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BZV90-C6V2 [NEXPERIA]

Voltage regulator diodesProduction;
BZV90-C6V2
型号： BZV90-C6V2
厂家： Nexperia    Nexperia
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Voltage regulator diodesProduction

测试 光电二极管
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Important notice  
Dear Customer,  
On 7 February 2017 the former NXP Standard Product business became a new company with the  
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS  
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable  
application markets  
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use  
the references to Nexperia, as shown below.  
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,  
use http://www.nexperia.com  
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use  
salesaddresses@nexperia.com (email)  
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on  
the version, as shown below:  
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights  
reserved  
Should be replaced with:  
- © Nexperia B.V. (year). All rights reserved.  
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail  
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and  
understanding,  
Kind regards,  
Team Nexperia  
DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
BZV90 series  
Voltage regulator diodes  
Product data sheet  
1999 May 17  
Supersedes data of 1996 Oct 25  
NXP Semiconductors  
Product data sheet  
Voltage regulator diodes  
BZV90 series  
FEATURES  
PINNING  
• Total power dissipation:  
max. 1500 mW  
PIN  
1
DESCRIPTION  
anode  
cathode  
anode  
• Tolerance series: approx. ±5%  
2, 4  
3
• Working voltage range:  
nom. 2.4 to 75 V (E24 range)  
• Non-repetitive peak reverse power  
dissipation: max. 40 W.  
handbook, halfpage  
4
APPLICATIONS  
• General regulation functions.  
3
1
DESCRIPTION  
Medium-power voltage regulator  
diodes in SOT223 plastic SMD  
packages.  
2, 4  
1
2
3
The diodes are available in the  
normalized E24 approx. ±5%  
tolerance range. The series consists  
of 37 types with nominal working  
voltages from 2.4 to 75 V  
MAM242  
Top view  
Fig.1 Simplified outline (SOT223) and symbol.  
(BZV90-C2V4 to C75).  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
IF  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
400  
UNIT  
mA  
continuous forward current  
−
IZSM  
non-repetitive peak reverse current tp = 100 μs; square wave;  
Tj = 25 °C prior to surge  
see Table  
“Per type”  
Ptot  
total power dissipation  
Tamb = 25 °C; note 1  
−
−
1500  
40  
mW  
W
PZSM  
non-repetitive peak reverse power tp = 100 μs; square wave;  
dissipation  
Tj = 25 °C prior to surge; see Fig.2  
Tstg  
Tj  
storage temperature  
junction temperature  
−65  
+150  
150  
°C  
°C  
−
Note  
1. Device mounted on an FR4 double-sided copper-clad printed circuit-board; copper area = 2 cm2.  
ELECTRICAL CHARACTERISTICS  
Total series  
Tj = 25 °C unless otherwise specified.  
SYMBOL  
VF  
PARAMETER  
forward voltage  
CONDITIONS  
MIN.  
MAX.  
UNIT  
IF = 50 mA; see Fig.3  
−
1.0  
V
1999 May 17  
2
Per type  
Tj = 25 °C unless otherwise specified.  
WORKING  
VOLTAGE  
VZ (V)  
DIFFERENTIAL  
RESISTANCE  
TEMP. COEFF.  
SZ (mV/K)  
at IZtest  
see Figs 4 and 5  
TEST  
CURRENT  
IZtest (mA) at f = 1 MHz;  
at VR = 0 V  
DIODE CAP.  
Cd (pF)  
REVERSE  
CURRENT at  
REVERSE  
NON-REPETITIVE PEAK  
REVERSE CURRENT  
IZSM (A)  
rdif (Ω)  
at IZtest  
BZV90-  
CXXX  
at IZtest  
VOLTAGE  
at tp = 100 μs;  
T
amb = 25 °C  
IR (μA)  
VR  
(V)  
MIN. MAX.  
TYP.  
MAX.  
MIN. TYP. MAX.  
MAX.  
MAX.  
MAX.  
2V4  
2V7  
3V0  
3V3  
3V6  
3V9  
4V3  
4V7  
5V1  
5V6  
6V2  
6V8  
7V5  
8V2  
9V1  
10  
2.2  
2.5  
2.6  
2.9  
70  
75  
80  
85  
85  
85  
80  
50  
40  
15  
6
100  
100  
95  
95  
90  
90  
90  
80  
60  
40  
10  
15  
15  
15  
15  
20  
20  
25  
30  
30  
40  
45  
55  
−3.5 −1.6  
−3.5 −2.0  
−3.5 −2.1  
−3.5 −2.4  
−3.5 −2.4  
−3.5 −2.5  
−3.5 −2.5  
−3.5 −1.4  
−2.7 −0.8  
0
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
450  
450  
450  
450  
450  
450  
450  
300  
300  
300  
200  
200  
150  
150  
150  
90  
50  
20  
10  
5
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
2.0  
2.0  
2.0  
4.0  
4.0  
5.0  
5.0  
6.0  
7.0  
8.0  
8.0  
8.0  
10.5  
11.2  
12.6  
14.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
4.0  
4.0  
3.0  
3.0  
2.5  
2.5  
2.5  
2.0  
1.5  
1.5  
1.5  
0
2.8  
3.2  
0
3.1  
3.5  
0
3.4  
3.8  
0
5
3.7  
4.1  
0
3
4.0  
4.6  
0
3
4.4  
5.0  
0.2  
1.2  
2.5  
3.7  
4.5  
5.3  
6.2  
7.0  
8.0  
9.0  
3
4.8  
5.4  
2
5.2  
6.0  
−2.0  
0.4  
1.2  
2.5  
3.2  
3.8  
4.5  
5.4  
6.0  
7.0  
1.2  
2.3  
3.0  
4.0  
4.6  
5.5  
6.4  
7.4  
1
5.8  
6.6  
3
6.4  
7.2  
6
2
7.0  
7.9  
6
1
7.7  
8.7  
6
0.7  
8.5  
9.6  
6
0.5  
9.4  
10.6  
11.6  
12.7  
14.1  
15.6  
17.1  
19.1  
21.2  
8
0.2  
11  
10.4  
11.4  
12.4  
13.8  
15.3  
16.8  
18.8  
10  
10  
10  
10  
10  
10  
15  
85  
0.1  
12  
8.4 10.0  
9.4 11.0  
85  
0.1  
13  
80  
0.1  
15  
9.2 11.4 13.0  
10.4 12.4 14.0  
12.4 14.4 16.0  
14.4 16.4 18.0  
75  
0.05  
0.05  
0.05  
0.05  
16  
75  
18  
70  
20  
60  
WORKING  
VOLTAGE  
VZ (V)  
DIFFERENTIAL  
RESISTANCE  
rdif (Ω)  
TEMP. COEFF.  
SZ (mV/K)  
at IZtest  
see Figs 4 and 5  
TEST  
CURRENT  
Ztest (mA) at f = 1 MHz;  
DIODE CAP.  
Cd (pF)  
REVERSE  
CURRENT at  
REVERSE  
NON-REPETITIVE PEAK  
REVERSE CURRENT  
I
I
ZSM (A)  
BZV90-  
CXXX  
at IZtest  
at IZtest  
at VR = 0 V  
VOLTAGE  
at tp = 100 μs;  
T
amb = 25 °C  
IR (μA)  
VR  
(V)  
MIN. MAX.  
TYP.  
MAX.  
MIN. TYP. MAX.  
MAX.  
MAX.  
MAX.  
22  
24  
27  
30  
33  
36  
39  
43  
47  
51  
56  
62  
68  
75  
20.8  
22.8  
25.0  
28.0  
31.0  
34.0  
37.0  
40.0  
44.0  
48.0  
52.0  
58.0  
64.0  
70.0  
23.3  
25.6  
28.9  
32.0  
35.0  
38.0  
41.0  
46.0  
50.0  
54.0  
60.0  
66.0  
72.0  
79.0  
20  
25  
25  
30  
35  
35  
40  
45  
50  
60  
70  
80  
90  
95  
55  
70  
16.4 18.4 20.0  
18.4 20.4 22.0  
21.4 23.4 25.3  
24.4 26.6 29.4  
27.4 29.7 33.4  
30.4 33.0 37.4  
33.4 36.4 41.2  
37.6 41.2 46.6  
42.0 46.1 51.8  
46.6 51.0 57.2  
52.2 57.0 63.8  
58.8 64.4 71.6  
65.6 71.7 79.8  
73.4 80.2 88.6  
5
5
2
2
2
2
2
2
2
2
2
2
2
2
60  
55  
50  
50  
45  
45  
45  
40  
40  
40  
40  
35  
35  
35  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
15.4  
16.8  
18.9  
21.0  
23.1  
25.2  
27.3  
30.1  
32.9  
35.7  
39.2  
43.4  
47.6  
52.5  
1.25  
1.25  
1.0  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.3  
0.25  
0.2  
80  
80  
80  
90  
130  
150  
170  
180  
200  
215  
240  
255  
NXP Semiconductors  
Product data sheet  
Voltage regulator diodes  
BZV90 series  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
thermal resistance from junction to ambient  
CONDITIONS  
VALUE  
UNIT  
Rth j-a  
lead length max.; note 1  
83.3  
K/W  
Note  
1. Device mounted on an FR4 double-sided copper-clad printed circuit-board; copper area = 2 cm2.  
GRAPHICAL DATA  
MBG781  
MBG801  
3
10  
300  
handbook, halfpage  
handbook, halfpage  
I
F
P
ZSM  
(mA)  
(W)  
2
200  
10  
(1)  
(2)  
100  
10  
0
0.6  
1
10  
0.8  
1
−1  
V
(V)  
1
duration (ms)  
10  
F
(1) Tj = 25 °C (prior to surge).  
(2) Tj = 150 °C (prior to surge).  
Tj = 25 °C.  
Fig.2 Maximum permissible non-repetitive peak  
reverse power dissipation versus duration.  
Fig.3 Forward current as a function of forward  
voltage; typical values.  
1999 May 17  
5
NXP Semiconductors  
Product data sheet  
Voltage regulator diodes  
BZV90 series  
MBG927  
1
4V3  
S
Z
(mV/K)  
3V9  
3V6  
3V3  
3V0  
0
−1  
−2  
−3  
2V7  
2V4  
-3  
-2  
-1  
10  
10  
10  
1
I
(A)  
Z
BZV90-C2V4 to C4V3.  
Tj = 25 to 150 °C.  
Fig.4 Temperature coefficient as a function of working current; typical values.  
MBG924  
10  
handbook, halfpage  
S
Z
(mV/K)  
10  
9V1  
5
8V2  
7V5  
6V8  
6V2  
5V6  
5V1  
0
4V7  
−5  
0
4
8
12  
16  
20  
I
(mA)  
Z
BZV90-C4V7 to C10.  
Tj = 25 to 150 °C.  
Fig.5 Temperature coefficient as a function of  
working current; typical values.  
1999 May 17  
6
NXP Semiconductors  
Product data sheet  
Voltage regulator diodes  
BZV90 series  
PACKAGE OUTLINE  
Plastic surface mounted package; collector pad for good heat transfer; 4 leads  
SOT223  
D
B
E
A
X
c
y
H
v
M
A
E
b
1
4
Q
A
A
1
L
1
2
3
p
e
b
p
w
M
B
detail X  
1
e
0
2
4 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
UNIT  
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
1
E
1.8  
1.5  
0.10 0.80  
0.01 0.60  
3.1  
2.9  
0.32  
0.22  
6.7  
6.3  
3.7  
3.3  
7.3  
6.7  
1.1  
0.7  
0.95  
0.85  
mm  
4.6  
2.3  
0.2  
0.1  
0.1  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
97-02-28  
99-09-13  
SOT223  
SC-73  
1999 May 17  
7
NXP Semiconductors  
Product data sheet  
Voltage regulator diodes  
BZV90 series  
DATA SHEET STATUS  
DOCUMENT  
STATUS(1)  
PRODUCT  
STATUS(2)  
DEFINITION  
Objective data sheet  
Development  
This document contains data from the objective specification for product  
development.  
Preliminary data sheet  
Product data sheet  
Qualification  
Production  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Notes  
1. Please consult the most recently issued document before initiating or completing a design.  
2. The product status of device(s) described in this document may have changed since this document was published  
and may differ in case of multiple devices. The latest product status information is available on the Internet at  
URL http://www.nxp.com.  
DISCLAIMERS  
document is not implied. Exposure to limiting values for  
extended periods may affect device reliability.  
General ⎯ Information in this document is believed to be  
accurate and reliable. However, NXP Semiconductors  
does not give any representations or warranties,  
expressed or implied, as to the accuracy or completeness  
of such information and shall have no liability for the  
consequences of use of such information.  
Terms and conditions of sale ⎯ NXP Semiconductors  
products are sold subject to the general terms and  
conditions of commercial sale, as published at  
http://www.nxp.com/profile/terms, including those  
pertaining to warranty, intellectual property rights  
infringement and limitation of liability, unless explicitly  
otherwise agreed to in writing by NXP Semiconductors. In  
case of any inconsistency or conflict between information  
in this document and such terms and conditions, the latter  
will prevail.  
Right to make changes ⎯ NXP Semiconductors  
reserves the right to make changes to information  
published in this document, including without limitation  
specifications and product descriptions, at any time and  
without notice. This document supersedes and replaces all  
information supplied prior to the publication hereof.  
No offer to sell or license ⎯ Nothing in this document  
may be interpreted or construed as an offer to sell products  
that is open for acceptance or the grant, conveyance or  
implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Suitability for use ⎯ NXP Semiconductors products are  
not designed, authorized or warranted to be suitable for  
use in medical, military, aircraft, space or life support  
equipment, nor in applications where failure or malfunction  
of an NXP Semiconductors product can reasonably be  
expected to result in personal injury, death or severe  
property or environmental damage. NXP Semiconductors  
accepts no liability for inclusion and/or use of NXP  
Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
Export control ⎯ This document as well as the item(s)  
described herein may be subject to export control  
regulations. Export might require a prior authorization from  
national authorities.  
Quick reference data ⎯ The Quick reference data is an  
extract of the product data given in the Limiting values and  
Characteristics sections of this document, and as such is  
not complete, exhaustive or legally binding.  
Applications ⎯ Applications that are described herein for  
any of these products are for illustrative purposes only.  
NXP Semiconductors makes no representation or  
warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Limiting values ⎯ Stress above one or more limiting  
values (as defined in the Absolute Maximum Ratings  
System of IEC 60134) may cause permanent damage to  
the device. Limiting values are stress ratings only and  
operation of the device at these or any other conditions  
above those given in the Characteristics sections of this  
1999 May 17  
8
NXP Semiconductors  
Customer notification  
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal  
definitions and disclaimers. No changes were made to the technical content, except for package outline  
drawings which were updated to the latest version.  
Contact information  
For additional information please visit: http://www.nxp.com  
For sales offices addresses send e-mail to: salesaddresses@nxp.com  
© NXP B.V. 2009  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
115002/00/03/pp9  
Date of release: 1999 May 17  
Document order number: 9397 750 05928  

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