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BUK9Y1R3-40H [NEXPERIA]

N-channel 40 V, 1.3 mΩ logic level MOSFET in LFPAK56Production;
BUK9Y1R3-40H
型号： BUK9Y1R3-40H
厂家： Nexperia    Nexperia
描述：

N-channel 40 V, 1.3 mΩ logic level MOSFET in LFPAK56Production
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BUK9Y1R3-40H  
N-channel 40 V, 1.3 mΩ logic level MOSFET in LFPAK56  
31 May 2018  
Product data sheet  
1. General description  
Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction  
technology, housed in a robust LFPAK56 package. This product has been fully designed and  
qualified to meet AEC-Q101 requirements delivering high performance and endurance.  
2. Features and benefits  
•
Fully automotive qualified to AEC-Q101:  
175 °C rating suitable for thermally demanding environments  
Trench 9 Superjunction technology:  
•
•
•
Reduced cell pitch enables enhanced power density and efficiency with lower RDSon in  
same footprint  
•
•
Improved SOA and avalanche capability compared to standard TrenchMOS  
Tight VGS(th) limits enable easy paralleling of MOSFETs  
•
LFPAK Gull Wing leads:  
•
High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike  
traditional QFN packages  
•
•
Visual (AOI) soldering inspection, no need for expensive x-ray equipment  
Easy solder wetting for good mechanical solder joint  
•
LFPAK copper clip technology:  
•
•
Improved reliability, with reduced Rth and RDSon  
Increases maximum current capability and improved current spreading  
3. Applications  
•
•
•
•
•
12 V automotive systems  
Motors, lamps and solenoid control  
Start-Stop micro-hybrid applications  
Transmission control  
Ultra high performance power switching  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
VDS  
Parameter  
Conditions  
Min  
Typ  
Max  
40  
Unit  
V
drain-source voltage  
drain current  
25 °C ≤ Tj ≤ 175 °C  
VGS = 10 V; Tmb = 25 °C; Fig. 2  
-
-
-
-
-
-
ID  
[1]  
190  
395  
A
Ptot  
total power dissipation Tmb = 25 °C; Fig. 1  
W
 
 
 
 
Nexperia  
BUK9Y1R3-40H  
N-channel 40 V, 1.3 mΩ logic level MOSFET in LFPAK56  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Static characteristics  
RDSon drain-source on-state  
resistance  
Dynamic characteristics  
VGS = 10 V; ID = 25 A; Tj = 25 °C;  
Fig. 11  
0.67  
0.96  
1.3  
mΩ  
QGD  
gate-drain charge  
ID = 25 A; VDS = 20 V; VGS = 4.5 V;  
Fig. 13; Fig. 14  
-
11.2  
22.4  
nC  
nC  
Source-drain diode  
Qr  
S
recovered charge  
softness factor  
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;  
VDS = 20 V; Tj = 25 °C; Fig. 17  
-
-
38.8  
0.8  
-
-
[1] 190A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,  
thermal design and operating temperature  
5. Pinning information  
Table 2. Pinning information  
Pin  
1
Symbol Description  
Simplified outline  
Graphic symbol  
S
S
S
G
D
source  
source  
source  
gate  
mb  
D
S
2
G
3
4
mbb076  
1
2 3 4  
mb  
mounting base; connected to  
drain  
LFPAK56; Power-  
SO8 (SOT669)  
6. Ordering information  
Table 3. Ordering information  
Type number  
Package  
Name  
Description  
Version  
BUK9Y1R3-40H  
LFPAK56;  
plastic, single-ended surface-mounted package; 4 terminals  
SOT669  
Power-SO8  
7. Marking  
Table 4. Marking codes  
Type number  
Marking code  
BUK9Y1R3-40H  
91H340  
8. Limiting values  
Table 5. Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
©
BUK9Y1R3-40H  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2018. All rights reserved  
Product data sheet  
31 May 2018  
2 / 12  
 
 
 
 
 
Nexperia  
BUK9Y1R3-40H  
N-channel 40 V, 1.3 mΩ logic level MOSFET in LFPAK56  
Symbol  
VDS  
VGS  
Ptot  
Parameter  
Conditions  
Min  
Max  
40  
Unit  
V
drain-source voltage  
gate-source voltage  
total power dissipation  
drain current  
25 °C ≤ Tj ≤ 175 °C  
-
DC; Tj ≤ 175 °C  
-10  
16  
V
Tmb = 25 °C; Fig. 1  
-
395  
190  
190  
600  
175  
175  
W
A
ID  
VGS = 10 V; Tmb = 25 °C; Fig. 2  
VGS = 10 V; Tmb = 100 °C; Fig. 2  
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3  
[1]  
[1]  
-
-
A
IDM  
Tstg  
Tj  
peak drain current  
storage temperature  
junction temperature  
-
A
-55  
-55  
°C  
°C  
Source-drain diode  
IS  
source current  
peak source current  
Tmb = 25 °C  
[2]  
-
-
145  
600  
A
A
ISM  
pulsed; tp ≤ 10 µs; Tmb = 25 °C  
Avalanche ruggedness  
EDS(AL)S non-repetitive drain-  
ID = 190 A; Vsup ≤ 40 V; RGS = 50 Ω;  
VGS = 10 V; Tj(init) = 25 °C; unclamped;  
Fig. 4  
[3] [4]  
-
154  
mJ  
source avalanche  
energy  
[1] 190A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,  
thermal design and operating temperature  
[2] 145A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,  
thermal design and operating temperature  
[3] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.  
[4] Refer to application note AN10273 for further information.  
03aa16  
aaa-025649  
120  
400  
300  
200  
100  
0
I
D
(A)  
P
der  
(%)  
80  
(1)  
40  
0
0
50  
100  
150  
200  
0
25  
50  
75 100 125 150 175 200  
T
mb  
(°C)  
T
(°C)  
mb  
VGS ≥ 10 V  
(1) 190A continuous current has been successfully  
demonstrated during application tests. Practically  
the current will be limited by PCB, thermal design  
and operating temperature.  
Fig. 1. Normalized total power dissipation as a  
function of mounting base temperature  
Fig. 2. Continuous drain current as a function of  
mounting base temperature  
©
BUK9Y1R3-40H  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2018. All rights reserved  
Product data sheet  
31 May 2018  
3 / 12  
 
 
 
Nexperia  
BUK9Y1R3-40H  
N-channel 40 V, 1.3 mΩ logic level MOSFET in LFPAK56  
aaa-027653  
3
10  
I
t
p
= 10 µs  
D
Limit R  
= V / I  
DS D  
DSon  
(A)  
100 µs  
2
10  
DC  
10  
1
1 ms  
10 ms  
100 ms  
-1  
10  
-1  
2
10  
1
10  
10  
V
DS  
(V)  
Tmb = 25 °C; IDM is a single pulse  
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage  
aaa-026107  
3
10  
I
AL  
(A)  
2
10  
(1)  
(2)  
(3)  
10  
1
-1  
10  
-3  
-2  
-1  
10  
10  
10  
1
AL  
10  
t
(ms)  
(1) Tj (init) = 25 °C; (2) Tj (init) = 150 °C; (3) Repetitive Avalanche  
Fig. 4. Avalanche rating; avalanche current as a function of avalanche time  
9. Thermal characteristics  
Table 6. Thermal characteristics  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
0.38  
Unit  
Rth(j-mb)  
thermal resistance  
from junction to  
mounting base  
Fig. 5  
-
0.29  
K/W  
©
BUK9Y1R3-40H  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2018. All rights reserved  
Product data sheet  
31 May 2018  
4 / 12  
 
 
 
Nexperia  
BUK9Y1R3-40H  
N-channel 40 V, 1.3 mΩ logic level MOSFET in LFPAK56  
aaa-027654  
1
Z
th(j-mb)  
(K/W)  
δ = 0.5  
-1  
-2  
-3  
10  
0.2  
0.1  
0.05  
t
p
P
10  
10  
δ =  
0.02  
T
single shot  
t
t
p
T
-6  
-5  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
10  
10  
1
t
p
(s)  
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration  
10. Characteristics  
Table 7. Characteristics  
Symbol  
Static characteristics  
V(BR)DSS drain-source  
breakdown voltage  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
ID = 250 µA; VGS = 0 V; Tj = 25 °C  
ID = 250 µA; VGS = 0 V; Tj = -40 °C  
ID = 250 µA; VGS = 0 V; Tj = -55 °C  
40  
-
43  
-
V
V
V
V
40.5  
40  
-
36  
1.35  
-
VGS(th)  
gate-source threshold ID = 1 mA; VDS=VGS; Tj = 25 °C; Fig. 9;  
1.62  
2.05  
voltage  
Fig. 10  
ID = 1 mA; VDS=VGS; Tj = 175 °C;  
Fig. 10  
0.6  
-
-
-
-
V
V
ID = 1 mA; VDS=VGS; Tj = -55 °C;  
Fig. 10  
2.5  
IDSS  
drain leakage current  
gate leakage current  
VDS = 40 V; VGS = 0 V; Tj = 25 °C  
VDS = 16 V; VGS = 0 V; Tj = 125 °C  
VDS = 40 V; VGS = 0 V; Tj = 175 °C  
VGS = 16 V; VDS = 0 V; Tj = 25 °C  
VGS = -10 V; VDS = 0 V; Tj = 25 °C  
-
-
-
-
-
0.4  
2.4  
0.34  
2
1
µA  
µA  
mA  
nA  
nA  
10  
1
IGSS  
100  
100  
2
©
BUK9Y1R3-40H  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2018. All rights reserved  
Product data sheet  
31 May 2018  
5 / 12  
 
 
Nexperia  
BUK9Y1R3-40H  
N-channel 40 V, 1.3 mΩ logic level MOSFET in LFPAK56  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
RDSon  
drain-source on-state  
resistance  
VGS = 10 V; ID = 25 A; Tj = 25 °C;  
Fig. 11  
0.67  
0.96  
1.3  
mΩ  
VGS = 10 V; ID = 25 A; Tj = 105 °C;  
Fig. 12  
1
1.47  
1.6  
2.1  
2.3  
2.8  
1.8  
2.8  
3.1  
3.9  
3.65  
mΩ  
mΩ  
mΩ  
mΩ  
mΩ  
mΩ  
mΩ  
mΩ  
VGS = 10 V; ID = 25 A; Tj = 125 °C;  
Fig. 12  
1.1  
VGS = 10 V; ID = 25 A; Tj = 175 °C;  
Fig. 12  
1.4  
2.04  
1.21  
1.82  
1.97  
2.5  
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;  
Fig. 11  
0.85  
1.26  
1.4  
VGS = 4.5 V; ID = 25 A; Tj = 105 °C;  
Fig. 12  
VGS = 4.5 V; ID = 25 A; Tj = 125 °C;  
Fig. 12  
VGS = 4.5 V; ID = 25 A; Tj = 175 °C;  
Fig. 12  
1.76  
0.58  
RG  
gate resistance  
f = 1 MHz; Tj = 25 °C  
1.46  
Dynamic characteristics  
QG(tot)  
total gate charge  
ID = 25 A; VDS = 20 V; VGS = 10 V;  
Fig. 13; Fig. 14  
-
99  
139  
nC  
ID = 25 A; VDS = 20 V; VGS = 4.5 V;  
Fig. 13; Fig. 14  
-
-
-
-
-
-
45.3  
16.1  
11.2  
63.4  
24.2  
22.4  
nC  
nC  
nC  
QGS  
QGD  
Ciss  
Coss  
Crss  
gate-source charge  
gate-drain charge  
input capacitance  
output capacitance  
VDS = 25 V; VGS = 0 V; f = 1 MHz;  
Tj = 25 °C; Fig. 15  
6978 9769 pF  
1244 1742 pF  
reverse transfer  
capacitance  
269  
592  
pF  
td(on)  
tr  
td(off)  
tf  
turn-on delay time  
rise time  
VDS = 20 V; RL = 0.8 Ω; VGS = 4.5 V;  
RG(ext) = 5 Ω  
-
-
-
-
36.3  
42.5  
51.8  
30.7  
-
-
-
-
ns  
ns  
ns  
ns  
turn-off delay time  
fall time  
Source-drain diode  
VSD  
trr  
source-drain voltage  
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 16  
-
-
-
-
-
0.8  
1.2  
V
reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;  
38.7  
38.8  
0.8  
-
-
-
-
ns  
nC  
VDS = 20 V; Tj = 25 °C; Fig. 17  
Qr  
S
recovered charge  
softness factor  
IS = 25 A; dIS/dt = -500 A/µs; VGS = 0 V;  
VDS = 20 V; Tj = 25 °C; Fig. 17  
0.72  
©
BUK9Y1R3-40H  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2018. All rights reserved  
Product data sheet  
31 May 2018  
6 / 12  
Nexperia  
BUK9Y1R3-40H  
N-channel 40 V, 1.3 mΩ logic level MOSFET in LFPAK56  
aaa-027655  
aaa-027656  
300  
5
I
R
DSon  
(mΩ)  
D
10 V  
(A)  
250  
200  
150  
100  
50  
4.5 V  
4
3
2
1
0
V
= 3 V  
2.8 V  
GS  
2.6 V  
2.4 V  
0
0
1
2
3
V
4
0
2
4
6
8
10  
12  
V
GS  
14  
(V)  
16  
(V)  
DS  
Tj = 25 °C  
Tj = 25 °C; ID = 25 A  
Fig. 6. Output characteristics; drain current as a  
function of drain-source voltage; typical values  
Fig. 7. Drain-source on-state resistance as a function  
of gate-source voltage; typical values  
aaa-027657  
aaa-027637  
-1  
250  
10  
I
D
I
D
(A)  
(A)  
-2  
-3  
-4  
-5  
-6  
200  
150  
100  
50  
10  
10  
10  
10  
10  
Min  
Typ  
Max  
175°C  
T = -55°C  
j
25°C  
0
0
0.5  
1
1.5  
2
2.5  
3
GS  
3.5  
(V)  
4
0
0.5  
1
1.5  
2
2.5  
(V)  
3
V
V
GS  
VDS = 8 V  
Tj = 25 °C; VDS = 5 V  
Fig. 8. Transfer characteristics; drain current as a  
function of gate-source voltage; typical values  
Fig. 9. Sub-threshold drain current as a function of  
gate-source voltage  
©
BUK9Y1R3-40H  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2018. All rights reserved  
Product data sheet  
31 May 2018  
7 / 12  
 
Nexperia  
BUK9Y1R3-40H  
N-channel 40 V, 1.3 mΩ logic level MOSFET in LFPAK56  
aaa-027638  
aaa-027658  
3
10  
V
GS(th)  
(V)  
R
(mΩ)  
DSon  
2.6 V  
2.8 V  
3 V  
2.5  
8
6
4
2
0
Max  
2
1.5  
1
Typ  
Min  
4.5 V  
0.5  
V
GS  
= 10 V  
0
-60 -30  
0
30  
60  
90 120 150 180  
0
50  
100  
150  
200  
250  
(A)  
300  
T (°C)  
I
j
D
ID = 1 mA ; VDS = VGS  
Fig. 10. Gate-source threshold voltage as a function of Fig. 11. Drain-source on-state resistance as a function  
junction temperature of drain current; typical values  
Tj = 25 °C  
aaa-027640  
aaa-027659  
2.4  
2.1  
1.8  
1.5  
1.2  
0.9  
0.6  
10  
a
V
GS  
(V)  
8
V
= 4.5 V  
GS  
6
V
= 14 V  
DS  
10 V  
20 V  
4
2
0
-60 -30  
0
30  
60  
90 120 150 180  
T (°C)  
0
18.33 36.67  
55  
73.33 91.67  
(nC)  
110  
Q
G
j
Tj = 25 °C; ID = 25 A  
Fig. 13. Gate-source voltage as a function of gate  
charge; typical values  
Fig. 12. Normalized drain-source on-state resistance  
factor as a function of junction temperature  
©
BUK9Y1R3-40H  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2018. All rights reserved  
Product data sheet  
31 May 2018  
8 / 12  
 
 
 
 
Nexperia  
BUK9Y1R3-40H  
N-channel 40 V, 1.3 mΩ logic level MOSFET in LFPAK56  
aaa-027660  
4
10  
V
C
C
iss  
DS  
(pF)  
I
D
C
C
3
oss  
10  
V
V
GS(pl)  
GS(th)  
rss  
V
GS  
2
Q
GS2  
10  
Q
GS1  
Q
GS  
Q
GD  
G(tot)  
Q
003aaa508  
10  
10  
Fig. 14. Gate charge waveform definitions  
-1  
2
1
10  
10  
V
DS  
(V)  
VGS = 0 V; f = 1 MHz  
Fig. 15. Input, output and reverse transfer capacitances  
as a function of drain-source voltage; typical  
values  
003aaf444  
aaa-027661  
300  
250  
200  
150  
100  
50  
I
S
I
D
(A)  
(A)  
t
rr  
t
t
b
a
0
0.25 I  
RM  
175°C  
T = 25°C  
j
t
t
I
b
a
RM  
S =  
0
0
0.2  
0.4  
0.6  
0.8  
1
(V)  
1.2  
t (s)  
V
SD  
VGS = 0 V  
Fig. 16. Source-drain (diode forward) current as a  
function of source-drain (diode forward)  
voltage; typical values  
Fig. 17. Reverse recovery waveform definitions  
©
BUK9Y1R3-40H  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2018. All rights reserved  
Product data sheet  
31 May 2018  
9 / 12  
 
 
 
 
Nexperia  
BUK9Y1R3-40H  
N-channel 40 V, 1.3 mΩ logic level MOSFET in LFPAK56  
11. Package outline  
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads  
SOT669  
A
2
E
A
C
c
E
b
2
1
2
b
3
L
1
mounting  
base  
b
4
D
1
D
H
L
2
1
2
3
4
X
e
w
A
c
b
1/2 e  
A
(A )  
3
C
A
1
q
L
detail X  
y
C
θ
8
0
0
5 mm  
°
°
scale  
Dimensions (mm are the original dimensions)  
(1)  
(1)  
(1)  
(1)  
(1)  
Unit  
A
A
A
A
b
b
b
b
4
c
c
2
D
D
1
E
E
e
H
L
L
L
2
w
y
1
2
3
2
3
1
1
max 1.20 0.15 1.10  
nom  
min 1.01 0.00 0.95  
0.50 4.41 2.2 0.9 0.25 0.30 4.10 4.20 5.0 3.3  
6.2 0.85 1.3 1.3  
5.8 0.40 0.8 0.8  
0.1  
0.25  
1.27  
0.25  
mm  
0.35 3.62 2.0 0.7 0.19 0.24 3.80  
4.8 3.1  
Note  
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.  
sot669_po  
Issue date  
11-03-25  
References  
Outline  
version  
European  
projection  
IEC  
JEDEC  
JEITA  
SOT669  
MO-235  
13-02-27  
Fig. 18. Package outline LFPAK56; Power-SO8 (SOT669)  
©
BUK9Y1R3-40H  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2018. All rights reserved  
Product data sheet  
31 May 2018  
10 / 12  
 
Nexperia  
BUK9Y1R3-40H  
N-channel 40 V, 1.3 mΩ logic level MOSFET in LFPAK56  
Suitability for use in automotive applications — This Nexperia product  
has been qualified for use in automotive applications. Unless otherwise  
agreed in writing, the product is not designed, authorized or warranted to  
be suitable for use in life support, life-critical or safety-critical systems or  
equipment, nor in applications where failure or malfunction of an Nexperia  
product can reasonably be expected to result in personal injury, death or  
severe property or environmental damage. Nexperia and its suppliers accept  
no liability for inclusion and/or use of Nexperia products in such equipment or  
applications and therefore such inclusion and/or use is at the customer's own  
risk.  
12. Legal information  
Data sheet status  
Document status Product  
Definition  
[1][2]  
status [3]  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Objective [short]  
data sheet  
Development  
This document contains data from  
the objective specification for  
product development.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. Nexperia makes no representation  
or warranty that such applications will be suitable for the specified use  
without further testing or modification.  
Preliminary [short]  
data sheet  
Qualification  
Production  
This document contains data from  
the preliminary specification.  
Product [short]  
data sheet  
This document contains the product  
specification.  
Customers are responsible for the design and operation of their applications  
and products using Nexperia products, and Nexperia accepts no liability for  
any assistance with applications or customer product design. It is customer’s  
sole responsibility to determine whether the Nexperia product is suitable  
and fit for the customer’s applications and products planned, as well as  
for the planned application and use of customer’s third party customer(s).  
Customers should provide appropriate design and operating safeguards to  
minimize the risks associated with their applications and products.  
[1] Please consult the most recently issued document before initiating or  
completing a design.  
[2] The term 'short data sheet' is explained in section "Definitions".  
[3] The product status of device(s) described in this document may have  
changed since this document was published and may differ in case of  
multiple devices. The latest product status information is available on  
the internet at https://www.nexperia.com.  
Nexperia does not accept any liability related to any default, damage, costs  
or problem which is based on any weakness or default in the customer’s  
applications or products, or the application or use by customer’s third party  
customer(s). Customer is responsible for doing all necessary testing for the  
customer’s applications and products using Nexperia products in order to  
avoid a default of the applications and the products or of the application or  
use by customer’s third party customer(s). Nexperia does not accept any  
liability in this respect.  
Definitions  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. Nexperia does not give any representations or  
warranties as to the accuracy or completeness of information included herein  
and shall have no liability for the consequences of use of such information.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those  
given in the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is  
intended for quick reference only and should not be relied upon to contain  
detailed and full information. For detailed and full information see the relevant  
full data sheet, which is available on request via the local Nexperia sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Terms and conditions of commercial sale — Nexperia products are  
sold subject to the general terms and conditions of commercial sale, as  
published at http://www.nexperia.com/profile/terms, unless otherwise agreed  
in a valid written individual agreement. In case an individual agreement is  
concluded only the terms and conditions of the respective agreement shall  
apply. Nexperia hereby expressly objects to applying the customer’s general  
terms and conditions with regard to the purchase of Nexperia products by  
customer.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
Nexperia and its customer, unless Nexperia and customer have explicitly  
agreed otherwise in writing. In no event however, shall an agreement be  
valid in which the Nexperia product is deemed to offer functions and qualities  
beyond those described in the Product data sheet.  
Disclaimers  
No offer to sell or license — Nothing in this document may be interpreted  
or construed as an offer to sell products that is open for acceptance or the  
grant, conveyance or implication of any license under any copyrights, patents  
or other industrial or intellectual property rights.  
Limited warranty and liability — Information in this document is believed  
to be accurate and reliable. However, Nexperia does not give any  
representations or warranties, expressed or implied, as to the accuracy  
or completeness of such information and shall have no liability for the  
consequences of use of such information. Nexperia takes no responsibility  
for the content in this document if provided by an information source outside  
of Nexperia.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
Translations — A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
In no event shall Nexperia be liable for any indirect, incidental, punitive,  
special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal  
or replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Trademarks  
Notice: All referenced brands, product names, service names and  
trademarks are the property of their respective owners.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, Nexperia’s aggregate and cumulative liability towards customer  
for the products described herein shall be limited in accordance with the  
Terms and conditions of commercial sale of Nexperia.  
Right to make changes — Nexperia reserves the right to make changes  
to information published in this document, including without limitation  
specifications and product descriptions, at any time and without notice. This  
document supersedes and replaces all information supplied prior to the  
publication hereof.  
©
BUK9Y1R3-40H  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2018. All rights reserved  
Product data sheet  
31 May 2018  
11 / 12  
 
Nexperia  
BUK9Y1R3-40H  
N-channel 40 V, 1.3 mΩ logic level MOSFET in LFPAK56  
Contents  
1. General description......................................................1  
2. Features and benefits.................................................. 1  
3. Applications.................................................................. 1  
4. Quick reference data....................................................1  
5. Pinning information......................................................2  
6. Ordering information....................................................2  
7. Marking..........................................................................2  
8. Limiting values............................................................. 2  
9. Thermal characteristics............................................... 4  
10. Characteristics............................................................5  
11. Package outline........................................................ 10  
12. Legal information.......................................................11  
© Nexperia B.V. 2018. All rights reserved  
For more information, please visit: http://www.nexperia.com  
For sales office addresses, please send an email to: salesaddresses@nexperia.com  
Date of release: 31 May 2018  
©
BUK9Y1R3-40H  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2018. All rights reserved  
Product data sheet  
31 May 2018  
12 / 12  

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