25T06H-BW [NELLSEMI]
TRIACs;
| 型号： | 25T06H-BW |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | TRIACs 三端双向交流开关 |
| 文件： | 总6页 (文件大小：613K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
25T Series RoHS
SEMICONDUCTOR
TRIACs, 25A
Snubberless and Standard
FEATURES
High current triac
Low thermal resistance with clip bonding
A2
Low thermal resistance insulation ceramic
for insulated TO-220AB & TO-3P package
1
A1
A2
2
High commutation (4 quadrant) or very
High commutation (3 quadrant) capability
3
G
TO-220AB (non-Insulated)
TO-220AB (lnsulated)
25T series are UL certified (File ref: E320098)
Packages are RoHS compliant
(25TxxA)
(25TxxAI)
APPLICATIONS
A2
Applications include the ON/OFF function in
applications such as static relays, heating
regulation, induction motor starting circuits,
etc., or for phase control operation in light
dimmers, motor speed controllers, and silmilar.
A1
A2
G
A1
A2
G
The snubberless versions are especially
recommended for use on inductive loads,
due to their high commutation performances.
The 25T series provides an insulated tab
(rated at 2500VRMS).
TO-3P (non-Insulated)
TO-3P (Insulated)
(25TxxB)
(25TxxBI)
A2
MAIN FEATURES
2(A2)
SYMBOL
VALUE
UNIT
A
A1
A2
3(G)
IT(RMS)
G
25
1(A1)
TO-263 (D2PAK)
VDRM/VRRM
IGT(Q1)
V
600 to 1200
35 to 50
(25TxxH)
mA
ABSOLUTE MAXIMUM RATINGS
VALUE
UNIT
PARAMETER
SYMBOL
TEST CONDITIONS
Tc = 105ºC
TO-3P
IT(RMS)
RMS on-state current (full sine wave)
Tc = 100ºC
Tc = 75ºC
t = 20 ms
t = 16.7 ms
TO-263/TO-220AB/TO-3P insulated
TO-220AB insulated
F =50 Hz
25
A
250
260
340
Non repetitive surge peak on-state
ITSM
A
current (full cycle, T initial = 25°C)
j
F =60 Hz
I2t
I2t Value for fusing
A2s
t
= 10 ms
p
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
Tj =125ºC
Tj =125ºC
A/µs
F =100 Hz
50
dI/dt
Tp =20 µs
Tj =125ºC
Peak gate current
IGM
4
1
A
PG(AV)
Average gate power dissipation
W
Tstg
Tj
Storage temperature range
- 40 to + 150
- 40 to + 125
ºC
Operating junction temperature range
www.nellsemi.com
Page 1 of 6
RoHS
25T Series RoHS
SEMICONDUCTOR
(TJ= 25 ºC unless otherwise specified)
ELECTRICAL CHARACTERISTICS
SNUBBERLESS and Logic level (3 quadrants)
25Txxxx
Unit
SYMBOL
TEST CONDITIONS
QUADRANT
BW
CW
(1)
I - II - III
I - II - III
IGT
35
mA
V
50
VD = 12 V, RL = 30Ω
MAX.
VGT
1.3
0.2
VD = VDRM, RL = 3.3KΩ
Tj = 125°C
I - II - III
VGD
MIN.
MAX.
MAX.
V
(2)
50
IT = 500 mA
IH
mA
75
I - III
70
80
80
IG = 1.2 IGT
IL
mA
II
100
dV/dt(2)
500
13
VD = 67% VDRM gate open ,T = 125°C
V/µs
1000
22
,
j
MIN.
(dI/dt)c(2)
Without snubber, T = 125°C
j
A/ms
ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified)
Standard (4 quadrants)
25Txxxx
B
TEST CONDITIONS
SYMBOL
UNIT
QUADRANT
50
I - II - III
(1)
IGT
MAX.
mA
VD = 12 V, RL = 30Ω
IV
100
1.3
VGT
VGD
V
V
ALL
ALL
VD = VDRM, RL = 3.3KΩ, Tj = 125°C
IT = 500 mA
0.2
(2)
mA
IH
MAX.
MAX.
80
I - III - IV
70
IL
IG = 1.2 IGT
mA
160
II
dV/dt(2)
VD = 67% VDRM, gate open, Tj = 125°C
(dI/dt)c =13.3 A/ms, Tj = 125°C
V/µs
V/µs
MIN.
MIN.
500
10
(dV/dt)c(2)
STATIC CHARACTERISTICS
SYMBOL
TEST CONDITIONS
UNIT
V
VALUE
1.55
0.85
16
(2)
ITM = 35 A, tP = 380 µs
Threshold voltage
Tj = 25°C
VTM
MAX.
MAX.
MAX.
(2)
Tj = 125°C
Vt0
V
(2)
Dynamic resistance
Rd
Tj = 125°C
Tj = 25°C
mΩ
µA
5
IDRM
IRRM
VD = VDRM
VR = VRRM
MAX.
Tj = 125°C
3
mA
Note 1: Minimum lGT is guaranted at 5% of lGT max.
Note 2: For both polarities of A2 referenced to A1.
THERMAL RESISTANCE
UNIT
SYMBOL
VALUE
TO-3P
0.6
0.8
TO-263/TO-220AB
TO-3P Insulated
TO-220AB Insulated
TO-263
Rth(j-c)
Junction to case (AC)
0.9
1.7
45
60
50
S = 1 cm2
°C/W
Rth(j-a)
TO-220AB Insulated, TO-220AB
TO-3P, TO-3P Insulated
Junction to ambient
S = Copper surface under tab.
www.nellsemi.com
Page 2 of 6
RoHS
25T Series RoHS
SEMICONDUCTOR
PRODUCT SELECTOR
VOLTAGE (xx)
PART NUMBER
SENSITIVITY
TYPE
PACKAGE
600 V
800 V
1000 V
1200 V
25TxxA-B/25TxxAl-B
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
50 mA
35 mA
50 mA
50 mA
35 mA
50 mA
50 mA
35 mA
50 mA
Standard
Snubberless
Snubberless
Standard
TO-220AB
TO-220AB
TO-220AB
TO-3P
25TxxA-CW/25TxxAl-CW
25TxxA-BW/25TxxAl-BW
25TxxB-B/25TxxBl-B
25TxxB-CW/25TxxBl-CW
25TxxB-BW/25TxxBl-BW
25TxxH-B
Snubberless
Snubberless
Standard
TO-3P
TO-3P
D2PAK
D2PAK
D2PAK
25TxxH-CW
Snubberless
Snubberless
25TxxH-BW
AI: Insulated TO-220AB package
BI: Insulated TO-3P package
ORDERING INFORMATION
,
WEIGHT
2.0g
PACKAGE
DELIVERY MODE
ORDERING TYPE
MARKING
BASE Q TY
25TxxA-yy
25TxxA-yy
TO-220AB
50
50
Tube
Tube
25TxxAI-yy
25TxxAI-yy
TO-220AB (insulated)
2.3g
25TxxB-yy
25TxxBI-yy
25TxxB-yy
25TxxBI-yy
4.3g
4.8g
TO-3P
30
30
Tube
Tube
TO-3P (insulated)
D2PAK
25TxxH-yy
25TxxH-yy
2.0g
50
Tube
Note: xx = voltage, yy = sensitivity
ORDERING INFORMATION SCHEME
-
BW
25 T 06
A
Current
25 = 25A
Triac series
Voltage
06 = 600V
08 = 800V
10 = 1000V
12 = 1200V
Package type
A = TO-220AB (non-insulated)
AI = TO-220AB ( insulated)
B = TO-3P (non-insulated)
BI = TO-3P (insulated)
H = TO-263 (D2PAK)
I
GT
Sensitivity
BW = 50mA Snubberless
CW = 35mA Snubberless
B = 50mA Standard
www.nellsemi.com
Page 3 of 6
RoHS
25T Series RoHS
SEMICONDUCTOR
Fig.1 Maximum power dissipation versus RMS on-state
current (full cycle)
Fig.2 RMS on-state current versus case temperature
(full cycle)
P (W)
IT(RMS) (A)
30
30
TO-3P
25
20
25
20
TO-220AB
(insulated)
15
10
5
15
10
5
TO-220AB
TO-263
TO-3P(insulated)
IT(RMS)(A)
TC(°C)
0
0
0
25
50
75
100
125
0
5
10
15
20
25
Fig.3 D2PAK RMS on-state current versus ambient
temperature (printed circuit board FR4,
copper thickness: 35µm)(full cycle)
Fig.4 Relative variation of thermal impedance
versus pulse duration.
IT(RMS) (A)
K=[Zth/Rth]
4.0
1E+0
D2PAK
Zth(j-c)
3.5
3.0
2.5
2.0
1.5
1.0
(S=1cm2)
Zth(j-a)
TO-263AB
TO-220AB
1E-1
TO-220AB (insulated)
1E-2
1E-3
Zth(j-a)
TO-3P(insulated)
0.5
0.0
Tamb(°C)
tp(s)
0
25
50
75
100
125
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
Fig.6 Surge peak on-state current versus number
of cycles.
Fig.5 On-state characteristics (maximum values).
I
(A)
ITSM (A)
300
250
200
150
100
300
T max.
j
to
d
V
= 0.85 V
t=20ms
100
10
1
R
= 16 mΩ
One cycle
Non repetitive
T =T max
j
j
T initial=25°C
j
T =25°C
j
Repetitive
T =75°C
c
50
0
VTM(V)
Number of cycles
1
10
100
1000
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
www.nellsemi.com
Page 4 of 6
RoHS
25T Series RoHS
SEMICONDUCTOR
Fig.7 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10ms.
and corresponding value of l2t.
Fig.8 Relative variation of gate trigger current,holding
current and latching current versus junction
temperature (typical values).
lTSM (A), l2t(A2s)
lGT,lH,lL[Tj] / lGT,lH,lL [Tj=25°C]
3000
1000
2.5
2.0
1.5
1.0
0.5
0.0
Tj initial=25°C
dI/dt limitation:
50A/µs
IGT
ITSM
IH & IL
I2t
Tj(°C)
tp(ms)
100
0.01
0.10
1.00
10.00
-40
-20
0
20
40
60
80
100
120 140
Fig.9 Relative variation of critical rate of decrease
Fig.10 Relative variation of critical rate of decrease
of main current versus Tj
of main current versus (dV/dt)c (typical values).
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
5
4
CW/BW
B
3
2
1
0
Tj(°C)
(dV/dt)c (V/µs)
0.1
100.0
1.0
10.0
0
25
50
75
100
125
Fig.11 D2PAK thermal resistance junction to
ambient versus copper surface under
tab (printed circuit board FR4, copper
thickness: 35µm)
Rth(j-a)(°C/W)
80
70
60
50
40
TO-263
30
20
10
0
S(cm2)
0
4
8
12
16
20
24
28
32
36
40
www.nellsemi.com
Page 5 of 6
RoHS
25T Series RoHS
SEMICONDUCTOR
Case Style
TO-220AB
10.54 (0.415) MAX.
4.70 (0.185)
4.44 (0.1754)
1.39 (0.055)
1.14 (0.045)
9.40 (0.370)
9.14 (0.360)
3.91 (0.154)
3.74 (0.148)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
15.32 (0.603)
14.55 (0.573)
16.13 (0.635)
15.87 (0.625)
PIN
8.89 (0.350)
8.38 (0.330)
1
2
3
4.06 (0.160)
3.56 (0.140)
29.16 (1.148)
28.40 (1.118)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045)
14.22 (0.560)
13.46 (0.530)
2.67 (0.105)
2.41 (0.095)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
2.65 (0.104)
2.45 (0.096)
0.56 (0.022)
0.36 (0.014)
TO-263(D2PAK)
10.45 (0.411)
9.65 (0.380)
4.83 (0.190)
4.06 (0.160)
1.40 (0.055)
1.14 (0.045)
6.22 (0.245)
1.40 (0.055)
1.19 (0.047)
9.14 (0.360)
8.13 (0.320)
15.85 (0.624)
15.00 (0.591)
0 to 0.254 (0 to 0.01)
2.79 (0.110)
2.29 (0.090)
0.940 (0.037)
0.686 (0.027)
0.53 (0.021)
0.36 (0.014)
2.67 (0.105)
2.41 (0.095)
3.56 (0.140)
2.79 (0.110)
5.20 (0.205)
4.95 (0.195)
TO-3P
15.50 (0.610)
15.10 (0.594)
4.60 (0.181)
4.40 (0.173)
1.55 (0.061)
1.45 (0.057)
R 4.60 (0.181)
Φ4.17 (0.164)
4.08 (0.160)
21.10 (0.831)
20.40 (0.803)
16.50 (0.650)
15.80 (0.622)
3.65 (0.144)
3.40 (0.134)
1
2
3
1.40 (0.055)
1.20 (0.047)
15.60 (0.614)
14.35 (0.565)
2(A2)
5.65 (0.222)
5.40 (0.213)
5.65 (0.222)
5.40 (0.213)
0.70 (0.028)
0.50 (0.020)
2.90 (0.114)
2.70 (0.106)
3(G)
1(A1)
www.nellsemi.com
Page 6 of 6
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