25PT08H [NELLSEMI]
Stansard SCRs, 25A; Stansard可控硅, 25A型号: | 25PT08H |
厂家: | NELL SEMICONDUCTOR CO., LTD |
描述: | Stansard SCRs, 25A |
文件: | 总5页 (文件大小:952K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RoHS
25PT Series RoHS
SEMICONDUCTOR
Stansard SCRs, 25A
Main Features
2
Symbol
Value
25
Unit
IT(RMS)
A
1
2
1
2
3
3
VDRM/VRRM
IGT
V
600 to 1600
4 to 40
TO-220AB (Non-lnsulated)
TO-220AB (lnsulated)
mA
(25PTxxA)
(25PTxxAI)
A2
DESCRIPTION
2
(A2)
The 25PT series of silicon controlled rectifiers are high
performance glass passivated technology, and are
suitable for general purpose applications.
A1
A2
G
TO-263 (D2PAK)
(G)3
1(A1)
Using clip assembly technology, they provide a
superior performance in surge current capabilities.
(25PTxxH)
ABSOLUTE MAXIMUM RATINGS
TEST CONDITIONS
VALUE
UNIT
PARAMETER
SYMBOL
Tc=100°C
TO-263/TO-220AB
RMS on-state current full sine wave
(180° conduction angle )
IT(RMS)
A
A
25
TO-220AB insulated
TO-263/TO-220AB
TO-220AB insulated
F =50 Hz
Tc=83°C
Tc=100°C
Tc=83°C
t = 20 ms
t = 16.7 ms
Average on-state current
(180° conduction angle)
IT(AV)
16
300
314
Non repetitive surge peak on-state
ITSM
A
current (full cycle, T initial = 25°C)
j
F =60 Hz
I2t Value for fusing
A2s
A/µs
I2t
tp = 10 ms
450
50
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
F = 60 Hz
dI/dt
IGM
Tj = 125ºC
Tp = 20 µs
Tj = 125ºC
Tj = 125ºC
Peak gate current
4
10
1
A
Tp =20µs
Maximum gate power
PGM
W
W
PG(AV)
Average gate power dissipation
Repetitive peak off-state voltage
Tj =125ºC
Tj =125ºC
VDRM
VRRM
Tstg
600 to 1600
V
Repetitive peak reverse voltage
Storage temperature range
- 40 to + 150
- 40 to + 125
ºC
Tj
Operating junction temperature range
Page 1 of 5
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RoHS
25PT Series RoHS
SEMICONDUCTOR
ELECTRICAL SPECIFICATIONS
(TJ = 25 ºC unless otherwise specified)
25PTxxxx
SYMBOL
Unit
TEST CONDITIONS
D
-
Min.
Max.
Max.
4
4
IGT
mA
V
VD = 12V, RL = 33Ω
10
40
VGT
1.3
0.2
VD = VDRM, RL = 3.3KΩ
VGD
Tj = 125°C
Min.
V
RGK = 220Ω
IH
IL
IT = 500mA, Gate open
IG = 1.2× IGT
Max.
Min.
20
40
mA
mA
50
90
Tj = 125°C
V/µs
VD = 67% VDRM Gate open
,
dV/dt
VTM
Min.
Max.
Max.
Max.
Max.
Max.
500
1.6
5
Tj = 25°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 125°C
IT = 50A, tP = 380µs
V
µA
IDRM
IRRM
VD=VDRM, VR=VRRM
RGK = 220Ω
2
mA
V
Vto
Rd
Threshold Voltage
Dynamic Resistance
0.77
14
mΩ
THERMAL RESISTANCE
SYMBOL
Parameter
VALUE
UNIT
D2PAK/TO-220AB
1.0
°C/W
Rth(j-c)
Junction to case (DC)
Junction to ambient
2.0
45
60
TO-220AB insulated
TO-263(D2PAK)
S = 1 cm2
°C/W
Rth(j-a)
TO-220AB/TO-220AB insulated
S=Copper surface under tab
PRODUCT SELECTOR
VOLTAGE (xx)
PART NUMBER
SENSITIVITY
PACKAGE
800 V
1200 V
600 V
1000 V
1600 V
40 mA
40 mA
25PTxxA/25PTxxAl
25PTxxH
V
V
V
V
V
V
TO-220AB
D2PAK
V
V
V
V
V
V
V
V
V
V
25PTxxA-D/25PTxxAl-D
25PTxxH-D
4~10 mA
4~10 mA
TO-220AB
D2PAK
V
V
V
V
ORDERING INFORMATION
,
BASE Q TY
ORDERING TYPE
MARKING
PACKAGE
WEIGHT
DELIVERY MODE
25PTxxA-y
25PTxxAI-y
25PTxxA-y
25PTxxAI-y
25PTxxH-y
2.0g
2.3g
2.0g
TO-220AB
50
50
50
Tube
Tube
Tube
TO-220AB (insulated)
TO-263(D2PAK)
25PTxxH-y
Note: xx = voltage , y = sensitivity
Page 2 of 5
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RoHS
25PT Series RoHS
SEMICONDUCTOR
ORDERING INFORMATION SCHEME
25 PT 06
-
D
Current
25 = 25A, IT(RMS)
SCR series
Voltage Code
06 = 600V
08 = 800V
10 = 1000V
12 = 1200V
16 = 1600V
Package type
A = TO-220AB (non-insulated)
AI = TO-220AB ( insulated)
H = TO-263 (D2PAK)
IGT Sensitivity
D = 4~10mA
Blank = 4~40mA
Fig.1 Maximum average power dissipation
versus average on-state current.
Fig.2 Average and DC on-state current
versus case temperature.
lT(AV)(A)
P (W)
28
26
22
20
18
D²PAK
TO-220AB
24
D.C.
22
20
18
16
14
12
16
14
12
TO-220ABins
α=180°
10
8
10
8
6
6
360°
4
2
0
4
2
0
IT(AV)(A)
Tcase(°C)
α
0
2
4
6
8
10
12
14
16
0
25
50
75
100
125
Fig.3 Average and DC on-state current
versus ambient temperature.
Fig.4 Relative variation of thermal impedance
versus pulse duration.(D²PAK, and
TO-220AB)
K=[Zth/Rth]
lT(AV)(A)
1.00
3.5
3.0
2.5
2.0
1.5
D.C.
α=180°
Zth(j-c)
0.10
0.01
Z
th
(j-a)
D²PAK
TO-220AB
1.0
0.5
0.0
TO-220ABins
Tamb(°C)
tP(s)
0
25
50
75
100
125
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
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RoHS
25PT Series RoHS
SEMICONDUCTOR
Fig.6 Relative variation of gate trigger
holding, and latching currents
versus junction temperature.
Fig.5 Relative variation of thermal
impedance versus pulse duration.
(TO-220AB ins)
K=[Zth/Rth]
lGT,lH,lL[Tj] / lGT,lH,lL [Tj=25°C]
2.5
2.0
1.5
1.0E+01
Z
th(j-c)
l
GT
1.0E-01
I
H
& I
L
1.0
0.5
0.0
Z
th(j-a)
tP(s)
Tj(°C)
1.0E-02
1.0E+03
-40
-20
0
20
40
60
80
100
120
140
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02
Fig.7 Surge peak on-state current versus
number of cycles.
Fig.8 Non-repetitive surge peak on-state
current , and corresponding values
of l2t
ITSM (A), l²t (A²s)
ITSM (A)
2000
1000
350
300
250
200
150
100
Tj initial = 25°C
Tp=10ms
One cycle
lTSM
Non repetitive
T initial = 25°C
j
l2t
dl/dt
limitattion
Repetitive
T
50
0
Sinusoidal pulse width t (ms)
p
= 83 °C
case
Number of cycles
100
0.01
0.10
1.00
10.00
1
10
100
1000
Fig.9 On-state characteristics (maximum
values)
Fig.10 Thermal resistance junction to
ambient versus copper surface
under tab (D2PAK)
ITM (A)
R
th (j-a)(°C/W)
1000
100
80
70
60
50
40
30
20
Epoxy printed circuit board FR4,
copper thickness = 35 µm
10
1
Tj max.:
Vto = 0.77V
Rd = 14m
10
0
S(cm2)
VTM(V)
0.0 0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
4
8
12 16
20 24 28 32
36 40
Page 4 of 5
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RoHS
25PT Series RoHS
SEMICONDUCTOR
Case Style
TO-220AB
10.54 (0.415) MAX.
4.70 (0.185)
4.44 (0.1754)
1.39 (0.055)
1.14 (0.045)
9.40 (0.370)
9.14 (0.360)
3.91 (0.154)
3.74 (0.148)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
15.32 (0.603)
14.55 (0.573)
16.13 (0.635)
15.87 (0.625)
PIN
8.89 (0.350)
8.38 (0.330)
1
2
3
4.06 (0.160)
29.16 (1.148)
28.40 (1.118)
3.56 (0.140)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045)
14.22 (0.560)
13.46 (0.530)
2.67 (0.105)
2.41 (0.095)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
2.65 (0.104)
2.45 (0.096)
0.56 (0.022)
0.36 (0.014)
TO-263(D2PAK)
RoHS
10.45 (0.411)
9.65 (0.380)
4.83 (0.190)
4.06 (0.160)
1.40 (0.055)
1.14 (0.045)
6.22 (0.245)
1.40 (0.055)
9.14 (0.360)
8.13 (0.320)
1.19 (0.047)
15.85 (0.624)
15.00 (0.591)
0 to 0.254 (0 to 0.01)
2.79 (0.110)
2.29 (0.090)
0.940 (0.037)
0.686 (0.027)
0.53 (0.021)
0.36 (0.014)
2.67 (0.105)
2.41 (0.095)
3.56 (0.140)
2.79 (0.110)
5.20 (0.205)
4.95 (0.195)
2
(A2)
(G)3
1(A1)
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