MTP250D [NELLSEMI]
Three-Phase Bridge Rectifier;
| 型号： | MTP250D |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | Three-Phase Bridge Rectifier |
| 文件： | 总3页 (文件大小：669K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
MTP250D Series
Nell High Power Products
Three-Phase Bridge Rectifier, 250A
MTP25008D Thru MTP25018D
( MTP250-08 Thru MTP250-18 )
80.00
25.00
Ø6.5
-
+
~
~
~
26.00
26.00
94.0
72.0
5-M6 Screw
All dimensions in millimeters
FEATURES
UL recognition file number E320098
Typical IR less than 2.0 µA
High surge current capability
Low thermal resistance
Compliant to RoHS
Isolation voltage up to 2500V
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave
rectification for big power supply, field supply for DC motor,
PRIMARY CHARACTERRISTICS
industrial automation applications.
IF(AV)
250A
VRRM
800V to 1800V
3600A
ADVANTAGE
IFSM
IR
International standard package
20 µA
Epoxy meets UL 94 V-O flammability rating
VF
1.30V
Small volume, light weight
TJ max.
150ºC
Small thermal resistance
Weight: 300g (10.6 ozs)
Page 1 of 3
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RoHS
MTP250D Series
Nell High Power Products
MAJOR RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise noted)
A
MTP250..D
12
PARAMETER
UNIT
SYMBOL
08
10
16
18
VRRM
VRSM
800
900
800
1000
1100
1000
1200
1600
1700
1600
1800
1900
1800
Maximum repetitive peak reverse voltage
Peak reverse non-repetitive voltage
V
1300
1200
250
V
V
A
Maximum DC blocking voltage
VDC
IF(AV)
Maximum average forward rectified output current at TC=100°C
Peak forward surge current single sine-wave superimposed on
rated load
IFSM
A
3600
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)
for fusing
2
I t
2
A s
64800
VISO
TJ
RMS isolation voltage from case to leads
Operating junction storage temperature range
Storage temperature range
2500
V
-40 to 150
ºC
ºC
TSTG
-40 to 125
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
MTP250..D
TEST
UNIT
PARAMETER
SYMBOL
CONDITIONS
IF = 250A
08
10
12
1.30
20
16
18
VF
Maximum instantaneous forward drop per diode
V
µA
TA = 25°C
Maximum reverse DC current at rated DC blocking
voltage per diod
IR
mA
TA = 150°C
10
THERMAL AND MECHANICAC (T = 25°C unless otherwise noted)
A
MTP250..D
12
UNIT
PARAMETER
TEST CONDITIONS
SYMBOL
08
10
16
18
Typical thermal resistance
junction to case
Single-side heat dissipation, sine
half wave
(1)
RθJC
0.085
°C/W
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound.
5
Mounting
to heatsink M6
Nm
torque
to terminal M6
± 10 %
5
Approximate weight
g
320
Notes
(1) With heatsink, single side heat dissipation, half sine wave.
Device code
(MTP25016D=MTP250-16)
MTP 250
16
D
1
3
2
4
-
-
1
2
3
4
Module type: “MTP” for 3 Bridge
IF(AV) rating: "250" for 250A
-
-
Voltage code: code x 100 = V
RRM
Package Outline: D type package
Page 2 of 3
www.nellsemi.com
RoHS
MTP250D Series
Nell High Power Products
Fig.1 Forward current vs. Forward voltage
Fig.2 Thermal lmpedance (junction to case)
3.5
0.12
3
T =150°C
J
0.09
2.5
2
0.06
1.5
0.03
1
0
0.5
10
100
0.001
0.01
0.1
1
10
1000
Peak on-state current (A)
Time (s)
Fig.3 Power Consumption vs. Avergage Current
Fig.4 Case Temperature vs. O-state Average Current
700
350
600
500
400
300
300
250
200
150
100
50
200
100
0
0
180
0
50
100
150
200
250
0
30
60
90
120
150
On-state average current (A)
Case Temperature (°C)
2
Fig.5 Forward Surge Current vs. Cycle
Fig.6 I t characteristic
70
60
50
40
30
20
10
0
4.0
3.0
2.0
1.0
0
10
1
10
100
1
Cycle @ 50Hz
Time (ms)
Page 3 of 3
www.nellsemi.com
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