UPG2137T5A_技术文档

DATA SHEET

GaAs INTEGRATED CIRCUIT

µPG2137T5A

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION

The µPG2137T5A is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another L-

band application.

This device is housed in a 16-pin TSON (Thin small out-line non-leaded) package. And this package is able to

high-density surface mounting.

FEATURES

•

Operation frequency

Supply voltage

Circuit current

Power gain

: f^opt1= 893 to 960 MHz (0.8 GHz Band side)

: f^opt2= 1 429 to 1 453 MHz (1.5 GHz Band side)

: V^{DD1, 3}= 2.55 to 2.85 V (2.7 V TYP.)

: V^{DD2, 4}= 3.0 to 4.3 V (3.2 V TYP.)

: I^DD1= 28 mA TYP. @ V^DD1= 2.7 V, V^DD2= 3.2 V, V^AGC= 2.5 V (0.8 GHz Band side)

: I^DD2= 33 mA TYP. @ V^DD3= 2.7 V, V^DD4= 3.2 V, V^AGC= 2.5 V (1.5 GHz Band side)

: G^P1= 27 dB TYP. @ V^DD1= 2.7 V, V^DD2= 3.2 V, V^AGC= 2.5 V (0.8 GHz Band side)

G^P2= −13 dB TYP. @ V^DD1= 2.7 V, V^DD2= 3.2 V, V^AGC= 0.5 V (0.8 GHz Band side)

G^P3= 30 dB TYP. @ V^DD3= 2.7 V, V^DD4= 3.2 V, V^AGC= 2.5 V (1.5 GHz Band side)

G^P4= −10 dB TYP. @ V^DD3= 2.7 V, V^DD4= 3.2 V, V^AGC= 0.5 V (1.5 GHz Band side)

: P^{adj1, 3}= −60 dBc TYP. @ V^{DD1, 3}= 2.7 V, V^{DD2, 4}= 3.2 V, V^AGC= 2.5 V, P^out= +11 dBm,

∆f = ±50 kHz, 21 kHz Bandwidth (0.8/1.5 GHz Band side)

•

Low distortion

High-density surface mounting : 16-pin TSON package (3.3 × 2.3 × 0.6 mm)

APPLICATION

Digital Cellular: PDC 0.8/1.5 GHz Dual Band etc.

•

ORDERING INFORMATION

Part Number

Package

Marking

2137

Supplying Form

• Embossed tape 12 mm wide

µPG2137T5A-E1 16-pin TSON

• Pin 8, 9 face the perforation side of the tape

• Qty 3 kpcs/reel

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: µPG2137T5A

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PG10340EJ01V0DS (1st edition)

Date Published March 2003 CP(K)

Printed in Japan

NEC Compound Semiconductor Devices 2003

µPG2137T5A

PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM

Pin No.

Pin Name

(Top View)

1

2

INPUT1 (0.8 GHz Band side)

16 15 14 13 12 11 10

9

16 15 14 13 12 11 10

9

GND

3

4

V^DD1(0.8 GHz Band side)

V^DD2(0.8 GHz Band side)

GND

2137

5

6

7

OUTPUT1 (0.8 GHz Band side)

OUTPUT2 (0.8 GHz Band side)

V^SW(0.8 GHz Band side)

OUTPUT3 (1.5 GHz Band side)

V^DD4(1.5 GHz Band side)

V^DD3(1.5 GHz Band side)

GND

1

9

2

3

4

5

6

7

8

1

2

3

4

5

6

7

8

(Bottom View)

10 11 12 13 14 15 16

9

10

11

12

13

14

15

16

GND

INPUT2 (1.5 GHz Band side)

V^AGC

8

7

6

5

4

3

2

1

ABSOLUTE MAXIMUM RATINGS (T^A= +25°C, unless otherwise specified)

Parameter

Supply Voltage1, 2, 3, 4

Gain Control Voltage

Switch Control Volage

Input Power 1 (1 pin)

Input Power 2 (15 pin)

Power Dissipation

Symbol

V^{DD1, 2, 3, 4}

V^AGC

V^SW

Ratings

Unit

V

5.0

V

5.0

0

V

Pⁱⁿ¹

dBm

mW

°C

Pⁱⁿ²

0

P^D

140^Note

−30 to +90

−40 to +150

Operating Ambient Temperature

Storage Temperature

T^A

T^stg

°C

Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB, T^A= +85°C

2

Data Sheet PG10340EJ01V0DS

µPG2137T5A

RECOMMENDED OPERATING RANGE (T^A= +25°C, unless otherwise specified)

Parameter

Operating Frequency 1

Operating Frequency 2

Supply Voltage1, 3

Symbol

f^opt1

MIN.

893

1 429

2.55

3.0

0.5

0

TYP.

−

MAX.

960

Unit

MHz

V

f^opt2

−

1 453

2.85

4.3

V^{DD1, 3}

V^{DD2, 4}

V^AGC

V^SW

2.7

3.2

−

Supply Voltage2, 4

V

Gain Control Voltage

Switch Control Voltage

Input Power 1 (1 pin)

Input Power 2 (15 pin)

2.5

V

−

2.85

−10

V

Pⁱⁿ¹

−

−17

−20

dBm

Pⁱⁿ²

−

−10

ELECTRICAL CHARACTERISTICS (T^A= +25°C, V^{DD1, 3}= 2.7 V, V^{DD2, 4}= 3.2 V, π/4DQPSK modulated

signal input, with external input and output matching, unless otherwise specified)

0.8 GHz Band side

Parameter

Operating Frequency 1

Circuit Current 1

Symbol

f^opt1

Test Conditions

MIN.

893

−

TYP.

−

MAX.

960

35

Unit

MHz

mA

dB

I^DD1

Pⁱⁿ= −17 dBm, V^AGC= 2.5 V

Pⁱⁿ= −17 dBm, V^AGC= 0.5 V

28

Power Gain 1

G^P1

25

−

27

−

Power Gain 2

G^P2

−13

−60

−10

−55

dB

Adjacent Channel Power Leakage 1

P^adj1

P^out= +11 dBm, V^AGC= 2.5 V,

−

dBc

∆f = ±50 kHz, 21 kHz Bandwidth

Adjacent Channel Power Leakage 2

Noize Figure 1

P^adj2

NF¹

P^out= +11 dBm, V^AGC= 2.5 V,

−

−70

−65

dBc

dB

∆f = ±100 kHz, 21 kHz Bandwidth

3

−

1.5 GHz Band side

Parameter

Operating Frequency 2

Circuit Current 2

Symbol

f^opt2

Test Conditions

MIN.

TYP.

−

MAX.

1 453

40

Unit

MHz

mA

dB

1 429

I^DD2

Pⁱⁿ= −20 dBm, V^AGC= 2.5 V

Pⁱⁿ= −20 dBm, V^AGC= 0.5 V

−

28

−

33

Power Gain 3

G^P3

30

−

Power Gain 4

G^P4

−10

−60

−7

dB

Adjacent Channel Power Leakage 3

P^adj3

P^out= +11 dBm, V^AGC= 2.5 V,

−

−55

dBc

∆f = ±50 kHz, 21 kHz Bandwidth

Adjacent Channel Power Leakage 4

Noize Figure 2

P^adj4

NF²

P^out= +11 dBm, V^AGC= 2.5 V,

−

−70

−65

dBc

dB

∆f = ±100 kHz, 21 kHz Bandwidth

5

−

3

Data Sheet PG10340EJ01V0DS

µPG2137T5A

0.8 GHz/1.5 GHz Band

Parameter

Symbol

I^AGC

Test Conditions

MIN.

TYP.

MAX.

300

Unit

Gain Control Current

V^{DD1, 3}= 2.7/0 V, V^{DD2, 4}= 3.2/0 V,

V^AGC= 0.5/2.5 V

−200

−

µA

Switch Control Current

I^SW

V^SW= 2.7/0 V

−10

−

100

µA

4

Data Sheet PG10340EJ01V0DS

µPG2137T5A

EVALUATION CIRCUIT

(f^opt1= 893 to 960 MHz, f^opt2= 1 429 to 1 453 MHz, V^{DD1, 3}= 2.7 V, V^{DD2, 4}= 3.2 V)

VDD3

VDD4

22 nF

1 nF

INPUT2

V

AGC

5.6 nH

3.3 nH

8.2 nH

OUTPUT3

VSW

16

15

14

13

12

11

10

9

1

2

3

4

5

6

7

8

12 nH

10 nH

OUTPUT2

OUTPUT1

INPUT1

22 nF

1 nF

VDD1

VDD2

The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.

5

Data Sheet PG10340EJ01V0DS

µPG2137T5A

ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD

Vd1/1.5G

Vd2/1.5G

V2049kai / 16pinTSON

Ver.02 / polyimide

OUT/1.5G

IN1/1.5G

Vsw2

C3

C4

L3

L5

L4

2137

L2

L1

Vagc

C1

OUT2/800M

C2

IN/800M

OUT1/800M

Vd1/800M

Vd2/800M

USING THE NEC EVALUATION BOARD

Symbol

Values

12 nH

10 nH

8.2 nH

3.3 nH

5.6 nH

22 nF

1 nF

L1

L2

L3

L4

L5

C1, C4

C2, C3

6

Data Sheet PG10340EJ01V0DS

µPG2137T5A

TYPICAL CHARACTERISTICS (T^A= +25°C, unless otherwise specified)

0.8 GHz Band side (INPUT1 − OUTPUT1, f = 960 MHz, V^DD1= 2.7 V, V^DD2= 3.2 V, V^SW= 0 V)

CIRCUIT CURRENT1, OUTPUT POWER,

ADJACENT CHANNEL POWER LEAKAGE1, 2

vs. INPUT POWER

CIRCUIT CURRENT1, OUTPUT POWER,

ADJACENT CHANNEL POWER LEAKAGE1, 2

vs. GAIN CONTROL VOLTAGE

50

45

40

35

30

25

20

15

10

5

–20

–25

–30

–35

–40

–45

–50

–55

–60

–65

–70

40

35

30

25

20

15

10

5

0

–5

V

AGC = 2.5 V

P

in = –17 dBm

I

DD1

–10

–15

–20

–25

–30

–35

–40

–45

–50

–55

–60

–65

–70

∆

I

DD1

P

out

P

adj1

–5

P

out

–10

–15

–20

–25

–30

Padj2

P

adj1

adj2

0

–5

–10

–75

–80

0

–75

–80

3.0

–35

–40

–30

–25

–20

–15

–10

–5

0

0.5

1.0

1.5

2.0

2.5

Input Power Pin (dBm)

Gain Control Voltage VAGC (V)

0.8 GHz Band side (INPUT1 − OUTPUT2, f = 960 MHz, V^DD1= 2.7 V, V^DD2= 3.2 V, V^SW= V^DD1)

CIRCUIT CURRENT1, OUTPUT POWER,

ADJACENT CHANNEL POWER LEAKAGE1, 2

vs. INPUT POWER

CIRCUIT CURRENT1, OUTPUT POWER,

ADJACENT CHANNEL POWER LEAKAGE1, 2

vs. GAIN CONTROL VOLTAGE

50

45

40

35

30

25

20

15

10

5

–20

–25

–30

–35

–40

–45

–50

–55

–60

–65

–70

40

35

30

25

20

15

10

5

0

–5

V

AGC = 2.5 V

P

in = –17 dBm

I

DD1

–10

–15

–20

–25

–30

–35

–40

–45

–50

–55

–60

–65

–70

∆

P

out

I

DD1

P

adj1

–5

–10

–15

–20

–25

–30

P

out

P

adj2

P

adj1

adj2

0

–5

–10

–30

–75

–80

0

–35

–40

–75

–80

3.0

–25

–20

–15

–10

–5

0

0.5

1.0

1.5

2.0

2.5

Input Power Pin (dBm)

Gain Control Voltage VAGC (V)

7

Data Sheet PG10340EJ01V0DS

µPG2137T5A

1.5 GHz Band side (INPUT2 − OUTPUT3, f = 1 453 MHz, V^DD3= 2.7 V, V^DD4= 3.2 V)

CIRCUIT CURRENT2, OUTPUT POWER,

ADJACENT CHANNEL POWER LEAKAGE3, 4

vs. INPUT POWER

CIRCUIT CURRENT2, OUTPUT POWER,

ADJACENT CHANNEL POWER LEAKAGE3, 4

vs. GAIN CONTROL VOLTAGE

60

55

50

–20

–25

–30

–35

–40

–45

–50

–55

–60

–65

–70

40

35

30

25

20

15

10

5

0

5

–10

–15

–20

–25

–30

0

–5

P

in = –20 dBm

V

AGC = 2.5 V

I

DD2

I

DD2

–10

–15

–20

–25

–30

–35

–40

–45

–50

–55

–60

–65

–70

P

adj3

∆

45

40

35

30

25

20

15

10

P

out

P

adj4

out

P

adj3

adj4

5

0

–30

–75

–80

0

–35

–40

–75

–80

3.0

P

–25

–20

–15

–10

–5

0

0.5

1.0

1.5

2.0

2.5

Input Power Pin (dBm)

Gain Control Voltage VAGC (V)

Remark The graphs indicate nominal characteristics

8

Data Sheet PG10340EJ01V0DS

µPG2137T5A

PACKAGE DIMENSIONS

16-PIN PLASTIC TSON (UNIT: mm)

3.5±0.15

3.3±0.1

0.16±0.05

0.4±0.05

(Bottom View)

(0.55)

(2.2)

Remark ( ) : Reference value

9

Data Sheet PG10340EJ01V0DS

µPG2137T5A

RECOMMENDED SOLDERING CONDITIONS

This product should be soldered and mounted under the following recommended conditions. For soldering

methods and conditions other than those recommended below, contact your nearby sales office.

Soldering Method

Infrared Reflow

Soldering Conditions

Condition Symbol

IR260

Peak temperature (package surface temperature)

Time at peak temperature

: 260°C or below

: 10 seconds or less

: 60 seconds or less

: 120±30 seconds

: 3 times

Time at temperature of 220°C or higher

Preheating time at 120 to 180°C

Maximum number of reflow processes

Maximum chlorine content of rosin flux (% mass)

: 0.2%(Wt.) or below

VPS

Peak temperature (package surface temperature)

Time at temperature of 200°C or higher

Preheating time at 120 to 150°C

: 215°C or below

: 25 to 40 seconds

: 30 to 60 seconds

: 3 times

VP215

WS260

HS350

Maximum number of reflow processes

Maximum chlorine content of rosin flux (% mass)

: 0.2%(Wt.) or below

Wave Soldering

Partial Heating

Peak temperature (molten solder temperature)

Time at peak temperature

: 260°C or below

: 10 seconds or less

Preheating temperature (package surface temperature) : 120°C or below

Maximum number of flow processes

: 1 time

Maximum chlorine content of rosin flux (% mass)

: 0.2%(Wt.) or below

Peak temperature (pin temperature)

: 350°C or below

Soldering time (per side of device)

: 3 seconds or less

: 0.2%(Wt.) or below

Maximum chlorine content of rosin flux (% mass)

Caution Do not use different soldering methods together (except for partial heating).

10

Data Sheet PG10340EJ01V0DS

µPG2137T5A

•

The information in this document is current as of March, 2003. The information is subject to change

without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data

books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products

and/or types are available in every country. Please check with an NEC sales representative for

availability and additional information.

•

No part of this document may be copied or reproduced in any form or by any means without prior

written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.

NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of

third parties by or arising from the use of NEC semiconductor products listed in this document or any other

liability arising from the use of such products. No license, express, implied or otherwise, is granted under any

patents, copyrights or other intellectual property rights of NEC or others.

•

Descriptions of circuits, software and other related information in this document are provided for illustrative

purposes in semiconductor product operation and application examples. The incorporation of these

circuits, software and information in the design of customer's equipment shall be done under the full

responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third

parties arising from the use of these circuits, software and information.

While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers

agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize

risks of damage to property or injury (including death) to persons arising from defects in NEC

semiconductor products, customers must incorporate sufficient safety measures in their design, such as

redundancy, fire-containment, and anti-failure features.

NEC semiconductor products are classified into the following three quality grades:

"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products

developed based on a customer-designated "quality assurance program" for a specific application. The

recommended applications of a semiconductor product depend on its quality grade, as indicated below.

Customers must check the quality grade of each semiconductor product before using it in a particular

application.

"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio

and visual equipment, home electronic appliances, machine tools, personal electronic equipment

and industrial robots

"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed

for life support)

"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems and medical equipment for life support, etc.

The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's

data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not

intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness

to support a given application.

(Note)

(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.

and also includes its majority-owned subsidiaries.

(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for

NEC (as defined above).

M8E 00. 4-0110

11

Data Sheet PG10340EJ01V0DS

µPG2137T5A

This product uses gallium arsenide (GaAs).

Caution GaAs Products

GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe

the following points.

• Follow related laws and ordinances when disposing of the product. If there are no applicable laws

and/or ordinances, dispose of the product as recommended below.

1. Commission a disposal company able to (with a license to) collect, transport and dispose of

materials that contain arsenic and other such industrial waste materials.

2. Exclude the product from general industrial waste and household garbage, and ensure that the

product is controlled (as industrial waste subject to special control) up until final disposal.

• Do not burn, destroy, cut, crush, or chemically dissolve the product.

• Do not lick the product or in any way allow it to enter the mouth.

For further information, please contact

NEC Compound Semiconductor Devices, Ltd.

5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 E-mail: salesinfo@csd-nec.com

NEC Compound Semiconductor Devices Hong Kong Limited

Hong Kong Head Office

Taipei Branch Office

Korea Branch Office

TEL: +852-3107-7303

TEL: +886-2-8712-0478 FAX: +886-2-2545-3859

TEL: +82-2-558-2120

FAX: +82-2-558-5209

http://www.ee.nec.de/

TEL: +49-211-6503-01 FAX: +49-211-6503-487

FAX: +852-3107-7309 E-mail: ncsd-hk@elhk.nec.com.hk

NEC Electronics (Europe) GmbH

California Eastern Laboratories, Inc.

http://www.cel.com/

TEL: +1-408-988-3500 FAX: +1-408-988-0279

0302-1


型号：	UPG2137T5A
厂家：	NEC
描述：	Narrow Band Low Power Amplifier, 893MHz Min, 960MHz Max, 3.30 X 2.30 MM, 0.60 MM HEIGHT, PLASTIC, TSON-16
文件：	总12页 (文件大小：88K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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