4T06A-T [NELLSEMI]
TRIACs, 4A Snubberless, Logic Level and Standard; 三端双向可控硅，4A无缓冲器，逻辑层次和水平
| 型号： | 4T06A-T |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | TRIACs, 4A Snubberless, Logic Level and Standard |
| 文件： | 总7页 (文件大小：398K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
4T Series RoHS
SEMICONDUCTOR
TRIACs, 4A
Snubberless, Logic Level and Standard
MAIN FEATURES
2
SYMBOL
VALUE
UNIT
A
2
IT(RMS)
4
2
1
VDRM/VRRM
IGT(Q1)
V
600 to 1000
5 to 50
1
3
2
3
mA
TO-251 (I-PAK)
TO-252 (D-PAK)
(4TxxF)
(4TxxG)
DESCRIPTION
A2
The 4T triac series is suitable for general purpose AC
switching. They can be used as an ON/OFF function in
applications such as static relays, heating regulation,
induction motor starting circuits... or for phase control
operation in light dimmers, motor speed controllers,...
1
2
3
A1
A2
G
TO-220AB (non-Insulated)
TO-220AB (lnsulated)
The snubberless and logic level versions are specially
recommended for use on inductive loads, thanks to their
high commutation performances.
(4TxxA)
(4TxxAI)
By using an internal ceramic pad, the 4T series provides
voltage insulated tab (rated at 2500VRMS) complying
with UL standards (File ref. :E320098)
ITO-220AB
(4TxxAF)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUE
UNIT
Tc = 105ºC
TO-251/TO-252/TO-220AB
TO-220AB insulated
F =50 Hz
RMS on-state current (full sine wave)
IT(RMS)
4
A
Tc = 100ºC
t = 20 ms
35
38
6
Non repetitive surge peak on-state
ITSM
A
current (full cycle, T initial = 25°C)
j
F =60 Hz
t = 16.7 ms
I2t
I2t Value for fusing
A2s
t
= 10 ms
p
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
Tj =125ºC
Tj =125ºC
A/µs
F =100 Hz
50
dI/dt
Tp =20 µs
Tj =125ºC
Peak gate current
IGM
4
1
A
PG(AV)
Average gate power dissipation
Storage temperature range
Operating junction temperature range
W
Tstg
Tj
- 40 to + 150
- 40 to + 125
ºC
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Page 1 of 7
RoHS
4T Series RoHS
SEMICONDUCTOR
ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified)
SNUBBERLESS and Logic level (3 quadrants)
4Txxxx
Unit
QUADRANT
SYMBOL
TEST CONDITIONS
TW
SW
CW
(1)
IGT
I - II - III
I - II - III
MAX.
MAX.
05
10
35
mA
V
VD = 12 V, RL = 30Ω
VGT
1.3
VD = VDRM, RL = 3.3KΩ
Tj = 125°C
VGD
MIN.
MAX.
MAX.
MIN.
I - II - III
0.2
V
(2)
IT = 200 mA
IH
mA
15
25
30
35
10
I - III
50
60
10
15
IG = 1.2 IGT
IL
mA
II
dV/dt(2)
VD = 67% VDRM gate open ,Tj = 125°C
,
V/µs
20
40
400
(dV/dt)c = 0.1 V/µs
(dV/dt)c = 10 V/µs
-
-
Tj = 125°C
Tj = 125°C
Tj = 125°C
2.7
2.0
-
1.8
0.9
-
(dI/dt)c(2)
MIN.
A/ms
Without snubber
2.5
ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified)
Standard (4 quadrants)
4Txxxx
TEST CONDITIONS
SYMBOL
UNIT
QUADRANT
T
5
5
D
5
S
A
10
10
10
25
I - II - III
(1)
IGT
MAX.
mA
10
VD = 12 V, RL = 30Ω
IV
VGT
VGD
1.3
0.2
V
V
ALL
ALL
VD = VDRM, RL = 3.3KΩ, Tj = 125°C
IT = 200 mA
(2)
5
10
15
5
10
10
20
5
10
15
25
10
25
25
40
50
mA
IH
MAX.
MAX.
I - III - IV
IL
IG = 1.2 IGT
mA
II
dV/dt(2)
MIN.
MIN.
VD = 67% VDRM, gate open, Tj = 125°C
V/µs
(dV/dt)c(2)
(dI/dt)c = 1.7 A/ms,
Tj = 125°C
0.5
1
2
5
STATIC CHARACTERISTICS
SYMBOL
TEST CONDITIONS
UNIT
VALUE
1.55
0.85
100
5
(2)
ITM = 5.5 A, tP = 380 µs
Threshold voltage
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
VTM
VTO
MAX.
MAX.
MAX.
V
(2)
(2)
Dynamic resistance
RD
mΩ
µA
IDRM
IRRM
VD = VDRM
VR = VRRM
MAX.
1
mA
Note 1: Minimum lGT is guaranted at 5% of lGT max.
Note 2: For both polarities of A2 referenced to A1.
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Page 2 of 7
RoHS
4T Series RoHS
SEMICONDUCTOR
THERMAL RESISTANCE
UNIT
SYMBOL
VALUE
TO-220AB,TO-251, TO-252
TO-220AB Insulated, ITO-220AB
TO-252
2.6
4.0
70
60
Rth(j-c)
Junction to case (AC)
°C/W
S = 0.5 cm2
Rth(j-a)
TO-220AB Insulated, TO-220AB, ITO-220AB
Junction to ambient
°C/W
TO-251
100
S = Copper surface under tab.
PRODUCT SELECTOR
VOLTAGE (xx)
PART NUMBER
SENSITIVITY
TYPE
PACKAGE
1000 V
600 V
V
800 V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
35 mA
10 mA
10 mA
10 mA
5 mA
Snubberless
Standard
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
4TxxA-CW/4TxxAl-CW
4TxxA-S/4TxxAl-S
V
V
V
V
Standard
4TxxA-A/4TxxAl-A
Logic level
4TxxA-SW/4TxxAl-SW
V
V
V
Standard
Standard
Logic level
4TxxA-T/4TxxAI-T
4TxxA-D/4TxxAl-D
V
V
V
5 mA
V
5 mA
TO-220AB
4TxxA-TW/4TxxAI-TW
4TxxF-CW
V
I-PAK
V
V
35 mA
35 mA
10 mA
10 mA
5 mA
Snubberless
D-PAK
V
V
Snubberless
Logic level
Logic level
Logic level
Logic level
4TxxG-CW
4TxxF-SW
V
V
I-PAK
D-PAK
V
4TxxG-SW
4TxxF-TW
V
V
V
I-PAK
4TxxG-TW
V
5 mA
D-PAK
V
4TxxF-T/D/S/A
4TxxG-T/D/S/A
4TxxAF-CW
4TxxAF-SW
4TxxAF-TW
4TxxAF-D
V
V
5 /5/10/10 mA
5 /5/10/10 mA
35 mA
10 mA
5 mA
Standard
Standard
I-PAK
V
D-PAK
V
Snubberless
Logic level
Logic level
ISOWAT TO-220AB
ISOWAT TO-220AB
ISOWAT TO-220AB
ISOWAT TO-220AB
ISOWAT TO-220AB
V
V
V
V
V
V
V
V
5 mA
Standard
Standard
4TxxAF-A
V
10 mA
V
ORDERING INFORMATION
,
WEIGHT
PACKAGE
DELIVERY MODE
ORDERING TYPE
MARKING
4TxxA-yy
4TxxAI-yy
BASE Q TY
4TxxA-yy
2.0g
2.3g
TO-220AB
50
50
Tube
Tube
4TxxAI-yy
TO-220AB (insulated)
4TxxF-yy
4TxxG-yy
4TxxF-yy
4TxxG-yy
0.40g
0.38g
TO-251(I-PAK)
TO-252(D-PAK)
80
80
Tube
Tube
4TxxAF-yy
4TxxAF-yy
ISOWAT TO-220AB
2.5g
50
Tube
Note: xx = voltage, yy = sensitivity
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Page 3 of 7
RoHS
4T Series RoHS
SEMICONDUCTOR
ORDERING INFORMATION SCHEME
-
CW
4
T 06
A
Current
4 = 4A
Triac series
Voltage
06 = 600V
08 = 800V
10 = 1000V
Package type
A = TO-220AB (non-insulated)
AI = TO-220AB ( insulated)
AF= TO-220F(ISOWAT TO-220AB, insulated)
F = TO-251 (I-PAK)
G = TO-252 (D-PAK)
I
Sensitivity
GT
T = 5mA Standard
D = 5mA Standard
S = 10mA Standard
A = 10mA Standard
CW = 35mA Snubberless
TW = 5mA Logic Level
SW = 10mA Logic Level
Fig.1 Maximum power dissipation versus RMS on-state
current (full cycle)
Fig.2 RMS on-state current versus case temperature
(full cycle)
P (W)
I
(A)
T(RMS)
6
4.5
4.0
3.5
3.0
2.5
2.0
1.5
5
4
3
2
TO-220AB / DPAK / IPAK
ITO-220AB
TO-220AB (insulated)
1.0
0.5
1
0
I
(A)
T(RMS)
TC(°C)
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
25
50
75
100
125
Fig.3 RMS on-state current versus ambient
temperature (printed circuit board FR4,
copper thickness: 35µm)(full cycle)
Fig.4 Relative variation of thermal impedance
versus pulse duration.
K=[Z /R
]
th th
I
(A)
T(RMS)
2.0
1.8
1.6
1.4
1E+0
1E-1
1E-2
R
th(j-c)
DPAK
(S=0.5cm2)
ISOWATT220AB
R
th(j-a)
TO-220AB / DPAK / IPAK
1.2
1.0
0.8
0.6
0.4
0.2
0.0
TO-220AB / TO-220AB (insulated)
DPAK / IPAK
t (s)
p
T (°C)
c
0
25
50
75
100
125
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
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Page4 of 7
RoHS
4T Series RoHS
SEMICONDUCTOR
Fig.5 On-state characteristics (maximum values).
Fig.6 Surge peak on-state current versus number
of cycles.
ITM (A)
ITSM (A)
100
40
T =25°C
j
35
30
25
20
15
10
5
T =125°C
j
t=20ms
One cycle
Non repetitive
Tj initial=25°C
10
1
Repetitive
T =100°C
c
Tj max. :
Vto = 0.85 V
Rd = 100 mW
VTM(V)
Number of cycles
0
0
1
2
3
4
5
6
7
8
9
10
1
10
100
1000
Fig.7 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10ms.
and corresponding value of l2t.
Fig.8 Relative variation of gate trigger current,holding
current and latching current versus junction
temperature (typical values).
lTSM (A), l2t(A2s)
l
,l ,l [T ] / l ,l ,l [T =25°C]
H L j GT H L j
GT
2.5
2.0
1.5
1.0
0.5
0.0
1000
100
Tj initial=25°C
IGT
dI/dt limitation:
50A/µs
ITSM
IH & IL
10
I2t
T (°C)
j
tp(ms)
-40
-20
0
20
40
60
80
100
120 140
1
0.01
0.10
1.00
10.00
Fig.10 Relative variation of critical rate of decrease
of main current versus junction temperature
Fig.9 Relative variation of critical rate of decrease
of main current versus (dV/dt)c (typical values).
(dl/dt)c [T ] / (dl/dt)c [T specified]
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
j
j
2.4
2.2
2.0
1.8
1.6
6
5
4
1.4
A
3
2
1
0
1.2
1.0
0.8
S
D
0.6
0.4
0.2
0.0
T
T (°C)
j
(dV/dt)c (V/µs)
0.1
1.0
10.0
100.0
0
25
50
75
100
125
Fig.11 DPAK thermal resistance junction to
ambient versus copper surface under
tab (priented circuit board Fr4, copper
thickness:35 µm)
Rth(j-a)°(C/W)
100
90
80
70
60
50
40
30
20
10
0
S(cm2)
20
0
4
8
12
16
24
28 32
36
40
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Page 5 of 7
RoHS
4T Series RoHS
SEMICONDUCTOR
Case Style
TO-220AB
10.54 (0.415) MAX.
4.70 (0.185)
4.44 (0.1754)
1.39 (0.055)
1.14 (0.045)
9.40 (0.370)
9.14 (0.360)
3.91 (0.154)
3.74 (0.148)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
15.32 (0.603)
14.55 (0.573)
16.13 (0.635)
15.87 (0.625)
PIN
8.89 (0.350)
8.38 (0.330)
1
2
3
4.06 (0.160)
3.56 (0.140)
29.16 (1.148)
28.40 (1.118)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045)
14.22 (0.560)
13.46 (0.530)
2.67 (0.105)
2.41 (0.095)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
2.65 (0.104)
2.45 (0.096)
0.56 (0.022)
0.36 (0.014)
TO-251
(I-PAK)
6.6(0.26)
6.4(0.52)
2.4(0.095)
2.2(0.086)
1.5(0.059)
0.62(0.024)
0.48(0.019)
5.4(0.212)
5.2(0.204)
1.37(0.054)
6.2(0.244)
6(0.236)
4T
16.3(0.641)
15.9(0.626)
1.9(0.075)
1.8(0.071)
9.4(0.37)
9(0.354)
0.85(0.033)
0.76(0.03)
0.65(0.026)
0.55(0.021)
4.6(0.181)
4.4(0.173)
0.62(0.024)
0.45(0.017)
TO-252
(D-PAK)
2.4(0.095)
2.2(0.086)
6.6(0.259)
6.4(0.251)
1.5(0.059)
5.4(0.212)
5.2(0.204)
0.62(0.024)
0.48(0.019)
1.37(0.054)
2
6.2(0.244)
6(0.236)
9.35(0.368)
10.1(0.397)
1
2
3
0.89(0.035)
0.62(0.024)
0.45(0.017)
0.64(0.025)
1.14(0.045)
0.76(0.030)
2.28(0.090)
4.57(0.180)
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Page 6 of 7
RoHS
4T Series RoHS
SEMICONDUCTOR
Case Style
ITO-220AB
10.6
10.4
3.4
3.1
2.8
2.6
3.7
3.2 7.1
6.7
16.0
15.8
16.4
15.4
2
1
3
10°
3.3
3.1
13.7
13.5
0.9
0.7
0.48
0.44
2.54
TYP
2.54
TYP
2.85
2.65
4.8
4.6
All dimensions in millimeters
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Page 7 of 7
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