GAN063-650WSA [NEXPERIA]
650 V, 50 mΩ Gallium Nitride (GaN) FETProduction;
| 型号： | GAN063-650WSA |
| 厂家： | 
Nexperia |
| 描述： | 650 V, 50 mΩ Gallium Nitride (GaN) FETProduction |
| 文件： | 总11页 (文件大小：282K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GAN063-650WSA
650 V, 50 mΩ Gallium Nitride (GaN) FET
20 March 2020
Product data sheet
1. General description
The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that
combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET
technologies — offering superior reliability and performance.
2. Features and benefits
•
Ultra-low reverse recovery charge
•
•
•
•
•
Simple gate drive (0 V to +10 V or 12 V)
Robust gate oxide (±20 V capability)
High gate threshold voltage (+4 V) for very good gate bounce immunity
Very low source-drain voltage in reverse conduction mode
Transient over-voltage capability (800 V)
3. Applications
•
•
•
•
Hard and soft switching converters for industrial and datacom power
Bridgeless totempole PFC
PV and UPS inverters
Servo motor drives
4. Quick reference data
Table 1. Quick reference data
Symbol
VDS
ID
Parameter
Conditions
Min
Typ
Max
650
34.5
143
175
Unit
V
drain-source voltage
drain current
-55 °C ≤ Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C; Fig. 2
-
-
-
-
-
-
A
Ptot
total power dissipation Tmb = 25 °C; Fig. 1
junction temperature
-
W
Tj
-55
°C
Static characteristics
RDSon drain-source on-state
resistance
Dynamic characteristics
VGS = 10 V; ID = 25 A; Tj = 25 °C
-
50
60
mΩ
QGD
gate-drain charge
total gate charge
ID = 25 A; VDS = 400 V; VGS = 10 V;
Tj = 25 °C
-
-
4
-
-
nC
nC
QG(tot)
15
Source-drain diode
Qr recovered charge
IS = 25 A; dIS/dt = -1000 A/µs;
VGS = 0 V; VDS = 400 V; Fig. 14
-
125
-
nC
Nexperia
GAN063-650WSA
650 V, 50 mΩ Gallium Nitride (GaN) FET
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
gate
Simplified outline
Graphic symbol
mb
D
G
S
D
S
2
source
drain
3
mb
mounting base; connected
to source
G
S
1
2
3
aaa-028116
TO-247 (SOT429)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
GAN063-650WSA
TO-247
plastic, single-ended through-hole package; 3 leads; 5.45 mm
pitch; 20.45 mm x 15.6 mm x 4.95 mm body
SOT429
7. Marking
Table 4. Marking codes
Type number
Marking code
GAN063-650WSA
GAN063-650WSA
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
Unit
V
drain-source voltage
-55 °C ≤ Tj ≤ 175 °C
-
-
650
800
VTDS
transient drain to source pulsed; tp = 1 µs; δfactor = 0.01
voltage
V
VGS
Ptot
ID
gate-source voltage
-20
20
V
total power dissipation
drain current
Tmb = 25 °C; Fig. 1
-
143
34.5
24.4
150
175
175
260
W
A
VGS = 10 V; Tmb = 25 °C; Fig. 2
VGS = 10 V; Tmb = 100 °C; Fig. 2
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
-
-
A
IDM
peak drain current
storage temperature
junction temperature
-
A
Tstg
Tj
-55
-55
-
°C
°C
°C
Tsld(M)
peak soldering
temperature
Source-drain diode
IS
source current
Tmb = 25 °C; VGS = 0 V
-
34.5
A
©
GAN063-650WSA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
20 March 2020
2 / 11
Nexperia
GAN063-650WSA
650 V, 50 mΩ Gallium Nitride (GaN) FET
Symbol
Parameter
Conditions
Min
Max
Unit
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
-
150
A
03aa16
aaa-028050
120
100
I
D
(A)
D = 10%
D = 20%
D = 50%
P
der
(%)
80
60
40
20
0
80
40
DC
0
0
50
100
150
200
25
50
75
100
125
150
mb
175
(°C)
200
T
T
(°C)
mb
VGS ≥ 10 V; Pulse width ≤ 10 µs
Fig. 2. Drain current as a function of mounting base
temperature
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
aaa-028052
3
10
I
D
(A)
2
t
p
= 1 µs
10
100 µs
10 µs
10
1 ms
10 ms
1
-1
10
-2
10
-1
2
3
10
1
10
10
10
V
DS
(V)
Tmb = 25 °C; IDM is a single pulse
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance from Fig. 4
junction to mounting
base
-
-
1.05
K/W
Rth(j-a)
thermal resistance from vertical in free air
junction to ambient
-
-
40
K/W
©
GAN063-650WSA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
20 March 2020
3 / 11
Nexperia
GAN063-650WSA
650 V, 50 mΩ Gallium Nitride (GaN) FET
aaa-028054
10
Z
th(j-mb)
(K/W)
1
δ = 0.5
0.2
-1
10
10
10
0.1
t
p
P
δ =
single shot
T
-2
-3
t
t
p
T
-6
-5
-4
-3
-2
-1
10
10
10
10
10
10
1
t
p
(s)
Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
VGS(th)
gate-source threshold ID = 1 mA; VDS=VGS; Tj = 25 °C
3.4
3.9
-
4.5
-
V
voltage
ID = 1 mA; VDS=VGS; Tj = 175 °C; Fig. 9
2.2
V
ID = 1 mA; VDS=VGS; Tj = -55 °C; Fig. 9
-
-
-
-
-
-
-
-
5.2
25
-
V
IDSS
drain leakage current
gate leakage current
VDS = 650 V; VGS = 0 V; Tj = 25 °C
VDS = 650 V; VGS = 0 V; Tj = 175 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 25 °C
2
µA
µA
nA
nA
mΩ
mΩ
25
10
10
50
120
IGSS
100
100
60
-
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 10
RG
gate resistance
f = 1 MHz
-
2.3
-
Ω
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
ID = 25 A; VDS = 400 V; VGS = 10 V;
Tj = 25 °C
-
-
-
-
-
-
15
6
-
-
-
-
-
-
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
4
VDS = 400 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 11
1000
130
8
Coss
Crss
reverse transfer
capacitance
Co(er)
effective output
capacitance, energy
related
0 V ≤ VDS ≤ 400 V; VGS = 0 V;
Tj = 25 °C; Fig. 12
-
-
190
310
-
-
pF
pF
Co(tr)
effective output
capacitance, time
related
0 V ≤ VDS ≤ 400 V; VGS = 0 V;
Tj = 25 °C
©
GAN063-650WSA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
20 March 2020
4 / 11
Nexperia
GAN063-650WSA
650 V, 50 mΩ Gallium Nitride (GaN) FET
Symbol
td(on)
tr
Parameter
Conditions
Min
Typ
57
Max
Unit
ns
turn-on delay time
rise time
VDS = 400 V; RL = 16 Ω; VGS = 12 V;
RG(ext) = 40 Ω
-
-
-
-
-
-
-
-
-
-
10
ns
td(off)
tf
turn-off delay time
fall time
88
ns
11
ns
Qoss
output charge
VGS = 0 V; VDS = 400 V
125
nC
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 13
IS = 12.5 A; VGS = 0 V; Tj = 25 °C
-
-
-
-
1.9
-
-
-
-
V
1.35
54
V
trr
reverse recovery time IS = 25 A; dIS/dt = -1000 A/µs;
ns
nC
VGS = 0 V; VDS = 400 V; Fig. 14
Qr
recovered charge
125
aaa-028060
aaa-028061
200
150
100
50
100
I
D
I
D
V
= 10 V
GS
(A)
(A)
V
GS
= 10 V
80
60
40
20
0
7.5 V
7 V
8 V
7 V
6 V
6 V
5 V
5 V
0
0
2
4
6
8
DS
10
0
2
4
6
8
DS
10
V
(V)
V
(V)
Tj = 25 °C
Tj = 175 °C
Fig. 6. Output characteristics; drain current as a
Fig. 5. Output characteristics; drain current as a
function of drain-source voltage; typical values
function of drain-source voltage; typical values
aaa-028055
aaa-029173
80
160
I
D
Q
OSS
(A)
(nC)
60
40
20
0
120
80
40
0
175°C
4
T = 25°C
j
0
2
6
8
GS
10
0
100
200
300
400
500
600
(V)
700
V
(V)
V
DS
VDS = 10 V
Fig. 8. Typical QOSS
Fig. 7. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
©
GAN063-650WSA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
20 March 2020
5 / 11
Nexperia
GAN063-650WSA
650 V, 50 mΩ Gallium Nitride (GaN) FET
aaa-029174
aaa-027810
6
3
2.5
2
V
GS(th)
(V)
a
5
4
3
2
1
0
Max
Typ
1.5
1
Min
0.5
0
-60 -30
0
30
60
90 120 150 180
-60 -30
0
30
60
90 120 150 180
T (°C)
T (°C)
j
j
ID = 1 mA ; VDS = VGS
Fig. 9. Gate-source threshold voltage as a function of
junction temperature
Fig. 10. Normalized drain-source on-state resistance
factor as a function of junction temperature
aaa-028058
aaa-028063
4
10
30
C
E
OSS
(pF)
(µJ)
25
20
15
10
5
C
iss
3
2
10
10
C
C
oss
10
1
rss
0
2
3
1
10
10
10
0
100
200
300
400
500
(V)
600
V
(V)
V
DS
DS
VGS = 0 V; f = 1 MHz
Fig. 12. Typical COSS Stored Energy
Fig. 11. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
©
GAN063-650WSA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
20 March 2020
6 / 11
Nexperia
GAN063-650WSA
650 V, 50 mΩ Gallium Nitride (GaN) FET
aaa-028059
150
125
100
75
I
S
T = 25°C
j
(A)
50°C
75°C
100°C
125°C
150°C
175°C
50
25
0
0
2
4
6
8
SD
10
V
(V)
VGS = 0 V
Fig. 13. Source-drain (diode forward) current as a function of source-drain (diode forward) voltage; typical values
I, V
dl /dt
S
I
t
rr
S
t
0.25 I
RM
Q
r
I
RM
V
RRM
A
DUT
-
V
SD
+
aaa-029277
Fig. 14. Diode reverse recovery test circuit and waveform
11. Application information
To achieve maximum efficiency and stability when switching high currents, a switching node RC
snubber (Rsn, Csn) is recommended. For IL < 14 A, a switching-node snubber is not required.
CSN is taken from the graph.
RSN should be selected to achieve a time constant of 1 ns; e.g. if CSN = 100 pF,
RSN = 1 ns / 100 pF = 10 Ω.
©
GAN063-650WSA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
20 March 2020
7 / 11
Nexperia
GAN063-650WSA
650 V, 50 mΩ Gallium Nitride (GaN) FET
aaa-029603
V
DC bus
BUS
180
C
sn
(pF)
160
140
120
100
80
Q
Q
RC
2
driver
driver
DCL
R
R
G
(place as close as
possible to drain pin)
V
V
o
S
1
G
R
SN
RC
SN
C
SN
60
aaa-029331
40
Fig. 16. DC-link snubber circuit
20
0
0
5
10
15
20
25
30
I
35
(A)
40
L
RG = 30 Ω; τ = RSN × CSN = 1 ns
Fig. 15. Snubber capacitance as function of load current
Note: A DC-link snubber is recommended in all cases. Optimal is 20 nF in series with
4 Ω, most easily achieved with parallel combination 10 nF and 8 Ω. This snubber lowers
the Q factor of any resonance in the bus. That resonance will act as a load on the high
gain amplifier that is the GaN FET and can lead to instability. For very high current, an RC
snubber is recommended for the switching node. This will increase switching loss, so this
is only recommended at high power levels where the losses are a very small percentage of
the total power.
©
GAN063-650WSA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
20 March 2020
8 / 11
Nexperia
GAN063-650WSA
650 V, 50 mΩ Gallium Nitride (GaN) FET
12. Package outline
Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247
SOT429
A
E
E
1
A
E
2
D
2
2/2
Q
S
E
2
ØP
D
1
D
ØP
1
1
2
3
L
1
A
1
b
2
(2x)
b
4
L
b
(3x)
e
(2x)
c
0
20 mm
scale
øP
øP
Q
S
1
3.658 7.315 5.740 6.299
3.556 7.061 5.486 6.045
Dimensions (mm are the original dimensions)
Unit
A
A
A
b
b
b
c
D
D
1
D
2
E
E
E
E
e
L
L
1
1
2
2
4
1
2
2/2
max 5.156 2.507 2.108 1.397 2.387 3.429 0.889 21.082 17.441 1.321 16.027 14.148 5.225 2.613
mm nom
min 4.902 2.253 1.854 0.991 1.651 2.591 0.381 20.828 17.187 1.067 15.773 13.894 4.318 2.159
20.320 4.445
20.066 3.937
5.436
sot429_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
TO-247
JEITA
19-08-19
19-08-20
SOT429
Fig. 17. Package outline TO-247 (SOT429)
©
GAN063-650WSA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
20 March 2020
9 / 11
Nexperia
GAN063-650WSA
650 V, 50 mΩ Gallium Nitride (GaN) FET
injury, death or severe property or environmental damage. Nexperia and its
suppliers accept no liability for inclusion and/or use of Nexperia products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
13. Legal information
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Data sheet status
Document status Product
Definition
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
[1][2]
status [3]
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Nexperia product is suitable
and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Nexperia products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Nexperia does not accept any
liability in this respect.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
Definitions
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of commercial sale — Nexperia products are
sold subject to the general terms and conditions of commercial sale, as
published at http://www.nexperia.com/profile/terms, unless otherwise agreed
in a valid written individual agreement. In case an individual agreement is
concluded only the terms and conditions of the respective agreement shall
apply. Nexperia hereby expressly objects to applying the customer’s general
terms and conditions with regard to the purchase of Nexperia products by
customer.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be
valid in which the Nexperia product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
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or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no responsibility
for the content in this document if provided by an information source outside
of Nexperia.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Nexperia product is automotive qualified, the
product is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Nexperia
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
In no event shall Nexperia be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without Nexperia’s warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s own risk,
and (c) customer fully indemnifies Nexperia for any liability, damages or failed
product claims resulting from customer design and use of the product for
automotive applications beyond Nexperia’s standard warranty and Nexperia’s
product specifications.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Nexperia.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Right to make changes — Nexperia reserves the right to make changes
to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Trademarks
Suitability for use — Nexperia products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction
of an Nexperia product can reasonably be expected to result in personal
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
GAN063-650WSA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
20 March 2020
10 / 11
Nexperia
GAN063-650WSA
650 V, 50 mΩ Gallium Nitride (GaN) FET
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 2
9. Thermal characteristics............................................... 3
10. Characteristics............................................................4
11. Application information..............................................7
12. Package outline.......................................................... 9
13. Legal information......................................................10
© Nexperia B.V. 2020. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 20 March 2020
©
GAN063-650WSA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
20 March 2020
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