BC807-16H [NEXPERIA]

45 V, 500 mA PNP general-purpose transistorsProduction;
BC807-16H
型号: BC807-16H
厂家: Nexperia    Nexperia
描述:

45 V, 500 mA PNP general-purpose transistorsProduction

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中文:  中文翻译
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BC807H series  
45 V, 500 mA PNP general-purpose transistors  
Rev. 1 — 5 March 2019  
Product data sheet  
1. Product profile  
1.1. General description  
PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD)  
plastic package.  
Table 1. Product overview  
Type number  
Package  
Nexperia  
SOT23  
NPN comlement  
JEDEC  
BC807-16H  
BC807-25H  
BC807-40H  
TO-236AB  
BC817K-16H  
BC817K-25H  
BC817K-40H  
1.2. Features and benefits  
Three current gain selections  
High-temperature applications up to 175 °C  
AEC-Q101 qualified  
1.3. Applications  
General-purpose switching and amplification  
1.4. Quick reference data  
Table 2. Quick reference data  
Tamb = 25 °C unless otherwise specified.  
Symbol  
VCEO  
IC  
Parameter  
Conditions  
Min  
Typ  
Max  
-45  
-500  
-1  
Unit  
V
collector-emitter voltage  
collector current  
peak collector current  
DC current gain  
BC807-16H  
open base  
-
-
-
-
-
-
mA  
A
ICM  
single pulse; tp ≤ 1 ms  
hFE  
VCE = -1 V; IC = -100 mA  
[1]  
[1]  
[1]  
100  
160  
250  
-
-
-
250  
400  
600  
BC807-25H  
BC807-40H  
[1] pulsed; tp ≤ 300 μs; δ ≤ 0.02  
 
 
 
 
 
 
Nexperia  
BC807H series  
45 V, 500 mA PNP general-purpose transistors  
2. Pinning information  
Table 3. Pinning  
Pin  
1
Symbol  
Description  
base  
Simplified outline  
Graphic symbol  
3
B
E
C
C
2
emitter  
B
3
collector  
E
sym132  
1
2
3. Ordering information  
Table 4. Ordering information  
Type number  
Package  
Name  
Description  
Version  
BC807-16H  
BC807-25H  
BC807-40H  
TO-236AB  
plastic, surface-mounted package; 3 leads  
SOT23  
4. Marking  
Table 5. Marking  
Type number  
Marking code  
[1] 6S%  
BC807-16H  
BC807-25H  
BC807-40H  
[1] 6T%  
[1] 6U%  
[1] % = placeholder for manufacturing site code  
©
BC807H_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2019. All rights reserved  
Product data sheet  
Rev. 1 — 5 March 2019  
2 / 21  
 
 
 
 
Nexperia  
BC807H series  
45 V, 500 mA PNP general-purpose transistors  
5. Limiting values  
Table 6. Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Tamb = 25 °C unless otherwise specified.  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Conditions  
open emitter  
open base  
Min  
Max  
-50  
Unit  
V
collector-base voltage  
collector-emitter voltage  
emitter-base voltage  
collector current  
-
-
-45  
V
open collector  
-
-7  
V
-
-500  
-1  
mA  
A
ICM  
peak collector current  
peak base current  
total power dissipation  
single pulse; tp ≤ 1 ms  
single pulse; tp ≤ 1 ms  
Tamb ≤ 25 °C  
-
IBM  
-
-200  
320  
440  
460  
540  
175  
175  
175  
mA  
mW  
mW  
mW  
mW  
°C  
Ptot  
[1]  
[2]  
[3]  
[4]  
-
-
-
-
Tj  
junction temperature  
ambient temperature  
storage temperature  
-
Tamb  
Tstg  
-55  
-65  
°C  
°C  
[1] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated and standard footprint.  
[2] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated; mounting pad for collector 1 cm2.  
[3] Device mounted on an FR4 Printed-Circuit-Board (PCB); 4-layer copper; tin plated and standard footprint.  
[4] Device mounted on an FR4 Printed-Circuit-Board (PCB); 4-layer copper; tin-plated; mounting pad for collector 1 cm.2  
aaa-029554  
600  
(1)  
P
tot  
(mW)  
(2)  
(3)  
400  
(4)  
200  
0
-75  
25  
125  
225  
T
(°C)  
amb  
1. FR4 PCB; 4-layer copper, 1cm2  
2. FR4 PCB; 4-layer copper, standard footprint  
3. FR4 PCB; single-sided copper, 1cm2  
4. FR4 PCB; single-sided copper, standard footprint  
Fig. 1. Power derating curves  
©
BC807H_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2019. All rights reserved  
Product data sheet  
Rev. 1 — 5 March 2019  
3 / 21  
 
 
Nexperia  
BC807H series  
45 V, 500 mA PNP general-purpose transistors  
aaa-029555  
-10  
I
C
(A)  
-1  
-1  
t
t
t
= 100 µs  
= 1 ms  
p
p
p
-10  
-10  
-10  
= 10 ms  
t
t
= 100 ms  
= 1 s  
p
p
-2  
DC; FR4 PCB, 4-layer copper;  
collector mounting pad 1 cm  
2
DC  
-3  
-2  
-10  
-1  
-10  
2
3
-1  
-10  
-10  
-10  
V
(V)  
CE  
FR4 PCB; single-sided copper; standard footprint  
Tamb = 25 °C  
Fig. 2. Safe operating area; junction to ambient; continous and peak collector currents as a funtion of collecor-  
emitter voltage  
©
BC807H_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2019. All rights reserved  
Product data sheet  
Rev. 1 — 5 March 2019  
4 / 21  
Nexperia  
BC807H series  
45 V, 500 mA PNP general-purpose transistors  
6. Thermal characteristics  
Table 7. Thermal characteristics  
Tamb = 25 °C unless otherwise specified.  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
470  
340  
325  
280  
110  
Unit  
K/W  
K/W  
K/W  
K/W  
K/W  
Rth(j-a)  
thermal resistance from junction to ambient  
in free air  
[1]  
[2]  
[3]  
[4]  
-
-
-
-
-
-
R(j-sp)  
thermal resistance from junction to solder point  
[1] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated and standard footprint.  
[2] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated; mounting pad for collector 1 cm2.  
[3] Device mounted on an FR4 Printed-Circuit-Board (PCB); 4-layer copper; tin-plated and standard footprint.  
[4] Device mounted on an FR4 Printed-Circuit-Board (PCB); 4-layer copper; tin-plated; mounting pad for collector 1 cm2.  
aaa-029556  
3
10  
duty cycle = 1  
Z
th(j-a)  
(K/W)  
0.75  
0.50  
0.20  
0.33  
2
10  
0.10  
0.02  
0.05  
0.01  
10  
0
1
-1  
10  
-5  
-4  
-3  
10  
-2  
-1  
2
3
10  
10  
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB; single-sided copper; tin-plated and standard footprint  
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values  
aaa-029557  
3
10  
Z
duty cycle = 1  
th(j-a)  
(K/W)  
0.75  
0.50  
2
10  
0.33  
0.20  
0.10  
0.05  
10  
0.02  
0.01  
0
1
10  
-5  
-4  
-3  
-2  
10  
-1  
2
3
10  
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB; single-sided copper; tin-plated; mounting pad for collector 1 cm2  
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values  
©
BC807H_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2019. All rights reserved  
Product data sheet  
Rev. 1 — 5 March 2019  
5 / 21  
 
 
Nexperia  
BC807H series  
45 V, 500 mA PNP general-purpose transistors  
aaa-029558  
3
10  
Z
th(j-a)  
(K/W)  
duty cycle = 1  
0.75  
0.50  
0.33  
2
10  
0.20  
0.10  
0.05  
10  
0.02  
0.01  
0
1
10  
-5  
-4  
-3  
-2  
10  
-1  
2
3
10  
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB; 4-layer copper; tin-plated and standard footprint  
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values  
aaa-029559  
3
10  
Z
th(j-a)  
(K/W)  
duty cycle = 1  
0.75  
0.50  
0.33  
2
10  
0.20  
0.10  
0.05  
10  
0.02  
0.01  
0
1
10  
-5  
-4  
-3  
-2  
10  
-1  
2
3
10  
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB; 4-layer copper; tin-plated; mounting pad for collector 1 cm2  
Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values  
©
BC807H_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2019. All rights reserved  
Product data sheet  
Rev. 1 — 5 March 2019  
6 / 21  
Nexperia  
BC807H series  
45 V, 500 mA PNP general-purpose transistors  
7. Characteristics  
Table 8. Characteristics  
Tamb = 25 °C unless otherwise specified.  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max Unit  
V(BR)CBO  
collector-base  
breakdown voltage  
IC = -100 µA; IE = 0 A  
-50  
-
-
-
-
V
V
V
V(BR)CEO  
V(BR)EBO  
ICBO  
collector-emitter  
breakdown voltage  
IC = -10 mA; IB = 0 A  
IE = -100 µA; IC = 0 A  
-45  
-7  
-
-
emitter-base  
breakdown voltage  
collector-base  
cut-off current  
VCB = -25 V; IE = 0 A  
-
-
-
-
-
-
-100 nA  
-5 μA  
VCB = -25 V; IE = 0 A; Tj = 150 °C  
VEB = -5 V; IC = 0 A  
IEBO  
hFE  
emitter-base  
cut-off current  
-100 nA  
DC current gain  
BC807-16H  
VCE = -1 V; IC = -100 mA  
[1] 100  
[1] 160  
[1] 250  
[1] 40  
-
-
-
-
-
250  
BC807-25H  
400  
BC807-40H  
600  
DC current gain  
VCE = -1 V; IC = -500 mA  
IC = -500 mA; IB = -50 mA  
-
VCEsat  
VBEsat  
collector-emitter  
saturation voltage  
[1]  
[1]  
[1]  
-
-700 mV  
base-emitter saturation IC = -500 mA; IB = -50 mA  
voltage  
-1.2  
V
VBE  
fT  
base-emitter voltage  
transition frequency  
collector capacitance  
emitter capacitance  
BC807-16H  
VCE = -1 V; IC = -500 mA  
-
-
-1.2  
V
VCE = -5 V; IC = -10 mA; f = 100 MHz  
VCB = -10 V; IE = ie = 0 A; f = 1 MHz  
VEB = -0.5 V; IC = ic = 0 A; f = 1 MHz  
80  
-
-
-
-
MHz  
pF  
Cc  
Ce  
7
50  
45  
37  
pf  
BC807-25H  
pF  
pF  
BC807-40H  
[1] pulsed; tp ≤ 300 μs; δ ≤ 0.02  
©
BC807H_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2019. All rights reserved  
Product data sheet  
Rev. 1 — 5 March 2019  
7 / 21  
 
 
Nexperia  
BC807H series  
45 V, 500 mA PNP general-purpose transistors  
aaa-029560  
aaa-027433  
400  
200  
h
h
FE  
FE  
(1)  
300  
150  
100  
50  
(2)  
(4)  
(3)  
(5)  
(1)  
(2)  
(3)  
200  
100  
0
(6)  
(8)  
(7)  
0
-10  
-1  
-10  
2
3
-1  
2
3
-1  
-10  
-10  
-10  
-1  
-10  
-10  
-10  
I
(mA)  
I (mA)  
C
C
VCE = -1 V  
Tamb = 25 °C  
(1) VCE = -5 V  
(2) VCE = -2 V  
(3) VCE = -1 V  
(1) Tamb = 175 °C  
(2) Tamb = 150 °C  
(3) Tamb = 125 °C  
(4) Tamb = 100 °C  
(5) Tamb = 85 °C  
(6) Tamb = 25 °C  
(7) Tamb = -40 °C  
(8) Tamb = -55 °C  
Fig. 8. BC807-16H: DC current gain as a function of  
collector current; typical values  
Fig. 7. BC807-16H: DC current gain as a function of  
collector current; typical values  
aaa-029561  
aaa-027435  
-1.2  
-1  
V
BE  
(V)  
V
BE  
(V)  
-0.9  
(1)  
(2)  
(3)  
-0.8  
(1)  
(3)  
(2)  
-0.8  
-0.7  
-0.6  
-0.5  
(4)  
(6)  
(8)  
-0.4  
(5)  
(7)  
0
-1  
-10  
2
3
-1  
-10  
2
3
-1  
-10  
-10  
-10  
-1  
-10  
-10  
-10  
I
(mA)  
I (mA)  
C
C
VCE = -1 V  
Tamb = 25 °C  
(1) VCE = -1 V  
(2) VCE = -2 V  
(3) VCE = -5 V  
(1) Tamb = -55 °C  
(2) Tamb = -40 °C  
(3) Tamb = 25 °C  
(4) Tamb = 85 °C  
(5) Tamb = 100 °C  
(6) Tamb = 125 °C  
(7) Tamb = 150 °C  
(8) Tamb = 175 °C  
Fig. 10. BC807-16H: Base-emitter voltage as a function  
of collector current; typical values  
Fig. 9. BC807-16H: Base-emitter voltage as a function  
of collector current; typical values  
©
BC807H_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2019. All rights reserved  
Product data sheet  
Rev. 1 — 5 March 2019  
8 / 21  
Nexperia  
BC807H series  
45 V, 500 mA PNP general-purpose transistors  
aaa-029562  
aaa-027437  
-1.2  
-1  
V
BEsat  
(V)  
V
BEsat  
(V)  
-0.9  
(1)  
(2)  
(3)  
(4)  
-0.8  
-0.4  
0
(2)  
(1)  
(3)  
-0.8  
-0.7  
-0.6  
-0.5  
(4)  
(6)  
(5)  
(7)  
(8)  
-1  
-10  
2
3
-1  
-10  
2
3
-1  
-10  
-10  
-10  
-1  
-10  
-10  
-10  
I
(mA)  
I (mA)  
C
C
IC / IB = 10  
Tamb = 25 °C  
(1) Tamb = -55 °C  
(2) Tamb = -40 °C  
(3) Tamb = 25 °C  
(4) Tamb = 85 °C  
(5) Tamb = 100 °C  
(6) Tamb = 125 °C  
(7) Tamb = 150 °C  
(8) Tamb = 175 °C  
(1) IC / IB = 10  
(2) IC / IB = 20  
(3) IC / IB = 50  
(4) IC / IB = 100  
Fig. 12. BC807-16H: Base-emitter saturation voltage as  
a function of collector current; typical values  
Fig. 11. BC807-16H: Base-emitter saturation voltage as  
a function of collector current; typical values  
aaa-029563  
aaa-027439  
-1  
-1  
V
V
CEsat  
(V)  
CEsat  
(V)  
-1  
-1  
-10  
-10  
(1)  
(2)  
(1)  
(2)  
(3)  
(4)  
(3)  
(4)  
-2  
-2  
-10  
-10  
-1  
2
3
-1  
2
3
-10  
-1  
-10  
-10  
-10  
-10  
-1  
-10  
-10  
-10  
I
(mA)  
I (mA)  
C
C
IC / IB = 10  
Tamb = 25 °C  
(1) Tamb = 175 °C  
(2) Tamb = 85 °C  
(3) Tamb = 25 °C  
(4) Tamb = -40 °C  
(1) IC / IB = 100  
(2) IC / IB = 50  
(3) IC / IB = 20  
(4) IC / IB = 10  
Fig. 13. BC807-16H: Collector-emitter saturation voltage Fig. 14. BC807-16H: Collector-emitter saturation voltage  
as a function of collector current; typical values  
as a function of collector current; typical values  
©
BC807H_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2019. All rights reserved  
Product data sheet  
Rev. 1 — 5 March 2019  
9 / 21  
Nexperia  
BC807H series  
45 V, 500 mA PNP general-purpose transistors  
aaa-027440  
aaa-027441  
-1.0  
25  
I
(mA) = -15.0  
B
-13.5  
I
C
c
C
(A)  
(pF)  
-12.0  
-10.5  
-7.5  
-0.8  
20  
-9.0  
-6.0  
-0.6  
-0.4  
-0.2  
0
15  
10  
5
-4.5  
-1.5  
-3.0  
0
0
-1  
-2  
-3  
-4  
V
-5  
0
-10  
-20  
-30  
-40  
V
-50  
(V)  
(V)  
CE  
CB  
Tamb = 25 °C  
f = 1 MHz  
Tamb = 25 °C  
Fig. 15. BC807-16H: Collector current as a function of  
collector-emitter voltage; typical values  
Fig. 16. BC807-16H: Collector capacitance as a function  
of collector-base voltage; typical values  
aaa-027442  
aaa-027443  
3
70  
10  
C
e
(pF)  
60  
f
T
(MHz)  
50  
40  
30  
20  
10  
0
(1)  
(2)  
2
10  
10  
2
3
0
-1  
-2  
-3  
-4  
-5  
-1  
-10  
-10  
-10  
V
(V)  
I
(mA)  
C
EB  
f = 1 MHz  
f = 1 MHz  
Tamb = 25 °C  
Tamb = 25 °C  
(1) VCE = -5 V  
(2) VCE = -1 V  
Fig. 17. BC807-16H: Emitter capacitance as a function  
of emitter-base voltage; typical values  
Fig. 18. BC807-16H: Transition frequency as a function  
of collector current; typical values  
©
BC807H_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2019. All rights reserved  
Product data sheet  
Rev. 1 — 5 March 2019  
10 / 21  
Nexperia  
BC807H series  
45 V, 500 mA PNP general-purpose transistors  
aaa-029564  
aaa-027445  
600  
400  
h
FE  
h
FE  
(1)  
(2)  
(4)  
300  
200  
100  
0
(3)  
(5)  
400  
(1)  
(2)  
(3)  
(6)  
(8)  
200  
(7)  
0
-1  
-10  
2
3
-1  
-10  
2
3
-1  
-10  
-10  
-10  
-1  
-10  
-10  
-10  
I
(mA)  
I (mA)  
C
C
VCE = -1 V  
Tamb = 25 °C  
(1) VCE = -5 V  
(2) VCE = -2 V  
(3) VCE = -1 V  
(1) Tamb = 175 °C  
(2) Tamb = 150 °C  
(3) Tamb = 125 °C  
(4) Tamb = 100 °C  
(5) Tamb = 85 °C  
(6) Tamb = 25 °C  
(7) Tamb = -40 °C  
(8) Tamb = -55 °C  
Fig. 20. BC807-25H: DC current gain as a function of  
collector current; typical values  
Fig. 19. BC807-25H: DC current gain as a function of  
collector current; typical values  
aaa-029565  
aaa-027447  
-1.2  
-1.0  
V
BE  
(V)  
V
BE  
(V)  
(1)  
(2)  
-0.9  
-0.8  
(3)  
(1)  
(3)  
(2)  
-0.8  
-0.7  
-0.6  
-0.5  
(4)  
(6)  
-0.4  
(5)  
(7)  
(8)  
-0  
-1  
-10  
2
3
-1  
-10  
2
3
-1  
-10  
-10  
-10  
-1  
-10  
-10  
-10  
I
(mA)  
I (mA)  
C
C
VCE = -1 V  
Tamb = 25 °C  
(1) VCE = -1 V  
(2) VCE = -2 V  
(3) VCE = -5 V  
(1) Tamb = -55 °C  
(2) Tamb = -40 °C  
(3) Tamb = 25 °C  
(4) Tamb = 85 °C  
(5) Tamb = 100 °C  
(6) Tamb = 125 °C  
(7) Tamb = 150 °C  
(8) Tamb = 175 °C  
Fig. 22. BC807-25H: Base-emitter voltage as a function  
of collector current; typical values  
Fig. 21. BC807-25H: Base-emitter voltage as a function  
of collector current; typical values  
©
BC807H_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2019. All rights reserved  
Product data sheet  
Rev. 1 — 5 March 2019  
11 / 21  
Nexperia  
BC807H series  
45 V, 500 mA PNP general-purpose transistors  
aaa-029566  
aaa-027449  
-1.2  
-1.0  
V
BEsat  
(V)  
V
BEsat  
(V)  
-0.9  
(1)  
(2)  
(3)  
(4)  
-0.8  
-0.4  
0
(2)  
(1)  
(3)  
-0.8  
-0.7  
-0.6  
-0.5  
(4)  
(6)  
(5)  
(7)  
(8)  
-1  
-10  
2
3
-1  
-10  
2
3
-1  
-10  
-10  
-10  
-1  
-10  
-10  
-10  
I
(mA)  
I (mA)  
C
C
IC / IB = 10  
Tamb = 25 °C  
(1) Tamb = -55 °C  
(2) Tamb = -40 °C  
(3) Tamb = 25 °C  
(4) Tamb = 85 °C  
(5) Tamb = 100 °C  
(6) Tamb = 125 °C  
(7) Tamb = 150 °C  
(8) Tamb = 175 °C  
(1) IC / IB = 10  
(2) IC / IB = 20  
(3) IC / IB = 50  
(4) IC / IB = 100  
Fig. 24. BC807-25H: Base-emitter saturation voltage as  
a function of collector current; typical values  
Fig. 23. BC807-25H: Base-emitter saturation voltage as  
a function of collector current; typical values  
aaa-029567  
aaa-027451  
-1  
-1  
V
CEsat  
(V)  
V
CEsat  
(V)  
-1  
-10  
-10  
-10  
(1)  
(2)  
(3)  
(4)  
-1  
-10  
(1)  
(2)  
-2  
(3)  
(4)  
-3  
-1  
-10  
-2  
-10  
2
3
-1  
2
3
-1  
-10  
-10  
-10  
-10  
-1  
-10  
-10  
-10  
I
(mA)  
I (mA)  
C
C
IC / IB = 10  
Tamb = 25 °C  
(1) Tamb = 175 °C  
(2) Tamb = 85 °C  
(3) Tamb = 25 °C  
(4) Tamb = -40 °C  
(1) IC / IB = 100  
(2) IC / IB = 50  
(3) IC / IB = 20  
(4) IC / IB = 10  
Fig. 25. BC807-25H: Collector-emitter saturation voltage Fig. 26. BC807-25H: Collector-emitter saturation voltage  
as a function of collector current; typical values  
as a function of collector current; typical values  
©
BC807H_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2019. All rights reserved  
Product data sheet  
Rev. 1 — 5 March 2019  
12 / 21  
Nexperia  
BC807H series  
45 V, 500 mA PNP general-purpose transistors  
aaa-027452  
aaa-027453  
-1.0  
25  
I
(mA) = -11.0  
B
-9.9  
I
C
c
C
(A)  
(pF)  
-8.8  
-7.7  
-5.5  
-0.8  
20  
-6.6  
-4.4  
-0.6  
-0.4  
-0.2  
0
15  
10  
5
-3.3  
-1.1  
-2.2  
0
0
-1  
-2  
-3  
-4  
-5  
0
-10  
-20  
-30  
-40  
V
-50  
(V)  
V
(V)  
CE  
CB  
Tamb = 25 °C  
f = 1 MHz  
Tamb = 25 °C  
Fig. 27. BC807-25H: Collector current as a function of  
collector-emitter voltage; typical values  
Fig. 28. BC807-25H: Collector capacitance as a function  
of collector-base voltage; typical values  
aaa-027454  
aaa-027455  
3
60  
10  
C
e
(pF)  
f
T
(MHz)  
40  
(1)  
2
10  
(2)  
20  
0
10  
2
-10  
3
0
-1  
-2  
-3  
-4  
-5  
-1  
-10  
-10  
V
(V)  
I (mA)  
C
EB  
f = 1 MHz  
f = 1 MHz  
Tamb = 25 °C  
Tamb = 25 °C  
(1) VCE = -5 V  
(2) VCE = -1 V  
Fig. 29. BC807-25H: Emitter capacitance as a function  
of emitter-base voltage; typical values  
Fig. 30. BC807-25H: Transition frequency as a function  
of collector current; typical values  
©
BC807H_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2019. All rights reserved  
Product data sheet  
Rev. 1 — 5 March 2019  
13 / 21  
Nexperia  
BC807H series  
45 V, 500 mA PNP general-purpose transistors  
aaa-029568  
aaa-027457  
1200  
800  
h
FE  
h
FE  
(1)  
(2)  
(3)  
900  
600  
400  
200  
0
(1)  
(2)  
(3)  
(4)  
(5)  
600  
300  
(6)  
(7)  
(8)  
-1  
-10  
2
3
-1  
-10  
2
3
-1  
-10  
-10  
-10  
-1  
-10  
-10  
-10  
I (mA)  
C
I (mA)  
C
VCE = -1 V  
Tamb = 25 °C  
(1) VCE = -5 V  
(2) VCE = -2 V  
(3) VCE = -1 V  
(1) Tamb = 175 °C  
(2) Tamb = 150 °C  
(3) Tamb = 125 °C  
(4) Tamb = 100 °C  
(5) Tamb = 85 °C  
(6) Tamb = 25 °C  
(7) Tamb = -40 °C  
(8) Tamb = -55 °C  
Fig. 32. BC807-40H: DC current gain as a function of  
collector current; typical values  
Fig. 31. BC807-40H: DC current gain as a function of  
collector current; typical values  
aaa-029572  
aaa-027459  
-1.2  
-1  
V
BE  
(V)  
V
BE  
(V)  
(1)  
(2)  
-0.9  
(3)  
-0.8  
(2)  
(1)  
(3)  
-0.8  
-0.7  
-0.6  
-0.5  
(4)  
(6)  
-0.4  
(5)  
(7)  
(8)  
0
-10  
-1  
2
3
-1  
-10  
2
3
-1  
-10  
-10  
-10  
-1  
-10  
-10  
-10  
I
(mA)  
I (mA)  
C
C
VCE = -1 V  
Tamb = 25 °C  
(1) VCE = -1 V  
(2) VCE = -2 V  
(3) VCE = -5 V  
(1) Tamb = -55 °C  
(2) Tamb = -40 °C  
(3) Tamb = 25 °C  
(4) Tamb = 85 °C  
(5) Tamb = 100 °C  
(6) Tamb = 125 °C  
(7) Tamb = 150 °C  
(8) Tamb = 175 °C  
Fig. 34. BC807-40H: Base-emitter voltage as a function  
of collector current; typical values  
Fig. 33. BC807-40H: Base-emitter voltage as a function  
of collector current; typical values  
©
BC807H_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2019. All rights reserved  
Product data sheet  
Rev. 1 — 5 March 2019  
14 / 21  
Nexperia  
BC807H series  
45 V, 500 mA PNP general-purpose transistors  
aaa-029569  
aaa-027461  
-1.2  
-1.0  
V
BEsat  
(V)  
V
BEsat  
(V)  
-0.9  
(1)  
(2)  
(3)  
(4)  
-0.8  
-0.4  
-0  
(2)  
(1)  
(3)  
-0.8  
-0.7  
-0.6  
-0.5  
(4)  
(6)  
(5)  
(7)  
(8)  
-1  
2
3
-1  
-10  
2
3
-10  
-1  
-10  
-10  
-10  
-1  
-10  
-10  
-10  
I
(mA)  
I (mA)  
C
C
IC / IB = 10  
Tamb = 25 °C  
(1) Tamb = -55 °C  
(2) Tamb = -40 °C  
(3) Tamb = 25 °C  
(4) Tamb = 85 °C  
(5) Tamb = 100 °C  
(6) Tamb = 125 °C  
(7) Tamb = 150 °C  
(8) Tamb = 175 °C  
(1) IC / IB = 10  
(2) IC / IB = 20  
(3) IC / IB = 50  
(4) IC / IB = 100  
Fig. 36. BC807-40H: Base-emitter saturation voltage as  
a function of collector current; typical values  
Fig. 35. BC807-40H: Base-emitter saturation voltage as  
a function of collector current; typical values  
aaa-029570  
aaa-027463  
-1  
-1  
V
V
CEsat  
(V)  
CEsat  
(V)  
-1  
-1  
-10  
-10  
-10  
-10  
-10  
-10  
(1)  
(2)  
(3)  
(4)  
(1)  
(2)  
(3)  
(4)  
-2  
-3  
-2  
-3  
-1  
-10  
-1  
2
3
2
3
-10  
-1  
-10  
-10  
-10  
-1  
-10  
-10  
-10  
I
(mA)  
I (mA)  
C
C
IC / IB = 10  
Tamb = 25 °C  
(1) Tamb = 175 °C  
(2) Tamb = 85 °C  
(3) Tamb = 25 °C  
(4) Tamb = -40 °C  
(1) IC / IB = 100  
(2) IC / IB = 50  
(3) IC / IB = 20  
(4) IC / IB = 10  
Fig. 37. BC807-40H: Collector-emitter saturation voltage Fig. 38. BC807-40H: Collector-emitter saturation voltage  
as a function of collector current; typical values  
as a function of collector current; typical values  
©
BC807H_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2019. All rights reserved  
Product data sheet  
Rev. 1 — 5 March 2019  
15 / 21  
Nexperia  
BC807H series  
45 V, 500 mA PNP general-purpose transistors  
aaa-027464  
aaa-027465  
-1.0  
20  
I
B
(mA) = -11.0  
-9.9  
I
C
C
(A)  
c
-8.8  
-7.7  
(pF)  
-0.8  
16  
-6.6  
-5.5  
-4.4  
-3.3  
-0.6  
-0.4  
-0.2  
0
12  
8
-2.2  
-1.1  
4
0
0
-1  
-2  
-3  
-4  
-5  
0
-10  
-20  
-30  
-40  
V
-50  
(V)  
V
(V)  
CE  
CB  
Tamb = 25 °C  
f = 1 MHz  
Tamb = 25 °C  
Fig. 39. BC807-40H: Collector current as a function of  
collector-emitter voltage; typical values  
Fig. 40. BC807-40H: Collector capacitance as a function  
of collector-base voltage; typical values  
aaa-027466  
aaa-027467  
3
50  
10  
C
e
(pF)  
40  
f
T
(MHz)  
30  
20  
10  
0
(1)  
2
10  
(2)  
10  
2
3
0
-1  
-2  
-3  
-4  
-5  
-1  
-10  
-10  
-10  
V
(V)  
I (mA)  
C
EB  
f = 1 MHz  
f = 1 MHz  
Tamb = 25 °C  
Tamb = 25 °C  
(1) VCE = -5 V  
(2) VCE = -1 V  
Fig. 41. BC807-40H: Emitter capacitance as a function  
of emitter-base voltage; typical values  
Fig. 42. BC807-40H: Transition frequency as a function  
of collector current; typical values  
8. Test information  
8.1. Quality information  
This product has been qualified in accordance with the Automotive Electronics Council (AEC)  
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in  
automotive applications.  
©
BC807H_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2019. All rights reserved  
Product data sheet  
Rev. 1 — 5 March 2019  
16 / 21  
 
 
Nexperia  
BC807H series  
45 V, 500 mA PNP general-purpose transistors  
9. Package outline  
Table 9. Package outline  
3.0  
2.8  
1.1  
0.9  
3
0.45  
0.15  
2.5 1.4  
2.1 1.2  
1
2
0.48  
0.38  
0.15  
0.09  
1.9  
Dimensions in mm  
18-03-12  
Fig. 43. Package outline TO-236AB (SOT23)  
©
BC807H_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2019. All rights reserved  
Product data sheet  
Rev. 1 — 5 March 2019  
17 / 21  
 
Nexperia  
BC807H series  
45 V, 500 mA PNP general-purpose transistors  
10. Soldering  
Table 10. Soldering  
3.3  
2.9  
1.9  
solder lands  
solder resist  
2
3
1.7  
solder paste  
occupied area  
0.6  
0.7  
(3×)  
(3×)  
Dimensions in mm  
0.5  
(3×)  
0.6  
(3×)  
1
sot23_fr  
Fig. 44. Reflow soldering footprint for TO-236AB (SOT23)  
2.2  
1.2  
(2×)  
1.4  
(2×)  
solder lands  
solder resist  
2.6  
4.6  
occupied area  
Dimensions in mm  
1.4  
preferred transport direction during soldering  
2.8  
4.5  
sot23_fw  
Fig. 45. Wave soldering footprint for TO-236AB (SOT23)  
©
BC807H_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2019. All rights reserved  
Product data sheet  
Rev. 1 — 5 March 2019  
18 / 21  
 
Nexperia  
BC807H series  
45 V, 500 mA PNP general-purpose transistors  
11. Revision history  
Table 11. Revision history  
Document ID  
Release date  
20190305  
Data sheet status  
Product data sheet  
Change notice Supersedes  
BC807H_SER v.1  
-
-
©
BC807H_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2019. All rights reserved  
Product data sheet  
Rev. 1 — 5 March 2019  
19 / 21  
 
Nexperia  
BC807H series  
45 V, 500 mA PNP general-purpose transistors  
equipment, nor in applications where failure or malfunction of an Nexperia  
product can reasonably be expected to result in personal injury, death or  
severe property or environmental damage. Nexperia and its suppliers accept  
no liability for inclusion and/or use of Nexperia products in such equipment or  
applications and therefore such inclusion and/or use is at the customer's own  
risk.  
12. Legal information  
Data sheet status  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Document status Product  
Definition  
[1][2]  
status [3]  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. Nexperia makes no representation  
or warranty that such applications will be suitable for the specified use  
without further testing or modification.  
Objective [short]  
data sheet  
Development  
This document contains data from  
the objective specification for  
product development.  
Preliminary [short]  
data sheet  
Qualification  
Production  
This document contains data from  
the preliminary specification.  
Customers are responsible for the design and operation of their applications  
and products using Nexperia products, and Nexperia accepts no liability for  
any assistance with applications or customer product design. It is customer’s  
sole responsibility to determine whether the Nexperia product is suitable  
and fit for the customer’s applications and products planned, as well as  
for the planned application and use of customer’s third party customer(s).  
Customers should provide appropriate design and operating safeguards to  
minimize the risks associated with their applications and products.  
Product [short]  
data sheet  
This document contains the product  
specification.  
[1] Please consult the most recently issued document before initiating or  
completing a design.  
[2] The term 'short data sheet' is explained in section "Definitions".  
[3] The product status of device(s) described in this document may have  
changed since this document was published and may differ in case of  
multiple devices. The latest product status information is available on  
the internet at https://www.nexperia.com.  
Nexperia does not accept any liability related to any default, damage, costs  
or problem which is based on any weakness or default in the customer’s  
applications or products, or the application or use by customer’s third party  
customer(s). Customer is responsible for doing all necessary testing for the  
customer’s applications and products using Nexperia products in order to  
avoid a default of the applications and the products or of the application or  
use by customer’s third party customer(s). Nexperia does not accept any  
liability in this respect.  
Definitions  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. Nexperia does not give any representations or  
warranties as to the accuracy or completeness of information included herein  
and shall have no liability for the consequences of use of such information.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those  
given in the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is  
intended for quick reference only and should not be relied upon to contain  
detailed and full information. For detailed and full information see the relevant  
full data sheet, which is available on request via the local Nexperia sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
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sold subject to the general terms and conditions of commercial sale, as  
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apply. Nexperia hereby expressly objects to applying the customer’s general  
terms and conditions with regard to the purchase of Nexperia products by  
customer.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
Nexperia and its customer, unless Nexperia and customer have explicitly  
agreed otherwise in writing. In no event however, shall an agreement be  
valid in which the Nexperia product is deemed to offer functions and qualities  
beyond those described in the Product data sheet.  
No offer to sell or license — Nothing in this document may be interpreted  
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grant, conveyance or implication of any license under any copyrights, patents  
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Disclaimers  
Export control — This document as well as the item(s) described herein  
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Limited warranty and liability — Information in this document is believed  
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Translations — A non-English (translated) version of a document is for  
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In no event shall Nexperia be liable for any indirect, incidental, punitive,  
special or consequential damages (including - without limitation - lost  
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damages are based on tort (including negligence), warranty, breach of  
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Notice: All referenced brands, product names, service names and  
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Notwithstanding any damages that customer might incur for any reason  
whatsoever, Nexperia’s aggregate and cumulative liability towards customer  
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Terms and conditions of commercial sale of Nexperia.  
Right to make changes — Nexperia reserves the right to make changes  
to information published in this document, including without limitation  
specifications and product descriptions, at any time and without notice. This  
document supersedes and replaces all information supplied prior to the  
publication hereof.  
Suitability for use in automotive applications — This Nexperia product  
has been qualified for use in automotive applications. Unless otherwise  
agreed in writing, the product is not designed, authorized or warranted to  
be suitable for use in life support, life-critical or safety-critical systems or  
©
BC807H_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2019. All rights reserved  
Product data sheet  
Rev. 1 — 5 March 2019  
20 / 21  
 
Nexperia  
BC807H series  
45 V, 500 mA PNP general-purpose transistors  
Contents  
1. Product profile..............................................................1  
1.1. General description......................................................1  
1.2. Features and benefits..................................................1  
1.3. Applications................................................................. 1  
1.4. Quick reference data................................................... 1  
2. Pinning information......................................................2  
3. Ordering information....................................................2  
4. Marking..........................................................................2  
5. Limiting values............................................................. 3  
6. Thermal characteristics............................................... 5  
7. Characteristics..............................................................7  
8. Test information..........................................................16  
8.1. Quality information.....................................................16  
9. Package outline.......................................................... 17  
10. Soldering................................................................... 18  
11. Revision history........................................................19  
12. Legal information......................................................20  
© Nexperia B.V. 2019. All rights reserved  
For more information, please visit: http://www.nexperia.com  
For sales office addresses, please send an email to: salesaddresses@nexperia.com  
Date of release: 5 March 2019  
©
BC807H_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2019. All rights reserved  
Product data sheet  
Rev. 1 — 5 March 2019  
21 / 21  

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General Purpose Transistors
ONSEMI

BC807-16LT3

General Purpose Transistors(PNP Silicon)
ONSEMI

BC807-16LT3G

General Purpose Transistors
ONSEMI

BC807-16LVL

BC807-16L/SOT23/TO-236AB
ETC