74AUP1G00GW-Q100 [NEXPERIA]

Low-power 2-input NAND gateProduction;
74AUP1G00GW-Q100
型号: 74AUP1G00GW-Q100
厂家: Nexperia    Nexperia
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Low-power 2-input NAND gateProduction

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74AUP1G00-Q100  
Low-power 2-input NAND gate  
Rev. 3.1 — 11 July 2023  
Product data sheet  
1. General description  
The 74AUP1G00-Q100 is a single 2-input NAND gate. Schmitt-trigger action at all inputs makes  
the circuit tolerant of slower input rise and fall times. This device ensures very low static and  
dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully  
specified for partial power down applications using IOFF. The IOFF circuitry disables the output,  
preventing the damaging backflow current through the device when it is powered down.  
This product has been qualified to the Automotive Electronics Council (AEC) standard Q100  
(Grade 1) and is suitable for use in automotive applications.  
2. Features and benefits  
Automotive product qualification in accordance with AEC-Q100 (Grade 1)  
Specified from -40 °C to +85 °C and from -40 °C to +125 °C  
Wide supply voltage range from 0.8 V to 3.6 V  
CMOS low power dissipation  
High noise immunity  
Complies with JEDEC standards:  
JESD8-12 (0.8 V to 1.3 V)  
JESD8-11 (0.9 V to 1.65 V)  
JESD8-7 (1.65 V to 1.95 V)  
JESD8-5 (2.3 Vto 2.7 V)  
JESD8C (2.7 V to 3.6 V)  
ESD protection:  
HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V  
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V  
Low static power consumption; ICC = 0.9 μA (maximum)  
Latch-up performance exceeds 100 mA per JESD 78 Class II  
Overvoltage tolerant inputs to 3.6 V  
Low noise overshoot and undershoot < 10 % of VCC  
IOFF circuitry provides partial Power-down mode operation  
 
 
Nexperia  
74AUP1G00-Q100  
Low-power 2-input NAND gate  
3. Ordering information  
Table 1. Ordering information  
Type number  
Package  
Temperature range Name  
Description  
Version  
74AUP1G00GW-Q100 -40 °C to +125 °C  
TSSOP5  
plastic thin shrink small outline package; 5 leads; SOT353-1  
body width 1.25 mm  
4. Marking  
Table 2. Marking  
Type number  
Marking code [1]  
74AUP1G00GW-Q100  
pA  
[1] The pin 1 indicator is located on the lower left corner of the device, below the marking code.  
5. Functional diagram  
B
1
2
1
2
B
A
&
4
Y
4
Y
A
mna097  
mna098  
mna099  
Fig. 1. Logic symbol  
Fig. 2. IEC logic symbol  
Fig. 3. Logic diagram  
6. Pinning information  
6.1. Pinning  
GW package  
SOT353-1 (TSSOP5)  
1
2
3
5
B
A
V
Y
CC  
4
GND  
aaa-035731  
©
74AUP1G00_Q100  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2023. All rights reserved  
Product data sheet  
Rev. 3.1 — 11 July 2023  
2 / 14  
 
 
 
 
 
 
Nexperia  
74AUP1G00-Q100  
Low-power 2-input NAND gate  
6.2. Pin description  
Table 3. Pin description  
Symbol  
Pin  
1
Description  
B
data input  
A
2
data input  
GND  
Y
3
ground (0 V)  
data output  
supply voltage  
4
VCC  
5
7. Functional description  
Table 4. Function table  
H = HIGH voltage level; L = LOW voltage level.  
Input  
Output  
A
L
B
L
Y
H
H
H
L
L
H
L
H
H
H
8. Limiting values  
Table 5. Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).  
Symbol Parameter  
Conditions  
Min  
-0.5  
-50  
-0.5  
-50  
-0.5  
-0.5  
-
Max  
+4.6  
-
Unit  
V
VCC  
IIK  
supply voltage  
input clamping current  
input voltage  
VI < 0 V  
mA  
V
VI  
[1]  
+4.6  
-
IOK  
VO  
output clamping current  
output voltage  
VO < 0 V  
mA  
Active mode  
[1]  
[1]  
VCC + 0.5 V  
Power-down mode; VCC = 0 V  
VO = 0 V to VCC  
+4.6  
±20  
+50  
-
V
IO  
output current  
mA  
mA  
mA  
°C  
ICC  
IGND  
Tstg  
Ptot  
supply current  
-
ground current  
-50  
-65  
-
storage temperature  
total power dissipation  
+150  
250  
Tamb = -40 °C to +125 °C  
[2]  
mW  
[1] The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed.  
[2] For SOT353-1 (TSSOP5) package: Ptot derates linearly with 3.3 mW/K above 74 °C.  
©
74AUP1G00_Q100  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2023. All rights reserved  
Product data sheet  
Rev. 3.1 — 11 July 2023  
3 / 14  
 
 
 
 
 
Nexperia  
74AUP1G00-Q100  
Low-power 2-input NAND gate  
9. Recommended operating conditions  
Table 6. Recommended operating conditions  
Symbol Parameter  
Conditions  
Min  
0.8  
0
Max  
3.6  
Unit  
V
VCC  
VI  
supply voltage  
input voltage  
output voltage  
3.6  
V
VO  
Active mode  
0
VCC  
3.6  
V
Power-down mode; VCC = 0 V  
0
V
Tamb  
ambient temperature  
-40  
0
+125  
200  
°C  
ns/V  
Δt/ΔV  
input transition rise and fall rate  
VCC = 0.8 V to 3.6 V  
10. Static characteristics  
Table 7. Static characteristics  
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).  
Symbol Parameter  
Tamb = 25 °C  
Conditions  
Min  
Typ  
Max  
Unit  
VIH  
HIGH-level input voltage  
VCC = 0.8 V  
0.70×VCC  
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
VCC = 0.9 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 3.0 V to 3.6 V  
VCC = 0.8 V  
0.65×VCC  
-
1.6  
-
-
2.0  
VIL  
LOW-level input voltage  
-
-
-
-
0.30×VCC  
0.35×VCC  
0.7  
VCC = 0.9 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 3.0 V to 3.6 V  
0.9  
VOH  
HIGH-level output voltage VI = VIH or VIL  
IO = -20 μA; VCC = 0.8 V to 3.6 V  
VCC - 0.1  
0.75×VCC  
1.11  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
IO = -1.1 mA; VCC = 1.1 V  
IO = -1.7 mA; VCC = 1.4 V  
IO = -1.9 mA; VCC = 1.65 V  
IO = -2.3 mA; VCC = 2.3 V  
IO = -3.1 mA; VCC = 2.3 V  
IO = -2.7 mA; VCC = 3.0 V  
IO = -4.0 mA; VCC = 3.0 V  
1.32  
2.05  
1.9  
2.72  
2.6  
VOL  
LOW-level output voltage VI = VIH or VIL  
IO = 20 μA; VCC = 0.8 V to 3.6 V  
IO = 1.1 mA; VCC = 1.1 V  
IO = 1.7 mA; VCC = 1.4 V  
IO = 1.9 mA; VCC = 1.65 V  
IO = 2.3 mA; VCC = 2.3 V  
IO = 3.1 mA; VCC = 2.3 V  
IO = 2.7 mA; VCC = 3.0 V  
IO = 4.0 mA; VCC = 3.0 V  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.1  
0.3×VCC  
0.31  
V
V
V
V
V
V
V
V
0.31  
0.31  
0.44  
0.31  
0.44  
©
74AUP1G00_Q100  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2023. All rights reserved  
Product data sheet  
Rev. 3.1 — 11 July 2023  
4 / 14  
 
 
Nexperia  
74AUP1G00-Q100  
Low-power 2-input NAND gate  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
±0.1  
±0.2  
±0.2  
Unit  
μA  
II  
input leakage current  
VI = GND to 3.6 V; VCC = 0 V to 3.6 V  
-
-
-
-
-
-
IOFF  
ΔIOFF  
power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V  
μA  
additional power-off  
leakage current  
VI or VO = 0 V to 3.6 V;  
VCC = 0 V to 0.2 V  
μA  
ICC  
supply current  
VI = GND or VCC; IO = 0 A;  
VCC = 0.8 V to 3.6 V  
-
-
0.5  
μA  
ΔICC  
CI  
additional supply current  
input capacitance  
VI = VCC - 0.6 V; IO = 0 A; VCC = 3.3 V  
VCC = 0 V to 3.6 V; VI = GND or VCC  
VO = GND; VCC = 0 V  
[1]  
-
-
-
-
40  
-
μA  
pF  
pF  
0.8  
1.7  
CO  
output capacitance  
-
Tamb = -40 °C to +85 °C  
VIH HIGH-level input voltage  
VCC = 0.8 V  
0.70×VCC  
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
VCC = 0.9 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 3.0 V to 3.6 V  
VCC = 0.8 V  
0.65×VCC  
-
1.6  
-
-
2.0  
VIL  
LOW-level input voltage  
-
-
-
-
0.30×VCC  
0.35×VCC  
0.7  
VCC = 0.9 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 3.0 V to 3.6 V  
0.9  
VOH  
HIGH-level output voltage VI = VIH or VIL  
IO = -20 μA; VCC = 0.8 V to 3.6 V  
VCC - 0.1  
0.7×VCC  
1.03  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
IO = -1.1 mA; VCC = 1.1 V  
IO = -1.7 mA; VCC = 1.4 V  
IO = -1.9 mA; VCC = 1.65 V  
IO = -2.3 mA; VCC = 2.3 V  
IO = -3.1 mA; VCC = 2.3 V  
IO = -2.7 mA; VCC = 3.0 V  
IO = -4.0 mA; VCC = 3.0 V  
1.30  
1.97  
1.85  
2.67  
2.55  
VOL  
LOW-level output voltage VI = VIH or VIL  
IO = 20 μA; VCC = 0.8 V to 3.6 V  
IO = 1.1 mA; VCC = 1.1 V  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.1  
0.3×VCC  
0.37  
V
V
IO = 1.7 mA; VCC = 1.4 V  
V
IO = 1.9 mA; VCC = 1.65 V  
IO = 2.3 mA; VCC = 2.3 V  
0.35  
V
0.33  
V
IO = 3.1 mA; VCC = 2.3 V  
0.45  
V
IO = 2.7 mA; VCC = 3.0 V  
0.33  
V
IO = 4.0 mA; VCC = 3.0 V  
0.45  
V
II  
input leakage current  
VI = GND to 3.6 V; VCC = 0 V to 3.6 V  
±0.5  
μA  
μA  
μA  
IOFF  
ΔIOFF  
power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V  
±0.5  
additional power-off  
leakage current  
VI or VO = 0 V to 3.6 V;  
VCC = 0 V to 0.2 V  
±0.6  
ICC  
supply current  
VI = GND or VCC; IO = 0 A;  
VCC = 0.8 V to 3.6 V  
-
-
-
-
0.9  
50  
μA  
μA  
ΔICC  
additional supply current  
VI = VCC - 0.6 V; IO = 0 A; VCC = 3.3 V  
[1]  
©
74AUP1G00_Q100  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2023. All rights reserved  
Product data sheet  
Rev. 3.1 — 11 July 2023  
5 / 14  
Nexperia  
74AUP1G00-Q100  
Low-power 2-input NAND gate  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Tamb = -40 °C to +125 °C  
VIH  
HIGH-level input voltage  
VCC = 0.8 V  
0.75×VCC  
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
VCC = 0.9 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 3.0 V to 3.6 V  
VCC = 0.8 V  
0.70×VCC  
-
1.6  
-
-
2.0  
VIL  
LOW-level input voltage  
-
-
-
-
0.25×VCC  
0.30×VCC  
0.7  
VCC = 0.9 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 3.0 V to 3.6 V  
0.9  
VOH  
HIGH-level output voltage VI = VIH or VIL  
IO = -20 μA; VCC = 0.8 V to 3.6 V  
VCC - 0.11  
0.6×VCC  
0.93  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
IO = -1.1 mA; VCC = 1.1 V  
IO = -1.7 mA; VCC = 1.4 V  
IO = -1.9 mA; VCC = 1.65 V  
IO = -2.3 mA; VCC = 2.3 V  
IO = -3.1 mA; VCC = 2.3 V  
IO = -2.7 mA; VCC = 3.0 V  
IO = -4.0 mA; VCC = 3.0 V  
1.17  
1.77  
1.67  
2.40  
2.30  
VOL  
LOW-level output voltage VI = VIH or VIL  
IO = 20 μA; VCC = 0.8 V to 3.6 V  
IO = 1.1 mA; VCC = 1.1 V  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.11  
0.33×VCC  
0.41  
V
V
IO = 1.7 mA; VCC = 1.4 V  
V
IO = 1.9 mA; VCC = 1.65 V  
IO = 2.3 mA; VCC = 2.3 V  
0.39  
V
0.36  
V
IO = 3.1 mA; VCC = 2.3 V  
0.50  
V
IO = 2.7 mA; VCC = 3.0 V  
0.36  
V
IO = 4.0 mA; VCC = 3.0 V  
0.50  
V
II  
input leakage current  
VI = GND to 3.6 V; VCC = 0 V to 3.6 V  
±0.75  
±0.75  
±0.75  
μA  
μA  
μA  
IOFF  
ΔIOFF  
power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V  
additional power-off  
leakage current  
VI or VO = 0 V to 3.6 V;  
VCC = 0 V to 0.2 V  
ICC  
supply current  
VI = GND or VCC; IO = 0 A;  
VCC = 0.8 V to 3.6 V  
-
-
-
-
1.4  
75  
μA  
μA  
ΔICC  
additional supply current  
VI = VCC - 0.6 V; IO = 0 A; VCC = 3.3 V  
[1]  
[1] One input at VCC - 0.6 V, other input at VCC or GND.  
©
74AUP1G00_Q100  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2023. All rights reserved  
Product data sheet  
Rev. 3.1 — 11 July 2023  
6 / 14  
 
Nexperia  
74AUP1G00-Q100  
Low-power 2-input NAND gate  
11. Dynamic characteristics  
Table 8. Dynamic characteristics  
Voltages are referenced to GND (ground = 0 V); for test circuit see Fig. 5  
Symbol Parameter  
Conditions  
Min  
Typ [1]  
Max  
Unit  
Tamb = 25 °C; CL = 5 pF  
tpd  
propagation delay  
A, B to Y; see Fig. 4  
VCC = 0.8 V  
[2]  
[2]  
[2]  
[2]  
-
17.5  
5.3  
3.8  
3.1  
2.5  
2.2  
-
ns  
ns  
ns  
ns  
ns  
ns  
VCC = 1.1 V to 1.3 V  
VCC = 1.4 V to 1.6 V  
VCC = 1.65 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 3.0 V to 3.6 V  
2.5  
2.0  
1.6  
1.3  
1.0  
11.0  
6.8  
5.3  
4.0  
3.6  
Tamb = 25 °C; CL = 10 pF  
tpd propagation delay  
A, B to Y; see Fig. 4  
VCC = 0.8 V  
-
21.0  
6.1  
4.4  
3.7  
3.0  
2.8  
-
ns  
ns  
ns  
ns  
ns  
ns  
VCC = 1.1 V to 1.3 V  
VCC = 1.4 V to 1.6 V  
VCC = 1.65 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 3.0 V to 3.6 V  
2.4  
2.4  
2.0  
1.4  
1.3  
13.0  
7.9  
6.2  
4.7  
4.3  
Tamb = 25 °C; CL = 15 pF  
tpd propagation delay  
A, B to Y; see Fig. 4  
VCC = 0.8 V  
-
24.5  
6.9  
5.0  
4.1  
3.5  
3.2  
-
ns  
ns  
ns  
ns  
ns  
ns  
VCC = 1.1 V to 1.3 V  
VCC = 1.4 V to 1.6 V  
VCC = 1.65 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 3.0 V to 3.6 V  
3.4  
2.8  
2.0  
1.7  
1.6  
14.8  
8.9  
7.0  
5.3  
4.9  
Tamb = 25 °C; CL = 30 pF  
tpd propagation delay  
A, B to Y; see Fig. 4  
VCC = 0.8 V  
-
34.8  
9.2  
6.5  
5.4  
4.6  
4.3  
-
ns  
ns  
ns  
ns  
ns  
ns  
VCC = 1.1 V to 1.3 V  
VCC = 1.4 V to 1.6 V  
VCC = 1.65 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 3.0 V to 3.6 V  
4.6  
3.0  
2.6  
2.4  
2.3  
20.1  
11.8  
9.3  
7.1  
6.5  
©
74AUP1G00_Q100  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2023. All rights reserved  
Product data sheet  
Rev. 3.1 — 11 July 2023  
7 / 14  
 
Nexperia  
74AUP1G00-Q100  
Low-power 2-input NAND gate  
Symbol Parameter  
Tamb = 25 °C  
Conditions  
Min  
Typ [1]  
Max  
Unit  
CPD  
power dissipation  
capacitance  
f = 1 MHz; VI = GND to VCC  
VCC = 0.8 V  
[3]  
-
-
-
-
-
-
2.6  
2.8  
2.9  
3.1  
3.6  
4.2  
-
-
-
-
-
-
pF  
pF  
pF  
pF  
pF  
pF  
VCC = 1.1 V to 1.3 V  
VCC = 1.4 V to 1.6 V  
VCC = 1.65 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 3.0 V to 3.6 V  
[1] All typical values are measured at nominal VCC  
.
[2] tpd is the same as tPLH and tPHL  
.
[3] CPD is used to determine the dynamic power dissipation (PD in μW).  
PD = CPD × VCC 2 × fi × N + Σ(CL × VCC 2 × fo) where:  
fi = input frequency in MHz;  
fo = output frequency in MHz;  
CL = output load capacitance in pF;  
VCC = supply voltage in V;  
N = number of inputs switching;  
Σ(CL × VCC 2 × fo) = sum of the outputs.  
Table 9. Dynamic characteristics  
Voltages are referenced to GND (ground = 0 V); for test circuit see Fig. 5  
Symbol Parameter  
Conditions  
-40 °C to +85 °C  
-40 °C to +125 °C Unit  
Min  
Max  
Min  
Max  
CL = 5 pF  
tpd  
propagation delay  
A, B to Y; see Fig. 4  
VCC = 1.1 V to 1.3 V  
VCC = 1.4 V to 1.6 V  
VCC = 1.65 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 3.0 V to 3.6 V  
[1]  
[1]  
[1]  
2.1  
1.8  
1.4  
1.1  
1.0  
12.2  
7.8  
6.2  
4.7  
4.2  
2.1  
1.8  
1.4  
1.1  
1.0  
13.5  
8.6  
6.9  
5.2  
4.7  
ns  
ns  
ns  
ns  
ns  
CL = 10 pF  
tpd  
propagation delay  
A, B to Y; see Fig. 4  
VCC = 1.1 V to 1.3 V  
VCC = 1.4 V to 1.6 V  
VCC = 1.65 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 3.0 V to 3.6 V  
2.2  
2.2  
1.9  
1.3  
1.2  
14.4  
9.2  
7.3  
5.6  
4.9  
2.2  
2.2  
1.9  
1.3  
1.2  
15.9  
10.2  
8.1  
ns  
ns  
ns  
ns  
ns  
6.2  
5.4  
CL = 15 pF  
tpd  
propagation delay  
A, B to Y; see Fig. 4  
VCC = 1.1 V to 1.3 V  
VCC = 1.4 V to 1.6 V  
VCC = 1.65 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 3.0 V to 3.6 V  
3.1  
2.5  
2.0  
1.5  
1.4  
16.5  
10.5  
8.3  
3.1  
2.5  
2.0  
1.5  
1.4  
18.2  
11.6  
9.2  
ns  
ns  
ns  
ns  
ns  
6.4  
7.1  
5.7  
6.3  
©
74AUP1G00_Q100  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2023. All rights reserved  
Product data sheet  
Rev. 3.1 — 11 July 2023  
8 / 14  
 
Nexperia  
74AUP1G00-Q100  
Low-power 2-input NAND gate  
Symbol Parameter  
CL = 30 pF  
Conditions  
-40 °C to +85 °C  
-40 °C to +125 °C Unit  
Min  
Max  
Min  
Max  
tpd  
propagation delay  
A, B to Y; see Fig. 4  
VCC = 1.1 V to 1.3 V  
VCC = 1.4 V to 1.6 V  
VCC = 1.65 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 3.0 V to 3.6 V  
[1]  
4.1  
2.9  
2.3  
2.1  
2.1  
22.6  
14.0  
11.1  
8.5  
4.1  
2.9  
2.3  
2.1  
2.1  
24.9  
15.4  
12.3  
9.4  
ns  
ns  
ns  
ns  
ns  
7.6  
8.4  
[1] tpd is the same as tPLH and tPHL  
.
11.1. Waveforms and test circuit  
V
I
V
A, B input  
GND  
M
t
t
PHL  
PLH  
V
OH  
V
Y output  
M
mna612  
V
OL  
Measurement points are given in Table 10.  
Logic levels: VOL and VOH are typical output voltage drop that occur with the output load.  
Fig. 4. The data input (A or B) to output (Y) propagation delays  
Table 10. Measurement points  
Supply voltage  
VCC  
Input  
VM  
Output  
VM  
0.5 × VCC  
VI  
tr = tf  
0.8 V to 3.6 V  
0.5 × VCC  
VCC  
≤ 3.0 ns  
V
V
EXT  
CC  
5 kΩ  
V
I
V
O
G
DUT  
R
T
C
L
R
L
001aac521  
Test data is given in Table 11.  
Definitions for test circuit:  
RL = Load resistance;  
CL = Load capacitance including jig and probe capacitance;  
RT = Termination resistance should be equal to the output impedance Zo of the pulse generator;  
VEXT = External voltage for measuring switching times.  
Fig. 5. Test circuit for measuring switching times  
©
74AUP1G00_Q100  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2023. All rights reserved  
Product data sheet  
Rev. 3.1 — 11 July 2023  
9 / 14  
 
 
 
 
 
Nexperia  
74AUP1G00-Q100  
Low-power 2-input NAND gate  
Table 11. Test data  
Supply voltage  
Load  
VEXT  
VCC  
CL  
RL [1]  
tPLH, tPHL  
tPZH, tPHZ  
tPZL, tPLZ  
0.8 V to 3.6 V  
5 pF, 10 pF, 15 pF and 30 pF  
5 kΩ or 1 MΩ open  
GND  
2 × VCC  
[1] For measuring enable and disable times RL = 5 kΩ.  
For measuring propagation delays, setup and hold times and pulse width RL = 1 MΩ.  
©
74AUP1G00_Q100  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2023. All rights reserved  
Product data sheet  
Rev. 3.1 — 11 July 2023  
10 / 14  
 
Nexperia  
74AUP1G00-Q100  
Low-power 2-input NAND gate  
12. Package outline  
TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1.25 mm  
SOT353-1  
D
B
E
A
X
c
(5x)  
y
H
E
v
M
A
e
1
5
4
pin 1 index  
A
A
2
A
1
1
2
3
A
3
θ
L
w
M B  
p
b
p
(5x)  
detail X  
e
e
0
3 mm  
scale  
Dimensions (mm are the original dimensions)  
Unit  
(1)  
(1)  
A
A
A
A
b
c
D
E
e
e
1
H
E
L
p
v
w
y
θ
1
2
3
p
max 1.1 0.1 1.0  
0.8 0.8  
0.30 0.25 2.2 1.35  
0.15 0.08 1.8 1.15  
2.4 0.46  
1.8 0.26  
8°  
0°  
mm  
0.15  
0.65 1.3  
0.3 0.1 0.1  
0
min  
Note  
1. Plastic or metal protrusions of 0.2 mm maximum per side are not included.  
sot353-1_po  
References  
Outline  
version  
European  
projection  
Issue date  
IEC  
JEDEC  
JEITA  
21-12-15  
21-12-16  
SOT353-1  
SC-88A  
MO-203  
Fig. 6. Package outline SOT353-1 (TSSOP5)  
©
74AUP1G00_Q100  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2023. All rights reserved  
Product data sheet  
Rev. 3.1 — 11 July 2023  
11 / 14  
 
 
Nexperia  
74AUP1G00-Q100  
Low-power 2-input NAND gate  
13. Abbreviations  
Table 12. Abbreviations  
Acronym  
Description  
DUT  
ESD  
HBM  
Device Under Test  
ElectroStatic Discharge  
Human Body Model  
14. Revision history  
Table 13. Revision history  
Document ID  
Release date  
20230711  
Data sheet status  
Change notice Supersedes  
- 74AUP1G00_Q100 v.2  
74AUP1G00_Q100 v.3.1  
Modifications:  
Product data sheet  
Section 2: ESD specification updated according to the latest JEDEC standard.  
20220113 Product data sheet 74AUP1G00_Q100 v.1  
Section 1 and Section 2 updated.  
74AUP1G00_Q100 v.2  
Modifications:  
-
Table 5: Derating values for Ptot total power dissipation updated.  
Fig. 6: Package outline drawing for SOT353-1 (TSSOP5) has changed.  
74AUP1G00_Q100 v.1  
20190404  
Product data sheet  
-
-
©
74AUP1G00_Q100  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2023. All rights reserved  
Product data sheet  
Rev. 3.1 — 11 July 2023  
12 / 14  
 
 
Nexperia  
74AUP1G00-Q100  
Low-power 2-input NAND gate  
equipment, nor in applications where failure or malfunction of an Nexperia  
product can reasonably be expected to result in personal injury, death or  
severe property or environmental damage. Nexperia and its suppliers accept  
no liability for inclusion and/or use of Nexperia products in such equipment or  
applications and therefore such inclusion and/or use is at the customer's own  
risk.  
15. Legal information  
Data sheet status  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Document status Product  
Definition  
[1][2]  
status [3]  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. Nexperia makes no representation  
or warranty that such applications will be suitable for the specified use  
without further testing or modification.  
Objective [short]  
data sheet  
Development  
This document contains data from  
the objective specification for  
product development.  
Preliminary [short]  
data sheet  
Qualification  
Production  
This document contains data from  
the preliminary specification.  
Customers are responsible for the design and operation of their applications  
and products using Nexperia products, and Nexperia accepts no liability for  
any assistance with applications or customer product design. It is customer’s  
sole responsibility to determine whether the Nexperia product is suitable  
and fit for the customer’s applications and products planned, as well as  
for the planned application and use of customer’s third party customer(s).  
Customers should provide appropriate design and operating safeguards to  
minimize the risks associated with their applications and products.  
Product [short]  
data sheet  
This document contains the product  
specification.  
[1] Please consult the most recently issued document before initiating or  
completing a design.  
[2] The term 'short data sheet' is explained in section "Definitions".  
[3] The product status of device(s) described in this document may have  
changed since this document was published and may differ in case of  
multiple devices. The latest product status information is available on  
the internet at https://www.nexperia.com.  
Nexperia does not accept any liability related to any default, damage, costs  
or problem which is based on any weakness or default in the customer’s  
applications or products, or the application or use by customer’s third party  
customer(s). Customer is responsible for doing all necessary testing for the  
customer’s applications and products using Nexperia products in order to  
avoid a default of the applications and the products or of the application or  
use by customer’s third party customer(s). Nexperia does not accept any  
liability in this respect.  
Definitions  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. Nexperia does not give any representations or  
warranties as to the accuracy or completeness of information included herein  
and shall have no liability for the consequences of use of such information.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those  
given in the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is  
intended for quick reference only and should not be relied upon to contain  
detailed and full information. For detailed and full information see the relevant  
full data sheet, which is available on request via the local Nexperia sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Terms and conditions of commercial sale — Nexperia products are  
sold subject to the general terms and conditions of commercial sale, as  
published at http://www.nexperia.com/profile/terms, unless otherwise agreed  
in a valid written individual agreement. In case an individual agreement is  
concluded only the terms and conditions of the respective agreement shall  
apply. Nexperia hereby expressly objects to applying the customer’s general  
terms and conditions with regard to the purchase of Nexperia products by  
customer.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
Nexperia and its customer, unless Nexperia and customer have explicitly  
agreed otherwise in writing. In no event however, shall an agreement be  
valid in which the Nexperia product is deemed to offer functions and qualities  
beyond those described in the Product data sheet.  
No offer to sell or license — Nothing in this document may be interpreted  
or construed as an offer to sell products that is open for acceptance or the  
grant, conveyance or implication of any license under any copyrights, patents  
or other industrial or intellectual property rights.  
Disclaimers  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
Limited warranty and liability — Information in this document is believed  
to be accurate and reliable. However, Nexperia does not give any  
representations or warranties, expressed or implied, as to the accuracy  
or completeness of such information and shall have no liability for the  
consequences of use of such information. Nexperia takes no responsibility  
for the content in this document if provided by an information source outside  
of Nexperia.  
Translations — A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
In no event shall Nexperia be liable for any indirect, incidental, punitive,  
special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal  
or replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Trademarks  
Notice: All referenced brands, product names, service names and  
trademarks are the property of their respective owners.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, Nexperia’s aggregate and cumulative liability towards customer  
for the products described herein shall be limited in accordance with the  
Terms and conditions of commercial sale of Nexperia.  
Right to make changes — Nexperia reserves the right to make changes  
to information published in this document, including without limitation  
specifications and product descriptions, at any time and without notice. This  
document supersedes and replaces all information supplied prior to the  
publication hereof.  
Suitability for use in automotive applications — This Nexperia product  
has been qualified for use in automotive applications. Unless otherwise  
agreed in writing, the product is not designed, authorized or warranted to  
be suitable for use in life support, life-critical or safety-critical systems or  
©
74AUP1G00_Q100  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2023. All rights reserved  
Product data sheet  
Rev. 3.1 — 11 July 2023  
13 / 14  
 
Nexperia  
74AUP1G00-Q100  
Low-power 2-input NAND gate  
Contents  
1. General description......................................................1  
2. Features and benefits.................................................. 1  
3. Ordering information....................................................2  
4. Marking..........................................................................2  
5. Functional diagram.......................................................2  
6. Pinning information......................................................2  
6.1. Pinning.........................................................................2  
6.2. Pin description.............................................................3  
7. Functional description................................................. 3  
8. Limiting values............................................................. 3  
9. Recommended operating conditions..........................4  
10. Static characteristics..................................................4  
11. Dynamic characteristics.............................................7  
11.1. Waveforms and test circuit........................................ 9  
12. Package outline........................................................ 11  
13. Abbreviations............................................................12  
14. Revision history........................................................12  
15. Legal information......................................................13  
© Nexperia B.V. 2023. All rights reserved  
For more information, please visit: http://www.nexperia.com  
For sales office addresses, please send an email to: salesaddresses@nexperia.com  
Date of release: 11 July 2023  
©
74AUP1G00_Q100  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2023. All rights reserved  
Product data sheet  
Rev. 3.1 — 11 July 2023  
14 / 14  

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