm s.
2. Depends on board wiring pattern, use as reference value.
8
µPC8001
ELECTRICAL CHARACTERISTICS
(TA = 25°C, VCC1 = VCC2 = 3 V, fMIX IN = 130 MHz, fOSC IN = 129.545 MHz, fIF IN = 455 kHz, CRS = 1000pF, COS = CM1
= CM2 = CM0 = CIF = CFL1 = CFL2 = CFL3 = 0.01µF, 0 dBm = 0.2236 Vrm s)
(1) Mixer
Param eter
Supply current
Sym bol
Conditions
MIN.
15
TYP.
2.1
MAX.
3.0
Unit
m A
ICC1
No signal
VMIN IN = –50dBm
VOSC IN = –15 dBm
See Figure 3-1.
See Figure 3-2.
VOSC IN=–15dBm
See Figure 3-3.
–3 dB point
50Ω term ination
20
23
dB
Conversion gain
CG
1
LC m atching
33Note
–8
Third order intercept
IC3
–13
–5
dBm
dBm
0
–1dB com pression output level
VOMIX
Cut-off frequency
Noise figure
fC
200
20
470
10Note
26
MHz
dB
dB
Ω
1
NF
ISL
ZIM
ZIL
ROM
See Figure 3-6.
Local isolation
Mixer input im pedance
Local input im pedance
Output resistance
48-j383
80-j425
120
Ω
60
180
600
Ω
VON = 3 V
Note2
Power-ON rise tim e
tONM
33
µs
Rise tim e of PD signal : 10 ns
VOF = 0 V
Note3
Power-OFF fall tim e
tOFM
ILM
3
0
200
10
µs
Fall tim e of PD signal : 10 ns
Power-OFF supply current
VOF = 0 V
µA
Notes 1. Depends on board wiring pattern, use as reference value.
2. Tim e until DC voltage of m ixer output reaches ±10% of power-ON value.
3. Tim e until supply current reaches 10% of power-ON value.
(2) Pow er-ON/ OFF
Param eter
Sym bol
VON
Conditions
Power-ON over VON and under VCC
Power-OFF over GND and under VOF
VON = 3 V
MIN.
0.6
TYP.
1.2
1.2
48
MAX.
2.4
Unit
V
Power-ON input voltage
Power-OFF input voltage
Power-ON input current
VOF
V
ION
75
µA
9
µPC8001
(3) IF Am plifier/ RSSI
Param eter
Sym bol
Conditions
MIN.
1.2
TYP.
MAX.
Unit
Supply current
ICC2
VO
LS
ZIN
∆φ
No signal
0.95
1.5
–91
1.5
11
1.3
1.8
–86
1.8
m A
Vp-p
dBm
kΩ
IF am plifier output am plitude
Lim iting sensitivity
VIF IN = –20 dBm
–3dB point, see Figure 4-5.
IF am plifier input im pedance
IF am plifier phase variation
1.2
VIF IN =–86 to –6 dBm
deg
See Figure 4-6 Note1
.
★
RSSI linearity
LRS
VIF IN = –86 to –6 dBm
Recursive calculation
with VIF IN = –60 to –6 dBm
±0.5
±2
dB
RSSI slope
SLRS
ICRS
Recursive calculation
22.3
24.4
30.1
m V/dB
dBm
with VIF IN = –60 to –6 dBm
★
★
RSSI intercept
Recursive calculation
with VIF IN = –60 to –6 dBm
See Figure 3-4.
–135
–118
–104
RSSI output voltage1
VR1
VR2
VR3
ST
VIF IN = –86 dBm
VIF IN = –46 dBm
VIF IN = –6 dBm
0.50
1.60
2.70
0.79
1.79
2.75
1
0.98
1.90
2.82
V
V
RSSI output voltage 2
RSSI output voltage 3
RSSI output tem perature stability
V
VIF IN = –86 to –6 dBm ,
dB
TA = –30 to +85 °C
★
★
★
RSSI rise tim e
RSSI fall tim e
trRS
VIF IN = –6 dBm
77
300
300
µs
µs
See Figure 3-5.
tfRS
VIF IN = –6 dBm
113
See Figure 3-5.
RSSI output ripple
VRRS
ILI
VIF IN = –6 dBm
VOF = 0 V
3
12
10
m Vp-p
µA
Power-OFF supply current
2.2
174
Note2
Power-ON rise tim e
tONI
VON = 3 V, VIF IN = –86 dBm
PD signal rise tim e: 10 ns
600
µs
Note3
Power-OFF fall tim e
tOFI
VOF = 0 V
3
200
µs
PD signal fall tim e: 10 ns
Note4
Note5
IF am plifier output slew rate
RS S I o u tp u t re s is ta n ce
SRO
Rise
Fall
3.4
3.8
34
IF IN
V
= –20 dBm
V/µs
kΩ
ROR
27
41
★
Notes 1. Use the network analyzer at RBW = 3 Hz.
2. Tim e until RSSI output reaches ±10% of power-ON value.
3. Tim e until supply current reaches 10% of power-ON value.
4. Rise: 10% to 90%
5. Fall: 90% to 10%
10
µPC8001
Figure 3-1. Mixer Input
(a ) 50Ω Te rm in a t io n
(b ) LC Ma t ch in g
VMIX IN
VMIX IN
5 pF Note
F
0.01µ
0.01µ
F
14
MIX IN1
14 MIX IN1
Note
50Ω
107 nH
Note The values L and C are affected by the parasitic capacitance and inductance of the board. Therefore,
adjust L and C so that the im pedance at the MIX IN pin from the signal source equals 50Ω.
Rem ark The signal source im pedance is 50Ω.
Figure 3-2. Third Order Intercept
MIX IN1
14
MIX OUT
9
OSC IN
11
VOSC IN = –15 dBm
0.01µF
0.01µF
50 Ω
0.01µ F
1.5 kΩ
50 Ω
16.7 Ω
fOSC IN = 129.545 MHz
Measure 455 kHz component
level with spectrum analyzer
16.7 Ω
16.7 Ω
f = 130 MHz
f
2
f
1
6 dB/OCT
f
f
1
2
= 130.1 MHz
= 130.2 MHz
f1 = 130.1 MHz, f2 = 130.2 MHz
18 dB/OCT
VMIX IN [dBm]
Third order intercept
Rem ark Signal source im pedance is 50Ω.
11
µPC8001
Fig u re 3-3. –1 d B Co m p re s s io n Ou t p u t Le ve l
Fig u re 3-4. RS S I In t e rce p t
1 dB
VOMIX
MIX IN [dBm]
V
IF input level VIF IN [dBm]
RSSI intercept
Fig u re 3-5. RS S I Re s p o n s e Tim e
IF output
90%
RSSI output
10%
t
rRS
t fRS
12
µPC8001
Fig u re 3-6. No is e Fig u re Me a s u re m e n t
SW
28 V
0.01µ
5 pF
F
14
MIX IN1
Noise source
HP346B
107 nH
0.01µ
50 Ω
F
11 OSC IN
47 dB
0.01µ
F
3 kΩ
Spectrum
analyzer
RF
Amp
9
MIX OUT
HP8447F
Th e n o is e fig u re is ca lcu la te d a s fo llo w s :
NF = ENR – 10 lo g (Y – 1)
NF (d B): No is e fig u re
ENR (d B): ENR o f n o is e s o u rce
N2–N1
10
Y: Y = 10
N1 (d Bm ): S p e ctru m a n a lyze r in d ica tio n va lu e a t S W OFF.
N2 (d Bm ): S p e ctru m a n a lyze r in d ica tio n va lu e a t S W ON.
Rem ark This m easurem ent m easures DSB. To m easure SSB, add 3 dB to NF above.
13
µPC8001
4. CHARACTERISTIC CURVES
Figure 4-1. Mixer Supply Current vs. Supply Voltage
4
3
2
1
Recommended operating range
0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Supply voltage VCC1 [V]
Figure 4-2. Mixer Output Level vs. Mixer Input Level
(fMIX IN= 130 MHz, fOSC IN = 129.545 MHz, fMIX OUT = 455 kHz, VOSC IN = –15 dBm )
+20
+10
0
–10
–20
–30
–40
–50
–60
–70
–80
–70
–80
–60
–50
–40
–30
–20
–10
0
Mixer input level VMIX IN [dBm]
14
µPC8001
Figure 4-3. Mixer Conversion Gain vs. Mixer Input Frequency
(VMIX IN= –30 dBm , VOSC IN = –15 dBm , fOSC IN = fMIX IN – fMIX OUT, fMIX OUT = 455 kHz)
30
20
10
3 dB
10
100
200
500 700 1000
Mixer input frequency fMIX IN [MHz]
Figure 4-4. IF Am plifier/ RSSI Supply Current vs. Supply Voltage
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
Recommended operating range
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Supply voltage VCC2 [V]
15
µPC8001
Figure 4-5. IF Am plifier Output Level vs. IF Am plifier Input Level
+30
+20
+10
3dB
0
–10
–20
–30
Limitting sensitivity (–91 dBm)
–110
–100
–90
–80
–70
–60
–50
–40
–30
–20
–10
0
IF amplifier input level VIF IN [dBm]
Figure 4-6. IF Am plifier Output Phase vs. IF Am plifier Input Level
250
φ
∆
= 11 deg TYP.
240
φ
230
–86 –80
–70
–60
–50
–40
–30
–20
–10 –6
0
–90
IF amplifier input level VIF IN [dBm]
16
µPC8001
Figure 4-7. RSSI Output Voltage vs. IF Am plifier Input Level
(The tem perature characteristics curves)
★
3.0
2.5
2.0
1.5
1.0
0.5
0
–120
–110
–100
–90
–80
–70
–60
–50
–40
–30
–20
–10
0
IF amplifier input level VIF IN [dBm]
T
TA
TA
A
= –30 °C
= +25 °C
= +85 °C
Rem arks 1.
2.
The three temperature characteristic curves are virtually identical.
17
µPC8001
★
5. TEST CIRCUIT EXAMPLE
50 Ω
50 Ω
1.5 kΩ
1µF
0.01µF
+
3 V
1000
pF
0.01µF
0.01µF
0.01µF
0.01µF
14
13
12
11
10
9
8
MIX IN1
MIX IN2
VCC1
OSC IN
GND
MIX OUT
FIL2
µ
PC8001GR
IF OUT
1
PD
2
RSSI OUT
3
FIL3
4
CC2
V
IF IN
6
FIL1
5
7
0.01µF
0.01µF
0.01µF
1000 pF
+
3 V
0.01µF
1µF
1000
pF
50 kΩ
3 V
Note
50 Ω
10 pF
Note The value of the capacitance connected to the IF OUT pin (No. 1) includes the capacitances of PCB
wiring patterns and the tester.
Rem ark In three cases of Mixer Input, Third Order Intercept and Noise Figure Measurem ent, refer to
Figures 3-1, 3-2, and 3-6.
18
µPC8001
6. PACKAGE DRAWINGS
14 PIN PLASTIC SHRINK SOP (225 m il)
14
8
detail of lead end
1
7
A
H
I
J
B
L
C
N
M
M
D
P14GM-65-225B-2
NOTE
ITEM
A
B
MILLIMETERS
5.40 MAX.
INCHES
0.213 MAX.
0.030 MAX.
Each lead centerline is located within 0.10
mm (0.004 inch) of its true position (T.P.) at
maximum material condition.
0.75 MAX.
C
0.65 (T.P.)
0.026 (T.P.)
+0.10
+0.004
D
E
0.30
0.012
–0.05
–0.003
±
0.125 0.075
±
0.005 0.003
F
1.8 MAX.
1.44
0.071MAX.
0.057
G
H
I
±
±
6.2 0.3
0.244 0.012
4.4
0.173
J
0.9
0.035
+0.004
+0.10
0.006
K
L
0.15
–0.002
–0.05
+0.008
–0.009
±
0.5 0.2
0.020
M
N
0.10
0.10
0.004
0.004
19
µPC8001
7. RECOMMENDED SOLDERING CONDITIONS
Th e fo llo w in g co n d itio n s m u s t b e m e t fo r s o ld e rin g co n d itio n s o f th e µPC8001. Fo r m o re d e ta ils ,
re fe r to o u r d o cu m e n t “ S EMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL” (IEI-1207).
Please consolt with our sales offices in case other soldering process is used, or in case the soldering is
done under different conditions.
Types of Surface Mount Device
µPC8001GR: 14-p in p la s t ic s h rin k S OP (225 m il)
Soldedering process
Infrared ray reflow
Soldering conditions
Sym bol
Peak tem perature of package surface: 235 ˚C or below,
Reflow tim e: 30 seconds or below (210 ˚C or higher),
Num ber of reflow processes: MAX. 2
IR35-107-2
[Rem ark]
(1) Please start the second reflow process after the tem perature,
raised by the first reflow process, returns to norm al.
(2) Please avoid rem oving the residual flux with water after the
first reflow process.
Partial heating
m ethod
Term inal tem perature: 300 ˚C or below,
———
Tim e: 3 seconds or below (Per one side of the device).
20
µPC8001
Precautions Against Static Electricity
Caution When handling the device, be careful to protect it from static electricity. exposure to a strong
static electricity charge m ay destroy internal transistor junctions. During transportation and
storage, place the device in the conductive tray or case originally provided by NEC for shipping,
or conductive shock absorbing m aterial, m etal case, etc. During assem bly, be sure to ground
the device. Be careful not to place the device on a plastic board and do not touch the device's
pins.
21
µPC8001
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
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