MTP5008M1 [NELLSEMI]
Glass Passivated Triple-Phase Bridge Rectifier;
| 型号： | MTP5008M1 |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | Glass Passivated Triple-Phase Bridge Rectifier |
| 文件： | 总3页 (文件大小：655K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MTP50M1 RoHS
Nell High Power Products
Glass Passivated Triple-Phase Bridge Rectifier, 50A
MTP5006M1 Thru MTP5016M1
42±0.5
18.2±0.5
13.3±0.2
13.3±0.2
6±0.2
~
~
~
1±0.2
Front
Φ5.5±0.2
+
6.35±0.10 (TYP.)
9±0.2 (TYP.)
26.6±0.2
All dimensions in millimeters
Rear
FEATURES
UL recognition file number E320098
Universal 3-way terminals: snap-on, wire
wrap-around, or PCB mounting
Typical IR less than 1.0 µA
High surge current capability
Low thermal resistance
Solder dip 260°C, 40s
Compliant to RoHS
Glass passivated chips
Unique molding body
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave
rectification for big power supply, field supply for DC motor,
industrial automation applications.
PRIMARY CHARACTERRISTICS
MECHANICAL DATA
IF(AV)
50A
VRRM
IFSM
IR
600V to 1600V
Case: Molded GBPC
Epoxy meets UL 94 V-O flammability rating
550A
5 µA
1.1V
Terminals: Nickel plated on faston lugs, solderable per
J-STD-002 and JESD22-B102.
VF
Polarity: As marked
TJ max.
150ºC
Mounting Torque: 20 inches-lbs.max.
Weight: 29g (1.02 ozs)
Page 1 of 3
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MTP50M1 RoHS
Nell High Power Products
MAJOR RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise noted)
A
MTP50..M1
10
PARAMETER
UNIT
SYMBOL
06
08
12
16
VRRM
VRMS
1600
600
1200
Maximum repetitive peak reverse voltage
Maximum RMS voltage
800
560
800
V
1000
700
1120
1600
420
600
840
V
V
A
1200
Maximum DC blocking voltage
VDC
1000
IF(AV)
Maximum average forward rectified output current (Fig.1), TC=85°C
50
Peak forward surge current single sine-wave superimposed on
rated load
IFSM
550
A
Rating (non-repetitive, for t greater than 1 ms and less than 10 ms)
for fusing
2
A s
2
I t
1510
VISO
RMS isolation voltage from case to leads
2500
V
Operating junction storage temperature range
-55 to 150
TJ,TSTG
ºC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
MTP50..M1
10
1.1
5
1000
300
TEST
UNIT
PARAMETER
SYMBOL
CONDITIONS
IF = 25A
TA = 25°C
TA = 150°C
06
08
12
16
Maximum instantaneous forward drop per diode
VF
V
Maximum reverse DC current at rated DC blocking
voltage per diod
IR
µA
Typical junction capacitance per diode
pF
CJ
4V, 1MHz
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
MTP50..M1
UNIT
PARAMETER
SYMBOL
06
08
10
12
16
(1)
RθJC
Typical thermal resistance
0.8
°C/W
Notes
(1) With heatsink
(2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with
M5 screw
ORDERING INFORMATION TABLE
MTP 50
10
M1
Device code
1
3
2
4
-
-
-
-
Module type: 3 phase Bridge
1
2
3
4
Current rating: I
F (AV)
Voltage code x 10: V
RRM
Package outline, M1 for “Molding GBPC”package
Page 2 of 3
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MTP50M1 RoHS
Nell High Power Products
Fig.1 Forward Current Derating Curve
Fig.2 Typical Forward Characteristics
50
40
30
20
10
0
50
40
30
20
10
0
Mounted on a
220x220x50mm
Al plate heatsink
max.
typ.
Resistive or
Inductive load
0
50
100
150
0.6
0.8
1.0
1.2
1.4
1.6
Case temperature - TC(°C)
lnstantaneous forward voltage - VF (V)
Fig.3 Max Non-Repetitive Peak Surge Current
Fig.4 Transient thermal impedance
750
600
450
300
150
0
1.0
0.5
0
Zth(j-C)
1
10
100
0.001
0.01
0.1
1.0
10
100
Number of cycles at 60Hz
Square wave pulse duration (s)
Page 3 of 3
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