BUK9Y15-60E [NEXPERIA]

N-channel 60 V, 15 mΩ logic level MOSFET in LFPAK56Production;
BUK9Y15-60E
型号: BUK9Y15-60E
厂家: Nexperia    Nexperia
描述:

N-channel 60 V, 15 mΩ logic level MOSFET in LFPAK56Production

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BUK9Y15-60E  
N-channel 60 V, 15 mΩ logic level MOSFET in LFPAK56  
16 March 2016  
Product data sheet  
1. General description  
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS  
technology. This product has been designed and qualified to AEC Q101 standard for use  
in high performance automotive applications.  
2. Features and benefits  
Q101 compliant  
Repetitive avalanche rated  
Suitable for thermally demanding environments due to 175 °C rating  
True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C  
3. Applications  
12 V Automotive systems  
Motors, lamps and solenoid control  
Transmission control  
Ultra high performance power switching  
4. Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
60  
Unit  
V
VDS  
ID  
drain-source voltage  
drain current  
25 °C ≤ Tj ≤ 175 °C  
VGS = 5 V; Tmb = 25 °C; Fig. 2  
-
-
-
-
-
-
53  
A
Ptot  
total power dissipation Tmb = 25 °C; Fig. 1  
95  
W
Static characteristics  
RDSon drain-source on-state  
resistance  
Dynamic characteristics  
QGD gate-drain charge  
VGS = 5 V; ID = 15 A; Tj = 25 °C; Fig. 11  
-
-
12.1  
6
15  
-
mΩ  
nC  
ID = 15 A; VDS = 48 V; VGS = 5 V;  
Tj = 25 °C; Fig. 13; Fig. 14  
 
 
 
 
Nexperia  
BUK9Y15-60E  
N-channel 60 V, 15 mΩ logic level MOSFET in LFPAK56  
5. Pinning information  
Table 2.  
Pin  
Pinning information  
Symbol Description  
Simplified outline  
Graphic symbol  
mb  
D
S
1
S
S
S
G
D
source  
source  
source  
gate  
2
G
3
mbb076  
4
1
2 3 4  
mb  
mounting base; connected to  
drain  
LFPAK56; Power-  
SO8 (SOT669)  
6. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name  
Description  
Version  
BUK9Y15-60E  
LFPAK56;  
Plastic single-ended surface-mounted package  
(LFPAK56; Power-SO8); 4 leads  
SOT669  
Power-SO8  
7. Marking  
Table 4.  
Marking codes  
Type number  
Marking code  
BUK9Y15-60E  
91560E  
8. Limiting values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VDS  
Parameter  
Conditions  
Min  
Max  
Unit  
V
drain-source voltage  
drain-gate voltage  
gate-source voltage  
25 °C ≤ Tj ≤ 175 °C  
-
60  
VDGR  
VGS  
RGS = 20 kΩ  
-
60  
V
DC; Tj ≤ 175 °C  
-10  
10  
V
Pulsed; Tj ≤ 175 °C  
[1][2]  
-15  
15  
V
Ptot  
ID  
total power dissipation  
drain current  
Tmb = 25 °C; Fig. 1  
-
-
-
-
95  
W
A
VGS = 5 V; Tmb = 25 °C; Fig. 2  
VGS = 5 V; Tmb = 100 °C; Fig. 2  
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3  
53  
37.4  
212  
A
IDM  
peak drain current  
A
©
BUK9Y15-60E  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
16 March 2016  
2 / 13  
 
 
 
 
Nexperia  
BUK9Y15-60E  
N-channel 60 V, 15 mΩ logic level MOSFET in LFPAK56  
Symbol  
Tstg  
Parameter  
Conditions  
Min  
-55  
-55  
Max  
175  
175  
Unit  
°C  
storage temperature  
junction temperature  
Tj  
°C  
Source-drain diode  
IS  
source current  
peak source current  
Tmb = 25 °C  
-
-
53  
A
A
ISM  
pulsed; tp ≤ 10 µs; Tmb = 25 °C  
212  
Avalanche ruggedness  
EDS(AL)S non-repetitive drain-source  
avalanche energy  
ID = 53 A; Vsup ≤ 60 V; RGS = 50 Ω;  
VGS = 5 V; Tj(init) = 25 °C; unclamped;  
Fig. 4  
[3][4]  
-
42.7  
mJ  
[1] Accumulated pulse duration up to 50 hours delivers zero defect ppm  
[2] Significantly longer life times are achieved by lowering Tj and or VGS  
[3] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.  
[4] Refer to application note AN10273 for further information.  
03aa16  
003aai910  
120  
60  
I
D
(A)  
P
der  
(%)  
50  
40  
30  
20  
10  
0
80  
40  
0
0
30  
60  
90  
120  
150  
(°C)  
180  
0
50  
100  
150  
200  
T
T
(°C)  
mb  
mb  
Fig. 2. Continuous drain current as a function of  
mounting base temperature  
Fig. 1. Normalized total power dissipation as a  
function of mounting base temperature  
©
BUK9Y15-60E  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
16 March 2016  
3 / 13  
 
 
 
Nexperia  
BUK9Y15-60E  
N-channel 60 V, 15 mΩ logic level MOSFET in LFPAK56  
003aai912  
3
10  
I
D
(A)  
Limit R  
= V / I  
DS  
DSon  
D
2
10  
t
= 10 us  
p
100 us  
10  
DC  
1
1 ms  
10 ms  
100 ms  
-1  
10  
2
1
10  
10  
V
(V)  
DS  
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage  
003aai911  
2
10  
I
AL  
(A)  
10  
(1)  
(2)  
(3)  
1
-1  
10  
-3  
-2  
-1  
10  
10  
10  
1
AL  
10  
t
(ms)  
Fig. 4. Avalanche rating; avalanche current as a function of avalanche time  
9. Thermal characteristics  
Table 6.  
Symbol  
Thermal characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
K/W  
Rth(j-mb)  
thermal resistance  
from junction to  
mounting base  
Fig. 5  
-
-
1.58  
©
BUK9Y15-60E  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
16 March 2016  
4 / 13  
 
 
 
Nexperia  
BUK9Y15-60E  
N-channel 60 V, 15 mΩ logic level MOSFET in LFPAK56  
003aai733  
10  
Z
th(j-mb)  
(K/W)  
1
δ = 0.5  
0.2  
0.1  
t
p
-1  
P
10  
10  
δ =  
0.05  
T
0.02  
single shot  
t
t
p
T
-2  
-6  
-5  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
10  
10  
1
t
(s)  
p
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration  
10. Characteristics  
Table 7.  
Symbol  
Characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Static characteristics  
V(BR)DSS drain-source  
breakdown voltage  
ID = 250 µA; VGS = 0 V; Tj = 25 °C  
ID = 250 µA; VGS = 0 V; Tj = -55 °C  
60  
54  
1.4  
-
-
V
V
V
-
-
VGS(th)  
gate-source threshold ID = 1 mA; VDS=VGS; Tj = 25 °C; Fig. 9;  
1.7  
2.1  
voltage  
Fig. 10  
ID = 1 mA; VDS=VGS; Tj = -55 °C; Fig. 9  
ID = 1 mA; VDS=VGS; Tj = 175 °C; Fig. 9  
VDS = 60 V; VGS = 0 V; Tj = 25 °C  
VDS = 60 V; VGS = 0 V; Tj = 175 °C  
VGS = 10 V; VDS = 0 V; Tj = 25 °C  
VGS = -10 V; VDS = 0 V; Tj = 25 °C  
VGS = 5 V; ID = 15 A; Tj = 25 °C; Fig. 11  
-
-
2.45  
-
V
0.5  
-
V
IDSS  
drain leakage current  
gate leakage current  
-
-
-
-
-
-
0.05  
-
1
µA  
µA  
nA  
nA  
mΩ  
mΩ  
500  
100  
100  
15  
IGSS  
2
2
RDSon  
drain-source on-state  
resistance  
12.1  
10.8  
VGS = 10 V; ID = 15 A; Tj = 25 °C;  
Fig. 11  
13  
VGS = 5 V; ID = 15 A; Tj = 175 °C;  
Fig. 12; Fig. 11  
-
-
33.9  
mΩ  
Dynamic characteristics  
QG(tot) total gate charge  
QGS  
ID = 15 A; VDS = 48 V; VGS = 5 V;  
Tj = 25 °C; Fig. 13; Fig. 14  
-
-
-
17.2  
4.9  
6
-
-
-
nC  
nC  
nC  
gate-source charge  
gate-drain charge  
QGD  
©
BUK9Y15-60E  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
16 March 2016  
5 / 13  
 
 
Nexperia  
BUK9Y15-60E  
N-channel 60 V, 15 mΩ logic level MOSFET in LFPAK56  
Symbol  
Ciss  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
input capacitance  
output capacitance  
VDS = 25 V; VGS = 0 V; f = 1 MHz;  
Tj = 25 °C; Fig. 15  
-
-
-
1952 2603 pF  
Coss  
182  
100  
218  
137  
pF  
pF  
Crss  
reverse transfer  
capacitance  
td(on)  
tr  
td(off)  
tf  
turn-on delay time  
rise time  
VDS = 45 V; RL = 3 Ω; VGS = 5 V;  
RG(ext) = 5 Ω; Tj = 25 °C  
-
-
-
-
11.4  
17.3  
25.2  
15.3  
-
-
-
-
ns  
ns  
ns  
ns  
turn-off delay time  
fall time  
Source-drain diode  
VSD source-drain voltage  
trr  
IS = 15 A; VGS = 0 V; Tj = 25 °C; Fig. 16  
-
-
-
0.83  
20.7  
18.7  
1.2  
V
reverse recovery time IS = 10 A; dIS/dt = -100 A/µs; VGS = 0 V;  
-
-
ns  
nC  
VDS = 25 V; Tj = 25 °C  
recovered charge  
Qr  
003aai915  
003aai914  
30  
150  
125  
100  
75  
R
I
DSon  
D
(A)  
10 V  
4.5 V  
3.5 V  
25  
20  
15  
V
= 3 V  
2.8 V  
10  
5
50  
GS  
25  
2.6 V  
2.4 V  
0
0
0
2
4
6
8
GS  
10  
0
0.5  
1
1.5  
2
2.5  
(V)  
3
V
(V)  
V
DS  
Tj = 25 °C  
Fig. 7. Drain-source on-state resistance as a function  
of gate-source voltage; typical values  
Fig. 6. Output characteristics; drain current as a  
function of drain-source voltage; typical values  
©
BUK9Y15-60E  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
16 March 2016  
6 / 13  
Nexperia  
BUK9Y15-60E  
N-channel 60 V, 15 mΩ logic level MOSFET in LFPAK56  
003aai917  
003aah025  
80  
3
VGS(th)  
(V)  
I
D
(A)  
2.5  
max  
60  
40  
20  
0
2
typ  
1.5  
min  
1
0.5  
175°C  
T = 25°C  
j
0
-60  
0
60  
120  
180  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
(V)  
4
T ( C)  
V
GS  
°
j
Fig. 8. Transfer characteristics; drain current as a  
function of gate-source voltage; typical values  
Fig. 9. Gate-source threshold voltage as a function of  
junction temperature  
003aah026  
003aai920  
10-1  
50  
R
DSon  
2.6 V  
2.8 V  
3 V  
ID  
(A)  
10-2  
40  
min  
typ  
max  
10-3  
10-4  
10-5  
10-6  
30  
20  
10  
0
33..55VV  
44..55VV  
V
= 10 V  
GS  
0
1
2
3
0
10  
20  
30  
40  
50  
60  
I
70  
(A)  
80  
VGS (V)  
D
Tj = 25 °C; tp = 300 μs  
Fig. 10. Sub-threshold drain current as a function of  
gate-source voltage  
Fig. 11. Drain-source on-state resistance as a function  
of drain current; typical values  
©
BUK9Y15-60E  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
16 March 2016  
7 / 13  
 
 
 
Nexperia  
BUK9Y15-60E  
N-channel 60 V, 15 mΩ logic level MOSFET in LFPAK56  
003aaj816  
2.4  
V
DS  
a
I
D
1.6  
0.8  
V
V
GS(pl)  
GS(th)  
V
GS  
Q
GS2  
Q
GS1  
Q
GS  
Q
GD  
Q
G(tot)  
003aaa508  
0
-60  
Fig. 13. Gate charge waveform definitions  
0
60  
120  
180  
Tj °C)  
(
Fig. 12. Normalized drain-source on-state resistance  
factor as a function of junction temperature  
003aai922  
003aai923  
4
10  
10  
V
GS  
(V)  
C
(pF)  
8
6
4
2
0
C
iss  
3
10  
V
= 14 V  
GS  
48 V  
C
C
oss  
2
10  
rss  
10  
-1  
2
0
5
10  
15  
20  
25  
30  
G
35  
(nC)  
40  
10  
1
10  
10  
Q
V
(V)  
DS  
Fig. 14. Gate-source voltage as a function of gate  
charge; typical values  
Fig. 15. Input, output and reverse transfer capacitances  
as a function of drain-source voltage; typical  
values  
©
BUK9Y15-60E  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
16 March 2016  
8 / 13  
 
 
 
 
Nexperia  
BUK9Y15-60E  
N-channel 60 V, 15 mΩ logic level MOSFET in LFPAK56  
003aai924  
80  
60  
40  
20  
0
I
S
(A)  
17550°C  
T = 25°C  
j
0
0.2  
0.4  
0.6  
0.8  
1
(V)  
1.2  
V
SD  
Fig. 16. Source-drain (diode forward) current as a function of source-drain (diode forward) voltage; typical values  
©
BUK9Y15-60E  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
16 March 2016  
9 / 13  
 
Nexperia  
BUK9Y15-60E  
N-channel 60 V, 15 mΩ logic level MOSFET in LFPAK56  
11. Package outline  
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads  
SOT669  
A
2
E
A
C
c
E
b
2
1
2
b
3
L
1
mounting  
base  
b
4
D
1
D
H
L
2
1
2
3
4
X
e
w
A
c
b
1/2 e  
A
(A )  
3
C
A
1
q
L
detail X  
y
C
θ
8
0
0
5 mm  
°
°
scale  
Dimensions (mm are the original dimensions)  
(1)  
(1)  
(1)  
(1)  
(1)  
Unit  
A
A
A
A
b
b
b
b
4
c
c
2
D
D
1
E
E
e
H
L
L
L
2
w
y
1
2
3
2
3
1
1
max 1.20 0.15 1.10  
nom  
min 1.01 0.00 0.95  
0.50 4.41 2.2 0.9 0.25 0.30 4.10 4.20 5.0 3.3  
6.2 0.85 1.3 1.3  
5.8 0.40 0.8 0.8  
0.1  
0.25  
1.27  
0.25  
mm  
0.35 3.62 2.0 0.7 0.19 0.24 3.80  
4.8 3.1  
Note  
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.  
sot669_po  
References  
Outline  
version  
European  
projection  
Issue date  
11-03-25  
IEC  
JEDEC  
JEITA  
SOT669  
MO-235  
13-02-27  
Fig. 17. Package outline LFPAK56; Power-SO8 (SOT669)  
©
BUK9Y15-60E  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
16 March 2016  
10 / 13  
 
Nexperia  
BUK9Y15-60E  
N-channel 60 V, 15 mΩ logic level MOSFET in LFPAK56  
In no event shall Nexperia be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation -  
lost profits, lost savings, business interruption, costs related to the removal  
or replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
12. Legal information  
12.1 Data sheet status  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, Nexperia’s aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of Nexperia.  
Document  
Product  
Definition  
status [1][2] status [3]  
Objective  
[short] data  
sheet  
Development This document contains data from  
the objective specification for product  
development.  
Right to make changes — Nexperia reserves the right to  
make changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
Preliminary  
[short] data  
sheet  
Qualification This document contains data from the  
preliminary specification.  
Suitability for use in automotive applications — This Nexperia  
product has been qualified for use in automotive  
Product  
[short] data  
sheet  
Production  
This document contains the product  
specification.  
applications. Unless otherwise agreed in writing, the product is not designed,  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
malfunction of a Nexperia product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
damage. Nexperia and its suppliers accept no liability for  
inclusion and/or use of Nexperia products in such equipment or  
applications and therefore such inclusion and/or use is at the customer's own  
risk.  
[1] Please consult the most recently issued document before initiating or  
completing a design.  
[2] The term 'short data sheet' is explained in section "Definitions".  
[3] The product status of device(s) described in this document may have  
changed since this document was published and may differ in case of  
multiple devices. The latest product status information is available on  
the Internet at URL http://www.nexperia.com.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
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Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. Nexperia makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
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Nexperia does not give any representations or warranties as to  
the accuracy or completeness of information included herein and shall have  
no liability for the consequences of use of such information.  
Customers are responsible for the design and operation of their  
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accepts no liability for any assistance with applications or  
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information included herein and shall have no liability for the consequences  
of use of such information.  
customer’s applications and products planned, as well as for the planned  
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provide appropriate design and operating safeguards to minimize the risks  
associated with their applications and products.  
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with the same product type number(s) and title. A short data sheet is  
intended for quick reference only and should not be relied upon to contain  
detailed and full information. For detailed and full information see the  
relevant full data sheet, which is available on request via the local Nexperia  
sales office. In case of any inconsistency or conflict with the  
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damage, costs or problem which is based on any weakness or default  
in the customer’s applications or products, or the application or use by  
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short data sheet, the full data sheet shall prevail.  
and the products or of the application or use by customer’s third party  
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Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those  
given in the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
12.3 Disclaimers  
Terms and conditions of commercial sale — Nexperia  
Limited warranty and liability — Information in this document is believed  
to be accurate and reliable. However, Nexperia does not give  
any representations or warranties, expressed or implied, as to the accuracy  
or completeness of such information and shall have no liability for the  
consequences of use of such information. Nexperia takes no  
responsibility for the content in this document if provided by an information  
source outside of Nexperia.  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. Nexperia hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of Nexperia products by customer.  
©
BUK9Y15-60E  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
16 March 2016  
11 / 13  
 
 
 
 
 
Nexperia  
BUK9Y15-60E  
N-channel 60 V, 15 mΩ logic level MOSFET in LFPAK56  
No offer to sell or license — Nothing in this document may be interpreted  
or construed as an offer to sell products that is open for acceptance or the  
grant, conveyance or implication of any license under any copyrights, patents  
or other industrial or intellectual property rights.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
Translations — A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
12.4 Trademarks  
Notice: All referenced brands, product names, service names and  
trademarks are the property of their respective owners.  
©
BUK9Y15-60E  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
16 March 2016  
12 / 13  
 
Nexperia  
BUK9Y15-60E  
N-channel 60 V, 15 mΩ logic level MOSFET in LFPAK56  
13. Contents  
1
General description ............................................... 1  
2
Features and benefits ............................................1  
Applications ........................................................... 1  
Quick reference data ............................................. 1  
Pinning information ...............................................2  
Ordering information .............................................2  
Marking ...................................................................2  
Limiting values .......................................................2  
Thermal characteristics .........................................4  
Characteristics .......................................................5  
Package outline ................................................... 10  
3
4
5
6
7
8
9
10  
11  
12  
Legal information .................................................11  
Data sheet status ............................................... 11  
Definitions ...........................................................11  
Disclaimers .........................................................11  
Trademarks ........................................................ 12  
12.1  
12.2  
12.3  
12.4  
© Nexperia B.V. 2017. All rights reserved  
For more information, please visit: http://www.nexperia.com  
For sales office addresses, please send an email to: salesaddresses@nexperia.com  
Date of release: 16 March 2016  
©
BUK9Y15-60E  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
16 March 2016  
13 / 13  

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