20T10A-CW [NELLSEMI]
TRIACs, 20A Sunbberless; 三端双向可控硅, 20A Sunbberless型号: | 20T10A-CW |
厂家: | NELL SEMICONDUCTOR CO., LTD |
描述: | TRIACs, 20A Sunbberless |
文件: | 总5页 (文件大小:1171K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RoHS
20T Series RoHS
SEMICONDUCTOR
TRIACs, 20A
Sunbberless
FEATURES
Medium current triac
A2
Low thermal resistance with clip bonding
Low thermal resistance insulation ceramic
for insulated TO-220AB & TO-3P package
1
2
3
A1
A2
Clip assembly
20T series are UL certified (File ref: E320098)
Packages are RoHS compliant
G
TO-220AB (non-Insulated)
TO-220AB (lnsulated)
(20TxxA)
(20TxxAI)
APPLICATIONS
A2
The snubberless concept offer suppression of RC
network and it is suitable for applications such as
phase control and static switching on inductive or
resistive load.
Due to their clip assembly techinque, they provide
a superior performance in surge current handling
capabilities.
1
2
G
A1
A2
G
By using an internal ceramic pad, the 20T series
provides voltage insulated tab (rated at 2500VRMS)
complying with UL standards.
TO-3P (non-Insulated)
TO-3P (Insulated)
(20TxxB)
(20TxxBI)
A2
MAIN FEATURES
SYMBOL
VALUE
UNIT
A
A1
A2
IT(RMS)
G
20
TO-263 (D2PAK)
VDRM/VRRM
IGT(Q1)
V
600 to 1000
35 to 50
(20TxxH)
mA
ABSOLUTE MAXIMUM RATINGS
VALUE
UNIT
PARAMETER
SYMBOL
TEST CONDITIONS
Tc = 90ºC
TO-263/TO-220AB/TO-3P
RMS on-state current (full sine wave)
IT(RMS)
A
20
Tc = 70ºC
t = 20 ms
t = 16.7 ms
TO-220AB insulated/TO-3P insulated
F =50 Hz
F =60 Hz
200
210
200
Non repetitive surge peak on-state
ITSM
A
current (full cycle, T initial = 25°C)
j
I2t
I2t Value for fusing
A2s
t
= 10 ms
p
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
Tj =125ºC
Tj =125ºC
A/µs
F =100 Hz
50
dI/dt
Tp =20 µs
Tj =125ºC
Tj =125ºC
Peak gate current
IGM
4
A
PGM
10
Peak gate power dissipation (tp = 20µs)
W
PG(AV)
Average gate power dissipation
1
Tstg
Tj
Storage temperature range
- 40 to + 150
- 40 to + 125
ºC
Operating junction temperature range
www.nellsemi.com
Page 1 of 5
RoHS
20T Series RoHS
SEMICONDUCTOR
ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified)
SNUBBERLESS (3 quadrants)
20Txxxx
QUADRANT
SYMBOL
TEST CONDITIONS
Unit
BW
CW
(1)
50
35
IGT
I - II - III
I - II - III
MAX.
MAX.
mA
V
VD = 12 V, RL = 33Ω
VGT
1.5
0.2
VD = VDRM, RL = 3.3KΩ
Tj = 125°C
VGD
MIN.
MAX.
MAX.
I - II - III
V
(2)
60
IT = 500 mA
40
IH
mA
70
80
I - III
50
60
IG = 1.2 IGT
IL
mA
II
dV/dt(2)
MIN.
MIN.
250
11
500
18
VD = 67% VDRM gate open ,Tj = 125°C
,
V/µs
(dI/dt)c(2)
(dV/dt)c = 20 A/ms, Tj = 125°C
A/ms
STATIC CHARACTERISTICS
SYMBOL
TEST CONDITIONS
UNIT
V
VALUE
(2)
ITM = 28 A, tP = 380 µs
Threshold voltage
Tj = 25°C
VTM
1.55
1.04
20
MAX.
(2)
Tj = 125°C
Vt0
V
MAX.
MAX.
(2)
Dynamic resistance
Rd
Tj = 125°C
Tj = 25°C
mΩ
µA
5
IDRM
IRRM
VD = VDRM
VR = VRRM
MAX.
Tj = 125°C
2.5
mA
Note 1: Minimum lGT is guaranted at 5% of lGT max.
Note 2: For both polarities of A2 referenced to A1.
THERMAL RESISTANCE
UNIT
SYMBOL
VALUE
TO-220AB, TO-263, TO-3P
TO-220AB Insulated, TO-3P Insulated
TO-263
1.3
2.1
45
Rth(j-c)
Junction to case (AC)
S = 1 cm2
°C/W
Rth(j-a)
TO-220AB Insulated, TO-220AB
Junction to ambient
60
TO-3P, TO-3P Insulated
S = Copper surface under tab.
PRODUCT SELECTOR
VOLTAGE (xx)
PART NUMBER
SENSITIVITY
TYPE
PACKAGE
1000 V
600 V
800 V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
35 mA
50 mA
35 mA
50 mA
35 mA
50 mA
Snubberless
Snubberless
Snubberless
Snubberless
Snubberless
Snubberless
TO-220AB
TO-220AB
TO-3P
20TxxA-CW/20TxxAl-CW
20TxxA-BW/20TxxAl-BW
20TxxB-CW/20TxxBl-CW
20TxxB-BW/20TxxBl-BW
20TxxH-CW
TO-3P
D2PAK
D2PAK
20TxxH-BW
AI: Insulated TO-220AB package
BI: Insulated TO-3P package
www.nellsemi.com
Page 2 of 5
RoHS
20T Series RoHS
SEMICONDUCTOR
ORDERING INFORMATION
,
WEIGHT
2.0g
PACKAGE
DELIVERY MODE
ORDERING TYPE
MARKING
BASE Q TY
20TxxA-yy
20TxxA-yy
20TxxAI-yy
TO-220AB
50
50
Tube
Tube
20TxxAI-yy
TO-220AB (insulated)
2.3g
20TxxB-yy
20TxxBI-yy
20TxxB-yy
20TxxBI-yy
4.3g
4.8g
TO-3P
30
30
Tube
Tube
TO-3P (insulated)
TO-263(D2PAK)
50
Tube
20TxxH-yy
20TxxH-yy
2.0g
Note: xx = voltage, yy = sensitivity
ORDERING INFORMATION SCHEME
-
BW
20 T 06
A
Current
20 = 20A
Triac series
Voltage
06 = 600V
08 = 800V
10 = 1000V
Package type
A = TO-220AB (non-insulated)
AI = TO-220AB ( insulated)
B = TO-3P (non-insulated)
BI = TO-3P (insulated)
H = TO-263 (D2PAK)
I
GT
Sensitivity
BW = 50mA Snubberless
CW = 35mA Snubberless
Fig.1 Maximum power dissipation versus RMS on-state
current (full cycle)
Fig.2 Correlation between maximun RMS
power dissipation and maximum allowable
temperatures (Tamb and Tcase) for different
thermal resistances heatsink + contact
P (W)
P (W)
Tcase (°C)
30
30
25
20
15
65
75
R
=0°C/W
th
R
25
20
15
=0.5°C/W
th
α =180°
85
α =120°
95
R
=1.5°C/W
th
α =90°
α =60°
105
10
5
R
=1°C/W
10
5
th
180°
α
α =30°
115
125
IT(RMS)(A)
α
Tamb(°C)
0
0
10
5
15
20
0
20
40
60
80
100
120
0
www.nellsemi.com
Page 3 of 5
RoHS
20T Series RoHS
SEMICONDUCTOR
Fig.3 RMS on-state current versus case temperature
(full cycle)
Fig.4 Relative variation of thermal impedance
versus pulse duration.
IT(RMS) (A)
K=[Zth/Rth]
1
25
20
15
10
5
α =180°
Z
th(j-c)
TO-220AB
TO-263
TO-3P
Z
th(j-a)
TO-220AB(insulated)
TO-3P(insulated)
0.1
Tc(°C)
0
tp(s)
1E+0
0.01
0
10 20 30 40 50 60 70 80 90 100 110 120 130
1E-3
1E-2
1E-1
1E+1
1E+2 5E+2
Fig.6 Surge peak on-state current versus number
of cycles.
Fig.5 On-state characteristics (maximum values).
I
(A)
T max.
ITSM (A)
1000
100
1000
j
V
R
= 1.04V
= 20Ωm
to
d
t=20ms
Non repetitive
T initial=25°C
One cycle
T =T max
j
j
j
10
1
T =25°C
j
VTM(V)
Number of cycles
100
1
10
100
1000
1
2
3
4
5
Fig.7 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10ms.
and corresponding value of l2t.
Fig.8 Relative variation of gate trigger current and
holding current versus junction temperature.
lTSM (A), l2t(A2s)
lGT,lH,lL[Tj] / lGT,lH,lL [Tj=25°C]
1000
2.5
2.0
1.5
1.0
T initial=25°C
j
I
TSM
I
GT
I
H
& I
L
I2t
0.5
0.0
tp(ms)
Tj(°C)
100
0.01
-40 -30 -20 -10
0
10 20 30 40 50 60 70 80 90 100 110120 130
0.10
1.00
10.00
www.nellsemi.com
Page 4 of 5
RoHS
20T Series RoHS
SEMICONDUCTOR
Case Style
TO-220AB
10.54 (0.415) MAX.
4.70 (0.185)
4.44 (0.1754)
1.39 (0.055)
1.14 (0.045)
9.40 (0.370)
9.14 (0.360)
3.91 (0.154)
3.74 (0.148)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
15.32 (0.603)
14.55 (0.573)
16.13 (0.635)
15.87 (0.625)
PIN
8.89 (0.350)
8.38 (0.330)
1
2
3
4.06 (0.160)
3.56 (0.140)
29.16 (1.148)
28.40 (1.118)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045)
14.22 (0.560)
13.46 (0.530)
2.67 (0.105)
2.41 (0.095)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
2.65 (0.104)
2.45 (0.096)
0.56 (0.022)
0.36 (0.014)
TO-263(D2PAK)
10.45 (0.411)
9.65 (0.380)
4.83 (0.190)
4.06 (0.160)
1.40 (0.055)
1.14 (0.045)
6.22 (0.245)
1.40 (0.055)
1.19 (0.047)
9.14 (0.360)
8.13 (0.320)
15.85 (0.624)
15.00 (0.591)
0 to 0.254 (0 to 0.01)
2.79 (0.110)
2.29 (0.090)
0.940 (0.037)
0.686 (0.027)
0.53 (0.021)
0.36 (0.014)
2.67 (0.105)
2.41 (0.095)
3.56 (0.140)
2.79 (0.110)
5.20 (0.205)
4.95 (0.195)
TO-3P
www.nellsemi.com
Page 5 of 5
相关型号:
SI9130DB
5- and 3.3-V Step-Down Synchronous ConvertersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1-E3
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135_11
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明