GBJ3504H [NELLSEMI]
Glass Passivated Single-Phase Bridge Rectifier;
| 型号： | GBJ3504H |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | Glass Passivated Single-Phase Bridge Rectifier |
| 文件： | 总3页 (文件大小：595K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
RoHS
GBJ35H Series
Nell High Power Products
Glass Passivated Single-Phase Bridge Rectifier, 35A
GBJ3504H Thru GBJ3512H
30±0.3
29±0.2
30±0.3
3.6±0.1
0.85±0.05
Aluminum base
plate
Ø3.2±0.2
Ø4.0
Ø6.0±0.2
1.0±0.1
+
~
~
Aluminum base
plate
4.6±0.1
2.0±0.2
1.0±0.1
10±0.2
0.65±0.05
7.5±0.2 7.5±0.2
All dimensions in millimeters
FEATURES
UL recognition file number E320098
Typical IR less than 2.0 µA
High surge current capability
Low thermal resistance
Compliant to RoHS
Isolation voltage up to 2500V
Front
Rear
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave
rectification for big power supply, field supply for DC motor,
industrial automation applications.
ADVANTAGE
+
~
~
International standard package
Epoxy meets UL 94 V-O flammability rating
Small volume, light weight
PRIMARY CHARACTERRISTICS
IF(AV)
35A
Small thermal resistance
High heat-conduction rate
Low temperature rise
High temperature soldering guaranteed :
260°C/10 second, 2.3kg tension force
Weight: 6.7g (0.24 ozs)
VRRM
IFSM
IR
400V to 1200V
400A
5 µA
VF
1.10V
TJ max.
150ºC
Page 1 of 3
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RoHS
RoHS
GBJ35H Series
Nell High Power Products
MAJOR RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise noted)
A
GBJ35..H
PARAMETER
UNIT
SYMBOL
04
06
08
10
12
VRRM
VRSM
400
500
400
600
700
600
800
1000
1100
1000
1200
1300
1200
Maximum repetitive peak reverse voltage
Peak reverse non-repetitive voltage
V
900
V
V
A
Maximum DC blocking voltage
VDC
800
IF(AV)
Maximum average forward rectified output current, Tc = 85°C
35
Peak forward surge current single sine-wave superimposed on
rated load
IFSM
A
400
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)
for fusing
A2s
I2t
664
VISO
TJ
2500
RMS isolation voltage from case to leads
V
Operating junction storage temperature range
-40 to 150
ºC
ºC
TSTG
-40 to 150
Storage temperature range
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
GBJ35..H
TEST
CONDITIONS
UNIT
PARAMETER
SYMBOL
04
06
08
1.10
5
10
12
VF
IR
IF = 17.5A
Maximum instantaneous forward drop per diode
V
Maximum reverse DC current at rated DC blocking
voltage per diod
TA = 25°C
µA
TA = 150°C
500
THERMAL AND MECHANICAL (T = 25°C unless otherwise noted)
A
GBJ35..H
08
UNIT
PARAMETER
TEST CONDITIONS
SYMBOL
04
06
10
12
Typical thermal resistance
junction to case
Single-side heat dissipation, sine
half wave
(1)
RθJC
0.80
°C/W
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound.
Mounting
.
N m
0.8
6.7
torque
to heatsink M3
± 10 %
Approximate weight
g
Notes
(1) With heatsink, single side heat dissipation, half sine wave.
Ordering Information Tabel
Device code
10
H
GBJ
35
1
2
3
4
-
-
-
-
Product type : “GBJ” Package,1Ø Bridge
IF(AV) rating : "35" for 35A
1
2
3
4
Voltage code : code x 100 = VRRM
H: With Aluminum base plate (heatsink)
Page 2 of 3
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RoHS
RoHS
GBJ35H Series
Nell High Power Products
Fig.1 Derating curve for output rectified current
Fig.2 Maximum non-repetitive peak forward
surge current per bridge element
50
40
400
300
200
T
= 25°C
J
30
20
100
0
10
0
0
50
100
150
1
10
100
Ambient temperature (°C)
Number of cycles at 50H
z
Fig.3 Typical reverse characteristics per
bridge element
Fig.4 Typical forward characteristics per
bridge element
100
10
100
10
1.0
1.0
0.1
0.1
T
= 25°C
J
0.01
0
20
40
60
80
100
120
140
0.5
0.7
0.9
1.1
1.3
Percent of rated peak reverse voltage (%)
Forward voltage (v)
Page 3 of 3
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