MTPT100 [NELLSEMI]
Three-Phase Bridge Thyristor, 100A; 三相桥式可控硅， 100A
| 型号： | MTPT100 |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | Three-Phase Bridge Thyristor, 100A |
| 文件： | 总5页 (文件大小：430K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
RoHS
MTPT100
SEMICONDUCTOR
Nell High Power Products
Three-Phase Bridge + Thyristor, 100A
MTPT10008 Thru MTPT10016
80
32
30
20
-
R2
+
2- 5.5
~
~
~
4
29
20
20
6-M5 SCREWS
93.5MAX
All dimensions in millimeters
FEATURES
UL recognition file number E320098
Three-phase bridge and a thyristor
-
G
R2
+
High surge current capability
Low thermal resistance
Compliant to RoHS
Isolation voltage up to 2500V
Applications
lnverter for AC or DC motor control
Current stablilzed power supply
Switching power supply
PRIMARY CHARACTERRISTICS
IF(AV)
100A
ADVANTAGE
VRRM
IFSM
800V to 1600V
International standard package
1200A
20 µA
1.3V
Epoxy meets UL 94 V-O flammability rating
IR
Small volume, light weight
Small thermal resistance
Weight: 250g (8.8 ozs)
VFM/VTM
TJ max.
150ºC
Page 1 of 5
RoHS
RoHS
MTPT100
SEMICONDUCTOR
Nell High Power Products
Maximum Ratings for Diodes
MAJOR RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise noted)
A
MTPT100
12
SYMBOL
PARAMETER
UNIT
08
16
VRRM/VRRM
Maximum repetitive peak reverse voltage
Peak reverse non-repetitive voltage
800
900
1200
1300
100
1600
1700
V
V
A
VRSM
IO
Output DC current three-phase full wave, Tc = 100°C
Peak forward surge current single sine-wave superimposed on
rated load
IFSM
A
1200
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)
for fusing
A2s
I2t
7200
-40 to 150
-40 to 125
Operating junction temperature range
Storage temperature range
TJ
ºC
ºC
TSTG
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
MTPT100
TEST
CONDITIONS
UNIT
PARAMETER
SYMBOL
08
12
1.3
20
8
16
IF = 100A
VF
IR
Maximum instantaneous forward drop per diode
V
Maximum reverse DC current at rated DC blocking
voltage per diod
TA = 25°C
µA
mA
TA = 150°C
Maximum Ratings fo Thyristor
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
A
100
85
Maximum average on-state current
at case temperature
180° conduction, half sine wave ,50Hz
t = 10 ms
IT(AV)
°C
1200
Maximum peak, one-cycle, on-state
non-repetitive surge current
ITSM
A
t = 8.3 ms
1260
7200
No voltage
reapplied
Sine half wave,
initial TJ =
t = 10 ms
t = 8.3 ms
6570
5040
4590
TJ maximum
Maximum I2t for fusing
I2t
A2
s
100%VRRM
reapplied
t = 10 ms
t = 8.3 ms
2
Maximum I2√
72
√
kA2√s
t
I
t = 0.1 ms to 10 ms, no voltage reapplied
t for fusing
Maximum on-state voltage drop
Maximum holding current
Maximum latching current
VTM
ITM = 100A, TJ = 25 °C, 180° conduction
1.3
100
400
V
Anode supply = 12 V initial IT = 30 A, TJ = 25 °C
IH
IL
mA
Anode supply = 12 V resistive load = 1 Ω
Gate pulse: 10 V, 100 μs, TJ = 25 °C
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Typical delay time
td
1
TJ = 25 °C ,gate current = 1A dlg/dt = 1 A/µs
Vd = 0.67 % VDRM
Typical rise time
tr
2
μs
ITM = 300A ; dl/dt = 15 A/µs ; TJ = TJ maximum,
VR = 50V ; dV/dt = 20V/µs ; gate 0V ,100Ω
tq
Typical tum-off time
50 to 150
Page 2 of 5
RoHS
RoHS
MTPT100
SEMICONDUCTOR
Nell High Power Products
BLOCKING
PARAMETER
SYMBOL
IRRM
IDRM
VISO
TEST CONDITIONS
VALUES
UNITS
Maximum peak reverse and
off-state leakage current
,
mA
TJ = 125 °C
20
50 Hz, circuit to base,
all terminals shorted, 25 ºC ,60s
TJ = TJ maximum,
exponential to 67 % rated VDRM
V
RMS isolation Voltage
2500
500
Critical rate of rise of
off-state voltage
dV/dt
V/μs
TRIGGERING
PARAMETER
SYMBOL
PGM
TEST CONDITIONS
VALUES
UNITS
≤
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
tp 5 ms, TJ = TJ maximum
15
5
W
A
PG(AV)
IGM
f = 50 Hz, TJ = TJ maximum
3
≤
tp 5 ms, TJ = TJ maximum
Maximum peak negative
gate voltage
- VGT
10
V
Maximum required DC
gate voltage to trigger
VGT
3
Anode supply = 12 V,
resistive load; Ra = 1
TJ = 25 °C
Ω
Maximum required DC
gate current to trigger
IGT
mA
V
100
Maximum gate voltage
that will not trigger
Maximum gate current
that will not trigger
VGD
IGD
0.25
10
DRM applied
TJ = TJ maximum, 67% V
mA
Maximum rate of rise of
turned-on current
= 25ºC ,IGM = 1.5A ,tr ≤ 0.5 µs
TJ
A/μs
dI/dt
150
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
junction operating and storage
temperature range
TJ Tstg
,
- 40 to 125
°C
Maximum thermal resistance,
0.3
RthJC
RthCS
DC operation
Mounting surface, smooth , flat and greased
case per junction
junction to
°C/W
Typical thermal resistance,
case to heatsink per module
0.12
A mounting compound is recommended and the
torque should be rechecked after a period of
about 3 hours to allow for the
3
3
to heatsink, M5
to terminal, M5
Mounting
torque ± 10 %
N.m
spread of the compound.
g
250
8.8
Approximate weight
oz.
Device code
MTPT
100 16
3
1
2
-
-
1
2
3
Module type : “MTPT” for 3Ø Bridge + Thyristor
IF(AV) rating : "100" for 100 A
-
Voltage code : code x 100 = VRRM
Page 3 of 5
RoHS
RoHS
MTPT100
SEMICONDUCTOR
Nell High Power Products
Fig.1 Power dissipation
Fig.2 Forward current derating curve
300
W
200
A
Three phase
Three phase
240
160
180
120
120
80
60
40
ID
0
Pvtot
0
Tc
0
50
100
°C 150
0
ID
20
40
60
80
A
100
Fig.3 Transient thermal impedance
Fig.4 Max non-repetitive forward surge current
2000
0.20
50HZ
A
°C/ W
Zth(j-C)
Per one element
1000
0.10
Single phase half wave
Tj=25°C start
0
0
cycles
10
100
0.001
t
0.01
0.1
1.0
10
S
100
1
Fig.5 Forward characteristics
Fig.6 SCR power dissipation
150
W
1000
max.
A
120
90
60
30
100
I
F
Tj=25°C
PTAV
10
0
VF
0.5
1.0
1.5
2.0
V
2.5
0
ID
20
40
60
80
A
100
Page 4 of5
RoHS
RoHS
MTPT100
SEMICONDUCTOR
Nell High Power Products
Fig.7 SCR forward current derating curve
Fig.8 SCR transient thermal impedance
200
A
0.50
°C / W
160
120
80
0.25
Zth(j-C)
40
ITAVM
0
0
0
50
150
0.001
t
0.01
0.1
1.0
10
S
100
Tc
100
°C
Fig.9 SCR forward characteristics
Fig.10 Gate trigger characteristics
100
1000
max.
V
A
Peak Forward Gate Voltage (10V)
10
1
100
-10°C
135°C
VG
IT
25°C
Maximum Gate Non-Trigger Voltage
T =25°C
j
0.1
10
101
102
103
104
mA
VTM
I G
0.5
1.0
1.5
2.0
V
2.5
Page 5 of 5
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