BCM847DS [NEXPERIA]

NPN/NPN matched double transistorProduction;


型号：	BCM847DS
厂家：	Nexperia
描述：	NPN/NPN matched double transistorProduction 放大器光电二极管晶体管
文件：	总10页 (文件大小：236K)
中文：	中文翻译
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BCM847DS

NPN/NPN matched double transistor

27 December 2022

Product data sheet

1. General description

NPN/NPN matched double transistor in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic

package. The transistors are fully isolated internally.

PNP/PNP complement: BMC857DS

2. Features and benefits

•

Current gain matching

•

Base-emitter voltage matching

Drop-in replacement for standard double transistors

AEC-Q101 qualified

3. Applications

•

Current mirror

Differential amplifier

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V_CEO

collector-emitter

voltage

open base

I_C

collector current

DC current gain

100

450

h_FE

V_CE= 5 V; I_C= 2 mA; T_amb= 25 °C

200

290

Per device

h_FE1/h_FE2

DC current gain

matching

[1]

[2]

0.9

V_BE1−V_BE2

base-emitter voltage

matching

[1] The smaller of the two values is taken as the numerator.

[2] The smaller of the two values is subtracted from the larger value.

Nexperia

BCM847DS

NPN/NPN matched double transistor

5. Pinning information

Table 2. Pinning information

Symbol

Description

emitter TR1

base TR1

Simplified outline

Graphic symbol

B2 E2

TR2

collector TR2

emitter TR2

base TR2

TR1

B1 C2

sym020

SC-74; TSOP6 (SOT457)

collector TR1

6. Ordering information

Table 3. Ordering information

Type number

Package

Name

Description

Version

SOT457

BCM847DS

SC-74; TSOP6 plastic, surface-mounted package (SC-74; TSOP6); 6

leads

7. Marking

Table 4. Marking codes

Type number

Marking code

BCM847DS

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per transistor

V_CBO

V_CEO

V_EBO

I_C

collector-base voltage

open emitter

collector-emitter voltage open base

emitter-base voltage

collector current

open collector

100

200

250

I_CM

peak collector current

total power dissipation

single pulse; t_p≤ 1 ms

T_amb≤ 25 °C

P_tot

[1] [2]

Per device

P_tot

total power dissipation

junction temperature

ambient temperature

storage temperature

T_amb≤ 25 °C

380

150

°C

T_j

T_amb

T_stg

-65

°C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

[2] Reflow soldering is the only recommended soldering method.

BCM847DS

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Product data sheet

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BCM847DS

NPN/NPN matched double transistor

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

R_th(j-a)

thermal resistance from in free air

junction to ambient

[1] [2]

500

K/W

Per device

R_th(j-a)

thermal resistance from in free air

junction to ambient

328

K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Reflow soldering is the only recommended soldering method.

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

I_CBO

collector-base cut-off

current

V_CB= 30 V; I_E= 0 A; T_amb= 25 °C

V_CB= 30 V; I_E= 0 A; T_j= 150 °C

V_EB= 5 V; I_C= 0 A; T_amb= 25 °C

µA

I_EBO

h_FE

emitter-base cut-off

current

100

DC current gain

V_CE= 5 V; I_C= 10 µA; T_amb= 25 °C

V_CE= 5 V; I_C= 2 mA; T_amb= 25 °C

I_C= 10 mA; I_B= 0.5 mA; T_amb= 25 °C

I_C= 100 mA; I_B= 5 mA; T_amb= 25 °C

250

290

200

450

200

400

V_CEsat

V_BEsat

V_BE

collector-emitter

saturation voltage

200

760

910

660

base-emitter saturation I_C= 10 mA; I_B= 0.5 mA; T_amb= 25 °C

voltage

[1]

[2]

I_C= 100 mA; I_B= 5 mA; T_amb= 25 °C

base-emitter voltage

V_CE= 5 V; I_C= 2 mA; T_amb= 25 °C

V_CE= 5 V; I_C= 10 mA; T_amb= 25 °C

610

710

770

1.5

C_c

C_e

f_T

collector capacitance

emitter capacitance

transition frequency

noise figure

V_CB= 10 V; I_E= 0 A; i_e= 0 A; f = 1 MHz;

T_amb= 25 °C

V_EB= 0.5 V; I_C= 0 A; i_c= 0 A;

f = 1 MHz; T_amb= 25 °C

V_CE= 5 V; I_C= 10 mA; f = 100 MHz;

T_amb= 25 °C

100

250

2.8

3.3

MHz

V_CE= 5 V; I_C= 0.2 mA; R_S= 2 kΩ; f =

10 Hz to 15.7 kHz; T_amb= 25 °C

V_CE= 5 V; I_C= 0.2 mA; R_S= 2 kΩ;

f = 1 kHz; B = 200 Hz; T_amb= 25 °C

Per device

h_FE1/h_FE2

DC current gain

matching

V_CE= 5 V; I_C= 2 mA; T_amb= 25 °C

[3]

[4]

0.9

V_BE1−V_BE2

base-emitter voltage

matching

[1] V_BEsatdecreases by about 1.7 mV/K with increasing temperature.

[2] V_BEdecreases by about 2 mV/K with increasing temperature.

[3] The smaller of the two values is taken as the numerator.

[4] The smaller of the two values is subtracted from the larger value.

BCM847DS

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Product data sheet

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BCM847DS

NPN/NPN matched double transistor

006aaa532

006aaa533

0.20

600

(mA) = 4.50

4.05

3.60

(A)

0.16

3.15

2.70

2.25

1.80

1.35

400

200

(1)

(2)

(3)

0.12

0.08

0.04

0.90

0.45

- 2

- 1

I (mA)

(V)

T_amb= 25 °C

V_CE= 5 V

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

Fig. 1. Collector current as a function of collector-

emitter voltage; typical values

Fig. 2. DC current gain as a function of collector

current; typical values

006aaa534

006aaa535

1.3

BEsat

(V)

CEsat

(V)

1.1

0.9

0.7

0.5

0.3

0.1

(1)

(2)

(3)

- 1

(1)

(2)

(3)

- 2

- 1

(mA)

I (mA)

I_C/I_B= 20

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

Fig. 3. Base-emitter saturation voltage as a function of Fig. 4. Collector-emitter saturation voltage as a

collector current; typical values

function of collector current; typical values

BCM847DS

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Product data sheet

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BCM847DS

NPN/NPN matched double transistor

006aaa536

006aaa537

(V)

(MHz)

0.8

0.6

0.4

- 1

(mA)

I (mA)

V_CE= 5 V; T_amb= 25 °C

Fig. 5. Base-emitter voltage as a function of collector Fig. 6. Transition frequency as a function of collector

current; typical values current; typical values

V_CE= 5 V; T_amb= 25 °C

006aaa538

006aaa539

(pF)

(V)

f = 1 MHz; T_amb= 25 °C

Fig. 7. Collector capacitance as a function of collector- Fig. 8. Emitter capacitance as a function of emitter-

base voltage; typical values

11. Application information

V+

OUT1

OUT2

IN2

IN1

TR1

TR2

out

TR1

TR2

V-

006aaa523

006aaa525

Fig. 9. Current mirror

Fig. 10. Differential amplifier

BCM847DS

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Product data sheet

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BCM847DS

NPN/NPN matched double transistor

12. Test information

Quality information

This product has been qualified in accordance with the Automotive Electronics Council (AEC)

standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in

automotive applications.

13. Package outline

3.1

2.7

1.1

0.9

0.6

0.2

3.0

2.5 1.3

1.7

pin 1 index

0.26

0.10

0.40

0.25

0.95

1.9

Dimensions in mm

18-03-11

Fig. 11. Package outline SC-74; TSOP6 (SOT457)

14. Soldering

3.45

1.95

0.55

(6×)

solder lands

solder resist

0.45

(6×)

0.95

3.3 2.825

0.95

solder paste

occupied area

0.7

Dimensions in mm

(6×)

0.8

(6×)

2.4

sot457_fr

Fig. 12. Reflow soldering footprint for SC-74; TSOP6 (SOT457)

BCM847DS

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Product data sheet

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BCM847DS

NPN/NPN matched double transistor

5.3

1.5

(4×)

solder lands

1.475

solder resist

occupied area

0.45

(2×)

5.05

Dimensions in mm

preferred transport

direction during soldering

1.45

(6×)

2.85

sot457_fw

Fig. 13. Wave soldering footprint for SC-74; TSOP6 (SOT457)

BCM847DS

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Product data sheet

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BCM847DS

NPN/NPN matched double transistor

15. Revision history

Table 8. Revision history

Data sheet ID

BCM847DS v.7

Modifications:

Release date

20221227

Data sheet status

Change notice

Supersedes

Product data sheet

BCM847BV_BS_DS_6

•

Family data sheet splitted to single type data sheets.

Packing information removed.

BCM847BV_BS_DS_6

BCM847BV_BS_DS_5

Product data sheet

BCM847BV_BS_DS_5

BCM847BS_DS_4

Product data sheet

BCM847BS_DS_4

BCM847BS_DS_3

BCM847BS_2

Product data sheet

BCM847BS_DS_3

BCM847BS_2

BCM847BS_1

BCM847DS

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Product data sheet

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BCM847DS

NPN/NPN matched double transistor

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16. Legal information

Data sheet status

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Document status Product

Definition

[1][2]

status [3]

Applications — Applications that are described herein for any of these

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or warranty that such applications will be suitable for the specified use

without further testing or modification.

Objective [short]

data sheet

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This document contains data from

the objective specification for

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Preliminary [short]

data sheet

Qualification

Production

This document contains data from

the preliminary specification.

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Product [short]

data sheet

This document contains the product

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[1] Please consult the most recently issued document before initiating or

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[2] The term 'short data sheet' is explained in section "Definitions".

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

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Characteristics sections of this document is not warranted. Constant or

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Short data sheet — A short data sheet is an extract from a full data sheet

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BCM847DS

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Product data sheet

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BCM847DS

NPN/NPN matched double transistor

Contents

1. General description......................................................1

2. Features and benefits.................................................. 1

3. Applications.................................................................. 1

4. Quick reference data....................................................1

5. Pinning information......................................................2

6. Ordering information....................................................2

7. Marking..........................................................................2

8. Limiting values............................................................. 2

9. Thermal characteristics............................................... 3

10. Characteristics............................................................3

11. Application information..............................................5

12. Test information..........................................................6

13. Package outline.......................................................... 6

14. Soldering..................................................................... 6

15. Revision history..........................................................8

16. Legal information........................................................9

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 27 December 2022

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Product data sheet

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BCM847DS [NEXPERIA]

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