GBJ2010 [NELLSEMI]

Glass Passivated Single-Phase Bridge Rectifier;


型号：	GBJ2010
厂家：	NELL SEMICONDUCTOR CO., LTD
描述：	Glass Passivated Single-Phase Bridge Rectifier 局域网二极管
文件：	总3页 (文件大小：599K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

RoHS

GBJ20 Series ^RoHS

Nell High Power Products

Glass Passivated Single-Phase Bridge Rectifier, 20A

GBJ2004 Thru GBJ2012

30±0.3

3.6±0.1

4.6±0.1

2.5±0.2

2.2±0.2

2.7±0.1

1±0.1

0.65±0.05

0.5±0.1

10±0.2

7.5±0.2 7.5±0.2

All dimensions in millimeters

FEATURES

UL recognition file number E320098

Typical IR less than 2.0 µA

High surge current capability

Low thermal resistance

Compliant to RoHS

Isolation voltage up to 2500V

TYPICAL APPLICATIONS

General purpose use in AC/DC bridge full wave

rectification for big power supply, field supply for DC motor,

industrial automation applications.

ADVANTAGE

PRIMARY CHARACTERRISTICS

International standard package

Epoxy meets UL 94 V-O flammability rating

Small volume, light weight

I_F(AV)

20A

V_RRM

I_FSM

I_R

400V to 1200V

Small thermal resistance

High heat-conduction rate

Low temperature rise

High temperature soldering guaranteed :

260°C/10 second, 2.3kg tension force

Weight: 6.5g (0.23 ozs)

300A

5 µA

V_F

1.10V

T_{J max.}

150ºC

Page 1 of 3

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RoHS

GBJ20 Series ^RoHS

Nell High Power Products

MAJOR RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise noted)

GBJ20

PARAMETER

UNIT

SYMBOL

V_RRM

V_RSM

400

500

400

600

700

600

800

900

800

1000

1100

1000

1200

1300

1200

Maximum repetitive peak reverse voltage

Peak reverse non-repetitive voltage

Maximum DC blocking voltage

V_DC

I_F(AV)

Maximum average forward rectified output current, T_c= 85°C

Peak forward surge current single sine-wave superimposed on

rated load

I_FSM

300

Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)

for fusing

A²s

I²t

374

V_ISO

T_J

RMS isolation voltage from case to leads

Operating junction storage temperature range

Storage temperature range

2500

-40 to 150

ºC

T_STG

-40 to 150

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

GBJ20

TEST

CONDITIONS

UNIT

PARAMETER

SYMBOL

I_F= 10A

V_F

I_R

Maximum instantaneous forward drop per diode

1.10

Maximum reverse DC current at rated DC blocking

voltage per diod

T_A= 25°C

T_A= 150°C

µA

500

THERMAL AND MECHANICAL (T = 25°C unless otherwise noted)

GBJ20

UNIT

PARAMETER

TEST CONDITIONS

SYMBOL

Typical thermal resistance

junction to case

Single-side heat dissipation, sine

half wave

(1)

R_θJC

1.0

°C/W

A mounting compound is recommended

and the torque should be rechecked after

a period of 3 hours to allow for the spread

of the compound.

Mounting

N m

torque

0.8

6.5

to heatsink M3

± 10 %

Approximate weight

Notes

(1) With heatsink, single side heat dissipation, half sine wave.

Ordering Information Tabel

GBJ 20

Device code

Product type : “GBJ” Package,1Ø Bridge

I_F(AV)rating : "20" for 20A

Voltage code : code x 100 = V_RRM

Page 2 of 3

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RoHS

GBJ20 Series ^RoHS

Nell High Power Products

Fig.1 Derating curve for output rectified current

Fig.2 Maximum non-repetitive peak forward

surge current per bridge element

Single half-sine-wave

(JEDEC method)

300

220

= 25°C

140

100

150

100

Ambient temperature (°C)

50H

Fig.3 Typical reverse characteristics per

bridge element

Fig.4 Typical forward characteristics per

bridge element

100

1.0

0.1

= 25°C

0.01

0.1

0.5

100

120

140

0.7

0.9

1.1

1.3

Percent of rated peak reverse voltage (%)

Forward voltage (v)

Page 3 of 3

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