UPD44164364F5-E60-EQ1

DATA SHEET

MOS INTEGRATED CIRCUIT

µPD44164084, 44164184, 44164364

18M-BIT DDRII SRAM

4-WORD BURST OPERATION

Description

The µPD44164084 is a 2,097,152-word by 8-bit, the µPD44164184 is a 1,048,576-word by 18-bit and the

µPD44164364 is a 524,288-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS

technology using full CMOS six-transistor memory cell.

The µPD44164084, µPD44164184 and µPD44164364 integrates unique synchronous peripheral circuitry and a

burst counter. All input registers controlled by an input clock pair (K and /K) are latched on the positive edge of K and

/K.

These products are suitable for application which require synchronous operation, high speed, low voltage, high

density and wide bit configuration.

These products are packaged in 165-pin PLASTIC BGA.

Features

• 1.8 ± 0.1 V power supply and HSTL I/O

• DLL circuitry for wide output data valid window and future frequency scaling

• Pipelined double data rate operation

• Common data input/output bus

• Four-tick burst for reduced address frequency

• Two input clocks (K and /K) for precise DDR timing at clock rising edges only

• Two output clocks (C and /C) for precise flight time

and clock skew matching-clock and data delivered together to receiving device

• Internally self-timed write control

• Clock-stop capability with µs restart

• User programmable impedance output

• Fast clock cycle time : 4.0 ns (250 MHz), 5.0 ns (200 MHz), 6.0 ns (167 MHz)

• Simple control logic for easy depth expansion

• JTAG boundary scan

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. M15822EJ7V1DS00 (7th edition)

Date Published July 2004 NS CP(K)

Printed in Japan

The mark

shows major revised points.

2001

µPD44164084, 44164184, 44164364

Ordering Information

Part number

Cycle

Time

ns

Clock

Frequency

MHz

Organization Core Supply

I/O

Package

(word x bit)

Voltage

V

Interface

µPD44164084F5-E40-EQ1

µPD44164084F5-E50-EQ1

µPD44164084F5-E60-EQ1

µPD44164184F5-E40-EQ1

µPD44164184F5-E50-EQ1

µPD44164184F5-E60-EQ1

µPD44164364F5-E50-EQ1

µPD44164364F5-E60-EQ1

4.0

5.0

6.0

4.0

5.0

6.0

5.0

6.0

250

200

167

250

200

167

200

167

2 M x 8-bit

1.8 ± 0.1

HSTL

165-pin PLASTIC

BGA (13 x 15)

1 M x 18-bit

512 K x 36-bit

Data Sheet M15822EJ7V1DS

2

µPD44164084, 44164184, 44164364

Pin Configurations

/××× indicates active low signal.

165-pin PLASTIC BGA (13 x 15)

(Top View)

[µPD44164084F5-EQ1]

1

2

3

A

4

5

/NW1

NC

A

6

7

NC

/NW0

A

8

9

A

10

VSS

NC

VREF

DQ1

NC

TMS

11

CQ

DQ3

NC

DQ2

NC

ZQ

A

B

C

D

E

F

/CQ

NC

/DLL

NC

TDO

V^SS

NC

VREF

NC

DQ6

NC

TCK

R, /W

A

/K

/LD

A

NC

DQ4

NC

DQ5

VDDQ

NC

DQ7

A

K

NC

VDDQ

NC

A

VSS

NC

VSS

A

VSS

VDD

VSS

A

VSS

VDD

VSS

A

VSS

VDDQ

VSS

VDDQ

VSS

G

H

J

NC

DQ0

NC

TDI

K

L

M

N

P

R

VSS

A

C

A

/C

A

: Address inputs

TMS

TDI

: IEEE 1149.1 Test input

: IEEE 1149.1 Clock input

: IEEE 1149.1 Test output

: HSTL input reference input

: Power Supply

: Ground

DQ0 to DQ7

/LD

R, /W

/NW0, /NW1

K, /K

C, /C

CQ, /CQ

ZQ

/DLL

: Data inputs / outputs

: Synchronous load

: Read Write input

: Nibble Write data select

: Input clock

: Output clock

: Echo clock

: Output impedance matching

: DLL disable

TCK

TDO

V^REF

VDD

V^DDQ

V^SS

NC

: No connection

Remark Refer to Package Drawing for the index mark.

Data Sheet M15822EJ7V1DS

3

µPD44164084, 44164184, 44164364

165-pin PLASTIC BGA (13 x 15)

(Top View)

[µPD44164184F5-EQ1]

1

2

V^SS

3

4

5

/BW1

NC

A

6

7

NC

/BW0

A1

8

9

A

10

VSS

NC

11

CQ

A

B

C

D

E

F

/CQ

NC

/DLL

NC

TDO

A

R, /W

A

/K

/LD

A

DQ9

NC

K

NC

VDDQ

NC

A

DQ8

NC

VSS

A0

VSS

A

VSS

DQ7

NC

DQ10

DQ11

NC

VSS

VDD

VSS

A

VSS

VDD

VSS

A

VSS

NC

VDDQ

VSS

VDDQ

VSS

NC

DQ6

DQ5

NC

DQ12

NC

G

H

J

DQ13

VDDQ

NC

VREF

NC

VREF

DQ4

NC

ZQ

NC

K

L

NC

DQ14

NC

DQ3

DQ2

NC

DQ15

NC

M

N

P

R

NC

DQ1

NC

DQ16

DQ17

A

VSS

NC

A

C

A

NC

DQ0

TDI

TCK

A

/C

A

TMS

A0, A1, A

DQ0 to DQ17

/LD

R, /W

/BW0, /BW1

K, /K

C, /C

CQ, /CQ

ZQ

: Address inputs

TMS

TDI

: IEEE 1149.1 Test input

: IEEE 1149.1 Clock input

: IEEE 1149.1 Test output

: HSTL input reference input

: Power Supply

: Ground

: Data inputs / outputs

: Synchronous load

: Read Write input

: Byte Write data select

: Input clock

: Output clock

: Echo clock

: Output impedance matching

: DLL disable

TCK

TDO

V^REF

VDD

V^DDQ

V^SS

NC

: No connection

/DLL

Remark Refer to Package Drawing for the index mark.

Data Sheet M15822EJ7V1DS

4

µPD44164084, 44164184, 44164364

165-pin PLASTIC BGA (13 x 15)

(Top View)

[µPD44164364F5-EQ1]

1

2

3

4

5

/BW2

/BW3

A

6

7

/BW1

/BW0

A1

8

9

A

10

VSS

11

CQ

A

B

C

D

E

F

/CQ

NC

/DLL

NC

TDO

V^SS

NC

R, /W

A

/K

/LD

A

DQ27

NC

DQ18

DQ28

DQ19

DQ20

DQ21

DQ22

VDDQ

DQ32

DQ23

DQ24

DQ34

DQ25

DQ26

A

K

NC

VDDQ

NC

A

NC

DQ8

DQ7

DQ16

DQ6

DQ5

DQ14

ZQ

VSS

A0

VSS

A

VSS

DQ17

NC

DQ29

NC

VSS

VDD

VSS

A

VSS

VDD

VSS

A

VSS

VDDQ

VSS

VDDQ

VSS

DQ15

NC

DQ30

DQ31

VREF

NC

G

H

J

NC

VREF

DQ13

DQ12

NC

DQ4

DQ3

DQ2

DQ1

DQ10

DQ0

TDI

K

L

NC

DQ33

NC

M

N

P

R

DQ11

NC

DQ35

NC

VSS

A

C

A

DQ9

TMS

TCK

A

/C

A

A0, A1, A

DQ0 to DQ35

/LD

R, /W

/BW0 to /BW3

K, /K

C, /C

CQ, /CQ

ZQ

: Address inputs

TMS

TDI

: IEEE 1149.1 Test input

: IEEE 1149.1 Clock input

: IEEE 1149.1 Test output

: HSTL input reference input

: Power Supply

: Ground

: Data inputs / outputs

: Synchronous load

: Read Write input

: Byte Write data select

: Input clock

: Output clock

: Echo clock

: Output impedance matching

: DLL disable

TCK

TDO

V^REF

VDD

V^DDQ

V^SS

NC

: No connection

/DLL

Remark Refer to Package Drawing for the index mark.

Data Sheet M15822EJ7V1DS

5

µPD44164084, 44164184, 44164364

Pin Identification

Symbol

Description

A0

A1

A

Synchronous Address Inputs: These inputs are registered and must meet the setup and hold times around the

rising edge of K. Balls 3A, 10A, and 2A are reserved for the next higher-order address inputs on future devices.

All transactions operate on a burst of four words (two clock periods of bus activity). A0 and A1 are used as the

lowest two address bits for BURST READ and BURST WRITE operations permitting a random burst start

address on x18 and x36 devices. These inputs are ignored when device is deselected or once BURST

operation is in progress.

DQ0 to DQxx Synchronous Data IOs: Input data must meet setup and hold times around the rising edges of K and /K. Output

data is synchronized to the respective C and /C data clocks or to K and /K if C and /C are tied to HIGH.

x8 device uses DQ0 to DQ7.

x18 device uses DQ0 to DQ17.

x36 device uses DQ0 to DQ35.

/LD

Synchronous Load: This input is brought LOW when a bus cycle sequence is to be defined. This definition

includes address and read/write direction. All transactions operate on a burst of 4 data (two clock periods of bus

activity).

R, /W

Synchronous Read/Write Input: When /LD is LOW, this input designates the access type (READ when R, /W is

HIGH, WRITE when R, /W is LOW) for the loaded address. R, /W must meet the setup and hold times around

the rising edge of K.

/BWx

/NWx

Synchronous Byte Writes (Nibble Writes on x8): When LOW these inputs cause their respective byte or nibble

to be registered and written during WRITE cycles. These signals must meet setup and hold times around the

rising edges of K and /K for each of the two rising edges comprising the WRITE cycle. See Pin Configurations

for signal to data relationships.

K, /K

C, /C

Input Clock: This input clock pair registers address and control inputs on the rising edge of K, and registers data

on the rising edge of K and the rising edge of /K. /K is ideally 180 degrees out of phase with K. All synchronous

inputs must meet setup and hold times around the clock rising edges.

Output Clock: This clock pair provides a user controlled means of tuning device output data. The rising edge of

/C is used as the output timing reference for first and third output data. The rising edge of C is used as the

output reference for second and fourth output data. Ideally, /C is 180 degrees out of phase with C. C and /C

may be tied HIGH to force the use of K and /K as the output reference clocks instead of having to provide C and

/C clocks. If tied HIGH, C and /C must remain HIGH and not be toggled during device operation.

Synchronous Echo Clock Outputs. The rising edges of these outputs are tightly matched to the synchronous

data outputs and can be used as a data valid indication. These signals run freely and do not stop when Q

tristates.

Output Impedance Matching Input: This input is used to tune the device outputs to the system data bus

impedance. DQ and CQ output impedance are set to 0.2 x RQ, where RQ is a resistor from this bump to

ground. This pin cannot be connected directly to GND or left unconnected. Also, in this product, there is no

function to minimize the output impedance by connecting ZQ directly to V^DDQ.

CQ, /CQ

ZQ

/DLL

DLL Disable: When LOW, this input causes the DLL to be bypassed for stable low frequency operation.

TMS

TDI

IEEE 1149.1 Test Inputs: 1.8V I/O levels. These balls may be left Not Connected if the JTAG function is not

used in the circuit.

TCK

IEEE 1149.1 Clock Input: 1.8V I/O levels. This pin must be tied to VSS if the JTAG function is not used in the

circuit.

TDO

VREF

VDD

IEEE 1149.1 Test Output: 1.8V I/O level.

HSTL Input Reference Voltage: Nominally V^DDQ/2. Provides a reference voltage for the input buffers.

Power Supply: 1.8V nominal. See DC Characteristics and Operating Conditions for range.

VDDQ

Power Supply: Isolated Output Buffer Supply. Nominally 1.5V. 1.8V is also permissible. See DC Characteristics

and Operating Conditions for range.

VSS

NC

Power Supply: Ground

No Connect: These signals are internally connected and appear in the JTAG scan chain as the logic level

applied to the ball sites. These signals may be connected to ground to improve package heat dissipation.

Data Sheet M15822EJ7V1DS

6

µPD44164084, 44164184, 44164364

Block Diagram

CLK

Burst

Logic

A1'

A1

D1

D0

Q1

Q0

A0

A0'

R

Address

Register

Address

/LD

/W

E

Compare

/C

C

A0''

A0'''

Output control

Logic

Write address

Register

K

E

A0'

Input

Register

/A0'

A0'

ZQ

0

2 :1

MUX

Memory

Array

CLK

/A0'

K

1

A0'

Output Buffer

E

DQ

0

1

/K

Input

Register

E

A0'''

Output Enable

Register

C

R, /W

Register

E

Data Sheet M15822EJ7V1DS

7

µPD44164084, 44164184, 44164364

Burst Sequence

Linear Burst Sequence Table

[µPD44164184, µPD44164364]

A1, A0

0, 0

A1, A0

0, 1

A1, A0

1, 0

A1, A0

1, 1

External Address

1st Internal Burst Address

2nd Internal Burst Address

3rd Internal Burst Address

0, 1

1, 0

1, 1

0, 0

1, 0

1, 1

0, 0

0, 1

1, 1

0, 0

0, 1

1, 0

Truth Table

Operation

WRITE cycle

/LD R, /W

CLK

DQ

L

L → H

Data in

Data out

High-Z

Load address, input write data on two

consecutive K and /K rising edge

READ cycle

Input data

Input clock

D(A1)

D(A2)

D(A3)

D(A4)

K(t+1) ↑

/K(t+1) ↑

K(t+2) ↑

/K(t+2) ↑

L

H

Load address, read data on two

consecutive C and /C rising edge

NOP (No operation)

Output data

Q(A1)

Q(A2)

Q(A3)

Q(A4)

Output clock /C(t+1) ↑

C(t+2) ↑ /C(t+2) ↑ C(t+3) ↑

H

X

STANDBY(Clock stopped)

Stopped Previous state

Remarks 1. H : High level, L : Low level, × : don’t care, ↑ : rising edge.

2. Data inputs are registered at K and /K rising edges. Data outputs are delivered at C and /C rising edges

except if C and /C are HIGH then Data outputs are delivered at K and /K rising edges.

3. All control inputs in the truth table must meet setup/hold times around the rising edge (LOW to HIGH) of

K. All control inputs are registered during the rising edge of K.

4. This device contains circuitry that will ensure the outputs will be in high impedance during power-up.

5. Refer to state diagram and timing diagrams for clarification.

6. A1 refers to the address input during a WRITE or READ cycle. A2, A3 and A4 refer to the next internal

burst address in accordance with the linear burst sequence.

7. It is recommended that K = /K = C = /C when clock is stopped. This is not essential but permits most

rapid restart by overcoming transmission line charging symmetrically.

Data Sheet M15822EJ7V1DS

8

µPD44164084, 44164184, 44164364

Byte Write Operation

[µPD44164084]

Operation

K

L → H

–

/K

–

/NW0

/NW1

Write DQ0 to DQ7

0

1

0

1

0

1

L → H

–

Write DQ0 to DQ3

Write DQ4 to DQ7

Write nothing

L → H

–

L → H

–

L → H

–

L → H

–

L → H

–

L → H

Remark H : High level, L : Low level, → : rising edge.

[µPD44164184]

Operation

K

L → H

–

/K

–

/BW0

/BW1

Write DQ0 to DQ17

0

1

0

1

0

1

L → H

–

Write DQ0 to DQ8

Write DQ9 to DQ17

Write nothing

L → H

–

L → H

–

L → H

–

L → H

–

L → H

–

L → H

Remark H : High level, L : Low level, → : rising edge.

[µPD44164364]

Operation

K

L → H

–

/K

–

/BW0

/BW1

/BW2

/BW3

Write DQ0 to DQ35

0

1

0

1

0

1

0

1

0

1

0

1

0

1

L → H

–

Write DQ0 to DQ8

Write DQ9 to DQ17

Write DQ18 to DQ26

Write DQ27 to DQ35

Write nothing

L → H

–

L → H

–

L → H

–

L → H

–

L → H

–

L → H

–

L → H

–

L → H

–

L → H

–

L → H

Remark H : High level, L : Low level, → : rising edge.

Data Sheet M15822EJ7V1DS

9

µPD44164084, 44164184, 44164364

Bus Cycle State Diagram

LOAD NEW

ADDRESS

Count = 0

Load, Count = 4

READ DOUBLE

Write

Read

WRITE DOUBLE

Count = Count + 2

Always

Count = 2

Always

Count = 2

Load

NOP,

Count = 4

ADVANCE ADDRESS

BY TWO

ADVANCE ADDRESS

BY TWO

NOP

Supply voltage provided

Power UP

Remarks 1. A0 and A1 are internally advanced in accordance with the burst order table.

Bus cycle is terminated after burst count = 4.

2. State transitions: L = (/LD = LOW); /L = (/LD = HIGH); R = (/R, W = HIGH); W = (/R, W = LOW).

3. State machine control timing sequence is controlled by K.

Data Sheet M15822EJ7V1DS

10

µPD44164084, 44164184, 44164364

Electrical Specifications

Absolute Maximum Ratings

Parameter

Supply voltage

Symbol Conditions

MIN.

–0.5

0

TYP.

MAX.

Unit

V

VDD

VDDQ

VIN

+2.9

Output supply voltage

Input voltage

VDD

VDD + 0.5 (2.9 V MAX.)

VDDQ + 0.5 (2.9 V MAX.)

70

V

Input / Output voltage

Operating ambient temperature

Storage temperature

VI/O

TA

V

°C

Tstg

–55

+125

Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause

permanent damage. The device is not meant to be operated under conditions outside the limits

described in the operational section of this specification. Exposure to Absolute Maximum Rating

conditions for extended periods may affect device reliability.

Recommended DC Operating Conditions (T^A= 0 to 70 °C)

Parameter

Supply voltage

Symbol

VDD

Conditions

MIN.

1.7

TYP.

MAX.

1.9

Unit

V

Note

Output supply voltage

High level input voltage

Low level input voltage

Clock input voltage

VDDQ

VIH (DC)

VIL (DC)

VIN

1.4

VDD

V

1

VREF + 0.1

–0.3

VDDQ + 0.3

VREF – 0.1

VDDQ + 0.3

0.95

V

1, 2

V

–0.3

V

Reference voltage

VREF

0.68

V

Notes 1. During normal operation, VDDQ must not exceed VDD.

2. Power-up: V^IH≤ VDDQ + 0.3 V and VDD ≤ 1.7 V and VDDQ ≤ 1.4 V for t ≤ 200 ms

Recommended AC Operating Conditions (TA = 0 to 70 °C)

Parameter

High level input voltage

Low level input voltage

Symbol

VIH (AC)

VIL (AC)

Conditions

MIN.

VREF + 0.2

–

TYP.

MAX.

–

Unit

V

Note

1

VREF – 0.2

V

Note 1. Overshoot: VIH (AC) ≤ VDD + 0.7 V for t ≤ TKHKH/2

Undershoot: V^{IL (AC)}≥ – 0.5 V for t ≤ TKHKH/2

Control input signals may not have pulse widths less than TKHKL (MIN.) or operate at cycle rates less than

TKHKH (MIN.).

Data Sheet M15822EJ7V1DS

11

µPD44164084, 44164184, 44164364

DC Characteristics (TA = 0 to 70°C, VDD = 1.8 ± 0.1 V)

Parameter

Symbol

Test condition

MIN.

TYP.

MAX.

Unit

Note

x8, x18 x36

Input leakage current

I/O leakage current

Operating supply current

(Read Write cycle)

ILI

–2

–

+2

µA

ILO

IDD

VIN ≤ VIL or VIN ≥ VIH, –E40

620

540

470

320

−

mA

II/O = 0 mA

–E50

–E60

620

570

–

Cycle = MAX.

Standby supply current

(NOP)

ISB1

VIN ≤ VIL or VIN ≥ VIH, –E40

mA

II/O = 0 mA

–E50

–E60

270

250

Cycle = MAX.

High level output voltage

Low level output voltage

VOH(Low) |IOH| ≤ 0.1 mA

VOH Note1

VOL(Low) IOL ≤ 0.1 mA

VOL Note2

VDDQ – 0.2

VDDQ/2–0.12

VSS

–

VDDQ

VDDQ/2+0.12

0.2

V

3, 4

VDDQ/2–0.12

VDDQ/2+0.12

Notes 1. Outputs are impedance-controlled. | IOH | = (VDDQ/2)/(RQ/5) for values of 175 Ω ≤ RQ ≤ 350 Ω.

2. Outputs are impedance-controlled. I^OL= (VDDQ/2)/(RQ/5) for values of 175 Ω ≤ RQ ≤ 350 Ω.

3. AC load current is higher than the shown DC values.

4. HSTL outputs meet JEDEC HSTL Class I and Class II standards.

Capacitance (TA = 25 °C, f = 1MHz)

Parameter

Input capacitance

Symbol

CIN

Test conditions

VIN = 0 V

MIN.

TYP.

MAX.

Unit

pF

4

6

5

7

6

Input / Output capacitance

Clock Input capacitance

CI/O

VI/O = 0 V

Vclk = 0 V

pF

Cclk

pF

Remark These parameters are periodically sampled and not 100% tested.

Data Sheet M15822EJ7V1DS

12

µPD44164084, 44164184, 44164364

AC Characteristics (TA = 0 to 70 °C, VDD = 1.8 ± 0.1 V)

AC Test Conditions

Input waveform (Rise / Fall time ≤ 0.3 ns)

1.25 V

0.75 V

0.25 V

0.75 V

Test Points

Output waveform

V

DDQ / 2

Test Points

VDDQ / 2

Output load condition

Figure 1. External load at test

V

DDQ / 2

0.75 V

50 Ω

V

REF

ZO = 50 Ω

SRAM

250 Ω

ZQ

Data Sheet M15822EJ7V1DS

13

µPD44164084, 44164184, 44164364

Read and Write Cycle

-E40

-E50

-E60

Parameter

Symbol

Unit Note

(250 MHz)

(200 MHz)

(167 MHz)

MIN.

MAX.

MIN.

MAX.

MIN.

MAX.

Clock

Average Clock cycle time (K, /K, C, /C) TKHKH

ns

1

2

4.0

–

8.4

0.2

–

5.0

–

8.4

0.2

–

2.3

2.8

3.55

–

6.0

–

8.4

0.2

–

Clock phase jitter (K, /K, C, /C)

Clock HIGH time (K, /K, C, /C)

Clock LOW time (K, /K, C, /C)

Clock to /clock (K→/K., C→/C.)

Clock to /clock (/K→K., /C→C.)

TKC var

TKHKL

TKLKH

TKH /KH

T /KHKH

1.6

1.8

0

2.0

2.2

–

0

2.4

2.7

–

0

–

Clock to data clock 200 to 250 MHz TKHCH

1.8

2.3

2.8

3.55

–

(K→C., /K→/C.)

167 to 200 MHz

133 to 167 MHz

< 133 MHz

2.8

3.55

–

DLL lock time (K, C)

K static to DLL reset

TKC lock

TKC reset

Cycle

ns

3

1,024

30

1,024

30

1,024

30

–

Output Times

C, /C HIGH to output valid

C, /C HIGH to output hold

C, /C HIGH to echo clock valid

C, /C HIGH to echo clock hold

CQ, /CQ HIGH to output valid

CQ, /CQ HIGH to output hold

C HIGH to output High-Z

TCHQV

TCHQX

ns

–

–0.45

–

–0.45

–

–0.3

–

–0.45

0.45

–

0.45

–

0.3

–

0.45

–

–0.45

–

–0.45

–

–0.35

–

–0.45

0.45

–

0.45

–

0.35

–

0.45

–

–0.5

–

–0.5

–

–0.4

–

–0.5

0.5

–

0.5

–

0.4

–

0.5

–

TCHCQV

TCHCQX

TCQHQV

TCQHQX

TCHQZ

4

C HIGH to output Low-Z

TCHQX1

Setup Times

Address valid to K rising edge

Synchronous load input (/LD),

read write input (R, /W) valid to

K rising edge

TAVKH

TIVKH

ns

5

0.5

–

0.6

–

0.7

–

Data inputs and write data select

inputs (/BWx, /NWx) valid to

K, /K rising edge

TDVKH

ns

5

0.35

–

0.4

–

0.5

–

Hold Times

K rising edge to address hold

K rising edge to

TKHAX

TKHIX

ns

5

0.5

–

0.6

–

0.7

–

synchronous load input (/LD),

read write input (R, /W) hold

K, /K rising edge to data inputs and

write data select inputs (/BWx, /NWx)

hold

TKHDX

ns

5

0.35

–

0.4

–

0.5

–

Data Sheet M15822EJ7V1DS

14

µPD44164084, 44164184, 44164364

Notes 1. The device will operate at clock frequencies slower than TKHKH(MAX.).

2. Clock phase jitter is the variance from clock rising edge to the next expected clock rising edge.

3. V^DDslew rate must be less than 0.1 V DC per 50 ns for DLL lock retention.

DLL lock time begins once V^DDand input clock are stable.

It is recommended that the device is kept inactive during these cycles.

4. Echo clock is very tightly controlled to data valid / data hold. By design, there is a 0.1 ns variation from

echo clock to data. The data sheet parameters reflect tester guardbands and test setup variations.

5. This is a synchronous device. All addresses, data and control lines must meet the specified setup

and hold times for all latching clock edges.

Remarks 1. This parameter is sampled.

2. Test conditions as specified with the output loading as shown in AC Test Conditions

unless otherwise noted.

3. Control input signals may not be operated with pulse widths less than TKHKL (MIN.).

4. If C, /C are tied HIGH, K, /K become the references for C, /C timing parameters.

5. V^DDQ is 1.5 V DC.

Data Sheet M15822EJ7V1DS

15

µPD44164084, 44164184, 44164364

Read and Write Timing

NOP

1

READ

(burst of 4)

READ

(burst of 4)

NOP

WRITE

(burst of 4)

WRITE

(burst of 4)

READ

(burst of 4)

2

3

4

5

6

7

8

9

10

11

12

13

TKHKH

K

TKHKL TKLKH

TKLKH

TKH/KH

T/KHKH

/K

/LD

TIVKH

TKHIX

R, /W

TAVKH

TKHAX

Address

DQ

A2

A1

A3

A4

A0

TKHDX

TDVKH

D21

D22

D23

D24

D31 D32

D33

D34

Q41

Q01 Q02 Q03

TCHQX

Q04

Q11

Q12

Q13

Q14

Qx2

TCQHQX

TCHQX

TCQHQV

TCHQX1

TCHQV

TKHCH

TCHQV

TCHQZ

CQ

TCHCQX

TCHCQV

/CQ

C

TCHCQX

TCHCQV

TKHKL TKLKH TKHKH TKH/KH T/KHKH

/C

Remarks 1. Q01 refers to output from address A0.

Q02 refers to output from the next internal burst address following A0, etc.

2. Outputs are disable (high impedance) one clock cycle after a NOP.

3. The second NOP cycle is not necessary for correct device operation;

however, at high clock frequencies it may be required to prevent bus contention.

Data Sheet M15822EJ7V1DS

16

µPD44164084, 44164184, 44164364

JTAG Specification

These products support a limited set of JTAG functions as in IEEE standard 1149.1.

Test Access Port (TAP) Pins

Pin name

TCK

Pin assignments

2R

Description

Test Clock Input. All input are captured on the rising edge of TCK and all outputs

propagate from the falling edge of TCK.

TMS

TDI

10R

11R

Test Mode Select. This is the command input for the TAP controller state machine.

Test Data Input. This is the input side of the serial registers placed between TDI and

TDO. The register placed between TDI and TDO is determined by the state of the TAP

controller state machine and the instruction that is currently loaded in the TAP instruction.

Test Data Output. Output changes in response to the falling edge of TCK. This is the

output side of the serial registers placed between TDI and TDO.

TDO

1R

Remark The device does not have TRST (TAP reset). The Test-Logic Reset state is entered while TMS is held high

for five rising edges of TCK. The TAP controller state is also reset on the SRAM POWER-UP.

JTAG DC Characteristics (T^A= 0 to 70°C, VDD = 1.8 ± 0.1 V, unless otherwise noted)

Parameter

Symbol

ILI

Conditions

MIN.

–5.0

TYP.

MAX.

+5.0

Unit

µA

Note

JTAG Input leakage current

JTAG I/O leakage current

0 V ≤ VIN ≤ VDD

–

ILO

0 V ≤ VIN ≤ VDDQ,

µA

Outputs disabled

JTAG input high voltage

JTAG input low voltage

JTAG output high voltage

VIH

VIL

1.3

–0.3

1.6

1.4

–

VDD + 0.3

V

+0.5

–

VOH1

VOH2

VOL1

VOL2

| IOHC | = 100 µA

| IOHT | = 2 mA

IOLC = 100 µA

IOLT = 2 mA

–

JTAG output low voltage

0.2

0.4

–

Data Sheet M15822EJ7V1DS

17

µPD44164084, 44164184, 44164364

JTAG AC Test Conditions

Input waveform (Rise / Fall time ≤ 1 ns)

1.8 V

0.9 V

0 V

0.9 V

Test Points

Output waveform

0.9 V

Test Points

0.9 V

Output load

Figure 2. External load at test

V

TT = 0.9 V

50 Ω

ZO = 50 Ω

TDO

20 pF

Data Sheet M15822EJ7V1DS

18

µPD44164084, 44164184, 44164364

JTAG AC Characteristics (TA = 0 to 70 °C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Note

Clock

Clock cycle time

Clock frequency

Clock high time

Clock low time

tTHTH

fTF

100

–

10

–

ns

MHz

ns

tTHTL

tTLTH

40

–

ns

Output time

TCK low to TDO unknown

TCK low to TDO valid

TDI valid to TCK high

TCK high to TDI invalid

tTLOX

tTLOV

tDVTH

tTHDX

0

–

20

–

ns

10

–

Setup time

TMS setup time

Capture setup time

tMVTH

tCS

10

–

ns

Hold time

TMS hold time

Capture hold time

tTHMX

tCH

10

–

ns

JTAG Timing Diagram

t

THTH

TCK

TMS

TDI

t

MVTH

t

THTL

t

TLTH

t

THMX

t

DVTH

t

THDX

t

TLOV

t

TLOX

TDO

Data Sheet M15822EJ7V1DS

19

µPD44164084, 44164184, 44164364

Scan Register Definition (1)

Register name

Description

Instruction register

The instruction register holds the instructions that are executed by the TAP controller when it is

moved into the run-test/idle or the various data register state. The register can be loaded when it is

placed between the TDI and TDO pins. The instruction register is automatically preloaded with the

IDCODE instruction at power-up whenever the controller is placed in test-logic-reset state.

The bypass register is a single bit register that can be placed between TDI and TDO. It allows serial

test data to be passed through the RAMs TAP to another device in the scan chain with as little delay

as possible.

The ID Register is a 32 bit register that is loaded with a device and vendor specific 32 bit code when

the controller is put in capture-DR state with the IDCODE command loaded in the instruction register.

The register is then placed between the TDI and TDO pins when the controller is moved into shift-DR

state.

Bypass register

ID register

Boundary register

The boundary register, under the control of the TAP controller, is loaded with the contents of the

RAMs I/O ring when the controller is in capture-DR state and then is placed between the TDI and

TDO pins when the controller is moved to shift-DR state. Several TAP instructions can be used to

activate the boundary register.

The Scan Exit Order tables describe which device bump connects to each boundary register

location. The first column defines the bit’s position in the boundary register. The second column is

the name of the input or I/O at the bump and the third column is the bump number.

Scan Register Definition (2)

Register name

Instruction register

Bypass register

ID register

Bit size

Unit

bit

3

1

bit

32

107

bit

Boundary register

bit

ID Register Definition

Part number Organization ID [31:28] vendor revision no.

ID [27:12] part no.

0000 0000 0001 0101

0000 0000 0001 0110

0000 0000 0001 0111

ID [11:1] vendor ID no.

00000010000

ID [0] fix bit

µPD44164084

µPD44164184

µPD44164364

2M x 8

1M x 18

XXXX

1

00000010000

512K x 36

00000010000

Data Sheet M15822EJ7V1DS

20

µPD44164084, 44164184, 44164364

SCAN Exit Order

Bit

Signal name

Bump

ID

Bit

Signal name

Bump

ID

Bit

Signal name

Bump

ID

no.

x8

x18 x36

no.

x8

x18

x36

no.

x8

x18

NC

x36

NC

1

2

/C

C

A

6R

6P

6N

7P

7N

7R

8R

8P

9R

37

38

39

40

41

42

43

44

45

46

47

48

49

50

51

52

53

54

NC

10D

9E

73

74

NC

2C

3E

2D

2E

1E

2F

3F

1G

1F

DQ4 DQ11 DQ20

3

NC DQ7 DQ17 10C

75

NC

DQ29

NC

4

NC

NC DQ16 11D

76

5

NC

9C

9D

77

NC

6

78

DQ12 DQ30

7

DQ3 DQ8 DQ8 11B

79

NC

DQ21

NC

8

NC

NC DQ7 11C

80

9

NC

CQ

–

NC

9B

10B

11A

Internal

9A

81

NC

10

11

12

13

14

15

16

17

NC DQ0 DQ0 11P

82

DQ5 DQ13 DQ22 3G

NC

NC DQ9 10P

83

NC

DQ31 2G

NC

10N

9P

84

NC

1J

2J

A

85

NC DQ1 DQ11 10M

A

8B

86

DQ14 DQ23

3K

3J

NC

NC DQ10 11N

A

A1

A0

/LD

A1

A0

7C

87

NC

DQ32

NC

9M

9N

NC

6C

88

2K

1K

2L

3L

1M

1L

3N

8A

89

NC

18 DQ0 DQ2 DQ2 11L

NC

NC /BW1 7A

90

DQ6 DQ15 DQ33

19

20

21

22

23

24

25

NC

NC DQ1 11M

55 /NW0 /BW0 /BW0 7B

91

NC

DQ24

NC

9L

56

57

58

K

6B

6A

92

10L

/K

93

NC

NC DQ3 DQ3 11K

NC

NC /BW3 5B

94

DQ16 DQ25

NC

NC DQ12 10K

59 /NW1 /BW1 /BW2 5A

95

NC

DQ34 3M

NC

9J

60

61

62

63

64

65

66

67

68

69

70

71

72

R, /W

A

4A

5C

4B

3A

1H

1A

96

NC

1N

2M

3P

2N

2P

1P

3R

4R

4P

5P

5N

5R

9K

97

26 DQ1 DQ4 DQ13 10J

A

98

DQ7 DQ17 DQ26

27

28

29

30

31

32

33

34

NC

NC DQ4 11J

A

NC

99

NC

A

DQ35

NC

ZQ

NC

11H

10G

9G

/DLL

/CQ

100

101

102

103

104

105

106

107

NC

NC DQ9 DQ27 2B

NC DQ5 DQ5 11F

NC

NC DQ18 3B

A

NC

NC DQ14 11G

NC

1C

1B

A

NC

9F

A

10F

NC DQ10 DQ19 3D

A

35 DQ2 DQ6 DQ6 11E

36 NC NC DQ15 10E

NC

NC DQ28 3C

NC NC 1D

A

Data Sheet M15822EJ7V1DS

21

µPD44164084, 44164184, 44164364

JTAG Instructions

Instructions

EXTEST

Description

The EXTEST instruction allows circuitry external to the component package to be tested. Boundary-

scan register cells at output pins are used to apply test vectors, while those at input pins capture test

results. Typically, the first test vector to be applied using the EXTEST instruction will be shifted into the

boundary scan register using the PRELOAD instruction. Thus, during the update-IR state of EXTEST,

the output driver is turned on and the PRELOAD data is driven onto the output pins.

IDCODE

BYPASS

The IDCODE instruction causes the ID ROM to be loaded into the ID register when the controller is in

capture-DR mode and places the ID register between the TDI and TDO pins in shift-DR mode. The

IDCODE instruction is the default instruction loaded in at power up and any time the controller is placed

in the test-logic-reset state.

The BYPASS instruction is loaded in the instruction register when the bypass register is placed between

TDI and TDO. This occurs when the TAP controller is moved to the shift-DR state. This allows the

board level scan path to be shortened to facilitate testing of other devices in the scan path.

SAMPLE / PRELOAD SAMPLE / PRELOAD is a Standard 1149.1 mandatory public instruction. When the SAMPLE /

PRELOAD instruction is loaded in the instruction register, moving the TAP controller into the capture-DR

state loads the data in the RAMs input and DQ pins into the boundary scan register. Because the RAM

clock(s) are independent from the TAP clock (TCK) it is possible for the TAP to attempt to capture the

I/O ring contents while the input buffers are in transition (i.e., in a metastable state). Although allowing

the TAP to sample metastable input will not harm the device, repeatable results cannot be expected.

RAM input signals must be stabilized for long enough to meet the TAPs input data capture setup plus

hold time (t^CSplus tCH). The RAMs clock inputs need not be paused for any other TAP operation except

capturing the I/O ring contents into the boundary scan register. Moving the controller to shift-DR state

then places the boundary scan register between the TDI and TDO pins.

SAMPLE-Z

If the SAMPLE-Z instruction is loaded in the instruction register, all RAM DQ pins are forced to an

inactive drive state (high impedance) and the boundary register is connected between TDI and TDO

when the TAP controller is moved to the shift-DR state.

JTAG Instruction Coding

IR2

0

IR1

0

IR0

0

Instruction

EXTEST

Note

1

0

1

IDCODE

0

1

0

SAMPLE-Z

0

1

RESERVED

SAMPLE / PRELOAD

RESERVED

BYPASS

1

0

1

0

1

0

1

Note 1. TRISTATE all DQ pins and CAPTURE the pad values into a SERIAL SCAN LATCH.

Data Sheet M15822EJ7V1DS

22

µPD44164084, 44164184, 44164364

TAP Controller State Diagram

1

0

Test-Logic-Reset

0

1

Run-Test / Idle

Select-DR-Scan

0

Select-IR-Scan

0

1

Capture-DR

0

Capture-IR

0

Shift-DR

1

Shift-IR

1

Exit1-DR

0

Exit1-IR

0

Pause-DR

1

Pause-IR

1

0

Exit2-DR

1

Exit2-IR

1

Update-DR

Update-IR

1

0

1

0

Disabling the Test Access Port

It is possible to use this device without utilizing the TAP. To disable the TAP Controller without interfering with normal

operation of the device, TCK must be tied to VSS to preclude mid level inputs.

TDI and TMS are designed so an undriven input will produce a response identical to the application of a logic 1, and

may be left unconnected. But they may also be tied to VDD through a 1 kΩ resistor.

TDO should be left unconnected.

Data Sheet M15822EJ7V1DS

23

µPD44164084, 44164184, 44164364

Package Drawing

165-PIN PLASTIC BGA (13x15)

B

E

w S

B

ZD

ZE

11

10

9

8

A

7

6

D

5

4

3

2

1

R P M M L K J H G F E D C B A

w

S A

INDEX MARK

A

A2

A1

y1

S

y

e

S

(UNIT:mm)

ITEM DIMENSIONS

M

φ

x

b

S A B

D

E

13.00 0.10

15.00 0.10

0.15

w

e

1.00

A

1.40 0.11

0.40 0.05

1.00

A1

A2

b

0.50 0.05

0.08

x

y

0.10

y1

ZD

ZE

0.20

1.50

0.50

P165F5-100-EQ1

Data Sheet M15822EJ7V1DS

26

µPD44164084, 44164184, 44164364

Recommended Soldering Condition

Please consult with our sales offices for soldering conditions of these products.

Types of Surface Mount Devices

µPD44164084F5-EQ1: 165-pin PLASTIC BGA (13 x 15)

µPD44164184F5-EQ1: 165-pin PLASTIC BGA (13 x 15)

µPD44164364F5-EQ1: 165-pin PLASTIC BGA (13 x 15)

Data Sheet M15822EJ7V1DS

27

µPD44164084, 44164184, 44164364

Revision History

Edition/

Page

7th edition/ Throughout Throughout

Feb. 2004 p.12 p.12

Type of

revision

Location

Description

Date

This

edition

(Previous edition → This edition)

Deletion

Ordering Information

µPD44164364F5-E40-EQ1

Modification DC Characteristics IDD (MAX.)

MAX.

x8, x18

Unit

MAX.

x8, x18

Unit

mA

x36

TBD

530

480

x36

−

-E40

-E50

-E60

560

480

410

mA

-E40

-E50

-E60

620

540

470

620

570

DC Characteristics ISB1 (MAX.)

MAX.

x8, x18

Unit

MAX.

Unit

mA

x36

x8, x18

320

x36

-E40

-E50

-E60

250

210

190

mA

-E40

-E50

-E60

−

270

250

p.26

Modification Package Drawing

Preliminary version → Standardized version

Data Sheet M15822EJ7V1DS

28

µPD44164084, 44164184, 44164364

[MEMO]

Data Sheet M15822EJ7V1DS

29

µPD44164084, 44164184, 44164364

[MEMO]

Data Sheet M15822EJ7V1DS

30

µPD44164084, 44164184, 44164364

NOTES FOR CMOS DEVICES

1

VOLTAGE APPLICATION WAVEFORM AT INPUT PIN

Waveform distortion due to input noise or a reflected wave may cause malfunction. If the input of the

CMOS device stays in the area between V^IL(MAX) and VIH (MIN) due to noise, etc., the device may

malfunction. Take care to prevent chattering noise from entering the device when the input level is fixed,

and also in the transition period when the input level passes through the area between V^IL(MAX) and

V

IH (MIN).

HANDLING OF UNUSED INPUT PINS

2

Unconnected CMOS device inputs can be cause of malfunction. If an input pin is unconnected, it is

possible that an internal input level may be generated due to noise, etc., causing malfunction. CMOS

devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed

high or low by using pull-up or pull-down circuitry. Each unused pin should be connected to V^DDor GND

via a resistor if there is a possibility that it will be an output pin. All handling related to unused pins must

be judged separately for each device and according to related specifications governing the device.

3

PRECAUTION AGAINST ESD

A strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and

ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as

much as possible, and quickly dissipate it when it has occurred. Environmental control must be

adequate. When it is dry, a humidifier should be used. It is recommended to avoid using insulators that

easily build up static electricity. Semiconductor devices must be stored and transported in an anti-static

container, static shielding bag or conductive material. All test and measurement tools including work

benches and floors should be grounded. The operator should be grounded using a wrist strap.

Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for

PW boards with mounted semiconductor devices.

4

STATUS BEFORE INITIALIZATION

Power-on does not necessarily define the initial status of a MOS device. Immediately after the power

source is turned ON, devices with reset functions have not yet been initialized. Hence, power-on does

not guarantee output pin levels, I/O settings or contents of registers. A device is not initialized until the

reset signal is received. A reset operation must be executed immediately after power-on for devices

with reset functions.

Data Sheet M15822EJ7V1DS

31

µPD44164084, 44164184, 44164364

•

The information in this document is current as of July, 2004. The information is subject to change

without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or

data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all

products and/or types are available in every country. Please check with an NEC Electronics sales

representative for availability and additional information.

• No part of this document may be copied or reproduced in any form or by any means without the prior

written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may

appear in this document.

•

NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual

property rights of third parties by or arising from the use of NEC Electronics products listed in this document

or any other liability arising from the use of such products. No license, express, implied or otherwise, is

granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.

Descriptions of circuits, software and other related information in this document are provided for illustrative

purposes in semiconductor product operation and application examples. The incorporation of these

circuits, software and information in the design of a customer's equipment shall be done under the full

responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by

customers or third parties arising from the use of these circuits, software and information.

•

• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,

customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To

minimize risks of damage to property or injury (including death) to persons arising from defects in NEC

Electronics products, customers must incorporate sufficient safety measures in their design, such as

redundancy, fire-containment and anti-failure features.

• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and

"Specific".

The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-

designated "quality assurance program" for a specific application. The recommended applications of an NEC

Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of

each NEC Electronics product before using it in a particular application.

"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio

and visual equipment, home electronic appliances, machine tools, personal electronic equipment

and industrial robots.

"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed

for life support).

"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems and medical equipment for life support, etc.

The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC

Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications

not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to

determine NEC Electronics' willingness to support a given application.

(Note)

(1)

"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its

majority-owned subsidiaries.

(2)

"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as

defined above).

M8E 02. 11-1


型号：	UPD44164364F5-E60-EQ1
厂家：	NEC
描述：	18M-BIT DDRII SRAM 4-WORD BURST OPERATION 18M位DDRII SRAM 4字突发操作内存集成电路静态存储器双倍数据速率时钟
文件：	总32页 (文件大小：391K)
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UPD44164364F5-E60-EQ1 [NEC]

相关型号：

UPD44164365AF5-E33-EQ2

UPD44164365AF5-E33-EQ2-A

UPD44164365AF5-E40-EQ2-A

UPD44164365AF5-E40-EQ2-A

UPD44164365AF5-E50-EQ2

UPD44164365AF5-E50-EQ2-A

UPD44164365F5-E50-EQ1

UPD44164365F5-E60-EQ1

UPD44165082

UPD44165082AF5-E40-EQ2

UPD44165082AF5-E40-EQ2-A

UPD44165082AF5-E40Y-EQ2-A