BUK9Y11-80E [NEXPERIA]
N-channel 80 V, 11 mΩ logic level MOSFET in LFPAK56Production;型号: | BUK9Y11-80E |
厂家: | Nexperia |
描述: | N-channel 80 V, 11 mΩ logic level MOSFET in LFPAK56Production |
文件: | 总13页 (文件大小:740K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BUK9Y11-80E
N-channel 80 V, 11 mΩ logic level MOSFET in LFPAK56
8 May 2013
Product data sheet
1. General description
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS
technology. This product has been designed and qualified to AEC Q101 standard for use
in high performance automotive applications.
2. Features and benefits
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
•
•
•
•
3. Applications
12 V, 24 V and 48 V Automotive systems
Motors, lamps and solenoid control
Transmission control
•
•
•
•
Ultra high performance power switching
4. Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
80
Unit
V
VDS
ID
drain-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
VGS = 5 V; Tmb = 25 °C; Fig. 1
-
-
-
-
-
-
84
A
Ptot
total power dissipation Tmb = 25 °C; Fig. 2
194
W
Static characteristics
RDSon drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11
-
-
8.1
11
-
mΩ
nC
VGS = 5 V; ID = 25 A; VDS = 64 V;
Tj = 25 °C; Fig. 13; Fig. 14
13.2
Nexperia
BUK9Y11-80E
N-channel 80 V, 11 mΩ logic level MOSFET in LFPAK56
5. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
mb
D
S
1
S
S
S
G
D
source
source
source
gate
2
G
3
mbb076
4
1
2 3 4
mb
mounting base; connected to
drain
LFPAK56; Power-
SO8 (SOT669)
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BUK9Y11-80E
LFPAK56;
Plastic single-ended surface-mounted package (LFPAK56;
Power-SO8); 4 leads
SOT669
Power-SO8
7. Marking
Table 4.
Marking codes
Type number
Marking code
BUK9Y11-80E
91180E
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
80
Unit
drain-source voltage
drain-gate voltage
gate-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
RGS = 20 kΩ
-
V
V
V
V
A
A
A
W
VDGR
VGS
-
80
Tj ≤ 175 °C; DC
-10
10
Tj ≤ 175 °C; Pulsed
[1][2]
-15
15
ID
drain current
Tmb = 25 °C; VGS = 5 V; Fig. 1
Tmb = 100 °C; VGS = 5 V; Fig. 1
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4
Tmb = 25 °C; Fig. 2
-
-
-
-
84
59.3
336
194
IDM
Ptot
peak drain current
total power dissipation
©
BUK9Y11-80E
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
8 May 2013
2 / 13
Nexperia
BUK9Y11-80E
N-channel 80 V, 11 mΩ logic level MOSFET in LFPAK56
Symbol
Tstg
Parameter
Conditions
Min
-55
-55
Max
175
175
Unit
°C
storage temperature
junction temperature
Tj
°C
Source-drain diode
IS
source current
peak source current
Tmb = 25 °C
-
-
84
A
A
ISM
pulsed; tp ≤ 10 µs; Tmb = 25 °C
336
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
ID = 84 A; Vsup ≤ 80 V; RGS = 50 Ω;
VGS = 5 V; Tj(init) = 25 °C; unclamped;
Fig. 3
[3][4]
-
112.8 mJ
[1] Accumulated pulse duration up to 50 hours delivers zero defect ppm
[2] Significantly longer life times are achieved by lowering Tj and or VGS
[3] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[4] Refer to application note AN10273 for further information.
003aaj290
03aa16
100
80
60
40
20
0
120
I
D
(A)
P
der
(%)
80
40
0
0
30
60
90
120
150
T (°C)
j
180
0
50
100
150
200
(°C)
T
mb
Fig. 1. Continuous drain current as a function of
mounting base temperature
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
©
BUK9Y11-80E
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
8 May 2013
3 / 13
Nexperia
BUK9Y11-80E
N-channel 80 V, 11 mΩ logic level MOSFET in LFPAK56
003aaj291
2
10
I
AL
(A)
(1)
10
(2)
(3)
1
-1
10
-3
-2
-1
10
10
10
1
AL
10
t
(ms)
Fig. 3. Avalanche rating; avalanche current as a function of avalanche time
003aaj292
3
10
I
D
(A)
Limit R
= V / I
DS
DSon
D
2
10
t
= 10 us
p
100 us
DC
10
1 ms
1
10 ms
100 ms
-1
10
2
3
1
10
10
10
V
(V)
DS
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
K/W
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 5
-
-
0.77
©
BUK9Y11-80E
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
8 May 2013
4 / 13
Nexperia
BUK9Y11-80E
N-channel 80 V, 11 mΩ logic level MOSFET in LFPAK56
003aaj068
1
Z
th(j-mb)
(K/W)
δ = 0.5
0.2
-1
-2
-3
10
0.1
0.05
0.02
single shot
t
p
P
10
10
δ =
T
t
t
p
T
-6
-5
-4
-3
-2
-1
10
10
10
10
10
10
1
t
(s)
p
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
80
72
1.4
-
-
V
V
V
-
-
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
1.7
2.1
voltage
Fig. 9; Fig. 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 9
-
-
-
2.45
-
V
V
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 9
0.5
IDSS
IDSS
IGSS
drain leakage current
drain leakage current
gate leakage current
VDS = 80 V; VGS = 0 V; Tj = 25 °C
VDS = 80 V; VGS = 0 V; Tj = 175 °C
VGS = 10 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11
-
-
-
-
-
0.22
-
10
µA
µA
nA
nA
mΩ
500
100
100
11
2
2
RDSon
drain-source on-state
resistance
8.1
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 11
-
-
7.4
-
10
mΩ
mΩ
VGS = 5 V; ID = 25 A; Tj = 175 °C;
Fig. 12; Fig. 11
27.6
©
BUK9Y11-80E
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
8 May 2013
5 / 13
Nexperia
BUK9Y11-80E
N-channel 80 V, 11 mΩ logic level MOSFET in LFPAK56
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
ID = 25 A; VDS = 64 V; VGS = 5 V;
Tj = 25 °C; Fig. 13; Fig. 14
-
-
-
-
-
-
44.2
11.3
13.2
-
-
-
nC
nC
nC
gate-source charge
gate-drain charge
input capacitance
output capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; Fig. 15
4879 6506 pF
Coss
Crss
324
164
388
225
pF
pF
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 60 V; RL = 2.4 Ω; VGS = 5 V;
RG(ext) = 5 Ω; Tj = 25 °C
-
-
-
-
23
40
62
36
-
-
-
-
ns
ns
ns
ns
turn-off delay time
fall time
Source-drain diode
VSD source-drain voltage
trr
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 16
-
-
-
0.81
28
1.2
V
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
-
-
ns
nC
VDS = 25 V; Tj = 25 °C
recovered charge
Qr
32
003aaj294
003aaj295
75
20
4.5
10
3
I
D
R
DSon
2.8
(A)
(mΩ)
60
15
45
30
15
0
10
5
2.6
2.4
V
(V) = 2.2
GS
0
0
1
2
3
4
0
2
4
6
8
10
(V)
V
(V)
DS
V
GS
Tj = 25 °C; tp = 300 μs
Fig. 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig. 6. Output characteristics; drain current as a
function of drain-source voltage; typical values
©
BUK9Y11-80E
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Nexperia B.V. 2017. All rights reserved
Product data sheet
8 May 2013
6 / 13
Nexperia
BUK9Y11-80E
N-channel 80 V, 11 mΩ logic level MOSFET in LFPAK56
003aaj297
003aah025
160
3
VGS(th)
(V)
ID
(A)
2.5
max
120
80
2
typ
1.5
min
1
40
0.5
Tj = 175 °C
Tj = 25 °C
0
-60
0
0
0
60
120
180
1
2
3
4
VGS (V)
T ( C)
°
j
Fig. 8. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
Fig. 9. Gate-source threshold voltage as a function of
junction temperature
003aah026
003aaj300
10-1
20
2.6
2.8
ID
R
DSon
(A)
(mΩ)
3
10-2
15
min
typ
max
10-3
10-4
10-5
10-6
4.5
10
5
V
(V) = 10
GS
0
0
1
2
3
0
20
40
60
80
100
I (A)
VGS (V)
D
Tj = 25 °C; tp = 300 μs
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values
©
BUK9Y11-80E
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
8 May 2013
7 / 13
Nexperia
BUK9Y11-80E
N-channel 80 V, 11 mΩ logic level MOSFET in LFPAK56
003aaj302
003aaj818
3
10
V
GS
a
(V)
8
2.4
6
1.8
1.2
0.6
V
= 14V
V
= 64V
DS
DS
4
2
0
0
0
20
40
60
80
Q
100
(nC)
-60
0
60
120
180
Tj °C)
(
G
Fig. 13. Gate-source voltage as a function of gate
charge; typical values
Fig. 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
003aaj303
104
V
DS
C
iss
I
C
D
(pF)
V
GS(pl)
103
V
GS(th)
GS
V
Q
GS1
Q
GS2
C
oss
Q
GS
Q
GD
Q
G(tot)
C
rss
003aaa508
102
10-1
1
10
102
Fig. 14. Gate charge waveform definitions
V
(V)
DS
Fig. 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
©
BUK9Y11-80E
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
8 May 2013
8 / 13
Nexperia
BUK9Y11-80E
N-channel 80 V, 11 mΩ logic level MOSFET in LFPAK56
003aaj304
400
I
S
(A)
300
200
100
0
°
°
C
T = 175 C
T = 25
j
j
0
0.3
0.6
0.9
1.2
V
(V)
SD
Fig. 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
©
BUK9Y11-80E
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
8 May 2013
9 / 13
Nexperia
BUK9Y11-80E
N-channel 80 V, 11 mΩ logic level MOSFET in LFPAK56
11. Package outline
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads
SOT669
A
2
E
A
C
c
E
b
2
1
2
b
3
L
1
mounting
base
b
4
D
1
D
H
L
2
1
2
3
4
X
e
w
A
c
b
1/2 e
A
(A )
3
C
A
1
q
L
detail X
y
C
θ
8
0
0
5 mm
°
°
scale
Dimensions (mm are the original dimensions)
(1)
(1)
(1)
(1)
(1)
Unit
A
A
A
A
b
b
b
b
4
c
c
2
D
D
1
E
E
e
H
L
L
L
2
w
y
1
2
3
2
3
1
1
max 1.20 0.15 1.10
nom
min 1.01 0.00 0.95
0.50 4.41 2.2 0.9 0.25 0.30 4.10 4.20 5.0 3.3
6.2 0.85 1.3 1.3
5.8 0.40 0.8 0.8
0.1
0.25
1.27
0.25
mm
0.35 3.62 2.0 0.7 0.19 0.24 3.80
4.8 3.1
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
sot669_po
References
Outline
version
European
projection
Issue date
11-03-25
IEC
JEDEC
JEITA
SOT669
MO-235
13-02-27
Fig. 17. Package outline LFPAK56; Power-SO8 (SOT669)
©
BUK9Y11-80E
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
8 May 2013
10 / 13
Nexperia
BUK9Y11-80E
N-channel 80 V, 11 mΩ logic level MOSFET in LFPAK56
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
12. Legal information
12.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Right to make changes — Nexperia reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Suitability for use in automotive applications — This Nexperia
product has been qualified for use in automotive
Product
[short] data
sheet
Production
This document contains the product
specification.
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia and its suppliers accept no liability for
inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
12.2 Definitions
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Customers are responsible for the design and operation of their
applications and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the Nexperia product is suitable and fit for the
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local Nexperia
sales office. In case of any inconsistency or conflict with the
Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications
short data sheet, the full data sheet shall prevail.
and the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
12.3 Disclaimers
Terms and conditions of commercial sale — Nexperia
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no
responsibility for the content in this document if provided by an information
source outside of Nexperia.
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
©
BUK9Y11-80E
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
8 May 2013
11 / 13
Nexperia
BUK9Y11-80E
N-channel 80 V, 11 mΩ logic level MOSFET in LFPAK56
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
BUK9Y11-80E
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
8 May 2013
12 / 13
Nexperia
BUK9Y11-80E
N-channel 80 V, 11 mΩ logic level MOSFET in LFPAK56
13. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
Applications ........................................................... 1
Quick reference data ............................................. 1
Pinning information ...............................................2
Ordering information .............................................2
Marking ...................................................................2
Limiting values .......................................................2
Thermal characteristics .........................................4
Characteristics .......................................................5
Package outline ................................................... 10
3
4
5
6
7
8
9
10
11
12
Legal information .................................................11
Data sheet status ............................................... 11
Definitions ...........................................................11
Disclaimers .........................................................11
Trademarks ........................................................ 12
12.1
12.2
12.3
12.4
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 08 May 2013
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BUK9Y11-80E
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Product data sheet
8 May 2013
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相关型号:
BUK9Y13-60EL
Single N-channel 60 V, 7.9 mOhm logic level MOSFET in LFPAK56 using Enhanced SOA technologyProduction
NEXPERIA
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