BSS138PS [NEXPERIA]
60 V, 320 mA dual N-channel Trench MOSFETProduction;
| 型号： | BSS138PS |
| 厂家： | 
Nexperia |
| 描述： | 60 V, 320 mA dual N-channel Trench MOSFETProduction PC 开关 光电二极管 晶体管 |
| 文件： | 总16页 (文件大小：915K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSS138PS
60 V, 320 mA dual N-channel Trench MOSFET
Rev. 1 — 2 November 2010
Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small
SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Quick reference data
Symbol Parameter
Per transistor
Conditions
Min
Typ
Max
Unit
VDS
VGS
ID
drain-source voltage
Tamb = 25 °C
Tamb = 25 °C
-
-
-
-
-
-
60
V
gate-source voltage
drain current
20
V
[1]
[2]
Tamb = 25 °C;
VGS = 10 V
320
mA
RDSon
drain-source on-state
resistance
Tj = 25 °C;
-
0.9
1.6
Ω
VGS = 10 V;
ID = 300 mA
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad
for drain 1 cm2.
[2] Pulse test: tp ≤ 300 μs; δ ≤ 0.01.
BSS138PS
Nexperia
60 V, 320 mA dual N-channel Trench MOSFET
2. Pinning information
Table 2.
Pinning
Pin
1
Symbol
S1
Description
source1
gate1
Simplified outline
Graphic symbol
D
1
D
6
5
4
2
2
G1
3
D2
drain2
4
S2
source2
gate2
1
2
3
5
G2
6
D1
drain1
S
G
S
G
2
1
1
2
msd901
3. Ordering information
Table 3.
Ordering information
Type number Package
Name
Description
Version
BSS138PS
SC-88
plastic surface-mounted package; 6 leads
SOT363
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
BSS138PS
NZ*
[1] * = placeholder for manufacturing site code
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Per transistor
Conditions
Min
Max
Unit
VDS
VGS
ID
drain-source voltage
Tamb = 25 °C
Tamb = 25 °C
VGS = 10 V
-
-
60
20
V
V
gate-source voltage
drain current
[1]
Tamb = 25 °C
Tamb = 100 °C
-
-
-
320
200
1.2
mA
mA
A
IDM
peak drain current
Tamb = 25 °C;
single pulse; tp ≤ 10 μs
BSS138PS
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 2 November 2010
2 of 16
BSS138PS
Nexperia
60 V, 320 mA dual N-channel Trench MOSFET
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
280
320
960
Unit
mW
mW
mW
[2]
[1]
Ptot
total power dissipation
Tamb = 25 °C
-
-
-
Tsp = 25 °C
Tamb = 25 °C
Tamb = 25 °C
Source-drain diode
[1]
[2]
IS
source current
-
-
290
mA
Per device
Ptot
Tj
total power dissipation
junction temperature
ambient temperature
storage temperature
420
mW
°C
150
Tamb
Tstg
−55
−65
+150
+150
°C
°C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
017aaa001
017aaa002
120
120
P
der
I
der
(%)
(%)
80
80
40
40
0
−75
0
−75
−25
25
75
125
175
(°C)
−25
25
75
125
T
amb
175
(°C)
T
amb
Ptot
ID
-----------------------
-------------------
Pder
=
× 100 %
Ider
=
× 100 %
Ptot(25°C)
ID(25°C)
Fig 1. Normalized total power dissipation as a
function of ambient temperature
Fig 2. Normalized continuous drain current as a
function of ambient temperature
BSS138PS
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 2 November 2010
3 of 16
BSS138PS
Nexperia
60 V, 320 mA dual N-channel Trench MOSFET
017aaa122
10
I
D
(A)
Limit R
= V /I
DS D
DSon
1
(1)
(2)
−1
10
10
10
(3)
(4)
(5)
(6)
−2
−3
−1
2
10
1
10
10
V
DS
(V)
IDM = single pulse
(1) tp = 100 μs
(2) tp = 1 ms
(3) tp = 10 ms
(4) DC; Tsp = 25 °C
(5) tp = 100 ms
(6) DC; Tamb = 25 °C; drain mounting pad 1 cm2
Fig 3. Per transistor: Safe operating area; junction to ambient; continuous and peak drain currents as a
function of drain-source voltage
6. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max Unit
Per transistor
[1]
[2]
Rth(j-a)
thermal resistance from
junction to ambient
in free air
-
-
-
390
340
-
445
390
130
K/W
K/W
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
Per device
[1]
Rth(j-a)
thermal resistance from
junction to ambient
in free air
-
-
300
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
BSS138PS
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 2 November 2010
4 of 16
BSS138PS
Nexperia
60 V, 320 mA dual N-channel Trench MOSFET
017aaa034
3
10
duty cycle = 1
0.75
0.5
Z
th(j-a)
(K/W)
0.33
0.2
0.25
2
10
0.1
0.05
0.02
0.01
0
10
1
10
−3
−2
−1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig 4. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
017aaa035
3
10
duty cycle = 1
Z
th(j-a)
(K/W)
0.75
0.5
0.33
0.2
2
10
0.25
0.1
0.05
0.02
0.01
0
10
1
10
−3
−2
−1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 1 cm2
Fig 5. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
BSS138PS
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 2 November 2010
5 of 16
BSS138PS
Nexperia
60 V, 320 mA dual N-channel Trench MOSFET
7. Characteristics
Table 7.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
Per transistor
Static characteristics
V(BR)DSS
VGS(th)
IDSS
drain-source breakdown ID = 10 μA; VGS = 0 V
60
-
-
V
V
voltage
gate-source threshold
voltage
ID = 250 μA; VDS = VGS
0.9
1.2
1.5
drain leakage current
VDS = 60 V; VGS = 0 V
Tj = 25 °C
-
-
-
-
-
-
1
μA
μA
nA
Tj = 150 °C
10
100
IGSS
gate leakage current
VGS = 20 V; VDS = 0 V
[1]
[1]
RDSon
drain-source on-state
resistance
VGS = 5 V; ID = 50 mA
VGS = 10 V; ID = 300 mA
VDS = 10 V; ID = 200 mA
-
-
-
1
2
Ω
0.9
700
1.6
-
Ω
gfs
forward
mS
transconductance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
ID = 300 mA;
VDS = 30 V;
VGS = 4.5 V
-
-
-
-
-
-
0.72 0.8
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
0.14
0.24
38
-
-
VGS = 0 V; VDS = 10 V;
f = 1 MHz
50
-
Coss
Crss
7
reverse transfer
capacitance
4
-
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 50 V;
RL = 250 Ω;
VGS = 10 V;
RG = 6 Ω
-
-
-
-
2
3
9
4
6
-
ns
ns
ns
ns
turn-off delay time
fall time
20
-
Source-drain diode
VSD
source-drain voltage
IS = 115 mA; VGS = 0 V
0.47 0.75 1.1
V
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.01.
BSS138PS
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 2 November 2010
6 of 16
BSS138PS
Nexperia
60 V, 320 mA dual N-channel Trench MOSFET
017aaa112
017aaa113
−3
1.0
10
V
GS
= 3.5 V
3.0 V
2.75 V
I
D
(A)
I
D
(A)
0.8
2.5 V
−4
−5
−6
10
10
10
(1)
(2)
(3)
0.6
0.4
0.2
0.0
2.25 V
2.0 V
0.0
1.0
2.0
3.0
4.0
0.0
0.5
1.0
1.5
2.0
V
(V)
V
GS
(V)
DS
Tamb = 25 °C
Tamb = 25 °C; VDS = 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 6. Per transistor: Output characteristics: drain
current as a function of drain-source voltage;
typical values
Fig 7. Per transistor: Sub-threshold drain current as
a function of gate-source voltage
017aaa114
017aaa115
5.0
6.0
R
DSon
(Ω)
(1)
(2)
R
DSon
(Ω)
4.0
3.0
2.0
1.0
0.0
4.0
2.0
0.0
(1)
(2)
(3)
(4)
(5)
0.0
0.2
0.4
0.6
0.8
1.0
0.0
2.0
4.0
6.0
8.0
V
GS
10.0
(V)
I
(A)
D
Tamb = 25 °C
(1) VGS = 2 V
(2) GS = 2.5 V
I
D = 300 mA
(1) Tamb = 150 °C
(2) amb = 25 °C
V
T
(3) VGS = 3 V
(4) VGS = 3.5 V
(5)
VGS = 10 V
Fig 8. Per transistor: Drain-source on-state
Fig 9. Per transistor: Drain-source on-state
resistance as a function of gate-source
voltage; typical values
resistance as a function of drain current;
typical values
BSS138PS
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 2 November 2010
7 of 16
BSS138PS
Nexperia
60 V, 320 mA dual N-channel Trench MOSFET
017aaa116
017aaa022
0.8
2.4
I
a
D
(A)
(1)
(2)
0.6
1.8
1.2
0.6
0.0
0.4
0.2
0.0
(2)
(1)
0.0
1.0
2.0
3.0
−60
0
60
120
180
(°C)
V
GS
(V)
T
amb
VDS > ID × RDSon
RDSon
a =
-----------------------------
RDSon(25°C)
(1) Tamb = 25 °C
(2) Tamb = 150 °C
Fig 10. Per transistor: Transfer characteristics: drain
current as a function of gate-source voltage;
typical values
Fig 11. Per transistor: Normalized drain-source
on-state resistance as a function of ambient
temperature; typical values
017aaa117
017aaa118
2
2.0
10
V
GS(th)
(V)
(1)
C
(pF)
(1)
1.5
1.0
0.5
0.0
(2)
(3)
(2)
10
(3)
1
10
−1
2
−60
0
60
120
180
(°C)
1
10
10
T
amb
V
DS
(V)
ID = 0.25 mA; VDS = VGS
f = 1 MHz; VGS = 0 V
(1) Ciss
(1) maximum values
(2) typical values
(2) Coss
(3) Crss
(3) minimum values
Fig 12. Per transistor: Gate-source threshold voltage
as a function of ambient temperature
Fig 13. Per transistor: Input, output and reverse
transfer capacitances as a function of
drain-source voltage; typical values
BSS138PS
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 2 November 2010
8 of 16
BSS138PS
Nexperia
60 V, 320 mA dual N-channel Trench MOSFET
017aaa119
5.0
V
GS
(V)
4.0
V
DS
I
D
3.0
2.0
1.0
0.0
V
GS(pl)
V
GS(th)
V
GS
Q
Q
GS2
GS1
Q
Q
GD
GS
Q
G(tot)
0.0
0.2
0.4
0.6
0.8
Q
G
(nC)
003aaa508
ID = 300 mA; VDS = 30 V; Tamb = 25 °C
Fig 14. Per transistor: Gate-source voltage as a
function of gate charge; typical values
Fig 15. Per transistor: Gate charge waveform
definitions
017aaa120
1.2
I
S
(A)
0.8
(1)
(2)
0.4
0.0
0.0
0.4
0.8
1.2
V
SD
(V)
VGS = 0 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
Fig 16. Per transistor: Source current as a function of source-drain voltage; typical values
BSS138PS
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 2 November 2010
9 of 16
BSS138PS
Nexperia
60 V, 320 mA dual N-channel Trench MOSFET
8. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig 17. Duty cycle definition
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
BSS138PS
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 2 November 2010
10 of 16
BSS138PS
Nexperia
60 V, 320 mA dual N-channel Trench MOSFET
9. Package outline
Plastic surface-mounted package; 6 leads
SOT363
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
1
2
3
c
e
1
b
L
p
w
M B
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max
0.30
0.20
1.1
0.8
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.25
0.15
mm
0.1
1.3
0.65
0.2
0.2
0.1
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
04-11-08
06-03-16
SOT363
SC-88
Fig 18. Package outline SOT363 (SC-88)
BSS138PS
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 2 November 2010
11 of 16
BSS138PS
Nexperia
60 V, 320 mA dual N-channel Trench MOSFET
10. Soldering
2.65
solder lands
0.4 (2×)
1.5
2.35
0.6
(4×)
0.5
(4×)
solder resist
solder paste
0.5
(4×)
0.6
(2×)
occupied area
Dimensions in mm
0.6
(4×)
1.8
sot363_fr
Fig 19. Reflow soldering footprint SOT363 (SC-88)
1.5
solder lands
solder resist
occupied area
2.5
0.3
4.5
1.5
Dimensions in mm
preferred transport
direction during soldering
1.3
1.3
2.45
5.3
sot363_fw
Fig 20. Wave soldering footprint SOT363 (SC-88)
BSS138PS
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 2 November 2010
12 of 16
BSS138PS
Nexperia
60 V, 320 mA dual N-channel Trench MOSFET
11. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BSS138PS v.1
20101102
Product data sheet
-
-
BSS138PS
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 2 November 2010
13 of 16
BSS138PS
Nexperia
60 V, 320 mA dual N-channel Trench MOSFET
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nexperia.com.
malfunction of a Nexperia product can reasonably be expected
12.2 Definitions
to result in personal injury, death or severe property or environmental
damage. Nexperia accepts no liability for inclusion and/or use of
Nexperia products in such equipment or applications and
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the Nexperia
product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
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applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
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shall an agreement be valid in which the Nexperia product is
deemed to offer functions and qualities beyond those described in the
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damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
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the products or of the application or use by customer’s third party
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12.3 Disclaimers
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
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Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
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changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
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safety-critical systems or equipment, nor in applications where failure or
BSS138PS
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 2 November 2010
14 of 16
BSS138PS
Nexperia
60 V, 320 mA dual N-channel Trench MOSFET
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
BSS138PS
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 2 November 2010
15 of 16
BSS138PS
Nexperia
60 V, 320 mA dual N-channel Trench MOSFET
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test information. . . . . . . . . . . . . . . . . . . . . . . . 10
Quality information . . . . . . . . . . . . . . . . . . . . . 10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
3
4
5
6
7
8
8.1
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 15
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 02 November 2010
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