10T10AICW [NELLSEMI]
TRIACs, 10A Snubberless and Standard; 三端双向可控硅， 10A无缓冲器和标准
| 型号： | 10T10AICW |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | TRIACs, 10A Snubberless and Standard |
| 文件： | 总6页 (文件大小：287K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
RoHS
10T Series
SEMICONDUCTOR
TRIACs, 10A
Snubberless and Standard
MAIN FEATURES
SYMBOL
VALUE
UNIT
A2
IT(RMS)
10
A
VDRM/VRRM
IGT(Q1)
V
600 to 1000
25 to 50
mA
A1
A2
1
2
3
G
DESCRIPTION
TO-220AB (non-Insulated)
TO-220AB (lnsulated)
The 10T triac series is suitable for general purpose AC
switching. They can be used as an ON/OFF function in
applications such as static relays, heating regulation,
induction motor starting circuits... or for phase control
operation in light dimmers, motor speed controllers,...
(10TxxA)
(10TxxAI)
The snubberless version are specially recommended
for use on inductive loads, thanks to their high
commutation performances.
By using an internal ceramic pad, the 10T series provides
voltage insulated tab (rated at 2500VRMS) complying
with UL standards (File ref. :E320098)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUE
UNIT
Tc = 105ºC
TO-220AB
RMS on-state current (full sine wave)
IT(RMS)
A
10
Tc = 95ºC
t = 20 ms
t = 16.7 ms
TO-220AB insulated
F =50 Hz
100
105
50
Non repetitive surge peak on-state
ITSM
A
current (full cycle, T initial = 25°C)
j
F =60 Hz
I2t
I2t Value for fusing
A2s
t
= 10 ms
p
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
Tj =125ºC
Tj =125ºC
A/µs
F =100 Hz
50
dI/dt
Tp =20 µs
Tj =125ºC
Peak gate current
IGM
4
1
A
PG(AV)
Average gate power dissipation
Storage temperature range
Operating junction temperature range
W
Tstg
Tj
- 40 to + 150
- 40 to + 125
ºC
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Page 1 of 6
RoHS
RoHS
10T Series
SEMICONDUCTOR
(TJ= 25 ºC unless otherwise specified)
ELECTRICAL CHARACTERISTICS
SNUBBERLESS (3 quadrants)
10Txxxx
SYMBOL
TEST CONDITIONS
Unit
QUADRANT
BW
CW
(1)
I - II - III
I - II - III
IGT
MAX.
MAX.
35
mA
V
50
VD = 12 V, RL = 30Ω
VGT
1.3
0.2
VD = VDRM, RL = 3.3KΩ
Tj = 125°C
I - II - III
VGD
MIN.
MAX.
MAX.
V
(2)
35
IT = 500 mA
IH
mA
50
I - III
50
60
70
80
IG = 1.2 IGT
IL
mA
II
dV/dt(2)
MIN.
MIN.
500
5.5
VD = 67% VDRM, gate open, Tj = 125°C
Without snubber, Tj = 125°C
V/µs
1000
9
(dI/dt)c(2)
A/ms
ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified)
Standard (4 quadrants)
10Txxxx
TEST CONDITIONS
SYMBOL
UNIT
QUADRANT
C
B
25
50
50
I - II - III
(1)
IGT
MAX.
mA
VD = 12 V, RL = 30Ω
IV
100
VGT
VGD
1.3
0.2
V
V
ALL
ALL
VD = VDRM, RL = 3.3KΩ, Tj = 125°C
IT = 500 mA
(2)
mA
IH
MAX.
MAX.
25
50
I - III - IV
40
50
IL
IG = 1.2 IGT
mA
80
100
II
dV/dt(2)
VD = 67% VDRM, gate open, Tj = 125°C
V/µs
V/µs
MIN.
MIN.
200
5
400
10
(dV/dt)c(2)
(dI/dt)c = 4.4 A/ms,
Tj = 125°C
STATIC CHARACTERISTICS
SYMBOL
TEST CONDITIONS
UNIT
V
VALUE
1.55
0.85
40
(2)
ITM = 14 A, tP = 380 µs
Threshold voltage
Tj = 25°C
VTM
MAX.
MAX.
MAX.
(2)
Tj = 125°C
Vt0
V
(2)
Dynamic resistance
Rd
Tj = 125°C
Tj = 25°C
mΩ
µA
5
IDRM
IRRM
VDRM = VRRM
MAX.
Tj = 125°C
1
mA
Note 1: Minimum lGT is guaranted at 5% of lGT max.
Note 2: For both polarities of A2 referenced to A1.
www.nellsemi.com
Page 2 of 6
RoHS
RoHS
10T Series
SEMICONDUCTOR
THERMAL RESISTANCE
UNIT
SYMBOL
VALUE
TO-220AB
TO-220AB Insulated
TO-220AB
TO-220AB Insulated
1.5
2.4
Rth(j-c)
Rth(j-a)
Junction to case (AC)
°C/W
Junction to ambient
60
°C/W
PRODUCT SELECTOR
VOLTAGE (xx)
PART NUMBER
SENSITIVITY
TYPE
PACKAGE
TO-220AB
1000 V
600 V
800 V
V
V
V
V
V
V
V
V
V
V
V
V
50 mA
50 mA
25 mA
35 mA
Standard
Snubberless
Standard
10TxxA-B/10TxxAl-B
10TxxA-BW/10TxxAl-BW
10TxxA-C/10TxxAl-C
TO-220AB
TO-220AB
TO-220AB
Snubberless
10TxxA-CW/10TxxAl-CW
ORDERING INFORMATION
,
WEIGHT
2.0g
PACKAGE
DELIVERY MODE
ORDERING TYPE
MARKING
10TxxA-yy
10TxxAI-yy
BASE Q TY
10TxxA-yy
TO-220AB
50
50
Tube
Tube
10TxxAI-yy
TO-220AB (insulated)
2.3g
Note: xx = voltage, yy = sensitivity
ORDERING INFORMATION SCHEME
-
BW
10 T 06
A
Current
10 = 10A
Triac series
Voltage
06 = 600V
08 = 800V
10 = 1000V
Package type
A = TO-220AB (non-insulated)
AI = TO-220AB ( insulated)
I
Sensitivity
GT
B = 50mA Standard
C = 25mA Standard
BW = 50mA Standard
CW = 35mA Standard
www.nellsemi.com
Page 3 of 6
RoHS
RoHS
10T Series
SEMICONDUCTOR
Fig.1 Maximum power dissipation versus RMS on-state
current (full cycle)
Fig.2 RMS on-state current versus case temperature
(full cycle)
I
(A)
T(RMS)
P(W)
13
12
11
10
9
8
7
6
5
4
3
2
1
0
12
11
10
9
8
7
6
5
4
3
2
1
TO-220AB
TO-220AB
insulated
I
(A)
T(RMS)
T (°C)
c
0
0
25
50
75
100
125
4
5
6
8
9
0
1
2
3
7
10
Fig.4 On-state characteristics (maximum values)
Fig.3 Relative variation of thermal impedance
versus pulse duration
I
(A)
TM
K=[Z /R
th th
]
1E+0
1E-1
1E-2
100
10
1
T
max
=0.85V
=40mΩ
j
Z
th(j-c)
V
to
R
d
T =T max
j
j
Z
th(j-a)
T =25°C
j
tp(s)
V
(V)
TM
2.5
0.5
1.0
1.5
2.0
3.0
3.5
4.0
4.5
5.0
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
Fig.5 Surge peak on-state current versus number
of cycles
Fig.6 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10ms.
2
and corresponding value of l t
(A), I2t (A2s)
I
(A)
TSM
I
TSM
110
100
90
1000
Tj initial=25°C
t=20ms
80
70
60
Non repetitive
initial=25°C
I
One cycle
TSM
T
j
dl/dt limitation
50A/µs
100
10
50
40
30
20
10
0
l²t
Repetitive
=95°C
T
c
Number of cycles
t (ms)
p
0.01
0.10
1.00
10.00
1
10
100
1000
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Page 4 of 6
RoHS
RoHS
10T Series
SEMICONDUCTOR
Fig.8 Relative variation of critical rate of decrease
of main current versus (dV/dt)c (typical values)
Fig.7 Relative variation of gate trigger current,holding
current and latching current versus junction
temperature (typical values)
I
,I ,I [T ] / I ,I ,I [T =25°C ]
GT
H
L
j
GT
H
L
j
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.5
2.0
1.5
1.0
2.0
1.8
1.6
C
B
l
GT
1.4
1.2
1.0
BW/CW
I
&I
H
L
0.8
0.6
0.4
0.5
0.0
T (°C)
(dV/dt)c (V/µs)
j
0.1
1.0
10.0
100.0
-40
-20
0
20
40
60
80
100
120
140
Fig.9 Relative variation of critical rate of decrease of
main current versus junction temperature
(dI/dt)c [T ] / (dI/dt)c [T specified]
j
j
6
5
4
3
2
1
0
T (°C)
j
0
25
50
75
100
125
www.nellsemi.com
Page 5 of 6
RoHS
RoHS
10T Series
SEMICONDUCTOR
Case Style
TO-220AB
10.54 (0.415) MAX.
4.70 (0.185)
9.40 (0.370)
9.14 (0.360)
3.91 (0.154)
3.74 (0.148)
4.44 (0.1754)
1.39 (0.055)
1.14 (0.045)
2.87 (0.113)
2.62 (0.103)
RoHS
3.68 (0.145)
3.43 (0.135)
15.32 (0.603)
14.55 (0.573)
16.13 (0.635)
15.87 (0.625)
PIN
8.89 (0.350)
8.38 (0.330)
1
2
3
4.06 (0.160)
3.56 (0.140)
29.16 (1.148)
28.40 (1.118)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045)
14.22 (0.560)
13.46 (0.530)
2.67 (0.105)
2.41 (0.095)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
2.65 (0.104)
2.45 (0.096)
0.56 (0.022)
0.36 (0.014)
www.nellsemi.com
Page 6 of 6
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