BCM62B [NEXPERIA]

PNP/PNP matched double transistorProduction;
BCM62B
型号: BCM62B
厂家: Nexperia    Nexperia
描述:

PNP/PNP matched double transistorProduction

放大器 光电二极管 晶体管
文件: 总13页 (文件大小:2047K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BCM62B  
PNP/PNP matched double transistor  
Rev. 02 — 28 August 2009  
Product data sheet  
1. Product profile  
1.1 General description  
PNP/PNP matched double transistor in a SOT143B small Surface-Mounted Device (SMD)  
plastic package. Matched version of BCV62.  
NPN/NPN equivalent: BCM61B  
1.2 Features  
I Current gain matching  
1.3 Applications  
I Current mirror  
I Differential amplifier  
1.4 Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor TR1  
VCEO  
hFE  
collector-emitter voltage  
DC current gain  
open base  
-
-
45  
V
VCE = 5 V;  
IC = 2 mA  
200  
290  
450  
Per transistor  
IC  
collector current  
-
-
100  
mA  
Per device  
IC1/IE2  
[1]  
current matching  
VCE1 = 5 V;  
1
1.1  
1.2  
I
T
E2 = 0.5 mA;  
amb 25 °C  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard  
footprint.  
BCM62B  
Nexperia  
PNP/PNP matched double transistor  
2. Pinning information  
Table 2.  
Pinning  
Pin  
1
Description  
Simplified outline  
Symbol  
collector TR2, base TR1 and TR2  
collector TR1  
4
3
4
3
2
3
emitter TR1  
TR2  
TR1  
4
emitter TR2  
1
2
1
2
006aaa843  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name  
-
Description  
Version  
BCM62B  
plastic surface-mounted package; 4 leads  
SOT143B  
4. Marking  
Table 4.  
Marking codes  
Type number  
BCM62B  
Marking code[1]  
*AD  
[1] * = -: made in Hong Kong  
* = p: made in Hong Kong  
* = t: made in Malaysia  
* = W: made in China  
BCM62B  
© Nexperia B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 28 August 2009  
2 of 13  
BCM62B  
Nexperia  
PNP/PNP matched double transistor  
5. Limiting values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
Parameter  
Conditions  
Min  
Max  
Unit  
Per transistor TR1  
VCBO  
VCEO  
collector-base voltage  
collector-emitter voltage  
open emitter  
open base  
-
-
50  
45  
V
V
Per transistor  
VEBS emitter-base voltage  
IC  
VCB = 0 V  
-
-
-
5  
V
collector current  
100  
200  
mA  
mA  
ICM  
peak collector current  
single pulse;  
tp 1 ms  
[1]  
[1]  
Ptot  
total power dissipation  
T
amb 25 °C  
amb 25 °C  
-
220  
mW  
Per device  
Ptot  
Tj  
total power dissipation  
junction temperature  
ambient temperature  
storage temperature  
T
-
390  
mW  
°C  
-
150  
Tamb  
Tstg  
65  
65  
+150  
+150  
°C  
°C  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
6. Thermal characteristics  
Table 6.  
Thermal characteristics  
Symbol Parameter  
Per transistor  
Conditions  
Min  
Typ  
Max  
Unit  
[1]  
[1]  
Rth(j-a)  
thermal resistance from in free air  
junction to ambient  
-
-
568  
K/W  
K/W  
Per device  
Rth(j-a)  
thermal resistance from in free air  
junction to ambient  
-
-
321  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
BCM62B  
© Nexperia B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 28 August 2009  
3 of 13  
BCM62B  
Nexperia  
PNP/PNP matched double transistor  
7. Characteristics  
Table 7.  
Characteristics  
Tamb = 25 °C unless otherwise specified.  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor TR1  
ICBO  
collector-base cut-off  
current  
VCB = 30 V;  
IE = 0 A  
-
-
-
-
15  
5  
nA  
VCB = 30 V;  
IE = 0 A;  
µA  
Tj = 150 °C  
IEBO  
hFE  
emitter-base cut-off  
current  
VEB = 5 V;  
IC = 0 A  
-
-
100  
-
nA  
DC current gain  
VCE = 5 V;  
IC = 10 µA  
-
250  
-
VCE = 5 V;  
100  
-
IC = 100 µA  
VCE = 5 V;  
IC = 2 mA  
200  
290  
50  
200  
760  
920  
650  
-
450  
200  
400  
-
VCEsat  
VBEsat  
VBE  
collector-emitter  
saturation voltage  
IC = 10 mA;  
IB = 0.5 mA  
-
mV  
mV  
mV  
mV  
mV  
mV  
pF  
IC = 100 mA;  
IB = 5 mA  
-
[1]  
[1]  
[2]  
[2]  
base-emitter saturation IC = 10 mA;  
-
voltage  
IB = 0.5 mA  
IC = 100 mA;  
IB = 5 mA  
-
-
base-emitter voltage  
VCE = 5 V;  
IC = 2 mA  
600  
700  
760  
2.2  
VCE = 5 V;  
IC = 10 mA  
-
-
Cc  
Ce  
fT  
collector capacitance  
emitter capacitance  
transition frequency  
noise figure  
VCB = 10 V;  
IE = ie = 0 A;  
f = 1 MHz  
-
VEB = 0.5 V;  
IC = ic = 0 A;  
f = 1 MHz  
-
10  
-
-
-
pF  
VCE = 5 V;  
IC = 10 mA;  
f = 100 MHz  
100  
-
175  
1.6  
MHz  
dB  
NF  
VCE = 5 V;  
IC = 0.2 mA;  
RS = 2 k;  
f = 10 Hz to  
15.7 kHz  
VCE = 5 V;  
-
3.1  
-
dB  
IC = 0.2 mA;  
RS = 2 k;  
f = 1 kHz;  
B = 200 Hz  
BCM62B  
© Nexperia B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 28 August 2009  
4 of 13  
BCM62B  
Nexperia  
PNP/PNP matched double transistor  
Table 7.  
Characteristics …continued  
Tamb = 25 °C unless otherwise specified.  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor TR2  
VEBS  
emitter-base voltage  
VCB = 0 V;  
IE = 250 mA  
-
-
-
1.5  
-
V
VCB = 0 V;  
400  
mV  
IE = 10 µA  
Per device  
[3]  
[3]  
[3]  
[3]  
IC1/IE2  
current matching  
VCE1 = 5 V;  
1
1.1  
-
1.2  
I
T
E2 = 0.5 mA;  
amb 25 °C  
V
CE1 = 5 V;  
E2 = 0.5 mA;  
amb 150 °C  
1.02  
0.95  
0.9  
1.22  
1.15  
1.1  
I
T
V
CE1 = 3 V;  
E2 = 0.5 mA;  
amb 25 °C  
1.05  
1
I
T
V
CE1 = 1 V;  
E2 = 0.5 mA;  
amb 25 °C  
I
T
[1] VBEsat decreases by about 1.7 mV/K with increasing temperature.  
[2] VBE decreases by about 2 mV/K with increasing temperature.  
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
BCM62B  
© Nexperia B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 28 August 2009  
5 of 13  
BCM62B  
Nexperia  
PNP/PNP matched double transistor  
006aaa832  
006aaa833  
0.20  
600  
I
(mA) = 2.5  
2.25  
B
I
C
(A)  
1.75  
1.5  
h
FE  
2  
0.16  
(1)  
(2)  
1.25  
1  
400  
200  
0
0.12  
0.08  
0.04  
0
0.75  
0.5  
(3)  
0.25  
2  
1  
2
3
0
2  
4  
6  
8  
V
10  
(V)  
10  
10  
1  
10  
10  
10  
I (mA)  
C
CE  
Tamb = 25 °C  
VCE = 5 V  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = 55 °C  
Fig 1. Collector current as a function of  
Fig 2. DC current gain as a function of collector  
current; typical values  
collector-emitter voltage; typical values  
006aaa834  
006aaa835  
1.3  
10  
V
V
CEsat  
(V)  
BEsat  
(V)  
0.9  
0.5  
0.1  
1  
(1)  
(2)  
(3)  
(1)  
(2)  
(3)  
1  
10  
10  
2  
1  
2
3
1  
2
3
10  
1  
10  
10  
10  
10  
1  
10  
10  
10  
I
(mA)  
I (mA)  
C
C
IC/IB = 20  
IC/IB = 20  
(1) Tamb = 55 °C  
(2) Tamb = 25 °C  
(3) Tamb = 100 °C  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = 55 °C  
Fig 3. Base-emitter saturation voltage as a function  
of collector current; typical values  
Fig 4. Collector-emitter saturation voltage as a  
function of collector current; typical values  
BCM62B  
© Nexperia B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 28 August 2009  
6 of 13  
BCM62B  
Nexperia  
PNP/PNP matched double transistor  
006aaa836  
006aaa837  
3
1.0  
10  
V
BE  
(V)  
f
T
(MHz)  
0.8  
2
10  
0.6  
0.4  
10  
10  
1  
2
3
2
1  
10  
10  
10  
1  
10  
10  
I
C
(mA)  
I (mA)  
C
VCE = 5 V; Tamb = 25 °C  
VCE = 5 V; Tamb = 25 °C  
Fig 5. Base-emitter voltage as a function of collector  
current; typical values  
Fig 6. Transition frequency as a function of collector  
current; typical values  
006aaa838  
006aaa839  
7
15  
C
e
(pF)  
C
c
(pF)  
13  
5
3
1
11  
9
7
5
0
2  
4  
6  
8  
V
10  
(V)  
0
2  
4  
6  
V
(V)  
EB  
CB  
f = 1 MHz; Tamb = 25 °C  
f = 1 MHz; Tamb = 25 °C  
Fig 7. Collector capacitance as a function of  
collector-base voltage; typical values  
Fig 8. Emitter capacitance as a function of  
emitter-base voltage; typical values  
BCM62B  
© Nexperia B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 28 August 2009  
7 of 13  
BCM62B  
Nexperia  
PNP/PNP matched double transistor  
006aaa840  
1.5  
I
/I  
C1 E2  
1.3  
(1)  
(2)  
1.1  
0.9  
(3)  
1  
2
10  
1  
10  
10  
I
E2  
(mA)  
(1) VCE1 = 5 V  
(2) VCE1 = 3 V  
(3) VCE1 = 1 V  
Fig 9. Current matching as a function of emitter current 2; typical values  
8. Test information  
A
I
C1  
2
3
1
I
=
E2  
V  
TR1  
TR2  
CE1  
constant  
4
006aaa841  
Fig 10. Test circuit current matching  
BCM62B  
© Nexperia B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 28 August 2009  
8 of 13  
BCM62B  
Nexperia  
PNP/PNP matched double transistor  
9. Package outline  
3.0  
2.8  
1.1  
0.9  
1.9  
4
3
0.45  
0.15  
2.5 1.4  
2.1 1.2  
1
2
0.88  
0.78  
0.48  
0.38  
0.15  
0.09  
1.7  
Dimensions in mm  
04-11-16  
Fig 11. Package outline SOT143B  
10. Packing information  
Please refer to packing information on www.nexperia.com.  
BCM62B  
© Nexperia B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 28 August 2009  
9 of 13  
BCM62B  
Nexperia  
PNP/PNP matched double transistor  
11. Soldering  
3.25  
0.60 (3x)  
0.50 (3x)  
solder lands  
solder resist  
occupied area  
0.60  
(4x)  
4
3
2
2.70  
1.30 3.00  
1
solder paste  
msa441  
0.90  
1.00  
2.50  
Dimensions in mm  
Fig 12. Reflow soldering footprint SOT143B  
4.45  
1.20 (3×)  
4
3
1.15 4.00 4.60  
solder lands  
solder resist  
occupied area  
1
2
Dimensions in mm  
1.00  
preferred transport direction during soldering  
msa422  
3.40  
Dimensions in mm  
Fig 13. Wave soldering footprint SOT143B  
BCM62B  
© Nexperia B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 28 August 2009  
10 of 13  
BCM62B  
Nexperia  
PNP/PNP matched double transistor  
12. Revision history  
Table 9.  
Revision history  
Document ID  
BCM62B_2  
Release date  
Data sheet status  
Change notice  
Supersedes  
20090828  
Product data sheet  
-
BCM62B_1  
Modifications:  
This data sheet was changed to reflect the new company name NXP Semiconductors,  
including new legal definitions and disclaimers. No changes were made to the technical  
content.  
Figure 13 “Wave soldering footprint SOT143B”:updated  
BCM62B_1  
20060919  
Product data sheet  
-
-
BCM62B  
© Nexperia B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 28 August 2009  
11 of 13  
BCM62B  
Nexperia  
PNP/PNP matched double transistor  
13. Legal information  
13.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nexperia.com.  
damage. Nexperia accepts no liability for inclusion and/or use of Nexperia  
products in such equipment or applications and therefore such inclusion and/  
or use is at the customer’s own risk.  
13.2 Definitions  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. Nexperia does not give any representations or  
warranties as to the accuracy or completeness of information included herein  
and shall have no liability for the consequences of use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. Nexperia makes no representation  
or warranty that such applications will be suitable for the specified use  
without further testing or modification.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) may cause permanent  
damage to the device. Limiting values are stress ratings only and operation of  
the device at these or any other conditions above those given in the  
Characteristics sections of this document is not implied. Exposure to limiting  
values for extended periods may affect device reliability.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is  
intended for quick reference only and should not be relied upon to contain  
detailed and full information. For detailed and full information see the  
relevant full data sheet, which is available on request via the local Nexperia  
sales office. In case of any inconsistency or conflict with the short data sheet,  
the full data sheet shall prevail.  
Terms and conditions of sale — Nexperia products are sold subject to the  
general terms and conditions of commercial sale, as published at http://  
www.nexperia.com/profile/terms, including those pertaining to warranty,  
intellectual property rights infringement and limitation of liability, unless  
explicitly otherwise agreed to in writing by Nexperia. In case of any  
inconsistency or conflict between information in this document and such  
terms and conditions, the latter will prevail.  
13.3 Disclaimers  
General — Information in this document is believed to be accurate and  
reliable. However, Nexperia does not give any representations or warranties,  
expressed or implied, as to the accuracy or completeness of such information  
and shall have no liability for the consequences of use of such information.  
No offer to sell or license — Nothing in this document may be interpreted  
or construed as an offer to sell products that is open for acceptance or the  
grant, conveyance or implication of any license under any copyrights, patents  
or other industrial or intellectual property rights.  
Right to make changes — Nexperia reserves the right to make changes to  
information published in this document, including without limitation  
specifications and product descriptions, at any time and without notice. This  
document supersedes and replaces all information supplied prior to the  
publication hereof.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from national authorities.  
Suitability for use — Nexperia products are not designed, authorized or  
warranted to be suitable for use in medical, military, aircraft, space or life  
support equipment, nor in applications where failure or malfunction of an  
Nexperia product can reasonably be expected to result in personal injury,  
death or severe property or environmental  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
13.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
BCM62B  
© Nexperia B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 28 August 2009  
12 of 13  
BCM62B  
Nexperia  
PNP/PNP matched double transistor  
14. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
1.4  
General description. . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Packing information. . . . . . . . . . . . . . . . . . . . . . 9  
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11  
3
4
5
6
7
8
9
10  
11  
12  
13  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
13.1  
13.2  
13.3  
13.4  
14  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© Nexperia B.V. 2009.  
All rights reserved.  
For more information, please visit: http://www.nexperia.com  
For sales office addresses, please send an email to:  
salesaddresses@nexperia.com  
Date of release: 28 August 2009  
Document identifier: BCM62B  

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SI9137DB

Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9137LG

Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9122E

500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification Drivers

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