NKT110A [NELLSEMI]
Thyristor/Diode and Thyristor/Thyristor, 110A(ADD-A-PAK Power Modules); 晶闸管/二极管和晶闸管/晶闸管， 110A （ADD -A- PAK功率模块）
| 型号： | NKT110A |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | Thyristor/Diode and Thyristor/Thyristor, 110A(ADD-A-PAK Power Modules) |
| 文件： | 总4页 (文件大小：1694K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
NKT110A/NKH110A Series RoHS
SEMICONDUCTOR
Nell High Power Products
Thyristor/Diode and Thyristor/Thyristor, 110A
(ADD-A-PAK Power Modules)
80
1
2
3
2-Ø6.4
ADD-A-PAK
15
20
20
15
92
68
FEATURES
• High voltage
3-M5 SCREWS
4-2.8x0.8
18
• Electrically isolated by DBC ceramic (AI 2O3)
• 3000 VRMS isolating voltage
• Industrial standard package
• High surge capability
• Glass passivated chips
• Modules uses high voltage power thyristor/diodes in two
basic configurations
• Simple mounting
All dimensions in millimeters
• UL approved file E320098
• Compliant to RoHS
• Designed and qualified for multiple level
(6)
(7)
APPLICATIONS
• DC motor control and drives
• Battery charges
NKT
NKH
(5)
(4)
• Welders
• Power converters
• Lighting control
(5)
(4)
• Heat and temperature control
PRODUCT SUMMARY
IT(AV)
110 A
MAJOR RATINGS AND CHARACTERISTICS
UNITS
VALUE
SYMBOL
CHARACTERISTICS
IT(AV)
85 °C
110
A
IT(RMS)
85 °C
50 Hz
60 Hz
50 Hz
60 Hz
173
2400
A
I
TSM /IFSM
2520
28.8
kA2s
I2t
26.3
I2√t
kA2√s
V
288
Range
Range
400 to 1600
-40 to 125
VDRM / VRRM
TJ
°C
www.nellsemi.com
Page 1 of 4
RoHS
RoHS
NKT110A/NKH110A Series
SEMICONDUCTOR
Nell High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM/VDRM, MAXIMUMREPETITIVE VRSM/VDSM, MAXIMUM NON-REPETITIVE
IRRM/IDRM
AT 125 °C
mA
TYPE
VOLTAGE
CODE
PEAK REVERSE VOLTAGE
V
PEAK REVERSE VOLTAGE
V
NUMBER
04
08
12
14
16
400
800
500
900
NKT110..A
NKH110..A
1200
1400
1600
1300
1500
1700
12
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
180° conduction, half sine wave ,50Hz
UNITS
VALUE
110
A
Maximum average on-state current
at case temperature
IT(AV)
lT(RMS)
ITSM
°C
85
Maximum RMS on-state current
180° conduction, half sine wave ,50Hz ,TC = 85°C
t = 10 ms
173
A
2400
2520
28.8
26.3
Maximum peak, one-cycle, on-state
non-repetitive surge current
t = 8.3 ms
No voltage
reapplied
Sine half wave,
initial TJ =
TJ maximum
t = 10 ms
t = 8.3 ms
Maximum I2t for fusing
I2t
kA2s
100%VRRM
reapplied
t = 10 ms
t = 8.3 ms
20.2
18.4
2
Maximum I2√
kA2√s
√
t
I
t = 0.1 ms to 10 ms, no voltage reapplied
ITM = 330A , TJ = 25 °C, 180° conduction
288
1.6
t for fusing
Maximum on-state voltage drop
VTM
VFM
V
, TJ = 25 °C, 180° conduction
IFM = 330A
Maximum forward voltage drop
Maximum holding current
1.3
Anode supply = 6
V,resistive load
, T
150
J = 25 °C
IH
IL
mA
Anode supply = 6 V resistive load,
T
400
Maximum latching current
J = 25 °C
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum peak reverse and
off-state leakage current
IRRM
IDRM
mA
TJ = 125 °C
12
50 Hz, circuit to base,
all terminals shorted
2500 (1min)
3000 (1s)
VISO
V
RMS isolation Voltage
Critical rate of rise of
off-state voltage
TJ = TJ maximum,
exponential to 67 % rated V DRM
dV/dt
V/μs
500
www.nellsemi.com
Page 2 of 4
RoHS
NKT110A/NKH110A Series RoHS
SEMICONDUCTOR
Nell High Power Products
TRIGGERING
PARAMETER
SYMBOL
PGM
TEST CONDITIONS
VALUES
UNITS
≤
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
tp 5 ms, TJ = TJ maximum
10
3
W
A
PG(AV)
IGM
f = 50 Hz, TJ = TJ maximum
3
≤
tp 5 ms, TJ = TJ maximum
Maximum peak negative
gate voltage
- VGT
10
V
Maximum required DC
gate voltage to trigger
VGT
0.7~1.8
Anode supply = 6 V,
resistive load; Ra = 1
TJ = 25 °C
Ω
Maximum required DC
gate current to trigger
IGT
mA
20~150
Maximum gate voltage
that will not trigger
Maximum gate current
that will not trigger
Maximum rate of rise of
turned-on current
VGD
IGD
V
0.25
10
DRM applied
TJ = TJ maximum, 66.7% V
mA
A/μs
= 25ºC ,IGM = 1.5A ,tr ≤ 0.5 µs
TJ
dI/dt
150
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction operating
temperature range
Maximum storage
temperature range
Maximum thermal resistance,
junction to ca se per junction
TJ
- 40 to 125
°C
TStg
RthJC
RthCS
- 40 to 150
0.25
DC operation
Mounting surface, smooth , flat and greased
°C/W
N.m
Maximum thermal resistance,
case to heatsink per module
0.069
A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
Lubricated threads.
AAP to heatsink, M6
Mounting
4
torque ± 10 %
busbar to AAP, M5
g
Approximate weight
Case style
120
oz.
4.23
ADD-A-PAK
ORDERING INFORMATION TABLE
Device code
/
110
16
A
NK
T
1
2
3
4
5
-
-
-
-
-
Module type
1
Circuit configuration
Current rating: IT(AV)
2
3
4
5
Voltage code x 100 = VRRM
Assembly type,”A” for soldering type
www.nellsemi.com
Page 3 of 4
RoHS
RoHS
NKT110A/NKH110A Series
SEMICONDUCTOR
Nell High Power Products
Fig.1 Peak On-state Voltage vs. Peak On-state Current
Fig.2 Max. Junction To case Thermal Impedance Vs. Time
0.3
3
0.25
0.2
2.6
2.2
1.8
1.4
1
0.15
0.1
0.05
0
0.6
10
100
1000
0.001
10
0.01
0.1
1
Time (s)
On-state current (A)
Fig.3 Power Dissipation Vs. Average On-state Current
Fig.4 Case Temperature Vs. Average On-state Current
300
140
120
180°
250
120°
90°
100
80
60°
200
30°
150
60
100
40
50
0
60°
90°
120°
30°
180°
20
0
120
150
30
90
60
0
0
30
90
120
60
150
180
210
On-state average current (A)
On-state average current (A)
Fig.5 Surge On-state Current Vs. Cycles
Fig.6 Gate characteristics
2.5
2
2
10¹
5
2
1.5
10º
5
1
2
10¯¹
0.5
10¹
2
5
10¯²
5
5
2
10¯³
2
1
10
100
Gate current (mA)
Cycles @50Hz
www.nellsemi.com
Page 4 of 4
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