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20T10BI-CW [NELLSEMI]

TRIACs, 20A Sunbberless; 三端双向可控硅， 20A Sunbberless
20T10BI-CW
型号： 20T10BI-CW
厂家： NELL SEMICONDUCTOR CO., LTD    NELL SEMICONDUCTOR CO., LTD
描述：

TRIACs, 20A Sunbberless
三端双向可控硅， 20A Sunbberless

可控硅 三端双向交流开关
文件： 总5页 (文件大小：1171K)
中文：  中文翻译
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RoHS  
20T Series RoHS  
SEMICONDUCTOR  
TRIACs, 20A  
Sunbberless  
FEATURES  
Medium current triac  
A2  
Low thermal resistance with clip bonding  
Low thermal resistance insulation ceramic  
for insulated TO-220AB & TO-3P package  
1
2
3
A1  
A2  
Clip assembly  
20T series are UL certified (File ref: E320098)  
Packages are RoHS compliant  
G
TO-220AB (non-Insulated)  
TO-220AB (lnsulated)  
(20TxxA)  
(20TxxAI)  
APPLICATIONS  
A2  
The snubberless concept offer suppression of RC  
network and it is suitable for applications such as  
phase control and static switching on inductive or  
resistive load.  
Due to their clip assembly techinque, they provide  
a superior performance in surge current handling  
capabilities.  
1
2
G
A1  
A2  
G
By using an internal ceramic pad, the 20T series  
provides voltage insulated tab (rated at 2500VRMS)  
complying with UL standards.  
TO-3P (non-Insulated)  
TO-3P (Insulated)  
(20TxxB)  
(20TxxBI)  
A2  
MAIN FEATURES  
SYMBOL  
VALUE  
UNIT  
A
A1  
A2  
IT(RMS)  
G
20  
TO-263 (D2PAK)  
VDRM/VRRM  
IGT(Q1)  
V
600 to 1000  
35 to 50  
(20TxxH)  
mA  
ABSOLUTE MAXIMUM RATINGS  
VALUE  
UNIT  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
Tc = 90ºC  
TO-263/TO-220AB/TO-3P  
RMS on-state current (full sine wave)  
IT(RMS)  
A
20  
Tc = 70ºC  
t = 20 ms  
t = 16.7 ms  
TO-220AB insulated/TO-3P insulated  
F =50 Hz  
F =60 Hz  
200  
210  
200  
Non repetitive surge peak on-state  
ITSM  
A
current (full cycle, T initial = 25°C)  
j
I2t  
I2t Value for fusing  
A2s  
t
= 10 ms  
p
Critical rate of rise of on-state current  
IG = 2xlGT, tr≤100ns  
Tj =125ºC  
Tj =125ºC  
A/µs  
F =100 Hz  
50  
dI/dt  
Tp =20 µs  
Tj =125ºC  
Tj =125ºC  
Peak gate current  
IGM  
4
A
PGM  
10  
Peak gate power dissipation (tp = 20µs)  
W
PG(AV)  
Average gate power dissipation  
1
Tstg  
Tj  
Storage temperature range  
- 40 to + 150  
- 40 to + 125  
ºC  
Operating junction temperature range  
www.nellsemi.com  
Page 1 of 5  
RoHS  
20T Series RoHS  
SEMICONDUCTOR  
ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified)  
SNUBBERLESS (3 quadrants)  
20Txxxx  
QUADRANT  
SYMBOL  
TEST CONDITIONS  
Unit  
BW  
CW  
(1)  
50  
35  
IGT  
I - II - III  
I - II - III  
MAX.  
MAX.  
mA  
V
VD = 12 V, RL = 33Ω  
VGT  
1.5  
0.2  
VD = VDRM, RL = 3.3KΩ  
Tj = 125°C  
VGD  
MIN.  
MAX.  
MAX.  
I - II - III  
V
(2)  
60  
IT = 500 mA  
40  
IH  
mA  
70  
80  
I - III  
50  
60  
IG = 1.2 IGT  
IL  
mA  
II  
dV/dt(2)  
MIN.  
MIN.  
250  
11  
500  
18  
VD = 67% VDRM gate open ,Tj = 125°C  
,
V/µs  
(dI/dt)c(2)  
(dV/dt)c = 20 A/ms, Tj = 125°C  
A/ms  
STATIC CHARACTERISTICS  
SYMBOL  
TEST CONDITIONS  
UNIT  
V
VALUE  
(2)  
ITM = 28 A, tP = 380 µs  
Threshold voltage  
Tj = 25°C  
VTM  
1.55  
1.04  
20  
MAX.  
(2)  
Tj = 125°C  
Vt0  
V
MAX.  
MAX.  
(2)  
Dynamic resistance  
Rd  
Tj = 125°C  
Tj = 25°C  
mΩ  
µA  
5
IDRM  
IRRM  
VD = VDRM  
VR = VRRM  
MAX.  
Tj = 125°C  
2.5  
mA  
Note 1: Minimum lGT is guaranted at 5% of lGT max.  
Note 2: For both polarities of A2 referenced to A1.  
THERMAL RESISTANCE  
UNIT  
SYMBOL  
VALUE  
TO-220AB, TO-263, TO-3P  
TO-220AB Insulated, TO-3P Insulated  
TO-263  
1.3  
2.1  
45  
Rth(j-c)  
Junction to case (AC)  
S = 1 cm2  
°C/W  
Rth(j-a)  
TO-220AB Insulated, TO-220AB  
Junction to ambient  
60  
TO-3P, TO-3P Insulated  
S = Copper surface under tab.  
PRODUCT SELECTOR  
VOLTAGE (xx)  
PART NUMBER  
SENSITIVITY  
TYPE  
PACKAGE  
1000 V  
600 V  
800 V  
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
35 mA  
50 mA  
35 mA  
50 mA  
35 mA  
50 mA  
Snubberless  
Snubberless  
Snubberless  
Snubberless  
Snubberless  
Snubberless  
TO-220AB  
TO-220AB  
TO-3P  
20TxxA-CW/20TxxAl-CW  
20TxxA-BW/20TxxAl-BW  
20TxxB-CW/20TxxBl-CW  
20TxxB-BW/20TxxBl-BW  
20TxxH-CW  
TO-3P  
D2PAK  
D2PAK  
20TxxH-BW  
AI: Insulated TO-220AB package  
BI: Insulated TO-3P package  
www.nellsemi.com  
Page 2 of 5  
RoHS  
20T Series RoHS  
SEMICONDUCTOR  
ORDERING INFORMATION  
,
WEIGHT  
2.0g  
PACKAGE  
DELIVERY MODE  
ORDERING TYPE  
MARKING  
BASE Q TY  
20TxxA-yy  
20TxxA-yy  
20TxxAI-yy  
TO-220AB  
50  
50  
Tube  
Tube  
20TxxAI-yy  
TO-220AB (insulated)  
2.3g  
20TxxB-yy  
20TxxBI-yy  
20TxxB-yy  
20TxxBI-yy  
4.3g  
4.8g  
TO-3P  
30  
30  
Tube  
Tube  
TO-3P (insulated)  
TO-263(D2PAK)  
50  
Tube  
20TxxH-yy  
20TxxH-yy  
2.0g  
Note: xx = voltage, yy = sensitivity  
ORDERING INFORMATION SCHEME  
-
BW  
20 T 06  
A
Current  
20 = 20A  
Triac series  
Voltage  
06 = 600V  
08 = 800V  
10 = 1000V  
Package type  
A = TO-220AB (non-insulated)  
AI = TO-220AB ( insulated)  
B = TO-3P (non-insulated)  
BI = TO-3P (insulated)  
H = TO-263 (D2PAK)  
I
GT  
Sensitivity  
BW = 50mA Snubberless  
CW = 35mA Snubberless  
Fig.1 Maximum power dissipation versus RMS on-state  
current (full cycle)  
Fig.2 Correlation between maximun RMS  
power dissipation and maximum allowable  
temperatures (Tamb and Tcase) for different  
thermal resistances heatsink + contact  
P (W)  
P (W)  
Tcase (°C)  
30  
30  
25  
20  
15  
65  
75  
R
=0°C/W  
th  
R
25  
20  
15  
=0.5°C/W  
th  
α =180°  
85  
α =120°  
95  
R
=1.5°C/W  
th  
α =90°  
α =60°  
105  
10  
5
R
=1°C/W  
10  
5
th  
180°  
α
α =30°  
115  
125  
IT(RMS)(A)  
α
Tamb(°C)  
0
0
10  
5
15  
20  
0
20  
40  
60  
80  
100  
120  
0
www.nellsemi.com  
Page 3 of 5  
RoHS  
20T Series RoHS  
SEMICONDUCTOR  
Fig.3 RMS on-state current versus case temperature  
(full cycle)  
Fig.4 Relative variation of thermal impedance  
versus pulse duration.  
IT(RMS) (A)  
K=[Zth/Rth]  
1
25  
20  
15  
10  
5
α =180°  
Z
th(j-c)  
TO-220AB  
TO-263  
TO-3P  
Z
th(j-a)  
TO-220AB(insulated)  
TO-3P(insulated)  
0.1  
Tc(°C)  
0
tp(s)  
1E+0  
0.01  
0
10 20 30 40 50 60 70 80 90 100 110 120 130  
1E-3  
1E-2  
1E-1  
1E+1  
1E+2 5E+2  
Fig.6 Surge peak on-state current versus number  
of cycles.  
Fig.5 On-state characteristics (maximum values).  
I
(A)  
T max.  
ITSM (A)  
1000  
100  
1000  
j
V
R
= 1.04V  
= 20Ωm  
to  
d
t=20ms  
Non repetitive  
T initial=25°C  
One cycle  
T =T max  
j
j
j
10  
1
T =25°C  
j
VTM(V)  
Number of cycles  
100  
1
10  
100  
1000  
1
2
3
4
5
Fig.7 Non-repetitive surge peak on-state current  
for a sinusoidal pulse with width tp < 10ms.  
and corresponding value of l2t.  
Fig.8 Relative variation of gate trigger current and  
holding current versus junction temperature.  
lTSM (A), l2t(A2s)  
lGT,lH,lL[Tj] / lGT,lH,lL [Tj=25°C]  
1000  
2.5  
2.0  
1.5  
1.0  
T initial=25°C  
j
I
TSM  
I
GT  
I
H
& I  
L
I2t  
0.5  
0.0  
tp(ms)  
Tj(°C)  
100  
0.01  
-40 -30 -20 -10  
0
10 20 30 40 50 60 70 80 90 100 110120 130  
0.10  
1.00  
10.00  
www.nellsemi.com  
Page 4 of 5  
RoHS  
20T Series RoHS  
SEMICONDUCTOR  
Case Style  
TO-220AB  
10.54 (0.415) MAX.  
4.70 (0.185)  
4.44 (0.1754)  
1.39 (0.055)  
1.14 (0.045)  
9.40 (0.370)  
9.14 (0.360)  
3.91 (0.154)  
3.74 (0.148)  
2.87 (0.113)  
2.62 (0.103)  
3.68 (0.145)  
3.43 (0.135)  
15.32 (0.603)  
14.55 (0.573)  
16.13 (0.635)  
15.87 (0.625)  
PIN  
8.89 (0.350)  
8.38 (0.330)  
1
2
3
4.06 (0.160)  
3.56 (0.140)  
29.16 (1.148)  
28.40 (1.118)  
2.79 (0.110)  
2.54 (0.100)  
1.45 (0.057)  
1.14 (0.045)  
14.22 (0.560)  
13.46 (0.530)  
2.67 (0.105)  
2.41 (0.095)  
0.90 (0.035)  
0.70 (0.028)  
5.20 (0.205)  
4.95 (0.195)  
2.65 (0.104)  
2.45 (0.096)  
0.56 (0.022)  
0.36 (0.014)  
TO-263(D2PAK)  
10.45 (0.411)  
9.65 (0.380)  
4.83 (0.190)  
4.06 (0.160)  
1.40 (0.055)  
1.14 (0.045)  
6.22 (0.245)  
1.40 (0.055)  
1.19 (0.047)  
9.14 (0.360)  
8.13 (0.320)  
15.85 (0.624)  
15.00 (0.591)  
0 to 0.254 (0 to 0.01)  
2.79 (0.110)  
2.29 (0.090)  
0.940 (0.037)  
0.686 (0.027)  
0.53 (0.021)  
0.36 (0.014)  
2.67 (0.105)  
2.41 (0.095)  
3.56 (0.140)  
2.79 (0.110)  
5.20 (0.205)  
4.95 (0.195)  
TO-3P  
www.nellsemi.com  
Page 5 of 5  

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