12FT10G-S [NELLSEMI]
Sensitive and Standard SCRs, 12A; 敏感和标准的SCR ， 12A
| 型号： | 12FT10G-S |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | Sensitive and Standard SCRs, 12A |
| 文件： | 总7页 (文件大小：1115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
12PT Series RoHS
SEMICONDUCTOR
Sensitive and Standard SCRs, 12A
Main Features
2
Symbol
Value
12
Unit
2
IT(RMS)
A
2
1
VDRM/VRRM
IGT
V
600 to 1000
0.2 to 15
1
3
2
3
mA
TO-251 (I-PAK)
TO-252 (D-PAK)
(12PTxxF)
(12PTxxG)
2
DESCRIPTION
Available either in sensitive or standard gate
triggering levels, the 12A SCR series is suitable
to fit all modes of control found in applications
such as overvoltage crowbar protection, motor
control circuits in power tools and kitchen aids,
inrush current limiting circuits, capacitive
discharge ignition and voltage regulation circuits.
1
2
3
1
2
3
TO-220AB (Non-lnsulated)
TO-220AB (lnsulated)
(12PTxxAI)
(12PTxxA)
Available in through-hole or surface-mount
packages, they provide an optimized performance
in a limited space.
A2
2
(A2)
A1
A2
G
TO-263 (D2PAK)
(G)3
1(A1)
(12PTxxH)
ABSOLUTE MAXIMUM RATINGS
SYMBOL
TEST CONDITIONS
VALUE
UNIT
PARAMETER
TO-251/TO-252/TO-220AB/TO-263 Tc=105°C
RMS on-state current full sine wave
(180° conduction angle )
IT(RMS)
A
A
12
Tc=90°C
Tc=105°C
Tc=90°C
TO-220AB insulated
TO-251/TO-252/TO-220AB/TO-263
Average on-state current
(180° conduction angle)
IT(AV)
8
TO-220AB insulated
t = 20 ms
t = 16.7 ms
F =50 Hz
F =60 Hz
tp = 10 ms
140
145
98
Non repetitive surge peak on-state
ITSM
I2t
A
current (full cycle, T initial = 25°C)
j
I2t Value for fusing
A2s
A/µs
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
dI/dt
IGM
F = 60 Hz
Tj = 125ºC
Tj = 125ºC
50
4
Peak gate current
Tp = 20 µs
A
PG(AV)
Tstg
Tj
Average gate power dissipation
Storage temperature range
Tj =125ºC
W
1
- 40 to + 150
ºC
Operating junction temperature range
- 40 to + 125
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Page 1 of 7
RoHS
12PT Series RoHS
SEMICONDUCTOR
STANDARD ELECTRICAL SPECIFICATIONS
(TJ = 25 ºC, unless otherwise specified)
12PTxxxx
SYMBOL
Unit
TEST CONDITIONS
T
-
2
Min.
Max.
Max.
0.5
5
IGT
mA
15
VD = 12 V, RL = 33Ω
VGT
V
V
1.3
0.2
VGD
IH
VD = VDRM, RL = 3.3KΩ
IT = 500 mA, gate open
IG = 1.2 IGT
Tj = 125°C
Min.
Max.
mA
mA
30
60
15
30
40
Max.
IL
dV/dt
VTM
VD = 67% VDRM gate open
,
Tj = 125°C
Tj = 25°C
Min.
Max.
Max.
200
V/µs
V
1.6
ITM = 24A, tP = 380 µs
Vto
Rd
0.85
V
Threshold voltage
Dynamic resistance
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
mΩ
µA
mA
30
5
Max.
Max.
IDRM
IRRM
VDRM = VRRM
2
(T
SENSITIVE ELECTRICAL CHARACTERISTICS
j = 25 ºC, unless otherwise specified)
SYMBOL
Unit
TEST CONDITIONS
12PTxxxx-S
IGT
Max.
Max.
Min.
200
0.8
µA
VD = 12 V, RL = 140Ω
VGT
V
V
VGD
VD = VDRM, RL = 3.3KΩ, RGK=220Ω
IRG = 10 µA
Tj = 125°C
0.1
8
VRG
IH
V
Min.
5
IT = 50 mA, RGK = 1 KΩ
IG = 1 mA, RGK = 1 KΩ
Max.
mA
mA
IL
Max.
Min.
Max.
6
Tj = 125°C
Tj = 25°C
dV/dt
VTM
VD = 67% VDRM RGK = 220Ω
,
V/µs
V
5
ITM = 24A, tP = 380 µs
1.6
Tj = 125°C
Tj = 125°C
Max.
Max.
V
Threshold voltage
Dynamic resistance
Vto
Rd
0.85
mΩ
µA
30
5
IDRM
IRRM
Tj = 25°C
Max.
VDRM = VRRM, RGK = 220Ω
mA
Tj = 125°C
2
THERMAL RESISTANCE
SYMBOL
Parameter
VALUE
UNIT
1.3
IPAK/DPAK/TO-220AB/TO-263
TO-220AB insulated
Rth(j-c)
Junction to case (DC)
°C/W
4.6
70
S = 0.5 cm2
S = 1 cm2
D-PAK
Junction to ambient (DC)
D²PAK
45
Rth(j-a)
°C/W
100
I-PAK
TO-220AB, TO-220AB insulated
60
S=Copper surface under tab
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Page 2 of 7
RoHS
12PT Series RoHS
SEMICONDUCTOR
PRODUCT SELECTOR
VOLTAGE (xx)
PART NUMBER
PACKAGE
SENSITIVITY
600 V
800 V
1000 V
200 µA
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
12PTxxA-S/12PTxxAl-S
12PTxxA-T/12PTxxAl-T
12PTxxA/12PTxxAl
12PTxxF-S
TO-220AB
TO-220AB
0.5~5 mA
2~15 mA
V
V
TO-220AB
I-PAK
200 µA
0.5~5 mA
2~15 mA
200 µA
V
V
V
V
V
12PTxxF-T
I-PAK
I-PAK
12PTxxF
12PTxxG-S
12PTxxG-T
D-PAK
D-PAK
D-PAK
D²-PAK
V
V
0.5~5 mA
2~15 mA
V
V
12PTxxG
20 µA
12PTxxH-S
V
V
0.5~5 mA
2~15 mA
D²-PAK
D²-PAK
12PTxxH-T
12PTxxH
V
V
V
V
V
V
ORDERING INFORMATION
,
WEIGHT
2.0g
PACKAGE
DELIVERY MODE
ORDERING TYPE
12PTxxA-y
MARKING
12PTxxA-y
BASE Q TY
TO-220AB
50
50
Tube
Tube
12PTxxAI-y
12PTxxAI-y
TO-220AB (insulated)
2.3g
12PTxxF-y
12PTxxG-y
12PTxxF-y
12PTxxG-y
0.40g
0.38g
TO-251(I-PAK)
TO-252(D-PAK)
80
80
Tube
Tube
2.0g
12PTxxH-y
12PTxxH-y
TO-263(D²-PAK)
Tube
50
Note: xx = voltage, y = sensitivity
ORDERING INFORMATION SCHEME
-
S
12 PT 06
Current
12 = 12A, IT(RMS)
SCR series
Voltage Code
06 = 600V
08 = 800V
10 = 1000V
Package type
A = TO-220AB (non-insulated)
AI = TO-220AB ( insulated)
F = TO-251 (I-PAK)
G = TO-252 (D-PAK)
H = TO-263 (D²PAK)
IGT Sensitivity
S = 70~200 µA
T = 0.5~5 mA
Blank = 2~15 mA
www.nellsemi.com
Page 3 of 7
RoHS
12PT Series RoHS
SEMICONDUCTOR
Fig.1 Maximum average power dissipation versus
average on-state current
Fig.2 Average and DC on-state current versus
case temperature
IT(AV)(A)
P(W)
14
12
12
DC
11 α=180°
10
9
TO-251/TO-252
TO-263/TO-220AB
10
8
8
α=180°
7
6
5
4
6
TO-220AB
Insulated
4
2
0
360°
3
2
1
0
T
(°C)
75
IT(AV)(A)
4
α
case
0
1
2
0
25
50
100
125
3
5
6
7
8
9
Fig.4 Relative variation of thermal impedance
junction to case versus pulse duration
Fig.3 Average and DC on-state current versus
ambient temperature (DPAK)
IT(AV)(A)
K=[Zth(j-c)/Rth(j-c)]
3.0
2.5
1.0
Device mounted on FR4 with
Recommended pad layout
DC
0.5
D²PAK
2.0
1.5
1.0
α=180°
DPAK
0.2
0.1
0.5
0.0
t
(s)
p
T
(°C)
amb
0
25
50
75
100
125
1E+3
1E+2
1E+1
1E+0
Fig.5 Relative variation of thermal impedance
Junction to ambient versus pulse duration
(DANK)
Fig.6 Relative variation of gate trigger and
holding current versus junction
temperature for IGT=200µA
K=[Zth(j-a)/Rth(j-a)]
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
1.00
2.0
Device mounted on FR4 with
Recommended pad layout
1.8
1.6
IGT
DPAK
1.4
1.2
D²PAK
1.0
0.8
0.6
0.4
0.2
0.0
0.10
l
& IL
=1KΩ
GK
H
TO-220AB/IPAK
R
T (°C)
j
t
(s)
p
0.01
1E-2
-40 -20
0
20
40
60
80 100 120 140
1E-1
1E+0
1E+1
1E+2 5E+2
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Page 4 of 7
RoHS
12PT Series RoHS
SEMICONDUCTOR
Fig.8 Relative variation of holding current
versus gate-cathode resistance
(typical values)
Fig.7 Relative variation of gate trigger and
holding current versus junction
temperature
IH[RGK] / IH[RGK=1KΩ]
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
5.0
2.4
2.2
Tj=25°C
200µA Series
4.5
4.0
3.5
3.0
5mA & 15mA Series
2.0
1.8
1.6
1.4
1.2
IGT
2.5
2.0
1.5
1.0
0.8
0.6
0.4
0.2
0.0
l
& IL
H
1.0
0.5
0.0
T (°C)
j
R
(KΩ)
GK
-40 -20
0
20
40
60
80 100 120 140
1E-1
1E+0
1E+1
1E-2
Fig.9 Relative variation of dV/dt immunity
versus gate-cathode resistance
(Typical values)
Fig.10 Relative variation of dV/dt immunity
versus gate-cathode capacitance
(typical values) for IGT=200µA
dV/dt[RGK] / dV/dt[RGK=220Ω]
dV/dt[CGK] / dV/dt[RGK=220Ω]
10.0
4.0
VD=0.67 X VDRM
Tj=125°C
RGK=220Ω
Tj=125°C
VD=0.67 X VDRM
3.5
3.0
2.5
2.0
1.5
1.0
1.0
0.5
0.0
R
(KΩ)
CGK(nF)
GK
0.1
0
25
50
75
100
125
150
0
200
400
600
800
1000
1200
Fig.11 Surge peak on-state current versus
number of cycles
Fig.12 Non-repetitive surge peak on-state current
and corresponding values of l²t versus
sinusoidal pulse width
ISTM(A)
ITSM(A),I²t(A²s)
150
140
130
2000
Tj inital=25°C
ITSM
1000
tp=10ms
One cycle
120
110
100
90
80
70
60
50
40
30
20
Non repetitive
initial=25°C
dI/dt Iimitation
T
j
100
I²t
Repetitive
Tc=105°C
t
(ms)
10
0
Number of cycles
100
p
10
1
10
1000
0.01
0.10
1.00
10.00
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Page 5 of 7
RoHS
12PT Series RoHS
SEMICONDUCTOR
Fig.14 Thermal resistance junction to ambient
versus copper surface under tab (D²PAK)
Fig.13 On-state characteristics (maximum
values)
ITM(A)
Rth(j-a)(°C/W)
100
200
Tjmax
Vt0=0.85V
Rd=30mΩ
Epoxy printed circuit board FR4
100
copper thickness = 35µm
80
60
Tj=max
DPAK
10
1
40
Tj=25°C
D²PAK
20
S(cm²)
VTM(V)
0.0 0.5 1.0 1.5 2.0 2.5
0
0
2
4
6
8
10 12 14 16 18 20
4.0
4.5
5.0
3.0 3.5
Case Style
TO-220AB
10.54 (0.415) MAX.
4.70 (0.185)
9.40 (0.370)
9.14 (0.360)
3.91 (0.154)
3.74 (0.148)
4.44 (0.1754)
1.39 (0.055)
1.14 (0.045)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
15.32 (0.603)
14.55 (0.573)
16.13 (0.635)
15.87 (0.625)
PIN
2
8.89 (0.350)
8.38 (0.330)
1
3
4.06 (0.160)
3.56 (0.140)
29.16 (1.148)
28.40 (1.118)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045)
14.22 (0.560)
13.46 (0.530)
2.67 (0.105)
2.41 (0.095)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
2.65 (0.104)
2.45 (0.096)
0.56 (0.022)
0.36 (0.014)
TO-251
(I-PAK)
6.6(0.26)
6.4(0.52)
2.4(0.095)
2.2(0.086)
1.5(0.059)
0.62(0.024)
0.48(0.019)
5.4(0.212)
5.2(0.204)
1.37(0.054)
6.2(0.244)
6(0.236)
4T
16.3(0.641)
15.9(0.626)
1.9(0.075)
1.8(0.071)
9.4(0.37)
9(0.354)
0.85(0.033)
0.65(0.026)
0.55(0.021)
0.76(0.03)
4.6(0.181)
4.4(0.173)
0.62(0.024)
0.45(0.017)
2
(A2)
(G)3
1(A1)
www.nellsemi.com
Page 6 of 7
RoHS
12PT Series RoHS
SEMICONDUCTOR
Case Style
TO-252
(D-PAK)
2.4(0.095)
2.2(0.086)
6.6(0.259)
6.4(0.251)
1.5(0.059)
5.4(0.212)
5.2(0.204)
0.62(0.024)
0.48(0.019)
1.37(0.054)
2
6.2(0.244)
6(0.236)
9.35(0.368)
10.1(0.397)
1
2
3
0.89(0.035)
0.64(0.025)
0.62(0.024)
0.45(0.017)
1.14(0.045)
0.76(0.030)
2.28(0.090)
4.57(0.180)
TO-263(D2PAK)
RoHS
10.45 (0.411)
9.65 (0.380)
4.83 (0.190)
4.06 (0.160)
1.40 (0.055)
1.14 (0.045)
6.22 (0.245)
1.40 (0.055)
9.14 (0.360)
8.13 (0.320)
1.19 (0.047)
15.85 (0.624)
15.00 (0.591)
0 to 0.254 (0 to 0.01)
2.79 (0.110)
2.29 (0.090)
0.940 (0.037)
0.686 (0.027)
0.53 (0.021)
0.36 (0.014)
2.67 (0.105)
2.41 (0.095)
3.56 (0.140)
2.79 (0.110)
5.20 (0.205)
4.95 (0.195)
2
(A2)
(G)3
1(A1)
www.nellsemi.com
Page 7 of 7
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