1PT06E-T [NELLSEMI]

Sensitive gate SCRs, 1A; 敏感栅可控硅， 1A


型号：	1PT06E-T
厂家：	NELL SEMICONDUCTOR CO., LTD
描述：	Sensitive gate SCRs, 1A 敏感栅可控硅， 1A 可控硅栅
文件：	总4页 (文件大小：189K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

RoHS

1PT Series

SEMICONDUCTOR

Sensitive gate SCRs, 1A

Main Features

Symbol

Value

Unit

I_T(RMS)

V_DRM/V_RRM

I_GT

600 to 800

40 to 200

µA

DESCRIPTION

Thanks to highly sensitive triggering levels, the 1PT

series is suitable for all applications where the available

gate current is limited, such as capacitive discharge

TO-92

ignitions, motor control in kitchen aids, overvoltage

crowbar protection in low power supplies among others.

(1PTxxE)

(A2)

Available in through-hole or surface-mount packages,

they provide an optimized performance in a limited

space area.

(G)3

1(A1)

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUE

UNIT

RMS on-state current full sine wave

(180° conduction angle )

I_T(RMS)

T_c=85ºC

Average on-state current

(180° conduction angle)

I_T(AV)

0.6

F =50 Hz

F =60 Hz

t = 20 ms

t = 16.7 ms

t_p= 10 ms

Non repetitive surge peak on-state

I_TSM

current (full cycle, T initial = 25°C)

I²t Value for fusing

A²s

A/µs

I²t

0.72

Critical rate of rise of on-state current

I_G= 2xl_GT, t_r≤100ns

dI/dt

F = 60 Hz

T_p= 20 µs

T_j= 110ºC

I_GM

P_GM

0.5

Peak gate current

T_A=25°C, Pulse width≤0.1µs

Forward peak gate power

Average gate power dissipation

Repetitive peak off-state voltage

P_G(AV)

V_DRM

V_RRM

T_stg

T_j=110ºC

0.1

T_j=25ºC

600 and 800

Repetitive peak reverse voltage

Storage temperature range

- 40 to + 150

- 40 to + 110

ºC

T_j

Operating junction temperature range

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Page 1 of 6

RoHS

1PT Series

SEMICONDUCTOR

ELECTRICAL SPECIFICATIONS

(T_J= 25 ºC unless otherwise specified)

1PTxxxx

SYMBOL

Unit

TEST CONDITIONS

200

0.8

Min.

Max.

I_GT

µA

V_D= 12V, R_L= 100Ω

V_GT

V_D= V_DRM, R_L= 3.3KΩ

R_GK= 1KΩ, T_j= 110°C

V_GD

Min.

0.2

I_H

I_L

I_T= 50mA, R_GK= 1KΩ

I_G= 1mA, R_GK= 1KΩ

Max.

Min.

V/µs

V_D= 67% V_DRMR_GK= 1KΩ, T_j= 110°C

dV/dt

V_TM

Min.

Max.

1.6

T_j= 25°C

T_j= 110°C

I_T= 1A, t_P= 380 µs

µA

I_DRM

I_RRM

V_D=V_DRM, V_R=V_RRM

R_GK= 220Ω

Max.

0.1

Threshold voltage

Dynamic resistance

T_j= 110°C

0.85

MΩ

THERMAL RESISTANCE

SYMBOL

Parameter

VALUE

UNIT

°C/W

R_th(j-c)

R_th(j-a)

Junction to case (AC)

TO-92

Junction to ambient (DC)

150

PRODUCT SELECTOR

VOLTAGE (xx)

PART NUMBER

SENSITIVITY

PACKAGE

800 V

600 V

10~30 µA

20~50 µA

30~60 µA

50~80 µA

70~200 µA

TO-92

1PTxxE03

1PTxxE-05

1PTxxE-06

TO-92

1PTxxE-08

1PTxxE-S

ORDERING INFORMATION

WEIGHT

PACKAGE

DELIVERY MODE

ORDERING TYPE

1PTxxE-yy

MARKING

1PTxxE-yy

BASE Q TY

0.23g

TO-92

500

Bag

Note: xx = voltage, y = sensitivity

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Page 2 of 6

RoHS

1PT Series

SEMICONDUCTOR

ORDERING INFORMATION SCHEME

1 PT 06

Current

1 = 1A, I_T(RMS)

SCR series

Voltage Code

06 = 600V

08 = 800V

Package type

E = TO-92

IGT Sensitivity

03 = 10~30 µA

05 = 20~50 µA

06 = 30~60 µA

08 = 50~80 µA

S = 70~200 µA

Fig.1 Maximum power dissipation versus RMS

on-state current (full cycle)

Fig.2 RMS on-state current versus case

temperature (full cycle)

I_T(RMS)(A)

P(W)

1.0

0.8

0.6

0.4

0.2

I_T(RMS)(A)

T_C(°C)

0.2

0.4

0.6

0.8

1.0

100

125

Fig.4 Surge peak on-state current versus number

of cycles

Fig.3 On-state characteristics (maximum values)

I_TM(A), I²t(A²s)

I_TSM(A)

t=10ms

Half cycle

Tjmax

Vto=0.85V

Rd=60mΩ

Non repetltlve

Tj lntla=25°C

1.0

Tj=Tjmax

Tj=25°C

(V)

Number of cycles

0.1

1000

0.5

1.0

1.5

2.0

2.5

100

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Page 3 of 6

RoHS

1PT Series

SEMICONDUCTOR

Fig.5 Non-repetitive surge peak on-state current

for a sinusoidal pulse with width tp<10ms,

and corresponding value of l²t

Fig.6 Relative variation of gate trigger current,

holding current and latching current

versus junction temperature (typical values)

IGT,IH,IL[T]/IGT,IH,IL[T]=25°C

(A), I²t (A²s)

TSM

6.0

5.0

100

Tj lntlal=25°C

dl/dt≤50A/μS

4.0

3.0

2.0

l_GT

I_TSM

IH&IL

Tj(°C)

1.0

0.0

t=10ms

Half cycle

0.01

0.1

1.0

10.0

-40 -20

80 100 120 140

Case Style

TO-92

RoHS

^Ø5.20(0.205)

4.45(0.175)

5.33(0.210)

4.58(0.180)

0.50(0.020)

0.40(0.016)

12.70(0.500)Min.

0.50(0.020)

0.40(0.016)

0.50(0.020)

0.40(0.016)

1.40(0.055)

1.14(0.045)

1.40(0.055)

1.14(0.045)

4.20(0.165)

3.20(0.126)

Page 4 of 6

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