N-HFA30PA60C [NELLSEMI]
FRED Ultrafast Soft Recovery Diode, 2 x 15 A; FRED超快软恢复二极管， 2× 15 A
| 型号： | N-HFA30PA60C |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | FRED Ultrafast Soft Recovery Diode, 2 x 15 A |
| 文件： | 总6页 (文件大小：1064K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
RoHS
N-HFA30PA60C
SEMICONDUCTOR
Nell High Power Products
FRED
Ultrafast Soft Recovery Diode, 2 x 15 A
FEATURES
Ultrafast recovery
Ultrasoft recovery
Very low I
Very low Q
Specified at operating conditions
RRM
rr
Designed and qualified for industrial level
TO-247AB
BENEFITS
Reduced RFI and EMI
common
cathode
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
2
Reduced parts count
DESCRIPTION
HFA30PA60C is a state of the art center tap ultrafast
1
3
recovery diode.
Employing the latest in epitaxial
Anode
Anode
2
2
1
construction and advanced processing techniques
it features a superb combination of characteristics
which result in performance which is unsurpassed by
any rectifier previously available. With basic ratings
of 600V and 15 A per leg continuous current, the
HFA30PA60C is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition
to ultrafast recovery time, the FRED product line
features extremely low values of peak recovery
Common
cathode
PRODUCT SUMMARY
current (I
) and does not exhibit any tendency to
RRM
VR
VF at 15A at 25 °C
IF(AV)
600 V
“snap-off” during the t
b portion of recovery. The FRED
features combine to offer designers a rectifier with
lower noise and significantly lower switching losses
in both the diode and the switching transistor.
These FRED advantages can help to significantly
reduce snubbing, component count and heatsink
sizes. The FRED HFA30PA60C is ideally suited for
applications in power conversion systems (such as
inverters), motor drives, and many other similar
applications where high speed, high efficiency is
needed.
1.7 V
2 x 15 A
19 ns
t
rr (typical)
TJ (maximum)
rr (typical)
dI(rec)M/dt (typical)
RRM (typical)
150 °C
Q
80 nC
160 A/µs
4.0 A
I
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Cathode to anode voltage
VR
600
15
V
per leg
Maximum continuous forward current
IF
T
= 100 ºC
c
per device
30
A
Single pulse forward current
IFSM
IFRM
150
60
Maximum repetitive forward current
T
= 25 ºC
74
c
PD
Maximum power dissipation
W
T
= 100 ºC
29
c
Operating junction and storage temperature range
TJ, TStg
- 55 to + 150
ºC
Page 1 of 6
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N-HFA30PA60C
SEMICONDUCTOR
Nell High Power Products
ELECTRICAL SPECIFICATIONS
(T = 25 ºC unless otherwise specified)
J
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
TYP.
UNITS
MIN.
Cathode to anode
breakdown voltage
-
-
VBR
IR = 100 µA
600
IF = 15 A
IF = 30 A
-
-
1.55
1.80
1.40
1.7
2.0
V
VFM
Maximum forward voltage
IF = 15 A, TJ = 125 ºC
-
1.55
VR = VR rated
TJ = 125°C, VR = VR rated
VR = 200V
-
-
1.0
400
25
10
1000
Maximum reverse
leakage current
IRM
µA
Junction capacitance
Series inductance
pF
nH
CT
LS
50
-
-
12
Measured lead to lead 5 mm from package body
-
DYNAMIC RECOVERY CHARACTERISTICS PERLEG (T = 25 ºC unless otherwise specified)
J
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
MAX. UNITS
TYP.
IF = 0.5A, IR = 1.0A, IRR = 250mA (RG#1 CKT)
IF = 1.0 A, dIF/dt = -200 A/µs, VR =30 V, TJ = 25°C
-
-
33
25
trr
-
19
ns
Reverse recovery time
trr1
trr2
-
-
TJ = 25 ºC
42
70
60
TJ = 125 ºC
120
IF= 15A
dIF/dt = -200 A/µs
VR = 200 V
IRRM1
TJ = 25 ºC
-
-
6.0
4.0
Peak recovery current
A
IRRM2
Qrr1
TJ = 125 ºC
10
6.5
80
-
-
TJ = 25 ºC
TJ = 125 ºC
TJ = 25 ºC
TJ = 125 ºC
180
Reverse recovery charge
nC
Qrr2
220
250
160
600
-
dl(rec)M/dt1
dl(rec)M/dt2
-
Peak rate of fall of recovery
current during tb
A/µs
-
-
THERMAL - MECHANICAL SPECIFICATIONS PER LEG
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Lead temperature
Tlead
0.063'' from case (1.6 mm) for 10 s
-
-
300
°C
Junction to case,
single leg conduction
Junction to case,
both legs conducting
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
-
-
1.7
RthJC
-
-
-
-
-
0.85
40
-
K/W
RthJA
RthCS
Typical socket mount
Mounting surface, flat, smooth and greased
0.25
-
-
6.0
-
-
g
Weight
0.21
oz.
6.0
(5.0)
12
(10)
kgf . cm
(lbf . in)
Mounting torque
Marking device
-
Case style TO-247AB (JEDEC)
HFA30PA60C
Page 2 of 6
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N-HFA30PA60C
SEMICONDUCTOR
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Fig.1 Maximum Forward Voltage Drop vs. Instantaneous
Forward Current (Per Leg)
Fig.2 Typical Reverse Current vs. Reverse Voltage (Per Leg)
10000
100
T
= 150ºC
J
1000
100
10
T
= 125 ºC
J
1
0.1
0.01
T
= 25ºC
J
T = 150 ºC
J
0
100
200
300
400
500
600
T = 125 ºC
J
10
Reverse Voltage - V (V)
R
T = 25 ºC
J
Fig.3 Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
A
100
T = 25ºC
J
A
1
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
10
0
100
200
300
400
500
600
Reverse Voltage - V (V)
R
Fig.4 Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
t
1
0.02
0.01
SINGLE PULSE
t
2
(THERMAL RESPONSE)
Notes:
1. Duty factor D =t / t
1
2
2. Peak T
P
=
x
Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
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N-HFA30PA60C
SEMICONDUCTOR
Nell High Power Products
Fig.5 Typical Reverse Recovery Time vs. dIF/dt
(Per Leg)
Fig.7 Typical Stored Charge vs. dIF/dt (Per Leg)
800
100
80
60
40
20
0
VR = 200V
TJ = 125ºC
TJ = 25ºC
I
I
I
= 30A
= 15A
= 5.0A
F
F
F
600
400
200
0
I
I
= 30A
= 15A
= 5.0A
F
F
I
F
VR = 200V
TJ = 125 ºC
TJ = 25 ºC
100
1000
100
1000
dIF/dt - (A/s)
dIF/dt - (A/s)
Fig.8 Typical dI(rec)M/dt vs. dIF/dt (Per Leg)
Fig.6 Typical Recovery Current vs. dIF/dt (Per Leg)
25
10000
1000
100
VR= 200V
TJ = 125°C
TJ = 25°C
VR= 200V
TJ = 125 ºC
TJ = 25 ºC
20
I
I
= 30A
= 15A
F
F
I
= 5.0A
F
I
I
I
= 30A
= 15A
= 5.0A
F
F
F
15
10
5
0
100
1000
100
1000
dIF/dt - (A/s)
dIF/dt - (A/s)
Page 4 of 6
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N-HFA30PA60C
SEMICONDUCTOR
Nell High Power Products
Fig.9 Reverse Recovery Parameter Test Circuit
VR = 200 V
0.01 Ω
L = 70 焙
D.U.T.
D
dI /dt
F
adjust
IRFP250
G
S
Fig.10 Reverse Recovery Waveform and Definitions
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dI /dt - rate of change of current
F
and IRRM
through zero crossing
t
x l
2
rr
RRM
(2) IRRM - peak reverse recovery current
Q
=
rr
(3) t - reverse recovery time measured
rr
(5) dI(rec)M/dt - peak rate of change of
from zero crossing point of negative
current during t portion of trr
b
going I to point where a line passing
F
through 0.75 IRRM and 0.50RIRM
extrapolated to zero current.
Page 5 of 6
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N-HFA30PA60C
SEMICONDUCTOR
Nell High Power Products
ORDERING INFORMATION TABLE
Device code
-
HFA 30 PA
C
N
60
1
2
3
4
5
6
-
-
-
-
-
-
Nell Semiconductors product
1
2
3
4
FRED family
Current rating (30 = 30 A, 15A x 2)
Package outline (PA = TO-247, 3 pins)
Voltage rating (60 = 600 V)
5
6
Configuration (C = Center tap common cathode)
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