6PT10G [NELLSEMI]

Stansard SCRs, 6A; Stansard可控硅， 6A


型号：	6PT10G
厂家：	NELL SEMICONDUCTOR CO., LTD
描述：	Stansard SCRs, 6A Stansard可控硅， 6A 可控硅
文件：	总5页 (文件大小：146K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

RoHS

6PT Series

SEMICONDUCTOR

Stansard SCRs, 6A

Main Features

Symbol

Value

Unit

I_T(RMS)

600 to 1000

V_DRM/V_RRM

I_GT

TO-251 (I-PAK)

(6PTxxF)

TO-252 (D-PAK)

(6PTxxG)

DESCRIPTION

The 6PT series of silicon controlled rectifiers are high

performance glass passivated technology, and are

designed for power supply up to 400Hz on resistive or

inductive load.

TO-220AB (Non-lnsulated)

TO-220AB (lnsulated)

(6PTxxAI)

(6PTxxA)

(A2)

(G)3

1(A1)

ABSOLUTE MAXIMUM RATINGS

TEST CONDITIONS

VALUE

UNIT

PARAMETER

SYMBOL

Tc=110°C

Tc=105°C

Tc=110°C

Tc=105°C

TO-251/TO-252/TO-220AB

RMS on-state current full sine wave

(180° conduction angle )

I_T(RMS)

TO-220AB insulated

TO-251/TO-252/TO-220AB

Average on-state current

(180° conduction angle)

I_T(AV)

3.8

TO-220AB insulated

F =50 Hz

t = 20 ms

Non repetitive surge peak on-state

I_TSM

current (full cycle, T initial = 25°C)

F =60 Hz

t = 16.7 ms

I²t Value for fusing

A²s

A/µs

I²t

t_p= 10 ms

24.5

Critical rate of rise of on-state current

I_G= 2xl_GT, t_r≤100ns

F = 60 Hz

dI/dt

I_GM

T_j= 125ºC

T_p= 20 µs

T_j= 125ºC

Peak gate current

T_p=20µs

Maximum gate power

P_GM

P_G(AV)

Average gate power dissipation

Repetitive peak off-state voltage

T_j=125ºC

V_DRM

V_RRM

T_stg

600 to 1000

Repetitive peak reverse voltage

Storage temperature range

- 40 to + 150

- 40 to + 125

ºC

T_j

Operating junction temperature range

www.nellsemi.com

Page 1 of 5

RoHS

6PT Series

SEMICONDUCTOR

ELECTRICAL SPECIFICATIONS

(T_J= 25 ºC unless otherwise specified)

6PTxxxx

SYMBOL

Unit

TEST CONDITIONS

I_GT

Max.

V_D= 12V, R_L= 30Ω

V_GT

1.3

V_D= V_DRM, R_L= 3.3KΩ

R_GK= 220Ω, T_j= 110°C

V_GD

Min.

0.2

I_H

I_L

I_T= 100mA, Gate open

I_G= 1.2× I_GT

Max.

Min.

V/µs

V_D= 67% V_DRMGate open, T_j= 110°C

dV/dt

V_TM

200

1.6

T_j= 25°C

T_j= 110°C

I_T= 12A, t_P= 380 µs

Max.

µA

I_DRM

I_RRM

V_D=V_DRM, V_R=V_RRM

R_GK= 220Ω

V_D= 67% V_DRMI_TM= 12A, V_R= 25V

dI_TM= 30A/µs, dV_D/dt =50V/µs

T_j= 110°C

TYP.

t_q

µS

THERMAL RESISTANCE

SYMBOL

Parameter

VALUE

UNIT

R_th(j-c)

Junction to case (DC)

Junction to ambient

2.5

°C/W

IPAK/DPAK/TO-220AB

S = 0.5 cm²

TO-252(D-PAK)

TO-220AB

R_th(j-a)

°C/W

TO-251(I-PAK)

100

PRODUCT SELECTOR

VOLTAGE (xx)

PART NUMBER

PACKAGE

SENSITIVITY

600 V

800 V

1000 V

6PTxxA/6PTxxAl

6PTxxF

15 mA

TO-220AB

I-PAK

6PTxxG

D-PAK

ORDERING INFORMATION

WEIGHT

PACKAGE

DELIVERY MODE

ORDERING TYPE

6PTxxA

MARKING

BASE Q TY

6PTxxA

6PTxxAI

2.0g

2.3g

TO-220AB

Tube

6PTxxAI

TO-220AB (insulated)

6PTxxF

6PTxxG

6PTxxF

6PTxxG

0.40g

0.38g

TO-251(I-PAK)

TO-252(D-PAK)

Tube

Note: xx = voltage

www.nellsemi.com

Page 2 of 5

RoHS

6PT Series

SEMICONDUCTOR

ORDERING INFORMATION SCHEME

6 PT 06

Current

6 = 6A, I_T(RMS)

SCR series

Voltage Code

06 = 600V

08 = 800V

10 = 1000V

Package type

A = TO-220AB (non-insulated)

AI = TO-220AB ( insulated)

F = TO-251 (IPAK)

G = TO-252 (DPAK)

Fig.1 Maximum average power dissdipation

versus average on-state current

Fig.2 Correlation between maximum average

power dissipation and maximum

allowable temperature(T_amband T_lead

)

P(W)

T_lead(°C)

=0°C/W

P(W)

=10°C/W

=5°C/W

=15°C/W

α=180°

110

α=180°

α=120°

α=90°

α=60°

115

120

125

α=30°

360°

(A)

Tamb(°C)

T(AV)

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

100

120

140

www.nellsemi.com

Page 3 of 5

RoHS

6PT Series

SEMICONDUCTOR

Fig.4 Relative variation of thermal impedance

versus pulse duration

Fig.3 Average on-state current versus case

temperature

I_T(AV)(A)

K=[Zth(j-c)/Rth(j-c)]

th(j-c)

TO-220AB

Insulated

α=180°

th(j-a)

0.1

TO-251/TO-252

TO-220AB

t (s)

(°C)

case

0.01

1E-3

20 30 40 50 60 70 80 90 100 110 120 130

1E+0

5E+2

1E-2

1E-1

1E+1

1E+2

Fig.5 Relative variation of gate trigger current

versus junction temperature

Fig.6 Surge peak on-state current versus number

of cycles

I_T(AV)(A)

I_GT,I_H,I_L[Tj] / I_GT,I_H,I_L[Tj=25 C]

2.5

tp=10ms

One cycle

1.5

Tj inital=25°C

I_GT

I_H&I_L

0.5

Number of cycles

T (°C)

1000

100

-40 -30 -20 -10

10 20 30 40

60 70 80

100 110

Fig.7 Non-repetitive surge peak on-state current

for a sinusoidal pulse with width tp < 10 ms,

and corresponding values of l²t

Fig.8 On-state characteristics (maximum values)

I_TM(A)

I_TSM(A),I²t(A²s)

100

Tj inital=25 C

Tj=max

I_TSM

100

Tj=25°C

I²t

Tjmax

Vt0=0.1V

Rd=46mΩ

(ms)

VTM(V)

www.nellsemi.com

Page 4 of 5

RoHS

6PT Series

SEMICONDUCTOR

Case Style

TO-220AB

10.54 (0.415) MAX.

4.70 (0.185)

9.40 (0.370)

9.14 (0.360)

3.91 (0.154)

3.74 (0.148)

4.44 (0.1754)

1.39 (0.055)

1.14 (0.045)

2.87 (0.113)

2.62 (0.103)

3.68 (0.145)

3.43 (0.135)

15.32 (0.603)

14.55 (0.573)

16.13 (0.635)

15.87 (0.625)

8.89 (0.350)

8.38 (0.330)

4.06 (0.160)

29.16 (1.148)

28.40 (1.118)

3.56 (0.140)

2.79 (0.110)

2.54 (0.100)

1.45 (0.057)

1.14 (0.045)

14.22 (0.560)

13.46 (0.530)

2.67 (0.105)

2.41 (0.095)

0.90 (0.035)

0.70 (0.028)

5.20 (0.205)

4.95 (0.195)

2.65 (0.104)

2.45 (0.096)

0.56 (0.022)

0.36 (0.014)

TO-251

(I-PAK)

6.6(0.26)

6.4(0.52)

2.4(0.095)

2.2(0.086)

1.5(0.059)

0.62(0.024)

0.48(0.019)

5.4(0.212)

5.2(0.204)

1.37(0.054)

6.2(0.244)

6(0.236)

16.3(0.641)

15.9(0.626)

RoHS

1.9(0.075)

1.8(0.071)

9.4(0.37)

9(0.354)

0.85(0.033)

0.65(0.026)

0.55(0.021)

0.76(0.03)

4.6(0.181)

4.4(0.173)

0.62(0.024)

0.45(0.017)

TO-252

(D-PAK)

2.4(0.095)

2.2(0.086)

6.6(0.259)

6.4(0.251)

1.5(0.059)

5.4(0.212)

5.2(0.204)

0.62(0.024)

0.48(0.019)

1.37(0.054)

6.2(0.244)

6(0.236)

9.35(0.368)

10.1(0.397)

0.89(0.035)

0.64(0.025)

0.62(0.024)

0.45(0.017)

1.14(0.045)

0.76(0.030)

2.28(0.090)

(A2)

4.57(0.180)

(G)3

1(A1)

www.nellsemi.com

Page 5 of 5

相关型号：