UPD160970MA-6A5 [NEC]
8-ch level shift driver IC; 8通道电平转换驱动器IC
| 型号： | UPD160970MA-6A5 |
| 厂家： | 
NEC |
| 描述： | 8-ch level shift driver IC |
| 文件： | 总11页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PRELIMINARY PRODUCT INFORMATION
MOS INTEGRATED CIRCUIT
µPD160970
8-ch level shift driver IC
DESCRIPTION
The µ PD160970 is a level shift driver IC for LTPS (low-temperature polysilicon) TFT-LCDs featuring a 2-level output
function and incorporates eight on-chip level shifters. This IC realizes a 20 V MAX. withstanding voltage due to a
high-withstanding-voltage CMOS process and has an output ON-resistance and switching characteristics ideal for
TFT driving in LCD panels.
FEATURES
• High withstanding voltage : 20 V (MAX.)
• Supports low-voltage input (logic power supply voltage : 3.0 to 3.6 V)
• Includes 8 level shifters (among which 2 circuits can switch between normal and inverted output)
• Small thin package : 24-pin plastic TSSOP (5.72 mm (225) )
ORDERING INFORMATION
Part Number
Package
µ PD160970MA-6A5
24-pin plastic TSSOP (5.72 mm (225) )
.
The information contained in this document is being issued in advance of the production cycle for the
product. The parameters for the product may change before final production or NEC Electronics
Corporation, at its own discretion, may withdraw the product prior to its production.
Not all products and/or types are availabe in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. S15857EJ4V0PM00 (4th edition)
Date Published January 2003 NS CP (K)
Printed in Japan
The mark ★ shows major revised points.
2003
µ PD160970
1. BLOCK DIAGRAM / PIN CONFIGURATION
• 24-pin plastic TSSOP (5.72 mm (225) )
µ PD160970MA-6A5
2 values
2 values
V
V
V
I1
I2
I3
1
2
L/S
L/S
24
23
22
21
20
19
18
17
16
15
14
13
V
V
V
V
V
V
V
V
O1
O2
EE
CC
O3
O4
O5
O6
3
V
V
I4A
I4B
4
2 values
2 values
5
L/S
L/S
L/S
L/S
V
DD
6
2 values
2 values
V
SS
7
V
V
I5B
I5A
8
9
V
V
V
V
CC
EE
O7
V
I6
I7
I8
10
11
12
2 values
2 values
V
V
L/S
L/S
O8
L/S : Level shifter (VDD→VCC, VSS→VEE)
2
Preliminary Product Information S15857EJ4V0PM
µ PD160970
2. PIN FUNCTIONS
I/O
I/O
Pin Name
Pin
Function
Pin Name
Pin
Function
Symbol
Symbol
VI1
VI2
VI3
1
2
3
Input
Logic input
VO8
VO7
VEE
13
14
15
Output
High-withstanding-voltage
output
−
−
Negative power supply for high
-withstanding-voltage block
Positive power supply for high
-withstanding voltage block
High-withstanding-voltage
output
VI4A
4
VCC
16
Note
VI4B
5
6
VO6
VO5
17
18
Output
VDD
−
Power supply for logic
block
VSS
7
8
9
−
Logic ground
Logic input
VO4
VO3
VCC
19
20
21
Note
VI5B
Input
VI5A
VI6
−
−
Negative power supply for high
-withstanding-voltage block
Positive power supply for high
-withstand-voltage block
High-withstanding-voltage
output
10
VEE
22
VI7
VI8
11
12
VO2
VO1
23
24
Output
Note Use the VI4B and VI5B pins at the DC level.
3. Relation of logic input and High-withstanding-voltage output
3.1 VI1 to VI3, VI6 to VI8
VIn
L
VOn
VCC
VEE
H
High-withstanding-voltage output
V
CC
Logic input
V
DD
V
SS
V
EE
3.2 VI4A/VI4B, VI5A/VI5B
VInA
L
VInB
VOn
VCC
VEE
VEE
VCC
L (DC)
H (DC)
H
L
H
3
Preliminary Product Information S15857EJ4V0PM
µ PD160970
4. Usage Cautions
(1) The power-on sequence is VSS → VDD → logic signal → VEE → VCC, and the power-off sequence is the reverse
sequence.
• VSS and VDD, and VEE and VCC can be powered on simultaneously.
• To prevent an abnormal output operation, it is recommended to fix the logic input during the transition phase of VEE
and VCC to either ”H” or ”L”.
V
CC
V
DD
V
SS
V
EE
Logic signal
Remark The term “logic signal” as used above includes not only the rising edge/falling edge of the signal, but also
“H” or “L” level input.
(2) To ensure the switching characteristics of the VI4A/VI4B and VI5A/VI5B signal input, be sure to make the VI4B and
VI5B pins DC input. Also, be sure to fix unused input pins to “H” or “L”.
(3) Perform thorough evaluation with the actual device for simultaneous switching of multiple output circuits,
bearing in mind the allowable output current during switching.
(4) The output transistors in this device are designed for an impedance of several tens of ohms. Therefore, if
driving a large load, IC malfunction and IC destruction or degradation may result owing to the influence of an
output current of several hundred mAp-p per output. To prevent such malfunction from occurring, a number of
countermeasures can be implemented, including the following.
<1> Use a large-capacitance decoupling capacitor with superior high-frequency characteristics.
<2> Insert in series a damping resistor for limiting the output current between the output pin and the load.
Since the optimum values of constants differ depending on the equipment, determine the correct constants
based on careful evaluation.
(5) Be sure to externally short power-supply pins for which several exist (VCC and VEE).
(6) Do not use the device with multiple output pons shorted. This may cause IC malfunction, destruction, or
degradation.
4
Preliminary Product Information S15857EJ4V0PM
µ PD160970
5. ELECTRICAL SPECIFICATIONS
Absolute Maximum Ratings (TA = 25°C, VSS = 0 V)
Parameter
Symbol
Rating
Unit
V
Logic Part Supply Voltage
VDD
VCC
−0.5 to +4.5
−0.5 to +17.0
Positive power supply for high
-withstanding-voltage block
Negative power supply for high
-withstanding-voltage block
Bias power supply for high
-withstanding-voltage block
V
VEE
−8.0 to +0.5
V
V
VCC -VEE
−0.5 to +25.0
Input Voltage
VI
−0.5 to VDD + 0.5
VEE − 0.5 to VCC + 0.5
−10 to +60
V
V
Output Voltage
VO
TA
Tstg
Pd
Operating Ambient Temperature
Storage Temperature
Power Dissipation
°C
°C
mW
−40 to +125
500Note
Note When a glass epoxy board (100 mm x 100 mm x 1.0 mm, copper-plated area of 15%) is mounted.
Caution Product quality may suffer if the absolute maximum rating is exceeded even momentarily for any
parameter. That is, the absolute maximum ratings are rated values at which the product is on the
verge of suffering physical damage, and therefore the product must be used under conditions that
ensure that the absolute maximum ratings are not exceeded.
Recommended Operating Range (TA = −10 to +60°C, VSS = 0 V)
Parameter
Supply Voltage
Symbol
VDD
Conditions
Unit
MIN.
3.0
TYP.
3.3
MAX.
3.6
V
V
VCC
9.5
11.5
−5.5
17.0
13.5
−4.5
20.0
200
VEE
−6.5
14.0
V
VCC -VEE
fCLK
V
Clock Frequency
kHz
Electrical Characteristics (TA = −10 to +60°C, VDD = 3.3 V ± 0.3 V, VSS = 0 V, VCC = 11.5 V ± 1.0 V, VEE = −5.5 V ±
0.5 V, tr = tf ≤ 5.0 ns)
Parameter
Symbol
VIL
Conditions
All input pins
Unit
MIN.
VSS
TYP.Note
MAX.
0.2 VDD
VDD
Low-Level Input Voltage
High-Level Input Voltage
Low-Level Output Voltage
High-Level Output Voltage
Output ON Resistance
Static Current
V
V
VIH
VOL
VOH
RON
IDD
ICC
IIL
All input pins
0.7 VDD
IOL = +1.0 mA, All output pins
IOH = −1.0 mA, All output pins
IO = ±1.0 mA, All output pins
−5.42
11.42
80
−4.87
V
10.37
V
130
10
Ω
VI = VSS
no load
VDD
VCC
0.1
µA
µA
µA
pF
0.1
10
Input Leak Current
Input Capacitance
VI = VDD or VSS, All input pins
−1.0
1.0
CI
7
★
Note The TYP. value is a reference value when TA = 25°C, VDD = 3.3 V, VCC = 11.5 V, VEE = −5.5 V.
5
Preliminary Product Information S15857EJ4V0PM
µ PD160970
Switching Characteristics (TA = −10 to +60°C, VDD = 3.3 V ± 0.3 V, VSS = 0 V, VCC = 11.5 V ± 1.0 V, VEE = −5.5 V ±
0.5 V, tr = tf ≤ 5.0 ns)
Parameter
Symbol
Condition
Unit
MIN.
TYP.Note
35
MAX.
140
140
140
140
Output delay time1
tPHL1
tPLH1
tPHL2
tPLH2
All output pins, no load,
VO1-VO3, VO6-VO8
All output pins, no load,
VO4, VO5
ns
ns
ns
ns
45
Output delay time2
40
50
Note The TYP. value is a reference value when TA = 25°C, VDD = 3.3 V, VCC = 11.5 V, VEE = −5.5 V.
6
Preliminary Product Information S15857EJ4V0PM
µ PD160970
Switching Characteristics Waveform
t
f
t
r
V
DD
90%
50%
90%
50%
10%
10%
Logic input
V
SS
t
PLH1, tPLH2
t
PHL1, tPHL2
V
CC
50%
50%
High-withstanding-voltage output
VEE
t
PHL2
t
PLH2
V
CC
50%
50%
High-withstanding-voltage output
VEE
7
Preliminary Product Information S15857EJ4V0PM
µ PD160970
6. PACKAGE DRAWING
24-PIN PLASTIC TSSOP (5.72 mm (225))
13
24
detail of lead end
F
G
R
P
L
S
12
1
E
H
I
A
J
A'
S
N
S
C
K
M
B
D
M
NOTE
ITEM MILLIMETERS
Each lead centerline is located within 0.10 mm of
its true position (T.P.) at maximum material condition.
A
A'
B
C
D
E
F
6.65±0.10
6.5±0.1
0.575
0.5 (T.P.)
0.22±0.05
0.1±0.05
1.2 MAX.
1.0±0.05
6.4±0.1
4.4±0.1
1.0±0.1
0.17±0.025
0.5
G
H
I
J
K
L
M
N
0.10
0.08
+5°
3°
P
−3°
R
S
0.25
0.6±0.15
P24MA-50-6A5
8
Preliminary Product Information S15857EJ4V0PM
µ PD160970
7. RECOMMENDED MOUNTING CONDITIONS
The µ PD160970 should be soldered and mounted under the following recommended conditions.
For details of the recommended soldering conditions, refer to the document Semiconductor Device Mounting
Technology Manual (C10535E).
For soldering methods and conditions other than those recommended below, contact an NEC Electronics sales
representative.
Recommended Soldering Conditions for Surface Mounting Type
µ PD160970MA-6A5 : 24-pin plastic TSSOP (5.72 mm (225) )
Soldering Method
Soldering Conditions
Recommended
Condition Symbol
Infrared reflow
Package peak temperature : 235°C, Time : 30 seconds max. (at 210°C or higher), IR35-00-3
Count : Three times or less, Exposure, limit : None, Flux : Rosin flux with low chlorine
(0.2 Wt% or below) recommended
VPS
Package peak temperature : 215°C, Time : 40 seconds max. (at 200°C or higher), VP15-00-3
Count : Three times or less, Exposure, limit : None, Flux : Rosin flux with low chlorine
(0.2 Wt% or below) recommended
Wave Soldering
Package peak temperature : 260°C, Time : 10 seconds max.,
Preheating temperature : 120°C max., Exposure, limit : Once, Flux : Rosin flux with
low chlorine (0.2 Wt% or below) recommended
WS60-00-1
Caution Do not use different soldering methods together.
9
Preliminary Product Information S15857EJ4V0PM
µ PD160970
[MEMO]
10
Preliminary Product Information S15857EJ4V0PM
µ PD160970
NOTES FOR CMOS DEVICES
1
PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
Note:
Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred. Environmental control
must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using
insulators that easily build static electricity. Semiconductor devices must be stored and transported
in an anti-static container, static shielding bag or conductive material. All test and measurement
tools including work bench and floor should be grounded. The operator should be grounded using
wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need
to be taken for PW boards with semiconductor devices on it.
2
HANDLING OF UNUSED INPUT PINS FOR CMOS
Note:
No connection for CMOS device inputs can be cause of malfunction. If no connection is provided
to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence
causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels
of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused
pin should be connected to VDD or GND with a resistor, if it is considered to have a possibility of
being an output pin. All handling related to the unused pins must be judged device by device and
related specifications governing the devices.
3
STATUS BEFORE INITIALIZATION OF MOS DEVICES
Note:
Power-on does not necessarily define initial status of MOS device. Production process of MOS
does not define the initial operation status of the device. Immediately after the power source is
turned ON, the devices with reset function have not yet been initialized. Hence, power-on does
not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the
reset signal is received. Reset operation must be executed immediately after power-on for devices
having reset function.
11
Preliminary Product Information S15857EJ4V0PM
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