BUK9M43-100E [NEXPERIA]
N-channel 100 V, 43 mΩ logic level MOSFET in LFPAK33Production;型号: | BUK9M43-100E |
厂家: | Nexperia |
描述: | N-channel 100 V, 43 mΩ logic level MOSFET in LFPAK33Production |
文件: | 总13页 (文件大小:276K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BUK9M43-100E
N-channel 100 V, 43 mΩ logic level MOSFET in LFPAK33
2 October 2017
Product data sheet
1. General description
Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high performance
automotive applications.
2. Features and benefits
•
Q101 compliant
•
•
•
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
3. Applications
•
•
•
•
12 V, 24 V and 48 V automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
VDS
Parameter
Conditions
Min
Typ
Max
100
25
Unit
V
drain-source voltage
drain current
25 °C ≤ Tj ≤ 175 °C
VGS = 5 V; Tmb = 25 °C; Fig. 2
-
-
-
-
-
-
ID
A
Ptot
total power dissipation Tmb = 25 °C; Fig. 1
75
W
Static characteristics
RDSon drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
VGS = 5 V; ID = 5 A; Tj = 25 °C; Fig. 11
-
-
35
43
-
mΩ
nC
ID = 5 A; VDS = 80 V; VGS = 5 V;
Tj = 25 °C; Fig. 13; Fig. 14
8.2
Nexperia
BUK9M43-100E
N-channel 100 V, 43 mΩ logic level MOSFET in LFPAK33
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
S
S
S
G
D
Source
Source
Source
Gate
D
S
2
G
3
4
mbb076
mb
Mounting base; connected to
drain
1
2
3
4
LFPAK33 (SOT1210)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
BUK9M43-100E
LFPAK33
Plastic single ended surface mounted package (LFPAK33); 8
leads
SOT1210
7. Marking
Table 4. Marking codes
Type number
Marking code
BUK9M43-100E
94310E
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
Unit
drain-source voltage
drain-gate voltage
gate-source voltage
25 °C ≤ Tj ≤ 175 °C
RGS = 20 kΩ
-
100
100
10
V
VDGR
VGS
-
V
DC; Tj ≤ 175 °C
-10
V
Pulsed; Tj ≤ 175 °C
[1] [2] -15
15
V
Ptot
ID
total power dissipation
drain current
Tmb = 25 °C; Fig. 1
-
75
W
A
VGS = 5 V; Tmb = 25 °C; Fig. 2
VGS = 5 V; Tmb = 100 °C; Fig. 2
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
-
25
-
17.6
99
A
IDM
Tstg
Tj
peak drain current
storage temperature
junction temperature
-
A
-55
-55
175
175
°C
°C
©
BUK9M43-100E
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
2 October 2017
2 / 13
Nexperia
BUK9M43-100E
N-channel 100 V, 43 mΩ logic level MOSFET in LFPAK33
Symbol
Parameter
Conditions
Min
Max
Unit
Source-drain diode
IS
source current
peak source current
Tmb = 25 °C
-
-
25
99
A
A
ISM
pulsed; tp ≤ 10 µs; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S non-repetitive drain-
ID = 25 A; Vsup ≤ 100 V; RGS = 50 Ω;
VGS = 5 V; Tj(init) = 25 °C; unclamped;
Fig. 4
[3] [4]
-
44
mJ
source avalanche
energy
[1] Accumulated pulse duration up to 50 hours delivers zero defect ppm.
[2] Significantly longer life times are achieved by lowering Tj and or VGS
[3] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[4] Refer to application note AN10273 for further information.
03aa16
aaa-021070
120
30
25
20
15
10
5
I
D
(A)
P
der
(%)
80
40
0
0
0
50
100
150
200
0
25
50
75 100 125 150 175 200
(°C)
T
T
(°C)
mb
mb
VGS ≥ 5 V
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
Fig. 2. Continuous drain current as a function of
mounting base temperature
©
BUK9M43-100E
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
2 October 2017
3 / 13
Nexperia
BUK9M43-100E
N-channel 100 V, 43 mΩ logic level MOSFET in LFPAK33
aaa-021072
3
10
I
D
(A)
2
10
Limit R
= V / I
DS D
DSon
t
= 10 us
p
10
100 us
1
DC
1 ms
-1
10
10 ms
100 ms
-2
10
2
3
1
10
10
10
V
(V)
DS
Tmb = 25 °C; IDM is a single pulse
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
aaa-021071
2
10
I
AL
(A)
10
(1)
(2)
(3)
1
-1
10
-2
10
-3
-2
-1
10
10
10
1
AL
10
t
(ms)
(1) Tj (init) = 25 °C; (2) Tj (init) = 150 °C; (3) Repetitive Avalanche
Fig. 4. Avalanche rating; avalanche current as a function of avalanche time
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 5
-
1.82
2
K/W
©
BUK9M43-100E
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
2 October 2017
4 / 13
Nexperia
BUK9M43-100E
N-channel 100 V, 43 mΩ logic level MOSFET in LFPAK33
aaa-021073
10
Z
th(j-mb)
(K/W)
δ = 0.5
1
0.2
0.1
t
p
0.05
-1
P
10
δ =
T
0.02
single shot
-5
t
t
p
T
-2
10
-6
-4
-3
-2
-1
10
10
10
10
10
10
1
t
(s)
p
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7. Characteristics
Symbol
Static characteristics
V(BR)DSS drain-source
breakdown voltage
Parameter
Conditions
Min
Typ
Max
Unit
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
100
90
-
-
V
V
V
-
-
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
1.4
1.7
2.1
voltage
Fig. 9; Fig. 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 10
-
-
-
2.45
-
V
V
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 10
0.5
IDSS
drain leakage current
gate leakage current
VDS = 100 V; VGS = 0 V; Tj = 25 °C
VDS = 100 V; VGS = 0 V; Tj = 175 °C
VGS = 10 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
VGS = 5 V; ID = 5 A; Tj = 25 °C; Fig. 11
VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 11
VGS = 5 V; ID = 5 A; Tj = 175 °C; Fig. 12
-
-
-
-
-
-
-
0.01
-
1
µA
500
100
100
43
µA
IGSS
2
nA
2
nA
RDSon
drain-source on-state
resistance
35
34
-
mΩ
mΩ
mΩ
43
121
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
ID = 5 A; VDS = 80 V; VGS = 5 V;
Tj = 25 °C; Fig. 13; Fig. 14
-
-
-
-
-
20.2
3.8
-
-
-
nC
nC
nC
gate-source charge
gate-drain charge
input capacitance
output capacitance
8.2
VDS = 25 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 15
1736 2309 pF
Coss
111
133
pF
©
BUK9M43-100E
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
2 October 2017
5 / 13
Nexperia
BUK9M43-100E
N-channel 100 V, 43 mΩ logic level MOSFET in LFPAK33
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Crss
reverse transfer
capacitance
-
70
95
pF
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 80 V; RL = 15 Ω; VGS = 5 V;
RG(ext) = 5 Ω; Tj = 25 °C
-
-
-
-
9.8
-
-
-
-
ns
ns
ns
ns
16.7
32.1
17.8
turn-off delay time
fall time
Source-drain diode
VSD
trr
source-drain voltage
IS = 5 A; VGS = 0 V; Tj = 25 °C; Fig. 16
-
-
-
0.78
28.1
38.1
1.2
V
reverse recovery time IS = 5 A; dIS/dt = -100 A/µs; VGS = 0 V;
-
-
ns
nC
VDS = 25 V; Tj = 25 °C
Qr
recovered charge
aaa-021074
aaa-021075
30
25
20
15
10
5
100
10 V
V
= 3 V
GS
I
R
D
DSon
(mΩ)
(A)
3.5 V
2.8 V
80
60
40
20
0
2.6 V
2.4 V
2.2 V
0
0
1
2
3
V
4
0
2
4
6
8
10
12
14
(V)
16
(V)
V
GS
DS
Tj = 25 °C
Tj = 25 °C; ID = 5 A
Fig. 6. Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig. 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
©
BUK9M43-100E
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
2 October 2017
6 / 13
Nexperia
BUK9M43-100E
N-channel 100 V, 43 mΩ logic level MOSFET in LFPAK33
aaa-021076
003aah026
10-1
60
I
D
ID
(A)
(A)
50
40
30
20
10
0
10-2
min
typ
max
10-3
10-4
10-5
10-6
175°C
2
T = 25°C
j
0
1
2
3
0
1
3
4
VGS (V)
V
(V)
GS
VDS = 12 V
Tj = 25 °C; VDS = 5 V
Fig. 8. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
Fig. 9. Sub-threshold drain current as a function of
gate-source voltage
aaa-021077
003aah025
200
3
VGS(th)
(V)
R
(mΩ)
DSon
2.4 V
2.6 V
2.8 V
2.5
160
max
2
120
80
40
0
typ
1.5
min
1
3 V
0.5
0
V
6
= 10 V
3.5 V
GS
-60
0
60
120
180
0
12
18
24
I (A)
D
30
T ( C)
°
j
Tj = 25 °C
ID = 1mA; VDS = VGS
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values
Fig. 10. Gate-source threshold voltage as a function of
junction temperature
©
BUK9M43-100E
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
2 October 2017
7 / 13
Nexperia
BUK9M43-100E
N-channel 100 V, 43 mΩ logic level MOSFET in LFPAK33
003aaj820
aaa-021078
10
3
V
(V)
GS
a
8
6
4
2
0
2.4
1.8
1.2
0.6
V
= 14 V
DS
80 V
0
-60
0
60
120
180
0
5
10
15
20
25
30
G
35
(nC)
40
Tj °C)
(
Q
Tj = 25 °C; ID = 5 A
Fig. 13. Gate-source voltage as a function of gate
charge; typical values
Fig. 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
aaa-021079
4
10
V
C
DS
(pF)
I
D
C
iss
3
2
10
10
V
V
GS(pl)
GS(th)
V
GS
Q
C
C
GS2
oss
rss
Q
GS1
Q
GS
Q
GD
G(tot)
Q
003aaa508
10
10
Fig. 14. Gate charge waveform definitions
-1
2
1
10
10
V
(V)
DS
VGS = 0 V; f = 1 MHz
Fig. 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
©
BUK9M43-100E
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
2 October 2017
8 / 13
Nexperia
BUK9M43-100E
N-channel 100 V, 43 mΩ logic level MOSFET in LFPAK33
aaa-021080
20
15
10
5
I
S
(A)
175°C
0.4
T = 25°C
j
0
0
0.2
0.6
0.8
1
(V)
1.2
V
SD
VGS = 0 V
Fig. 16. Source-drain (diode forward) current as a function of source-drain (diode forward) voltage; typical values
11. Application information
For guidance on how to use and understand this datasheet, please refer to application note
AN11158 "Understanding power MOSFET datasheet parameters".
©
BUK9M43-100E
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
2 October 2017
9 / 13
Nexperia
BUK9M43-100E
N-channel 100 V, 43 mΩ logic level MOSFET in LFPAK33
12. Package outline
Plastic single ended surface mounted package (LFPAK33); 8 leads
SOT1210
E
A
e
1
A
c
1
b
1
L
1
D
2
mounting
base
D
1
(D)
H
E
1
L
1
4
X
b
w
A
e
c
A
C
1
Lp
y
C
detail X
0
1
2.5
5 mm
scale
Dimensions
(1)
(1)
(1)
(1)
E
Unit
A
A
b
b
1
c
c
D ref
2.60
D
D
E
e
e
H
L
L
L
p
w
y
1
1
2
1
1
1
max 0.90 0.10 0.35 2.4 0.20 0.30
nom
2.35
1.90
3.40 2.45
3.20 2.00
3.40 0.65 0.25 0.50
3.20 0.45 0.13 0.30
mm
0.50
0.65 0.65
0.20 0.10
0.80 0.00 0.25 2.2 0.10 0.20
min
Note
1. Plastic or metal protrusions of 0.15 mm per side are not included.
sot1210_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
14-04-25
16-08-09
SOT1210
Fig. 17. Package outline LFPAK33 (SOT1210)
©
BUK9M43-100E
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
2 October 2017
10 / 13
Nexperia
BUK9M43-100E
N-channel 100 V, 43 mΩ logic level MOSFET in LFPAK33
13. Soldering
Footprint information for reflow soldering of LFPAK33 package
SOT1210
2.35
2.25
0.635 0.617
0.05 (all around)
1.05
0.62
0.75
1.91
0.51
2.47
3.9
0.51
0.6
0.83
0.4 (x8)
0.3 (x8)
0.65 (x6)
0.25 (x6)
solder paste
aperture
solder land
Notes : 1. Dimensions in mm
occupied area
solder resist
sot1210_fr
Fig. 18. Reflow soldering footprint for LFPAK33 (SOT1210)
©
BUK9M43-100E
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
2 October 2017
11 / 13
Nexperia
BUK9M43-100E
N-channel 100 V, 43 mΩ logic level MOSFET in LFPAK33
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Nexperia.
14. Legal information
Right to make changes — Nexperia reserves the right to make changes
to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Data sheet status
Suitability for use in automotive applications — This Nexperia product
has been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted to
be suitable for use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Document
status [1][2] status [3]
Product
Definition
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Nexperia product is suitable
and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to the accuracy
or completeness of information included herein and shall have no liability for
the consequences of use of such information.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Nexperia products in order to
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use by customer’s third party customer(s). Nexperia does not accept any
liability in this respect.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
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data sheet shall define the specification of the product as agreed between
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agreed otherwise in writing. In no event however, shall an agreement be
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beyond those described in the Product data sheet.
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Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’ aggregate and cumulative liability towards customer
©
BUK9M43-100E
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
2 October 2017
12 / 13
Nexperia
BUK9M43-100E
N-channel 100 V, 43 mΩ logic level MOSFET in LFPAK33
15. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 2
9. Thermal characteristics............................................... 4
10. Characteristics............................................................5
11. Application information............................................. 9
12. Package outline........................................................ 10
13. Soldering................................................................... 11
14. Legal information..................................................... 12
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Date of release: 2 October 2017
©
BUK9M43-100E
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
2 October 2017
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