BCV61C [NEXPERIA]
NPN general-purpose double transistorsProduction;型号: | BCV61C |
厂家: | Nexperia |
描述: | NPN general-purpose double transistorsProduction 光电二极管 晶体管 |
文件: | 总13页 (文件大小:2287K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BCV61
NPN general-purpose double transistors
Rev. 04 — 18 December 2009
Product data sheet
1. Product profile
1.1 General description
NPN general-purpose double transistors in a small SOT143B Surface-Mounted
Device (SMD) plastic package.
Table 1.
Product overview
Type number
Package
Nexperia
SOT143B
PNP complement
JEITA
BCV61
-
BCV62
BCV61A
BCV61B
BCV61C
BCV62A
BCV62B
BCV62C
1.2 Features
Low current (max. 100 mA)
Low voltage (max. 30 V)
Matched pairs
1.3 Applications
Applications with working point independent of temperature
Current mirrors
2. Pinning information
Table 2.
Pinning
Pin
Description
Simplified outline
Graphic symbol
1
collector TR2;
base TR1 and TR2
4
3
4
3
2
3
4
collector TR1
emitter TR1
emitter TR2
TR2
TR1
1
2
1
2
006aaa842
BCV61
Nexperia
NPN general-purpose double transistors
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
-
Description
Version
BCV61
plastic surface-mounted package; 4 leads
SOT143B
BCV61A
BCV61B
BCV61C
4. Marking
Table 4.
Marking codes
Type number
BCV61
Marking code[1]
1M*
1J*
1K*
1L*
BCV61A
BCV61B
BCV61C
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Per transistor
Conditions
Min
Max
Unit
VCBO
VCEO
VEBS
IC
collector-base voltage
open emitter
open base
VCE = 0 V
-
-
-
-
-
-
30
V
collector-emitter voltage
emitter-base voltage
collector current
30
V
6
V
100
200
200
mA
mA
mA
ICM
peak collector current
peak base current
IBM
Per device
Ptot
[1]
total power dissipation
junction temperature
ambient temperature
storage temperature
Tamb ≤ 25 °C
-
250
mW
°C
Tj
-
150
Tamb
Tstg
−65
−65
+150
+150
°C
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB).
BCV61
© Nexperia B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 18 December 2009
2 of 13
BCV61
Nexperia
NPN general-purpose double transistors
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol Parameter
Conditions
Min
Typ
Max Unit
500 K/W
[1]
Rth(j-a)
thermal resistance from junction in free air
to ambient
-
-
[1] Device mounted on an FR4 PCB.
7. Characteristics
Table 7.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
Transistor TR1
ICBO
collector-base cut-off current
VCB = 30 V;
IE = 0 A
-
-
-
-
15
5
nA
VCB = 30 V;
IE = 0 A;
μA
Tj = 150 °C
IEBO
hFE
emitter-base cut-off current
DC current gain
VEB = 5 V;
IC = 0 A
-
-
100
-
nA
VCE = 5 V;
100
-
IC = 100 μA
V
CE = 5 V;
110
-
800
250
600
-
IC = 2 mA
VCEsat
VBEsat
VBE
collector-emitter saturation
voltage
IC = 10 mA;
IB = 0.5 mA
-
90
200
700
900
660
-
mV
mV
mV
mV
mV
mV
MHz
IC = 100 mA;
IB = 5 mA
-
[1]
[1]
[2]
[2]
base-emitter saturation voltage
base-emitter voltage
IC = 10 mA;
IB = 0.5 mA
-
IC = 100 mA;
IB = 5 mA
-
-
IC = 2 mA;
VCE = 5 V
580
-
700
770
-
IC = 10 mA;
VCE = 5 V
fT
transition frequency
collector capacitance
noise figure
VCE = 5 V;
IC = 10 mA;
f = 100 MHz
100
-
Cc
NF
VCB = 10 V;
IE = ie = 0 A;
f = 1 MHz
-
-
2.5
-
-
pF
dB
VCE = 5 V;
IC = 200 μA;
RS = 2 kΩ;
f = 1 kHz;
10
B = 200 Hz
BCV61
© Nexperia B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 18 December 2009
3 of 13
BCV61
Nexperia
NPN general-purpose double transistors
Table 7.
Characteristics …continued
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
Transistor TR2
VEBS
emitter-base voltage
VCB = 0 V;
IE = −250 mA
-
-
-
−1.8
V
VCB = 0 V;
−400
-
mV
IE = −10 μA
hFE
DC current gain
VCE = 5 V;
IC = 2 mA
BCV61
110
110
200
420
-
-
-
-
800
220
450
800
BCV61A
BCV61B
BCV61C
Transistors TR1 and TR2
IC1/IE2
current matching
IE2 = −0.5 mA;
VCE1 = 5 V
Tamb ≤ 25 °C
Tamb ≤ 150 °C
VCE1 = 5 V
0.7
0.7
-
-
-
-
1.3
1.3
−5
[3]
IE2
emitter current 2
mA
[1] VBEsat decreases by about 1.7 mV/K with increasing temperature.
[2] VBE decreases by about 2 mV/K with increasing temperature.
[3] Device, without emitter resistors, mounted on an FR4 PCB.
© Nexperia B.V. 2009. All rights reserved.
BCV61
Product data sheet
Rev. 04 — 18 December 2009
4 of 13
BCV61
Nexperia
NPN general-purpose double transistors
mgt723
mgt724
400
1200
BE
V
(mV)
h
FE
1000
(1)
300
(1)
(2)
800
600
400
200
0
(2)
(3)
200
100
0
(3)
−1
2
3
−1
2
3
10
1
10
10
10
10
1
10
10
10
I
(mA)
I (mA)
C
C
VCE = 5 V
(1) Tamb = 150 °C
(2) amb = 25 °C
(3) Tamb = −55 °C
VCE = 5 V
(1) Tamb = −55 °C
(2) amb = 25 °C
(3) Tamb = 150 °C
T
T
Fig 1. BCV61A: DC current gain as a function of
collector current; typical values
Fig 2. BCV61A: Base-emitter voltage as a function of
collector current; typical values
mgt725
mgt726
3
10
1200
BEsat
V
(mV)
1000
V
(mV)
CEsat
(1)
(2)
800
600
400
200
0
2
10
(1)
(2)
(3)
(3)
10
10
−1
2
3
−1
2
3
1
10
10
10
10
1
10
10
10
I
(mA)
I (mA)
C
C
IC/IB = 20
(1) Tamb = 150 °C
(2) amb = 25 °C
(3) Tamb = −55 °C
IC/IB = 10
(1) Tamb = −55 °C
(2) amb = 25 °C
(3) Tamb = 150 °C
T
T
Fig 3. BCV61A: Collector-emitter saturation voltage
as a function of collector current; typical
values
Fig 4. BCV61A: Base-emitter saturation voltage as a
function of collector current; typical values
© Nexperia B.V. 2009. All rights reserved.
BCV61
Product data sheet
Rev. 04 — 18 December 2009
5 of 13
BCV61
Nexperia
NPN general-purpose double transistors
mgt727
mgt728
600
1200
V
BE
h
FE
(mV)
1000
(1)
(2)
500
(1)
(2)
400
300
200
100
0
800
600
400
200
0
(3)
(3)
−2
−1
2
3
−1
2
3
10
10
1
10
10
10
10
1
10
10
10
I
(mA)
I
(mA)
C
C
VCE = 5 V
(1) Tamb = 150 °C
(2) amb = 25 °C
(3) Tamb = −55 °C
VCE = 5 V
(1) Tamb = −55 °C
(2) amb = 25 °C
(3) Tamb = 150 °C
T
T
Fig 5. BCV61B: DC current gain as a function of
collector current; typical values
Fig 6. BCV61B: Base-emitter voltage as a function of
collector current; typical values
mgt729
mgt730
4
10
1200
BEsat
V
(mV)
1000
V
CEsat
(mV)
(1)
(2)
3
10
800
600
400
200
0
(3)
2
10
(1)
(3) (2)
10
10
−1
2
3
−1
2
3
1
10
10
10
10
1
10
10
10
I
(mA)
I (mA)
C
C
IC/IB = 20
(1) Tamb = 150 °C
(2) amb = 25 °C
(3) Tamb = −55 °C
IC/IB = 10
(1) Tamb = −55 °C
(2) amb = 25 °C
(3) Tamb = 150 °C
T
T
Fig 7. BCV61B: Collector-emitter saturation voltage
as a function of collector current; typical
values
Fig 8. BCV61B: Base-emitter saturation voltage as a
function of collector current; typical values
BCV61
© Nexperia B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 18 December 2009
6 of 13
BCV61
Nexperia
NPN general-purpose double transistors
mgt731
mgt732
1200
1200
V
BE
h
FE
(mV)
1000
1000
800
600
400
200
0
(1)
(1)
(2)
800
600
400
200
0
(2)
(3)
(3)
−2
−1
2
3
−1
2
3
10
10
1
10
10
10
10
1
10
10
10
I
(mA)
I
(mA)
C
C
VCE = 5 V
(1) Tamb = 150 °C
(2) amb = 25 °C
(3) Tamb = −55 °C
VCE = 5 V
(1) Tamb = −55 °C
(2) amb = 25 °C
(3) Tamb = 150 °C
T
T
Fig 9. BCV61C: DC current gain as a function of
collector current; typical values
Fig 10. BCV61C: Base-emitter voltage as a function of
collector current; typical values
mgt733
mgt734
4
10
1200
BEsat
V
(mV)
V
CEsat
1000
(mV)
(1)
(2)
3
10
800
600
400
200
0
(3)
2
10
(1)
(3) (2)
10
10
−1
2
3
−1
2
3
1
10
10
10
10
1
10
10
10
I
(mA)
I (mA)
C
C
IC/IB = 20
(1) Tamb = 150 °C
(2) amb = 25 °C
(3) Tamb = −55 °C
IC/IB = 10
(1) Tamb = −55 °C
(2) amb = 25 °C
(3) Tamb = 150 °C
T
T
Fig 11. BCV61C: Collector-emitter saturation voltage
as a function of collector current; typical
values
Fig 12. BCV61C: Base-emitter saturation voltage as a
function of collector current; typical values
BCV61
© Nexperia B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 18 December 2009
7 of 13
BCV61
Nexperia
NPN general-purpose double transistors
mbk082
30
I
=
V
E2
CE1max
(V)
1 mA
20
10
0
5 mA
10 mA
50 mA
−1
2
10
1
10
10
R
(Ω)
E
IC1/IE2 = 1.3
Fig 13. Maximum collector-emitter voltage as a function of emitter resistance
8. Test information
A
I
C1
2
3
1
I
=
E2
V
TR1
TR2
CE1
constant
4
006aaa831
Fig 14. Test circuit current matching
A
I
C1
2
1
I
=
E2
V
TR1
TR2
CE1
constant
3
4
R
R
E
E
006aab977
Fig 15. BCV61 with emitter resistors
BCV61
© Nexperia B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 18 December 2009
8 of 13
BCV61
Nexperia
NPN general-purpose double transistors
9. Package outline
3.0
2.8
1.1
0.9
1.9
4
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
0.88
0.78
0.48
0.38
0.15
0.09
1.7
Dimensions in mm
04-11-16
Fig 16. Package outline SOT143B
10. Packing information
Please refer to packing information on www.nexperia.com.
BCV61
© Nexperia B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 18 December 2009
9 of 13
BCV61
Nexperia
NPN general-purpose double transistors
11. Soldering
3.25
1.9
0.6
(3×)
0.5
(3×)
solder lands
solder resist
0.7 0.6
(3×) (3×)
2
solder paste
3
occupied area
0.7 0.6
Dimensions in mm
0.75
0.95
0.9
1
sot143b_fr
Fig 17. Reflow soldering footprint SOT143B
4.45
2.2
1.2
(3×)
1.425
(3×)
solder lands
solder resist
occupied area
2.575
4.6
Dimensions in mm
1.425
preferred transport direction during soldering
1
1.2
sot143b_fw
Fig 18. Wave soldering footprint SOT143B
BCV61
© Nexperia B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 18 December 2009
10 of 13
BCV61
Nexperia
NPN general-purpose double transistors
12. Revision history
Table 9.
Revision history
Document ID
BCV61_4
Release date
Data sheet status
Change notice
Supersedes
20091218
Product data sheet
-
BCV61_3
Modifications:
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Section 3 “Ordering information”: added
• Section 4 “Marking”: updated
• Figure 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 and 12: added
• Section 8 “Test information”: added
• Figure 16: superseded by minimized package outline drawing
• Section 10 “Packing information”: added
• Section 11 “Soldering”: added
• Section 13 “Legal information”: updated
BCV61_3
19990408
Product specification
-
-
BCV61_CNV_2
-
BCV61_CNV_2
19970616
Product specification
BCV61
© Nexperia B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 18 December 2009
11 of 13
BCV61
Nexperia
NPN general-purpose double transistors
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nexperia.com.
damage. Nexperia accepts no liability for inclusion and/or use of Nexperia
products in such equipment or applications and therefore such inclusion
and/or use is at the customer’s own risk.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included
herein and shall have no liability for the consequences of use of such
information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local Nexperia
sales office. In case of any inconsistency or conflict with the short data
sheet, the full data sheet shall prevail.
Terms and conditions of sale — Nexperia products are sold subject to the
general terms and conditions of commercial sale, as published at http://
www.nexperia.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by Nexperia. In case of any
inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, Nexperia does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — Nexperia reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — Nexperia products are not designed, authorized or
warranted to be suitable for use in medical, military, aircraft, space or life
support equipment, nor in applications where failure or malfunction of an
Nexperia product can reasonably be expected to result in personal injury,
death or severe property or environmental
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
© Nexperia B.V. 2009. All rights reserved.
BCV61
Product data sheet
Rev. 04 — 18 December 2009
12 of 13
BCV61
Nexperia
NPN general-purpose double transistors
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packing information . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
3
4
5
6
7
8
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.1
13.2
13.3
13.4
14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Nexperia B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to:
salesaddresses@nexperia.com
Date of release: 18 December 2009
Document identifier: BCV61
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500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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