BUK9Y27-40B [NEXPERIA]

N-channel TrenchMOS logic level FETProduction;


型号：	BUK9Y27-40B
厂家：	Nexperia
描述：	N-channel TrenchMOS logic level FETProduction
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中文：	中文翻译
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BUK9Y27-40B

N-channel TrenchMOS logic level FET

Rev. 04 — 7 April 2010

Product data sheet

1. Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

Low conduction losses due to low

Suitable for logic level gate drive

on-state resistance

sources

Q101 compliant

Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

12 V loads

General purpose power switching

Motors, lamps and solenoids

Automotive systems

1.4 Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min Typ Max Unit

V_DS

drain-source

voltage

T_j≥ 25 °C; T_j≤ 175 °C

I_D

drain current

V_GS= 5 V; T_mb= 25 °C;

see Figure 1; see Figure 4

P_tot

total power

dissipation

T_mb= 25 °C; see Figure 2

59.4

Static characteristics

R_DSondrain-source

V_GS= 5 V; I_D= 15 A;

T_j= 25 °C; see Figure 12;

see Figure 13

mΩ

on-state

resistance

V_GS= 10 V; I_D= 15 A;

T_j= 25 °C; see Figure 12

BUK9Y27-40B

Nexperia

N-channel TrenchMOS logic level FET

Table 1.

Symbol

Quick reference data …continued

Parameter Conditions

Min Typ Max Unit

Avalanche ruggedness

E_DS(AL)S

non-repetitive

drain-source

I_D= 34 A; V_sup≤ 40 V;

R_GS= 50 Ω; V_GS= 5 V;

avalanche energy T_j(init)= 25 °C; unclamped

Dynamic characteristics

Q_GDgate-drain charge V_GS= 5 V; I_D= 15 A;

4.2

_DS= 32 V; see Figure 14

2. Pinning information

Table 2.

Pinning information

Symbol Description

Simplified outline

Graphic symbol

source

gate

mbb076

mounting base; connected to

drain

2 3 4

SOT669 (LFPAK)

3. Ordering information

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BUK9Y27-40B

LFPAK

plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669

BUK9Y27-40B

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Product data sheet

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Nexperia

N-channel TrenchMOS logic level FET

4. Limiting values

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_DS

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain-gate voltage

gate-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

R_GS= 20 kΩ

V_DGR

V_GS

-15

I_D

T_mb= 25 °C; V_GS= 5 V; see Figure 1;

see Figure 4

T_mb= 100 °C; V_GS= 5 V; see Figure 1

I_DM

peak drain current

T_mb= 25 °C; t_p≤ 10 µs; pulsed;

136

see Figure 4

P_tot

T_stg

T_j

total power dissipation T_mb= 25 °C; see Figure 2

storage temperature

59.4

175

-55

°C

junction temperature

Source-drain diode

I_S

source current

peak source current

T_mb= 25 °C

I_SM

t_p≤ 10 µs; pulsed; T_mb= 25 °C

136

Avalanche ruggedness

E_DS(AL)Snon-repetitive

I_D= 34 A; V_sup≤ 40 V; R_GS= 50 Ω;

V_GS= 5 V; T_j(init)= 25 °C; unclamped

drain-source

avalanche energy

[1][2][3]

[4]

E_DS(AL)R

repetitive drain-source see Figure 3

avalanche energy

[1] Maximum value not quoted. Repetitive rating defined in avalanche rating figure.

[2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.

[3] Repetitive avalanche rating limited by an average junction temperature of 170 °C.

[4] Refer to application note AN10273 for further information.

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Product data sheet

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Nexperia

N-channel TrenchMOS logic level FET

003aab844

003aac519

120

I_D

der

(A)

(%)

100

150

200

100

150

T_mb( C)

200

(°C)

Fig 1. Continuous drain current as a function of

mounting base temperature

Fig 2. Normalized total power dissipation as a

function of mounting base temperature

003aac498

10²

I_AL

(A)

(1)

(2)

(3)

10^-1

10^-3

10^-2

10^-1

t_AL(ms)

Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time

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Product data sheet

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N-channel TrenchMOS logic level FET

003aac619

10³

Limit R_DSon= V_DS/ I_D

I_D

(A)

10²

10μs

100μs

1ms

10ms

100ms

10^-1

10²

V_DS(V)

Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

5. Thermal characteristics

Table 5.

Symbol

R_th(j-mb)

Thermal characteristics

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance

from junction to

mounting base

see Figure 5

2.53

K/W

003aac483

Z_{th (j-mb)}

(K/W)

δ = 0.5

0.2

0.1

0.05

0.02

10^-1

δ =

single shot

10^-2

10^-6

10^-5

10^-4

10^-3

10^-2

10^-1

t_p(s)

Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration.

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Product data sheet

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N-channel TrenchMOS logic level FET

6. Characteristics

Table 6.

Symbol

Characteristics

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V_(BR)DSS

drain-source

breakdown voltage

I_D= 0.25 mA; V_GS= 0 V; T_j= -55 °C

I_D= 0.25 mA; V_GS= 0 V; T_j= 25 °C

1.1

V_GS(th)

V_GSth

gate-source threshold I_D= 1 mA; V_DS= V_GS; T_j= 25 °C;

voltage see Figure 10; see Figure 11

1.5

gate-source threshold I_D= 1 mA; V_DS= V_GS; T_j= 175 °C;

voltage

0.5

see Figure 10; see Figure 11

I_D= 1 mA; V_DS= V_GS; T_j= -55 °C;

see Figure 10; see Figure 11

2.3

I_DSS

drain leakage current

gate leakage current

V_DS= 40 V; V_GS= 0 V; T_j= 25 °C

V_DS= 40 V; V_GS= 0 V; T_j= 175 °C

V_DS= 0 V; V_GS= 15 V; T_j= 25 °C

V_DS= 0 V; V_GS= -15 V; T_j= 25 °C

0.02

µA

mΩ

500

100

I_GSS

R_DSon

drain-source on-state

resistance

V_GS= 5 V; I_D= 15 A; T_j= 25 °C;

see Figure 12; see Figure 13

V_GS= 4.5 V; I_D= 15 A; T_j= 25 °C

mΩ

V_GS= 5 V; I_D= 15 A; T_j= 175 °C;

see Figure 13

V_GS= 10 V; I_D= 15 A; T_j= 25 °C;

mΩ

see Figure 12

Dynamic characteristics

Q_G(tot)

Q_GS

Q_GD

C_iss

total gate charge

I_D= 15 A; V_DS= 32 V; V_GS= 5 V;

see Figure 14

gate-source charge

gate-drain charge

input capacitance

output capacitance

2.5

4.2

719

146

V_GS= 0 V; V_DS= 25 V; f = 1 MHz;

T_j= 25 °C; see Figure 15

959

175

114

C_oss

C_rss

reverse transfer

capacitance

t_d(on)

t_r

t_d(off)

t_f

turn-on delay time

rise time

V_DS= 30 V; R_L= 2 Ω; V_GS= 5 V;

R_G(ext)= 10 Ω

14.5

turn-off delay time

fall time

Source-drain diode

V_SD

source-drain voltage

I_S= 15 A; V_GS= 0 V; T_j= 25 °C;

see Figure 16

0.85

1.2

t_rr

reverse recovery time I_S= 20 A; dI_S/dt = -100 A/µs; V_GS= 0 V;

V_DS= 30 V

Q_r

recovered charge

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Product data sheet

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Nexperia

N-channel TrenchMOS logic level FET

003aac871

003aac873

100

I_D

(A)

4.5

3.5

T_j= 175 °C

T_j= 25 °C

2.5

V_GS(V) = 2

_DS(V)

V_GS(V)

Fig 6. Output characteristics: drain current as a

function of drain-source voltage; typical values.

Fig 7. Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

003aac878

003aac872

100

4.5

R_DSon

g_fs

(S)

(mΩ)

3.5

V_GS(V) = 15

100

I_D(A)

Fig 8. Forward transconductance as a function of

drain current; typical values.

Fig 9. Drain-source on-state resistance as a function

of drain current; typical values.

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N-channel TrenchMOS logic level FET

003aab986

003aab987

−1

−2

−3

−4

−5

−6

2.5

GS(th)

(V)

(A)

2.0

max

min

typ

max

1.5

1.0

0.5

typ

min

0.0

−60

120

180

T (°C)

(V)

Fig 10. Gate-source threshold voltage as a function of

junction temperature

Fig 11. Sub-threshold drain current as a function of

gate-source voltage

003aac877

03nb25

2.4

R_DSon

(mΩ)

1.6

0.8

−60

120

180

V_GS(V)

T (°C)

Fig 12. Drain-source on-state resistance as a function

of gate-source voltage; typical values.

Fig 13. Normalized drain-source on-state resistance

factor as a function of junction temperature

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N-channel TrenchMOS logic level FET

003aac874

003aac876

V_GS

(V)

10⁴

(pF)

C_iss

10³

10²

V_DS= 14V

V_DS= 32V

C_oss

C_rss

10^-1

10²

_G(nC)

V_DS(V)

Fig 14. Gate-source voltage as a function of gate

charge; typical values.

Fig 15. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values.

003aac875

I_S

(A)

T_j= 175 °C

T_j= 25 °C

0.3

0.6

0.9

1.2

_SD(V)

Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.

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Product data sheet

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N-channel TrenchMOS logic level FET

7. Package outline

Plastic single-ended surface-mounted package (LFPAK); 4 leads

SOT669

mounting

base

1/2 e

(A )

detail X

2.5

5 mm

scale

DIMENSIONS (mm are the original dimensions)

(1)

UNIT

max

1.20 0.15 1.10

1.01 0.00 0.95

0.50 4.41 2.2 0.9 0.25 0.30 4.10

0.35 3.62 2.0 0.7 0.19 0.24 3.80

5.0 3.3

4.8 3.1

6.2 0.85 1.3 1.3

5.8 0.40 0.8 0.8

8°

0°

0.25

4.20

1.27

0.25 0.1

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

REFERENCES

OUTLINE

EUROPEAN

PROJECTION

ISSUE DATE

VERSION

IEC

JEDEC

JEITA

04-10-13

06-03-16

SOT669

MO-235

Fig 17. Package outline SOT669 (LFPAK)

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Product data sheet

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N-channel TrenchMOS logic level FET

8. Revision history

Table 7.

Revision history

Document ID

Release date

Data sheet status

Change notice

Supersedes

BUK9Y27-40B_4

Modifications:

20100407

Product data sheet

BUK9Y27-40B_3

• Status changed from objective to product.

20100216 Objective data sheet

BUK9Y27-40B_3

BUK9Y27-40B_2

BUK9Y27-40B

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N-channel TrenchMOS logic level FET

9. Legal information

9.1 Data sheet status

Document status^[1][2]

Product status^[3]

Definition

Objective [short] data sheet

Development

This document contains data from the objective specification for product development.

This document contains data from the preliminary specification.

This document contains the product specification.

Preliminary [short] data sheet Qualification

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term 'short data sheet' is explained in section "Definitions".

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nexperia.com.

Suitability for use in automotive applications — This Nexperia

product has been qualified for use in automotive

9.2 Definitions

applications. The product is not designed, authorized or warranted to be

suitable for use in medical, military, aircraft, space or life support equipment,

nor in applications where failure or malfunction of a Nexperia

product can reasonably be expected to result in personal injury, death or

severe property or environmental damage. Nexperia accepts no

liability for inclusion and/or use of Nexperia products in such

equipment or applications and therefore such inclusion and/or use is at the

customer’s own risk.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Nexperia does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local Nexperia sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall prevail.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Nexperia does not accept any liability related to any default,

damage, costs or problem which is based on a weakness or default in the

customer application/use or the application/use of customer’s third party

customer(s) (hereinafter both referred to as “Application”). It is customer’s

sole responsibility to check whether the Nexperia product is

suitable and fit for the Application planned. Customer has to do all necessary

testing for the Application in order to avoid a default of the Application and the

product. Nexperia does not accept any liability in this respect.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

Nexperia and its customer, unless Nexperia and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the Nexperia product is

deemed to offer functions and qualities beyond those described in the

Product data sheet.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Limiting values — Stress above one or more limiting values (as defined in the

Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

9.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, Nexperia does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall Nexperia be liable for any indirect, incidental,

punitive, special or consequential damages (including - without limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Terms and conditions of commercial sale — Nexperia

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nexperia.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

agreement shall apply. Nexperia hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of Nexperia products by customer.

Notwithstanding any damages that customer might incur for any reason

whatsoever, Nexperia’s aggregate and cumulative liability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of Nexperia.

Right to make changes — Nexperia reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

No offer to sell or license — Nothing in this document may be interpreted or

construed as an offer to sell products that is open for acceptance or the grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

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Product data sheet

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Nexperia

N-channel TrenchMOS logic level FET

Export control — This document as well as the item(s) described herein may

be subject to export control regulations. Export might require a prior

authorization from national authorities.

10. Contact information

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

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N-channel TrenchMOS logic level FET

11. Contents

Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1

1.2

1.3

1.4

General description . . . . . . . . . . . . . . . . . . . . . .1

Features and benefits. . . . . . . . . . . . . . . . . . . . .1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

Quick reference data . . . . . . . . . . . . . . . . . . . . .1

Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

Ordering information. . . . . . . . . . . . . . . . . . . . . .2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3

Thermal characteristics . . . . . . . . . . . . . . . . . . .5

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6

Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10

Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11

Legal information. . . . . . . . . . . . . . . . . . . . . . . .12

Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12

Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .12

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13

9.1

9.2

9.3

9.4

Contact information. . . . . . . . . . . . . . . . . . . . . .13

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 07 April 2010

BUK9Y27-40B [NEXPERIA]

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