BUK9J0R9-40H [NEXPERIA]

N-channel 40 V, 0.9 mΩ logic level MOSFET in LFPAK56EProduction;


型号：	BUK9J0R9-40H
厂家：	Nexperia
描述：	N-channel 40 V, 0.9 mΩ logic level MOSFET in LFPAK56EProduction
文件：	总12页 (文件大小：277K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BUK9J0R9-40H

N-channel 40 V, 0.9 mΩ logic level MOSFET in LFPAK56E

7 October 2019

Product data sheet

1. General description

Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction

technology, housed in an enhanced LFPAK56E package. This product has been fully designed and

qualified to meet AEC-Q101 requirements delivering high performance and endurance.

2. Features and benefits

•

Fully automotive qualified to AEC-Q101:

175 °C rating suitable for thermally demanding environments

Trench 9 Superjunction technology:

•

Reduced cell pitch enables enhanced power density and efficiency with lower R_DSonin

same footprint

•

Improved SOA and avalanche capability compared to standard TrenchMOS

Tight V_GS(th)limits enable easy paralleling of MOSFETs

•

LFPAK Gull Wing leads:

•

High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike

traditional QFN packages

•

Visual (AOI) soldering inspection, no need for expensive x-ray equipment

Easy solder wetting for good mechanical solder joint

•

LFPAK copper clip technology:

•

Improved reliability, with reduced R_thand R_DSon

Increases maximum current capability and improved current spreading

3. Applications

•

12 V automotive systems

Motors, lamps and solenoid control

Start-Stop micro-hybrid applications

Transmission control

Ultra high performance power switching

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 2

I_D

[1]

220

500

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

Fig. 11

0.53

0.82

0.94

mΩ

Nexperia

BUK9J0R9-40H

N-channel 40 V, 0.9 mΩ logic level MOSFET in LFPAK56E

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Dynamic characteristics

Q_GD

gate-drain charge

I_D= 25 A; V_DS= 20 V; V_GS= 4.5 V;

Fig. 13; Fig. 14

12.7

25.3

Source-drain diode

Q_r

recovered charge

I_S= 25 A; dI_S/dt = -100 A/µs; V_GS= 0 V; [2]

V_DS= 20 V; T_j= 25 °C

52.6

0.77

softness factor

I_S= 25 A; dI_S/dt = -100 A/µs; V_GS= 0 V;

V_DS= 20 V; T_j= 25 °C; Fig. 17

[1] 220A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,

thermal design and operating temperature.

[2] includes capacitive recovery

5. Pinning information

Table 2. Pinning information

Symbol

Description

source

gate

Simplified outline

Graphic symbol

mbb076

mounting base; connected

to drain

LFPAK56E; Power-

SO8 (SOT1023)

6. Ordering information

Table 3. Ordering information

Type number

Package

Name

Description

Version

BUK9J0R9-40H

LFPAK56E;

Power-SO8

plastic, single-ended surface-mounted package (LFPAK56);

4 leads; 1.27 mm pitch

SOT1023

7. Marking

Table 4. Marking codes

Type number

Marking code

BUK9J0R9-40H

90H940E

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_DS

Parameter

Conditions

Min

Max

Unit

drain-source voltage

gate-source voltage

25 °C ≤ T_j≤ 175 °C

DC; T_j≤ 175 °C

V_GS

-10

BUK9J0R9-40H

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Product data sheet

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Nexperia

BUK9J0R9-40H

N-channel 40 V, 0.9 mΩ logic level MOSFET in LFPAK56E

Symbol

P_tot

Parameter

Conditions

Min

Max

500

220

600

175

Unit

total power dissipation

drain current

T_mb= 25 °C; Fig. 1

I_D

V_GS= 10 V; T_mb= 25 °C; Fig. 2

V_GS= 10 V; T_mb= 100 °C; Fig. 2

pulsed; t_p≤ 10 µs; T_mb= 25 °C; Fig. 3

[1]

I_DM

T_stg

T_j

peak drain current

storage temperature

junction temperature

-55

°C

Source-drain diode

I_S

source current

peak source current

T_mb= 25 °C

[2]

165

600

I_SM

pulsed; t_p≤ 10 µs; T_mb= 25 °C

Avalanche ruggedness

E_DS(AL)S

non-repetitive drain-

I_D= 160 A; V_sup≤ 40 V; R_GS= 50 Ω;

source avalanche energy V_GS= 10 V; T_j(init)= 25 °C; unclamped;

Fig. 4

[3] [4]

290

[1] 220A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,

thermal design and operating temperature.

[2] 165A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,

thermal design and operating temperature.

[3] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.

[4] Refer to application note AN10273 for further information.

03aa16

aaa-028015

120

500

400

300

200

100

(A)

der

(%)

(1)

100

150

200

75 100 125 150 175 200

(°C)

V_GS≥ 10 V

(1) 220A continuous current has been successfully

demonstrated during application tests. Practically

the current will be limited by PCB, thermal design

and operating temperature.

Fig. 1. Normalized total power dissipation as a

function of mounting base temperature

Fig. 2. Continuous drain current as a function of

mounting base temperature

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Product data sheet

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Nexperia

BUK9J0R9-40H

N-channel 40 V, 0.9 mΩ logic level MOSFET in LFPAK56E

aaa-027341

= 10 µs

Limit R

= V / I

DS D

DSon

(A)

100 µs

1 ms

10 ms

100 ms

-1

(V)

T_mb= 25 °C; I_DMis a single pulse

Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

aaa-027337

(A)

(1)

(2)

(3)

-1

-3

-2

-1

(ms)

(1) T_{j (init)}= 25 °C; (2) T_{j (init)}= 150 °C; (3) Repetitive Avalanche

Fig. 4. Avalanche rating; avalanche current as a function of avalanche time

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

0.3

Unit

R_th(j-mb)

thermal resistance from Fig. 5

junction to mounting

base

0.21

K/W

BUK9J0R9-40H

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Product data sheet

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Nexperia

BUK9J0R9-40H

N-channel 40 V, 0.9 mΩ logic level MOSFET in LFPAK56E

aaa-027339

th(j-mb)

(K/W)

δ = 0.5

-1

-2

-3

0.2

0.1

0.05

δ =

0.02

single shot

-6

-5

-4

-3

-2

-1

(s)

Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration

10. Characteristics

Table 7. Characteristics

Symbol

Static characteristics

V_(BR)DSSdrain-source

breakdown voltage

Parameter

Conditions

Min

Typ

Max

Unit

I_D= 250 µA; V_GS= 0 V; T_j= 25 °C

I_D= 250 µA; V_GS= 0 V; T_j= -40 °C

I_D= 250 µA; V_GS= 0 V; T_j= -55 °C

40.5

1.35

V_GS(th)

gate-source threshold I_D= 1 mA; V_DS=V_GS; T_j= 25 °C; Fig. 9;

1.66

2.05

voltage

Fig. 10

I_D= 1 mA; V_DS=V_GS; T_j= 175 °C;

Fig. 10

0.6

I_D= 1 mA; V_DS=V_GS; T_j= -55 °C; Fig. 10

V_DS= 40 V; V_GS= 0 V; T_j= 25 °C

V_DS= 16 V; V_GS= 0 V; T_j= 125 °C

V_DS= 40 V; V_GS= 0 V; T_j= 175 °C

V_GS= 16 V; V_DS= 0 V; T_j= 25 °C

V_GS= -10 V; V_DS= 0 V; T_j= 25 °C

2.5

I_DSS

drain leakage current

gate leakage current

0.4

3.2

405

µA

1000 µA

I_GSS

100

BUK9J0R9-40H

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Product data sheet

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BUK9J0R9-40H

N-channel 40 V, 0.9 mΩ logic level MOSFET in LFPAK56E

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

R_DSon

drain-source on-state

resistance

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

Fig. 11

0.53

0.82

0.94

mΩ

V_GS= 10 V; I_D= 25 A; T_j= 105 °C;

Fig. 12

0.79

0.87

1.1

1.17

1.29

1.63

0.97

1.47

1.62

2.03

1.04

1.48

1.64

2.05

1.2

mΩ

V_GS= 10 V; I_D= 25 A; T_j= 125 °C;

Fig. 12

V_GS= 10 V; I_D= 25 A; T_j= 175 °C;

Fig. 12

V_GS= 4.5 V; I_D= 25 A; T_j= 25 °C;

Fig. 11

0.68

V_GS= 4.5 V; I_D= 25 A; T_j= 105 °C;

Fig. 12

1.9

V_GS= 4.5 V; I_D= 25 A; T_j= 125 °C;

Fig. 12

1.1

2.1

V_GS= 4.5 V; I_D= 25 A; T_j= 175 °C;

Fig. 12

1.4

2.6

R_G

gate resistance

f = 1 MHz; T_j= 25 °C

0.42

2.6

Dynamic characteristics

Q_G(tot)

total gate charge

I_D= 25 A; V_DS= 20 V; V_GS= 10 V;

Fig. 13; Fig. 14

120

168

I_D= 25 A; V_DS= 20 V; V_GS= 4.5 V;

Fig. 13; Fig. 14

54.2

20.2

12.7

Q_GS

Q_GD

C_iss

C_oss

C_rss

gate-source charge

gate-drain charge

input capacitance

output capacitance

30.2

25.3

V_DS= 25 V; V_GS= 0 V; f = 1 MHz;

T_j= 25 °C; Fig. 15

8977 12568 pF

1549 2168 pF

reverse transfer

capacitance

346

760

t_d(on)

t_r

t_d(off)

t_f

turn-on delay time

rise time

V_DS= 20 V; R_L= 0.8 Ω; V_GS= 4.5 V;

R_G(ext)= 5 Ω

45.4

46.2

59.2

32.6

turn-off delay time

fall time

Source-drain diode

V_SD

t_rr

source-drain voltage

I_S= 25 A; V_GS= 0 V; T_j= 25 °C; Fig. 16

0.76

44.6

52.6

0.77

1.2

reverse recovery time I_S= 25 A; dI_S/dt = -100 A/µs; V_GS= 0 V;

V_DS= 20 V; T_j= 25 °C

Q_r

recovered charge

[1]

softness factor

I_S= 25 A; dI_S/dt = -100 A/µs; V_GS= 0 V;

V_DS= 20 V; T_j= 25 °C; Fig. 17

I_S= 25 A; dI_S/dt = -500 A/µs; V_GS= 0 V;

V_DS= 20 V; T_j= 25 °C; Fig. 17

0.67

[1] includes capacitive recovery

BUK9J0R9-40H

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Product data sheet

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Nexperia

BUK9J0R9-40H

N-channel 40 V, 0.9 mΩ logic level MOSFET in LFPAK56E

aaa-027342

aaa-027343

400

DSon

(A)

(mΩ)

3.5 V

320

240

160

4.5 V

10 V

= 3 V

2.8 V

2.6 V

(V)

T_j= 25 °C

T_j= 25 °C; I_D= 25 A

Fig. 6. Output characteristics; drain current as a

function of drain-source voltage; typical values

Fig. 7. Drain-source on-state resistance as a function

of gate-source voltage; typical values

aaa-027344

aaa-027637

-1

400

(A)

-2

-3

-4

-5

-6

300

200

100

Min

Typ

Max

175°C

25°C

T = -55°C

0.5

1.5

2.5

(V)

V_DS= 8 V

T_j= 25 °C; V_DS= 5 V

Fig. 8. Transfer characteristics; drain current as a

function of gate-source voltage; typical values

Fig. 9. Sub-threshold drain current as a function of

gate-source voltage

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Product data sheet

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Nexperia

BUK9J0R9-40H

N-channel 40 V, 0.9 mΩ logic level MOSFET in LFPAK56E

aaa-027638

aaa-027345

GS(th)

(V)

(mΩ)

DSon

3 V

2.5

Max

1.5

3.5 V

4.5 V

Typ

Min

= 10 V

0.5

-60 -30

90 120 150 180

50 100 150 200 250 300 350 400

(A)

T (°C)

I_D= 1 mA ; V_DS= V_GS

Fig. 10. Gate-source threshold voltage as a function of Fig. 11. Drain-source on-state resistance as a function

junction temperature of drain current; typical values

T_j= 25 °C

aaa-027640

aaa-027346

2.4

(V)

2.1

1.8

1.5

1.2

0.9

0.6

= 4.5 V

= 14 V

10 V

20 V

-60 -30

90 120 150 180

T (°C)

100

120

(nC)

140

T_j= 25 °C; I_D= 25 A

Fig. 13. Gate-source voltage as a function of gate

charge; typical values

Fig. 12. Normalized drain-source on-state resistance

factor as a function of junction temperature

BUK9J0R9-40H

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Product data sheet

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Nexperia

BUK9J0R9-40H

N-channel 40 V, 0.9 mΩ logic level MOSFET in LFPAK56E

aaa-027347

(pF)

GS(pl)

iss

GS(th)

oss

GS2

GS1

G(tot)

rss

003aaa508

Fig. 14. Gate charge waveform definitions

-1

(V)

V_GS= 0 V; f = 1 MHz

Fig. 15. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

003aaf444

aaa-027348

400

320

240

160

(A)

0.25 I

175°C

T = 25°C

S =

0.2

0.4

0.6

0.8

(V)

1.2

t (s)

V_GS= 0 V

Fig. 17. Reverse recovery timing definition

Fig. 16. Source-drain (diode forward) current as a

function of source-drain (diode forward)

voltage; typical values

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Product data sheet

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Nexperia

BUK9J0R9-40H

N-channel 40 V, 0.9 mΩ logic level MOSFET in LFPAK56E

11. Package outline

Plastic single-ended surface-mounted package (LFPAK56E); 4 leads

SOT1023

(3x)

mounting

base

detail X

2.5

5 mm

scale

Dimensions

Unit

(1)

max 1.10 0.15 0.50 4.41

nom

min 0.95 0.00 0.35 3.62

0.25 0.30 4.70 4.45 5.30 3.7

6.2 1.3 0.85

5.9 0.8 0.40

0.85

1.27

0.25 0.1

0.19 0.24 4.45

4.95 3.5

Note

1. Plastic or metal protrusions of 0.15 mm per side are not included.

sot1023_po

References

Outline

version

European

projection

Issue date

IEC

JEDEC

JEITA

13-03-05

17-07-31

SOT1023

Fig. 18. Package outline LFPAK56E; Power-SO8 (SOT1023)

BUK9J0R9-40H

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Product data sheet

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Nexperia

BUK9J0R9-40H

N-channel 40 V, 0.9 mΩ logic level MOSFET in LFPAK56E

equipment, nor in applications where failure or malfunction of an Nexperia

product can reasonably be expected to result in personal injury, death or

severe property or environmental damage. Nexperia and its suppliers accept

no liability for inclusion and/or use of Nexperia products in such equipment or

applications and therefore such inclusion and/or use is at the customer's own

risk.

12. Legal information

Data sheet status

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Document status Product

Definition

[1][2]

status [3]

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no representation

or warranty that such applications will be suitable for the specified use

without further testing or modification.

Objective [short]

data sheet

Development

This document contains data from

the objective specification for

product development.

Preliminary [short]

data sheet

Qualification

Production

This document contains data from

the preliminary specification.

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and products using Nexperia products, and Nexperia accepts no liability for

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Customers should provide appropriate design and operating safeguards to

minimize the risks associated with their applications and products.

Product [short]

data sheet

This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

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multiple devices. The latest product status information is available on

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Nexperia does not accept any liability related to any default, damage, costs

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

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Product data sheet

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Nexperia

BUK9J0R9-40H

N-channel 40 V, 0.9 mΩ logic level MOSFET in LFPAK56E

Contents

1. General description......................................................1

2. Features and benefits.................................................. 1

3. Applications.................................................................. 1

4. Quick reference data....................................................1

5. Pinning information......................................................2

6. Ordering information....................................................2

7. Marking..........................................................................2

8. Limiting values............................................................. 2

9. Thermal characteristics............................................... 4

10. Characteristics............................................................5

11. Package outline........................................................ 10

12. Legal information......................................................11

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 7 October 2019

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BUK9J0R9-40H [NEXPERIA]

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