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25PT10A [NELLSEMI]

Stansard SCRs, 25A; Stansard可控硅， 25A
25PT10A
型号： 25PT10A
厂家： NELL SEMICONDUCTOR CO., LTD    NELL SEMICONDUCTOR CO., LTD
描述：

Stansard SCRs, 25A
Stansard可控硅， 25A

可控硅
文件： 总5页 (文件大小：952K)
中文：  中文翻译
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RoHS  
25PT Series RoHS  
SEMICONDUCTOR  
Stansard SCRs, 25A  
Main Features  
2
Symbol  
Value  
25  
Unit  
IT(RMS)  
A
1
2
1
2
3
3
VDRM/VRRM  
IGT  
V
600 to 1600  
4 to 40  
TO-220AB (Non-lnsulated)  
TO-220AB (lnsulated)  
mA  
(25PTxxA)  
(25PTxxAI)  
A2  
DESCRIPTION  
2
(A2)  
The 25PT series of silicon controlled rectifiers are high  
performance glass passivated technology, and are  
suitable for general purpose applications.  
A1  
A2  
G
TO-263 (D2PAK)  
(G)3  
1(A1)  
Using clip assembly technology, they provide a  
superior performance in surge current capabilities.  
(25PTxxH)  
ABSOLUTE MAXIMUM RATINGS  
TEST CONDITIONS  
VALUE  
UNIT  
PARAMETER  
SYMBOL  
Tc=100°C  
TO-263/TO-220AB  
RMS on-state current full sine wave  
(180° conduction angle )  
IT(RMS)  
A
A
25  
TO-220AB insulated  
TO-263/TO-220AB  
TO-220AB insulated  
F =50 Hz  
Tc=83°C  
Tc=100°C  
Tc=83°C  
t = 20 ms  
t = 16.7 ms  
Average on-state current  
(180° conduction angle)  
IT(AV)  
16  
300  
314  
Non repetitive surge peak on-state  
ITSM  
A
current (full cycle, T initial = 25°C)  
j
F =60 Hz  
I2t Value for fusing  
A2s  
A/µs  
I2t  
tp = 10 ms  
450  
50  
Critical rate of rise of on-state current  
IG = 2xlGT, tr≤100ns  
F = 60 Hz  
dI/dt  
IGM  
Tj = 125ºC  
Tp = 20 µs  
Tj = 125ºC  
Tj = 125ºC  
Peak gate current  
4
10  
1
A
Tp =20µs  
Maximum gate power  
PGM  
W
W
PG(AV)  
Average gate power dissipation  
Repetitive peak off-state voltage  
Tj =125ºC  
Tj =125ºC  
VDRM  
VRRM  
Tstg  
600 to 1600  
V
Repetitive peak reverse voltage  
Storage temperature range  
- 40 to + 150  
- 40 to + 125  
ºC  
Tj  
Operating junction temperature range  
Page 1 of 5  
www.nellsemi.com  
RoHS  
25PT Series RoHS  
SEMICONDUCTOR  
ELECTRICAL SPECIFICATIONS  
(TJ = 25 ºC unless otherwise specified)  
25PTxxxx  
SYMBOL  
Unit  
TEST CONDITIONS  
D
-
Min.  
Max.  
Max.  
4
4
IGT  
mA  
V
VD = 12V, RL = 33Ω  
10  
40  
VGT  
1.3  
0.2  
VD = VDRM, RL = 3.3KΩ  
VGD  
Tj = 125°C  
Min.  
V
RGK = 220Ω  
IH  
IL  
IT = 500mA, Gate open  
IG = 1.2× IGT  
Max.  
Min.  
20  
40  
mA  
mA  
50  
90  
Tj = 125°C  
V/µs  
VD = 67% VDRM Gate open  
,
dV/dt  
VTM  
Min.  
Max.  
Max.  
Max.  
Max.  
Max.  
500  
1.6  
5
Tj = 25°C  
Tj = 25°C  
Tj = 125°C  
Tj = 125°C  
Tj = 125°C  
IT = 50A, tP = 380µs  
V
µA  
IDRM  
IRRM  
VD=VDRM, VR=VRRM  
RGK = 220Ω  
2
mA  
V
Vto  
Rd  
Threshold Voltage  
Dynamic Resistance  
0.77  
14  
mΩ  
THERMAL RESISTANCE  
SYMBOL  
Parameter  
VALUE  
UNIT  
D2PAK/TO-220AB  
1.0  
°C/W  
Rth(j-c)  
Junction to case (DC)  
Junction to ambient  
2.0  
45  
60  
TO-220AB insulated  
TO-263(D2PAK)  
S = 1 cm2  
°C/W  
Rth(j-a)  
TO-220AB/TO-220AB insulated  
S=Copper surface under tab  
PRODUCT SELECTOR  
VOLTAGE (xx)  
PART NUMBER  
SENSITIVITY  
PACKAGE  
800 V  
1200 V  
600 V  
1000 V  
1600 V  
40 mA  
40 mA  
25PTxxA/25PTxxAl  
25PTxxH  
V
V
V
V
V
V
TO-220AB  
D2PAK  
V
V
V
V
V
V
V
V
V
V
25PTxxA-D/25PTxxAl-D  
25PTxxH-D  
4~10 mA  
4~10 mA  
TO-220AB  
D2PAK  
V
V
V
V
ORDERING INFORMATION  
,
BASE Q TY  
ORDERING TYPE  
MARKING  
PACKAGE  
WEIGHT  
DELIVERY MODE  
25PTxxA-y  
25PTxxAI-y  
25PTxxA-y  
25PTxxAI-y  
25PTxxH-y  
2.0g  
2.3g  
2.0g  
TO-220AB  
50  
50  
50  
Tube  
Tube  
Tube  
TO-220AB (insulated)  
TO-263(D2PAK)  
25PTxxH-y  
Note: xx = voltage , y = sensitivity  
Page 2 of 5  
www.nellsemi.com  
RoHS  
25PT Series RoHS  
SEMICONDUCTOR  
ORDERING INFORMATION SCHEME  
25 PT 06  
-
D
Current  
25 = 25A, IT(RMS)  
SCR series  
Voltage Code  
06 = 600V  
08 = 800V  
10 = 1000V  
12 = 1200V  
16 = 1600V  
Package type  
A = TO-220AB (non-insulated)  
AI = TO-220AB ( insulated)  
H = TO-263 (D2PAK)  
IGT Sensitivity  
D = 4~10mA  
Blank = 4~40mA  
Fig.1 Maximum average power dissipation  
versus average on-state current.  
Fig.2 Average and DC on-state current  
versus case temperature.  
lT(AV)(A)  
P (W)  
28  
26  
22  
20  
18  
D²PAK  
TO-220AB  
24  
D.C.  
22  
20  
18  
16  
14  
12  
16  
14  
12  
TO-220ABins  
α=180°  
10  
8
10  
8
6
6
360°  
4
2
0
4
2
0
IT(AV)(A)  
Tcase(°C)  
α
0
2
4
6
8
10  
12  
14  
16  
0
25  
50  
75  
100  
125  
Fig.3 Average and DC on-state current  
versus ambient temperature.  
Fig.4 Relative variation of thermal impedance  
versus pulse duration.(D²PAK, and  
TO-220AB)  
K=[Zth/Rth]  
lT(AV)(A)  
1.00  
3.5  
3.0  
2.5  
2.0  
1.5  
D.C.  
α=180°  
Zth(j-c)  
0.10  
0.01  
Z
th  
(j-a)  
D²PAK  
TO-220AB  
1.0  
0.5  
0.0  
TO-220ABins  
Tamb(°C)  
tP(s)  
0
25  
50  
75  
100  
125  
1E-3  
1E-2  
1E-1  
1E+0  
1E+1  
1E+2 5E+2  
Page 3 of 5  
www.nellsemi.com  
RoHS  
25PT Series RoHS  
SEMICONDUCTOR  
Fig.6 Relative variation of gate trigger  
holding, and latching currents  
versus junction temperature.  
Fig.5 Relative variation of thermal  
impedance versus pulse duration.  
(TO-220AB ins)  
K=[Zth/Rth]  
lGT,lH,lL[Tj] / lGT,lH,lL [Tj=25°C]  
2.5  
2.0  
1.5  
1.0E+01  
Z
th(j-c)  
l
GT  
1.0E-01  
I
H
& I  
L
1.0  
0.5  
0.0  
Z
th(j-a)  
tP(s)  
Tj(°C)  
1.0E-02  
1.0E+03  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02  
Fig.7 Surge peak on-state current versus  
number of cycles.  
Fig.8 Non-repetitive surge peak on-state  
current , and corresponding values  
of l2t  
ITSM (A), l²t (A²s)  
ITSM (A)  
2000  
1000  
350  
300  
250  
200  
150  
100  
Tj initial = 25°C  
Tp=10ms  
One cycle  
lTSM  
Non repetitive  
T initial = 25°C  
j
l2t  
dl/dt  
limitattion  
Repetitive  
T
50  
0
Sinusoidal pulse width t (ms)  
p
= 83 °C  
case  
Number of cycles  
100  
0.01  
0.10  
1.00  
10.00  
1
10  
100  
1000  
Fig.9 On-state characteristics (maximum  
values)  
Fig.10 Thermal resistance junction to  
ambient versus copper surface  
under tab (D2PAK)  
ITM (A)  
R
th (j-a)(°C/W)  
1000  
100  
80  
70  
60  
50  
40  
30  
20  
Epoxy printed circuit board FR4,  
copper thickness = 35 µm  
10  
1
Tj max.:  
Vto = 0.77V  
Rd = 14m  
10  
0
S(cm2)  
VTM(V)  
0.0 0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
0
4
8
12 16  
20 24 28 32  
36 40  
Page 4 of 5  
www.nellsemi.com  
RoHS  
25PT Series RoHS  
SEMICONDUCTOR  
Case Style  
TO-220AB  
10.54 (0.415) MAX.  
4.70 (0.185)  
4.44 (0.1754)  
1.39 (0.055)  
1.14 (0.045)  
9.40 (0.370)  
9.14 (0.360)  
3.91 (0.154)  
3.74 (0.148)  
2.87 (0.113)  
2.62 (0.103)  
3.68 (0.145)  
3.43 (0.135)  
15.32 (0.603)  
14.55 (0.573)  
16.13 (0.635)  
15.87 (0.625)  
PIN  
8.89 (0.350)  
8.38 (0.330)  
1
2
3
4.06 (0.160)  
29.16 (1.148)  
28.40 (1.118)  
3.56 (0.140)  
2.79 (0.110)  
2.54 (0.100)  
1.45 (0.057)  
1.14 (0.045)  
14.22 (0.560)  
13.46 (0.530)  
2.67 (0.105)  
2.41 (0.095)  
0.90 (0.035)  
0.70 (0.028)  
5.20 (0.205)  
4.95 (0.195)  
2.65 (0.104)  
2.45 (0.096)  
0.56 (0.022)  
0.36 (0.014)  
TO-263(D2PAK)  
RoHS  
10.45 (0.411)  
9.65 (0.380)  
4.83 (0.190)  
4.06 (0.160)  
1.40 (0.055)  
1.14 (0.045)  
6.22 (0.245)  
1.40 (0.055)  
9.14 (0.360)  
8.13 (0.320)  
1.19 (0.047)  
15.85 (0.624)  
15.00 (0.591)  
0 to 0.254 (0 to 0.01)  
2.79 (0.110)  
2.29 (0.090)  
0.940 (0.037)  
0.686 (0.027)  
0.53 (0.021)  
0.36 (0.014)  
2.67 (0.105)  
2.41 (0.095)  
3.56 (0.140)  
2.79 (0.110)  
5.20 (0.205)  
4.95 (0.195)  
2
(A2)  
(G)3  
1(A1)  
Page 5 of 5  
www.nellsemi.com  

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