MTP50A1_17 [NELLSEMI]
Glass Passivated Triple-Phase Bridge Rectifier;型号: | MTP50A1_17 |
厂家: | NELL SEMICONDUCTOR CO., LTD |
描述: | Glass Passivated Triple-Phase Bridge Rectifier |
文件: | 总3页 (文件大小:664K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MTP50A1 RoHS
Nell High Power Products
Glass Passivated Triple-Phase Bridge Rectifier, 50A
MTP5006A1 Thru MTP5016A1
24±0.3
-
~
~
~
+
28.5±0.5
6.3
0.8
+0.3
0
Ø5
FEATURES
All dimensions in millimeters
UL recognition file number E320098
Universal 3-way terminals: snap-on, wire
wrap-around, or PCB mounting
Typical IR less than 1.0 µA
High surge current capability
Low thermal resistance
Solder dip 260°C, 40s
Compliant to RoHS
Glass passivated chips
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave
rectification for big power supply, field supply for DC motor,
industrial automation applications.
MECHANICAL DATA
PRIMARY CHARACTERRISTICS
IF(AV)
Case: GBPC
50A
Epoxy meets UL 94 V-O flammability rating
VRRM
IFSM
IR
600V to 1600V
Terminals: Gold plated on faston lugs or gold plated on
500A
5 µA
1.2V
wire leads,solderable per J-STD-002 and
JESD22-B102.
Polarity: As marked
Mounting Torque: 20 inches-lbs.max.
Weight: 21g (0.74 ozs)
VF
TJ max.
150ºC
Page 1 of 3
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MTP50A1 RoHS
Nell High Power Products
MAJOR RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise noted)
A
MTP50..A1
PARAMETER
UNIT
SYMBOL
08
12
06
10
16
VRRM
VRMS
1600
600
1200
Maximum repetitive peak reverse voltage
Maximum RMS voltage
800
560
800
V
1000
700
1120
1600
420
600
840
V
V
A
1200
Maximum DC blocking voltage
VDC
1000
IF(AV)
Maximum average forward rectified output current (Fig.1)
50
Peak forward surge current single sine-wave superimposed on
rated load
IFSM
A
500
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)
for fusing
2
A s
2
I t
1000
VISO
RMS isolation voltage from case to leads
2500
V
Operating junction storage temperature range
TJ,TSTG
-55 to 150
ºC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
MTP50..A1
TEST
UNIT
PARAMETER
SYMBOL
CONDITIONS
IF = 25A
TA = 25°C
TA = 150°C
08
12
06
10
1.2
5
16
VF
Maximum instantaneous forward drop per diode
V
Maximum reverse DC current at rated DC blocking
voltage per diod
IR
µA
1000
CJ
Typical junction capacitance per diode
pF
4V, 1MHz
300
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
MTP50..A1
UNIT
PARAMETER
SYMBOL
08
12
06
10
16
(1)
RθJC
Typical thermal resistance
1.0
°C/W
Notes
(1) With heatsink
(2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with
#10 screw
ORDERING INFORMATION TABLE
A1
MTP 50
16
Device code
1
3
2
4
-
-
-
-
Module type: 3 phase Bridge
1
2
3
4
Current rating: I
F(AV)
Voltage code x 100 : V
RRM
Package outline,A1 for “GBPC”package
Page 2 of 3
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MTP50A1 RoHS
Nell High Power Products
Fig.1 Forward Current Derating Curve
Fig.2 Typical Forward Characteristics
50
40
30
20
50
Mounted on a
220x220x50mm
Al plate heatsink
40
30
20
10
10
max.
typ.
Resistive or
Inductive load
Tj=25℃
Pulse Width=300μs
0
0
0
50
100
150
0.6
0.8
1.0
1.2
1.4
1.6
TC ℃)
(
CASE TEMPERATURE -
INSTANTANEOUS FORWARD VOLTAGE - VF (V)
Fig.3 Max Non-Repetitive Peak Surge Current
Fig.4 Transient thermal impedance
500
1.0
0.5
0
400
300
200
Zth(j-C)
100
8.3ms Single Half
Sine-Wave JEDEC Method
0
1
10
100
0.001
0.01
0.1
1.0
10
100
NUMBER OF CYCLES AT 60 HZ
SQUARE WAVE PULSE DURATION (S)
Page 3 of 3
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