BUK9K22-80E [NEXPERIA]

Dual N-channel 80 V, 22 mΩ logic level MOSFETProduction;


型号：	BUK9K22-80E
厂家：	Nexperia
描述：	Dual N-channel 80 V, 22 mΩ logic level MOSFETProduction
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BUK9K22-80E

Dual N-channel 80 V, 22 mΩ logic level MOSFET

11 May 2018

Product data sheet

1. General description

Dual Logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using

TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for

use in high performance automotive applications.

2. Features and benefits

•

Dual MOSFET

•

AEC-Q101 compliant

Repetitive avalanche rated

Suitable for thermally demanding environments due to 175 °C rating

True logic level gate with V_GS(th)rating of greater than 0.5 V at 175 °C

3. Applications

•

12 V, 24 V and 48 V automotive systems

Motors, lamps and solenoid control

Transmission control

Ultra high performance power switching

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Limiting values FET1 and FET2

V_DS

I_D

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 5 V; T_mb= 25 °C; Fig. 2

P_tot

T_j

total power dissipation T_mb= 25 °C; Fig. 1

junction temperature

°C

-55

175

Static characteristics FET1 and FET2

R_DSon

drain-source on-state

resistance

V_GS= 5 V; I_D= 10 A; T_j= 175 °C;

Fig. 12

54.5

21.7

mΩ

V_GS= 5 V; I_D= 10 A; T_j= 25 °C; Fig. 11

15.7

Dynamic characteristics FET1 and FET2

Q_GD

gate-drain charge

total gate charge

I_D= 10 A; V_DS= 64 V; V_GS= 5 V;

T_j= 25 °C; Fig. 13; Fig. 14

8.4

Q_G(tot)

23.1

Nexperia

BUK9K22-80E

Dual N-channel 80 V, 22 mΩ logic level MOSFET

5. Pinning information

Table 2. Pinning information

Symbol Description

Simplified outline

Graphic symbol

source1

gate1

source2

gate2

drain2

drain1

mbk725

LFPAK56D (SOT1205)

6. Ordering information

Table 3. Ordering information

Type number

Package

Name

Description

Version

BUK9K22-80E

LFPAK56D

plastic, single ended surface mounted package (LFPAK56D); 8

leads

SOT1205

7. Marking

Table 4. Marking codes

Type number

Marking code

BUK9K22-80E

92280E

BUK9K22-80E

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Product data sheet

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Nexperia

BUK9K22-80E

Dual N-channel 80 V, 22 mΩ logic level MOSFET

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Limiting values FET1 and FET2

V_DS

drain-source voltage

drain-gate voltage

gate-source voltage

25 °C ≤ T_j≤ 175 °C

175

V_DGR

V_GS

R_GS= 20 kΩ

DC; T_j≤ 175 °C

-10

Pulsed; T_j≤ 175 °C

[1] [2] -15

P_tot

I_D

total power dissipation

drain current

T_mb= 25 °C; Fig. 1

V_GS= 5 V; T_mb= 25 °C; Fig. 2

V_GS= 5 V; T_sp= 100 °C; Fig. 2

pulsed; t_p≤ 10 µs; T_mb= 25 °C; Fig. 3

I_DM

T_stg

T_j

peak drain current

storage temperature

junction temperature

-55

°C

Source-drain diode FET1 and FET2

I_S

source current

T_mb= 25 °C

I_SM

peak source current

pulsed; t_p≤ 10 µs; T_mb= 25 °C

Avalanche ruggedness FET1 and FET2

E_DS(AL)S

non-repetitive drain-

source avalanche

energy

I_D= 21 A; V_sup≤ 80 V; R_GS= 50 Ω;

V_GS= 5 V; T_j(init)= 25 °C; unclamped;

Fig. 4

[3] [4]

116

[1] Accumulated pulse duration up to 50 hours delivers zero defect ppm

[2] Significantly longer life times are achieved by lowering T_jand or V_GS

[3] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C

[4] Refer to application note AN10273 for further information

BUK9K22-80E

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Product data sheet

11 May 2018

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Nexperia

BUK9K22-80E

Dual N-channel 80 V, 22 mΩ logic level MOSFET

03aa16

aaa-026831

120

(A)

der

(%)

100

150

200

75 100 125 150 175 200

(°C)

V_GS≥ 5 V

Fig. 2. Continuous drain current as a function of

mounting base temperature, FET1 and FET2

Fig. 1. Normalized total power dissipation as a

function of mounting base temperature

aaa-026747

Limit R

= V / I

DS D

DSon

= 10 µs

(A)

100 µs

1 ms

10 ms

100 ms

-1

-2

-1

(V)

T_mb= 25 °C; I_DMis a single pulse

Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage, FET1 and

FET2

BUK9K22-80E

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Product data sheet

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Nexperia

BUK9K22-80E

Dual N-channel 80 V, 22 mΩ logic level MOSFET

aaa-026828

(A)

(1)

(2)

(3)

-1

-2

-3

-2

-1

(ms)

(1) T_{j (init)}= 25°C; (2) T_{j (init)}= 150°C; (3) Repetitive Avalanche

Fig. 4. Avalanche rating; avalanche current as a function of avalanche time, FET1 and FET2

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

R_th(j-mb)

thermal resistance

from junction to

mounting base

Fig. 5

2.36

K/W

R_th(j-a)

thermal resistance

from junction to

ambient

Minimum footprint; mounted on a

printed circuit board

K/W

003aaj748

th(j-mb)

(K/W)

δ = 0.5

0.2

0.1

0.05

0.02

-1

δ =

single shot

-2

-6

-5

-4

-3

-2

-1

(s)

Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration, FET1 and

FET2

BUK9K22-80E

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Product data sheet

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Nexperia

BUK9K22-80E

Dual N-channel 80 V, 22 mΩ logic level MOSFET

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics FET1 and FET2

V_(BR)DSS

drain-source

breakdown voltage

I_D= 250 µA; V_GS= 0 V; T_j= 25 °C

I_D= 250 µA; V_GS= 0 V; T_j= -55 °C

1.4

V_GS(th)

gate-source threshold I_D= 1 mA; V_DS=V_GS; T_j= 25 °C; Fig. 9;

1.7

2.1

voltage

Fig. 10

I_D= 1 mA; V_DS=V_GS; T_j= -55 °C;

Fig. 10

2.45

I_D= 1 mA; V_DS=V_GS; T_j= 175 °C;

Fig. 10

0.5

I_DSS

drain leakage current

gate leakage current

V_DS= 80 V; V_GS= 0 V; T_j= 25 °C

V_DS= 80 V; V_GS= 0 V; T_j= 175 °C

V_GS= 10 V; V_DS= 0 V; T_j= 25 °C

V_GS= -10 V; V_DS= 0 V; T_j= 25 °C

V_GS= 5 V; I_D= 10 A; T_j= 25 °C; Fig. 11

0.01

µA

500

100

21.7

I_GSS

R_DSon

drain-source on-state

resistance

15.7

14.4

mΩ

V_GS= 10 V; I_D= 10 A; T_j= 25 °C;

Fig. 11

V_GS= 5 V; I_D= 10 A; T_j= 175 °C;

Fig. 12

54.5

mΩ

Dynamic characteristics FET1 and FET2

Q_G(tot)

Q_GS

Q_GD

C_iss

total gate charge

gate-source charge

gate-drain charge

input capacitance

output capacitance

I_D= 10 A; V_DS= 64 V; V_GS= 5 V;

T_j= 25 °C; Fig. 13; Fig. 14

23.1

5.4

8.4

V_DS= 25 V; V_GS= 0 V; f = 1 MHz;

T_j= 25 °C; Fig. 15

2342 3115 pF

C_oss

C_rss

170

204

122

reverse transfer

capacitance

t_d(on)

t_r

t_d(off)

t_f

turn-on delay time

rise time

V_DS= 60 V; R_L= 5 Ω; V_GS= 5 V;

R_G(ext)= 5 Ω; T_j= 25 °C

13.9

24.9

28.6

20.6

turn-off delay time

fall time

Source-drain diode FET1 and FET2

V_SD

t_rr

source-drain voltage

I_S= 10 A; V_GS= 0 V; T_j= 25 °C; Fig. 16

0.8

28.4

1.2

reverse recovery time I_S= 10 A; dI_S/dt = -100 A/µs; V_GS= 0 V;

V_DS= 25 V; T_j= 25 °C

Q_r

recovered charge

BUK9K22-80E

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Product data sheet

11 May 2018

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Nexperia

BUK9K22-80E

Dual N-channel 80 V, 22 mΩ logic level MOSFET

aaa-026748

aaa-026851

3 V

4.5 V

10 V

DSon

(A)

(mΩ)

=2.8 V

2.6 V

2.4 V

(V)

T_j= 25 °C

T_j= 25 °C; I_D= 10 A

Fig. 6. Output characteristics; drain current as a

function of drain-source voltage; typical

values, FET1 and FET2

Fig. 7. Drain-source on-state resistance as a function

of gate-source voltage; typical values, FET1

and FET2

aaa-026852

003aah026

10^-1

I_D

(A)

10^-2

min

typ

max

10^-3

10^-4

10^-5

10^-6

175°C

T = 25°C

V_GS(V)

(V)

V_DS= 12 V

T_j= 25 °C; V_DS= 5 V

Fig. 8. Transfer characteristics; drain current as a

function of gate-source voltage; typical values,

FET1 and FET2

Fig. 9. Sub-threshold drain current as a function of

gate-source voltage, FET1 and FET2

BUK9K22-80E

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Product data sheet

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Nexperia

BUK9K22-80E

Dual N-channel 80 V, 22 mΩ logic level MOSFET

aaa-026853

003aah025

V_GS(th)

DSon

2.6 V

2.8 V

3 V

(V)

2.5

(mΩ)

max

typ

1.5

min

4.5 V

0.5

= 10 V

-60

120

180

I (A)

T ( C)

T_j= 25 °C

I_D= 1 mA ; V_DS= V_GS

Fig. 11. Drain-source on-state resistance as a function

of drain current; typical values, FET1 and FET2

Fig. 10. Gate-source threshold voltage as a function of

junction temperature, FET1 and FET2

003aaj818

aaa-026854

(V)

2.4

= 14 V

1.8

1.2

0.6

64 V

-60

120

180

(nC)

T_j°C)

(

T_j= 25 °C; I_D= 10 A

Fig. 13. Gate-source voltage as a function of gate

charge; typical values, FET1 and FET2

Fig. 12. Normalized drain-source on-state resistance

factor as a function of junction temperature,

FET1 and FET2

BUK9K22-80E

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Product data sheet

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Nexperia

BUK9K22-80E

Dual N-channel 80 V, 22 mΩ logic level MOSFET

aaa-026855

(pF)

iss

GS(pl)

GS(th)

oss

GS2

rss

GS1

G(tot)

003aaa508

Fig. 14. Gate charge waveform definitions

-1

(V)

V_GS= 0 V; f = 1 MHz

Fig. 15. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values, FET1 and FET2

aaa-026856

(A)

175°C

0.4

T = 25°C

0.2

0.6

0.8

(V)

1.2

V_GS= 0 V

Fig. 16. Source-drain (diode forward) current as a function of source-drain (diode forward) voltage; typical values,

FET1 and FET2

BUK9K22-80E

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Product data sheet

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Nexperia

BUK9K22-80E

Dual N-channel 80 V, 22 mΩ logic level MOSFET

11. Package outline

Plastic single ended surface mounted package LFPAK56D; 8 leads

SOT1205

mounting

base

(8x)

detail X

2.5

5 mm

scale

Dimensions

Unit

(ref)

(1)

max 1.05 0.1 0.50 4.4 0.25 0.30 4.70 4.55 3.5 5.30 1.8 0.85

nom

min 1.02 0.0 0.35 4.1 0.19 0.24 4.45 4.35 3.4 4.95 1.6 0.60

6.2 1.3 0.55 0.85

5.9 0.8 0.30 0.40

1.27

0.25 0.1

Note

1. Plastic or metal protrusions of 0.2 mm maximum per side are not included.

sot1205_po

Issue date

References

Outline

version

European

projection

IEC

JEDEC

JEITA

14-08-21

14-10-28

SOT1205

Fig. 17. Package outline LFPAK56D (SOT1205)

BUK9K22-80E

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Product data sheet

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Nexperia

BUK9K22-80E

Dual N-channel 80 V, 22 mΩ logic level MOSFET

Suitability for use in automotive applications — This Nexperia product

has been qualified for use in automotive applications. Unless otherwise

agreed in writing, the product is not designed, authorized or warranted to

be suitable for use in life support, life-critical or safety-critical systems or

equipment, nor in applications where failure or malfunction of an Nexperia

product can reasonably be expected to result in personal injury, death or

severe property or environmental damage. Nexperia and its suppliers accept

no liability for inclusion and/or use of Nexperia products in such equipment or

applications and therefore such inclusion and/or use is at the customer's own

risk.

12. Legal information

Data sheet status

Document status Product

Definition

[1][2]

status [3]

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Objective [short]

data sheet

Development

This document contains data from

the objective specification for

product development.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no representation

or warranty that such applications will be suitable for the specified use

without further testing or modification.

Preliminary [short]

data sheet

Qualification

Production

This document contains data from

the preliminary specification.

Product [short]

data sheet

This document contains the product

specification.

Customers are responsible for the design and operation of their applications

and products using Nexperia products, and Nexperia accepts no liability for

any assistance with applications or customer product design. It is customer’s

sole responsibility to determine whether the Nexperia product is suitable

and fit for the customer’s applications and products planned, as well as

for the planned application and use of customer’s third party customer(s).

Customers should provide appropriate design and operating safeguards to

minimize the risks associated with their applications and products.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the internet at https://www.nexperia.com.

Nexperia does not accept any liability related to any default, damage, costs

or problem which is based on any weakness or default in the customer’s

applications or products, or the application or use by customer’s third party

customer(s). Customer is responsible for doing all necessary testing for the

customer’s applications and products using Nexperia products in order to

avoid a default of the applications and the products or of the application or

use by customer’s third party customer(s). Nexperia does not accept any

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Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Nexperia does not give any representations or

warranties as to the accuracy or completeness of information included herein

and shall have no liability for the consequences of use of such information.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is

intended for quick reference only and should not be relied upon to contain

detailed and full information. For detailed and full information see the relevant

full data sheet, which is available on request via the local Nexperia sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall prevail.

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sold subject to the general terms and conditions of commercial sale, as

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data sheet shall define the specification of the product as agreed between

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beyond those described in the Product data sheet.

Disclaimers

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or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

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Limited warranty and liability — Information in this document is believed

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Notice: All referenced brands, product names, service names and

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Notwithstanding any damages that customer might incur for any reason

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to information published in this document, including without limitation

specifications and product descriptions, at any time and without notice. This

document supersedes and replaces all information supplied prior to the

publication hereof.

BUK9K22-80E

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Product data sheet

11 May 2018

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Nexperia

BUK9K22-80E

Dual N-channel 80 V, 22 mΩ logic level MOSFET

Contents

1. General description......................................................1

2. Features and benefits.................................................. 1

3. Applications.................................................................. 1

4. Quick reference data....................................................1

5. Pinning information......................................................2

6. Ordering information....................................................2

7. Marking..........................................................................2

8. Limiting values............................................................. 3

9. Thermal characteristics............................................... 5

10. Characteristics............................................................6

11. Package outline........................................................ 10

12. Legal information.......................................................11

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 11 May 2018

BUK9K22-80E

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Product data sheet

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BUK9K22-80E [NEXPERIA]

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