NKH11014 [NELLSEMI]
Thyristor/Diode Power Modules;
| 型号： | NKH11014 |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | Thyristor/Diode Power Modules |
| 文件： | 总4页 (文件大小：732K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
NKT110/NKH110 Series
Nell High Power Products
Thyristor/Diode and Thyristor/Thyristor, 110A
(ADD-A-PAK Power Modules)
ADD-A-PAK
FEATURES
• High voltage
• Electrically isolated by DBC ceramic (AI 2O3)
• 3000 VRMS isolating voltage
• Industrial standard package
• High surge capability
•
Two elements in one package
• Modules uses high voltage power thyristors/diodes in
twobasic configurations
• Simple mounting
• UL approved file E320098
• Compliant to RoHS
• Designed and qualified for multiple level
APPLICATIONS
• DC motor control and drives
• Battery charges
3
2
1
NKT
• Welders
• Power converters
• Lighting control
3
2
1
NKH
• Heat and temperature control
PRODUCT SUMMARY
IT(AV) / IF(AV)
110 A
MAJOR RATINGS AND CHARACTERISTICS
UNITS
SYMBOL
CHARACTERISTICS
VALUE
IT(AV) / IF(AV)
85 °C
85 °C
50 Hz
60 Hz
50 Hz
60 Hz
110
A
IT(RMS) / IF(RMS)
173
2400
A
ITSM / IFSM
2510
28.8
2
kA s
2
I t
26.1
2
I √t
2
s
kA √
288
Range
Range
600 to 1600
-40 to 125
V
VDRM / VRRM
TJ
°C
Apr 2017
Page 1 of 4
www.nellsemi.com
RoHS
NKT110/NKH110 Series
Nell High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
RRM/VDRM, MAXIMUMREPETITIVE VRSM/VDSM, MAXIMUM NON-REPETITIVE
IRRM/IDRM
AT 125 °C
mA
TYPE
VOLTAGE
CODE
PEAK REVERSE VOLTAGE
V
PEAK REVERSE VOLTAGE
V
NUMBER
08
12
14
16
800
900
1200
1400
1600
1300
1500
1700
NKT110
NKH110
12
FORWARD CONDUCTION
PARAMETER
Maximum average on-state current (thyristors)
Maximum average forward current (diodes)
UNITS
TEST CONDITIONS
VALUE
SYMBOL
lT(AV)
180° conduction, half sine wave, 50Hz , TC = 85°C
110
A
lF(AV)
lT(RMS)
lF(RMS)
180° conduction, half sine wave, 50Hz ,TC = 85°C
Maximum RMS on-state current
173
t = 10 ms
2400
2510
2016
2108
28.8
26.1
No voltage
A
reapplied
t = 8.3 ms
lTSM
lFSM
Maximum peak, one-cycle, on-state
non-repetitive surge current
t = 10 ms
100%VRRM
reapplied
t = 8.3 ms
Sine half wave,
initial TJ = TJ maximum
t = 10 ms
No voltage
reapplied
t = 8.3 ms
2
Maximum l t for fusing
2
kA s
2
l t
t = 10 ms
20.3
18.4
100%VRRM
reapplied
t = 8.3 ms
2
Maximum I √
2
I
2
s
kA √
t = 0.1 ms to 10 ms, no voltage reapplied
t for fusing
288
√
t
VT(TO)
Value of threshold voltage
0.80
V
TJ = TJ Maximum
rt
Value of on-state slope resistance
2.29
mΩ
Maximum on-state voltage drop
VTM
ITM = 330A, TJ = 25°C, 180° conduction
1.7
V
Maximum holding current
Maximum latching current
250
400
IH
IL
Anode supply = 6V, resistive load TJ = 25°C
mA
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum peak reverse and
off-state leakage current
IRRM
IDRM
mA
TJ = 125 °C
12
50 Hz, circuit to base,
2500 (1min)
3000 (1s)
VISO
V
RMS isolation Voltage
all terminals shorted
Critical rate of rise of
off-state voltage
TJ = TJ maximum,
dV/dt
V/μs
800
exponential to 67 % rated V DRM
Apr 2017
Page 2 of 4
www.nellsemi.com
RoHS
NKT110/NKH110 Series
Nell High Power Products
TRIGGERING
PARAMETER
SYMBOL
PGM
PG(AV)
IGM
TEST CONDITIONS
tp 5 ms, TJ = TJ maximum
f = 50 Hz, TJ = TJ maximum
VALUES
UNITS
≤
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
10
3
W
3
A
≤
tp 5 ms, TJ = TJ maximum
Maximum peak negative
gate voltage
- VGM
10
V
Maximum required DC
gate voltage to trigger
VGT
0.7~1.10
Anode supply = 6 V,
TJ = 25 °C
Ω
resistive load; Ra = 1
Maximum required DC
gate current to trigger
IGT
mA
30~100
Maximum gate voltage
that will not trigger
VGD
V
0.25
applied
TJ = TJ maximum, 66.7% V
DRM
Maximum gate current
that will not trigger
IGD
10
mA
Maximum rate of rise of
turned-on current
= 25ºC ,Gate drive 20V, 20Ω, tr ≤ 0.5 µs
TJ
dI/dt
150
A/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction operating
temperature range
- 40 to 125
TJ
°C
Maximum storage
temperature range
- 40 to 140
TStg
RthJC
RthCS
Maximum thermal resistance,
junction to case per junction
DC operation
0.25
°C/W
Maximum thermal resistance,
case to heatsink per module
0.10
Mounting surface, smooth , flat and greased
A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
Lubricated threads.
AAP to heatsink, M6
Mounting
torque ± 10 %
4
N.m
busbar to AAP, M5
g
175
6.2
Approximate weight
oz.
ADD-A-PAK
Case style
ORDERING INFORMATION TABLE
Device code
/
16
NTK
110
1
2
3
-
-
-
Module type: NKV / NKL / NTK
Current rating: 110 for 110A
1
2
3
Voltage code x 100 = V
RRM
Apr 2017
Page 3 of 4
www.nellsemi.com
RoHS
NKT110/NKH110 Series
Nell High Power Products
Fig.1 Peak On-state voltage vs. peak On-state
current
Fig.2 Max. thermal impedance (junction to case)
vs. time
2
0.3
1.8
1.6
1.4
1.2
1
0.25
0.2
0.15
0.1
0.05
0
TJ = 125°C
0.8
0.6
10
100
1000
0.001
0.01
0.1
1
10
Peak on-state current (A)
Time (s)
Fig.3 Power dissipation vs. average on-state
current
Fig.4 Case temperature vs. average
on-state current
300
250
200
150
100
50
140
120
100
80
180°
180°
0
180°
0
120°
90°
Conduction Angle
60°
Conduction Angle
30°
60
40
120°
30°
60° 90°
180°
20
0
0
0
30
60
90
120
150
0
50
100
150
200
On-state average current (A)
Average on-state current (A)
Fig.5 Surge on-state current vs. cycles
Fig.6 Gate characteristics
2.4
2.2
2
2
Peak Forward Gate Voltage (10V)
¹
10
P
e
a
P
A
k G
v
o
w
e
r
a
e
a
5
t
r (
g
e
e G
1
0
1.8
1.6
1.4
1.2
1
w
a
)
t
e P
o
w
e
r (
2
3
w
)
º
10
-40°C
5
25°C
125°C
0.8
0.6
0.4
2
Maximum Gate Voltage that will not trigger any unit
-1
10
²
³
10
¹
2
5
2
5
2
5
10
10
1
10
100
Gate current (mA)
Time (cycles)
Apr 2017
Page 4 of 4
www.nellsemi.com
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