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GAN140-650FBE [NEXPERIA]

650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm packageProduction;
GAN140-650FBE
型号： GAN140-650FBE
厂家： Nexperia    Nexperia
描述：

650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm packageProduction
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GAN140-650FBE  
5
-
0
6
0
5
N
F
D
650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN  
5 mm x 6 mm package  
19 April 2023  
Product data sheet  
1. General description  
The GAN140-650FBE is a general purpose 650 V, 140 mΩ Gallium Nitride (GaN) FET in a  
DFN 5 mm x 6 mm surface mount package. It is a normally-off e-mode device offering superior  
performance.  
2. Features and benefits  
•
Enhancement mode - normally-off power switch  
•
•
•
•
•
•
•
•
Ultra high frequency switching capability  
No body diode  
Low gate charge, low output charge  
Qualified for standard applications  
ESD protection  
RoHS, Pb-free, REACH-compliant  
High efficiency and high power density  
Low package inductance and low package resistance  
3. Applications  
•
•
•
•
•
•
•
•
High power density and high efficiency power conversion  
AC-to-DC converters, totem pole PFC  
DC-to-DC converters  
Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers  
Datacom and telecom (AC-to-DC and DC-to-DC) converters  
Motor drives  
Solar (PV) inverters  
Class D audio amplifiers, TV PSU and LED drivers  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
VDS  
Parameter  
Conditions  
Min  
Typ  
Max  
650  
800  
Unit  
V
drain-source voltage  
-55 °C ≤ Tj ≤ 150 °C  
pulsed; tp = 1 µs; δfactor = 0.01  
-
-
-
-
VTDS  
transient drain to  
source voltage  
V
ID  
drain current  
VGS = 6 V; Tmb = 25 °C  
[1]  
-
-
-
-
17  
A
Ptot  
Tj  
total power dissipation Tmb = 25 °C; Fig. 1  
junction temperature  
-
113  
150  
W
°C  
-55  
Static characteristics  
RDSon drain-source on-state  
resistance  
VGS = 6 V; ID = 5 A; Tj = 25 °C; Fig. 11;  
Fig. 12; Fig. 13  
-
-
106  
230  
140  
-
mΩ  
mΩ  
VGS = 6 V; ID = 5 A; Tj = 150 °C; Fig. 11;  
Fig. 14  
 
 
 
 
Nexperia  
GAN140-650FBE  
650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
RG  
gate resistance  
f = 5 MHz; Tj = 25 °C; open drain  
-
3.5  
-
Ω
Dynamic characteristics  
QGD  
gate-drain charge  
ID = 5 A; VDS = 400 V; VGS = 6 V;  
Tj = 25 °C; Fig. 15; Fig. 16  
-
-
-
1.2  
3.5  
33  
-
-
-
nC  
nC  
nC  
QG(tot)  
Qoss  
total gate charge  
output charge  
VGS = 0 V; VDS = 400 V; Tj = 25 °C  
[2]  
[1] Limited by device saturation  
[2] Qr is not specified separately from Qoss for e-mode GaN FETs, since Qr = Qoss + QD, and QD = 0. (QD is charge associated with  
diffusion of minority carriers. Since there is no body diode, no minority carriers in excess of Qoss have to be transferred for e-mode  
GaN FETs.)  
5. Pinning information  
Table 2. Pinning information  
Pin  
1
Symbol  
Description  
drain  
Simplified outline  
Graphic symbol  
D
D
D
D
S
4
3
2
1
2
drain  
3
drain  
D
S
4
drain  
5
source  
source  
kelvin source  
gate  
G
KS  
6
S
7
KS  
G
S
aaa-036395  
5
6
7
8
8
Transparent top view  
mb  
mounting base; connected  
to source  
DFN5060-5 (SOT8075-1)  
6. Ordering information  
Table 3. Ordering information  
Type number  
Package  
Name  
Description  
Version  
GAN140-650FBE  
DFN5060-5  
plastic thermal enhanced small outline package; no leads; SOT8075-1  
5 terminals; body: 5 × 6 × 0.9 mm  
7. Marking  
Table 4. Marking codes  
Type number  
Marking code  
140IFBE  
GAN140-650FBE  
8. Limiting values  
Table 5. Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).Tj = 25 °C unless otherwise stated.  
Symbol  
Parameter  
Conditions  
Min  
Max  
Unit  
VDS  
drain-source voltage  
-55 °C ≤ Tj ≤ 150 °C  
-
650  
V
©
GAN140-650FBE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2023. All rights reserved  
Product data sheet  
19 April 2023  
2 / 14  
 
 
 
 
 
Nexperia  
GAN140-650FBE  
650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package  
Symbol  
Parameter  
Conditions  
Min  
Max  
Unit  
VTDS  
transient drain to source pulsed; tp = 1 µs; δfactor = 0.01  
voltage  
-
800  
V
VGS  
Ptot  
ID  
gate-source voltage  
-1.4  
7
V
total power dissipation  
drain current  
Tmb = 25 °C; Fig. 1  
-
113  
17  
W
A
VGS = 6 V; Tmb = 25 °C  
[1]  
[1]  
-
IDM  
Tstg  
Tj  
peak drain current  
storage temperature  
junction temperature  
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 2  
-
32  
A
-55  
-55  
-
150  
150  
260  
°C  
°C  
°C  
Tsld(M)  
peak soldering  
temperature  
[1] Limited by device saturation  
03ne36  
120  
Pder  
(%)  
80  
40  
0
0
50  
100  
150  
200  
°
Tmb ( C)  
Fig. 1. Normalized total power dissipation as a function of mounting base temperature  
aaa-036201  
2
10  
I
D
Limit R = V / I  
DSon DS D  
(A)  
10  
t
p
=10 μS  
DC  
1
100 μS  
1 mS  
-1  
10  
-2  
10  
2
3
1
10  
10  
10  
V
DS  
(V)  
Tmb = 25 °C; IDM is a single pulse  
Fig. 2. Safe operating area; continuous and peak drain currents as a function of drain-source voltage  
©
GAN140-650FBE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2023. All rights reserved  
Product data sheet  
19 April 2023  
3 / 14  
 
 
 
Nexperia  
GAN140-650FBE  
650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package  
9. Thermal characteristics  
Table 6. Thermal characteristics  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Rth(j-c)  
thermal resistance from Fig. 3  
junction to case  
-
-
1.1  
K/W  
Rth(j-a)  
thermal resistance from  
junction to ambient  
-
-
60.3  
K/W  
aaa-036196  
10  
Z
thJc  
(K/W)  
1
-1  
10  
10  
10  
10  
10  
-2  
-3  
-4  
-5  
0.5  
t
p
0.2  
P
δ =  
T
0.1  
0.05  
0.02  
0.01  
t
t
p
T
single shot  
-6  
-8  
-7  
-5  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
10  
10  
10  
10  
T
p
(s)  
Fig. 3. Transient thermal impedance from junction to case as a function of pulse duration  
10. Characteristics  
Table 7. Characteristics  
Symbol  
Static characteristics  
VGS(th) gate-source threshold ID = 17.2 mA; VDS = VGS; Tj = 25 °C;  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
1.2  
1.7  
1.7  
0.6  
7
2.5  
V
voltage  
Fig. 8  
ID = 17.2 mA; VDS = VGS; Tj = 150 °C;  
Fig. 8  
-
-
-
-
-
-
-
-
V
IDSS  
drain leakage current  
VDS = 650 V; VGS = 0 V; Tj = 25 °C;  
Fig. 9  
25  
µA  
µA  
µA  
mΩ  
mΩ  
Ω
VDS = 650 V; VGS = 0 V; Tj = 150 °C;  
Fig. 9  
-
IGSS  
gate leakage current  
VGS = 6 V; VDS = 0 V; Tj = 25 °C;  
Fig. 10  
70  
-
RDSon  
drain-source on-state  
resistance  
VGS = 6 V; ID = 5 A; Tj = 25 °C; Fig. 11;  
Fig. 12; Fig. 13  
106  
230  
3.5  
140  
VGS = 6 V; ID = 5 A; Tj = 150 °C; Fig. 11;  
Fig. 14  
-
-
RG  
gate resistance  
f = 5 MHz; Tj = 25 °C; open drain  
Dynamic characteristics  
QG(tot)  
QGS  
total gate charge  
ID = 5 A; VDS = 400 V; VGS = 6 V;  
Tj = 25 °C; Fig. 15; Fig. 16  
-
-
-
3.5  
0.3  
1.2  
-
-
-
nC  
nC  
nC  
gate-source charge  
gate-drain charge  
QGD  
©
GAN140-650FBE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2023. All rights reserved  
Product data sheet  
19 April 2023  
4 / 14  
 
 
 
Nexperia  
GAN140-650FBE  
650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VGS(pl)  
gate-source plateau  
voltage  
ID = 5 A; VDS = 400 V; Tj = 25 °C;  
Fig. 15  
-
2.1  
-
V
Ciss  
Coss  
Crss  
input capacitance  
output capacitance  
VDS = 400 V; VGS = 0 V; f = 100 kHz;  
Tj = 25 °C; Fig. 17  
-
-
-
125  
41  
-
-
-
pF  
pF  
pF  
reverse transfer  
capacitance  
0.4  
Co(er)  
effective output  
capacitance, energy  
related  
0 V ≤ VDS ≤ 400 V; VGS = 0 V;  
Tj = 25 °C; Fig. 18  
[1]  
[2]  
-
-
59  
82  
-
-
pF  
pF  
Co(tr)  
effective output  
capacitance, time  
related  
0 V ≤ VDS ≤ 400 V; VGS = 0 V;  
Tj = 25 °C  
td(on)  
tr  
td(off)  
tf  
turn-on delay time  
rise time  
VDS = 400 V; VGS = 6 V; Tj = 25 °C; ID  
= 10 A; L = 318 μH; Ron = 10 Ω; Roff = 2  
Ω; Fig. 19; Fig. 20  
-
-
-
-
-
3
-
-
-
-
-
ns  
ns  
ns  
ns  
nC  
5
turn-off delay time  
fall time  
4
4
Qoss  
output charge  
VGS = 0 V; VDS = 400 V; Tj = 25 °C  
[3]  
33  
Source-drain characteristics  
VSD source-drain voltage  
IS = 5 A; VGS = 0 V; Tj = 25 °C; Fig. 21;  
Fig. 22; Fig. 23; Fig. 24  
-
2.4  
-
V
[1] CO(er) is the fixed capacitance that gives the same stored energy as COSS while VDS is rising from 0 to 400 V  
[2] CO(tr) is the fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 400 V  
[3] Qr is not specified separately from Qoss for e-mode GaN FETs, since Qr = Qoss + QD, and QD = 0. (QD is charge associated with  
diffusion of minority carriers. Since there is no body diode, no minority carriers in excess of Qoss have to be transferred for e-mode  
GaN FETs.)  
aaa-036170  
aaa-036171  
50  
40  
30  
20  
10  
0
25  
20  
15  
10  
5
I
D
I
D
(A)  
(A)  
V
= 6V  
GS  
V
V
V
= 6V  
GS  
GS  
GS  
= 5V  
= 4V  
V
V
= 5V  
= 4V  
GS  
GS  
V
= 3V  
= 2V  
GS  
GS  
V
V
= 3V  
= 2V  
GS  
V
GS  
0
0
1
2
3
4
5
(V)  
6
0
1
2
3
4
5
(V)  
6
V
V
DS  
DS  
Tj = 25 °C  
Tj = 125 °C  
Fig. 4. Output characteristics: drain current as a  
function of drain-source voltage; typical values  
Fig. 5. Output characteristics: drain current as a  
function of drain-source voltage; typical values  
©
GAN140-650FBE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2023. All rights reserved  
Product data sheet  
19 April 2023  
5 / 14  
 
Nexperia  
GAN140-650FBE  
650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package  
aaa-036191  
aaa-036198  
30  
45  
I
Q
(nC)  
D
OSS  
T
C
= 25°C  
(A)  
24  
18  
12  
6
36  
27  
18  
9
T
C
= 125°C  
0
0
0
1
2
3
4
5
(V)  
6
0
100  
200  
300  
400  
500  
(V)  
600  
V
GS  
V
DS  
Freq. = 100 kHz  
Fig. 6. Transfer characteristics; drain current as a  
function of gate-source voltage; typical values Fig. 7. Output charge as a function of drain-source  
voltage; typical values  
aaa-036194  
aaa-036193  
-4  
-5  
-6  
-7  
-8  
-9  
3
10  
V
I
GS(th)  
(V)  
DSS  
(A)  
10  
2.4  
1.8  
1.2  
0.6  
0
T
= 125°C  
C
10  
10  
10  
10  
T
= 25°C  
C
-10  
10  
-50 -25  
0
25  
50  
75 100 125 150  
0
100 200 300 400 500 600 700 800  
(V)  
T
J
(°C)  
V
DS  
ID = 17.2 mA ; VDS = VGS  
VGS = 0 V  
Fig. 8. Gate-source threshold voltage as a function of Fig. 9. Drain-source current as a function of drain-  
junction temperature  
source voltage; typical values  
©
GAN140-650FBE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2023. All rights reserved  
Product data sheet  
19 April 2023  
6 / 14  
 
 
Nexperia  
GAN140-650FBE  
650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package  
aaa-036192  
aaa-036195  
1.2 m  
3
2.5  
2
I
a
GS  
(A)  
0.8 m  
Drain open  
0.4 m  
0 m  
1.5  
1
ESD protect  
-0.4 m  
-0.8 m  
0.5  
0
-2  
0
2
4
6
8
(V)  
10  
-50 -25  
0
25  
50  
75 100 125 150  
V
GS  
T (°C)  
J
Ig reverse turn on by ESD unit  
Fig. 10. Gate-source current as a function of gate-  
source voltage; typical values  
Fig. 11. Normalized drain-source on-state resistance  
factor as a function of junction temperature  
aaa-036508  
aaa-036172  
400  
0.5  
R
(mΩ)  
R
DSon  
(Ω)  
DSon  
2.0 V  
3.0 V  
I
I
I
I
I
= 2A  
= 4A  
= 6A  
= 8A  
= 10A  
D
D
D
D
D
0.4  
300  
0.3  
0.2  
0.1  
0
4.0 V  
200  
100  
0
5.0 V  
V
GS  
= 6.0 V  
0
10  
20  
30  
40  
I (A)  
50  
0
1
2
3
4
5
(V)  
6
V
GS  
D
Tj = 25 °C  
T j = 25 °C  
Fig. 12. Drain-source on-state resistance as a function Fig. 13. Drain-source on-state resistance as a function  
of drain current ; typical values  
of gate-source voltage; typical values  
©
GAN140-650FBE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2023. All rights reserved  
Product data sheet  
19 April 2023  
7 / 14  
 
 
 
 
Nexperia  
GAN140-650FBE  
650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package  
aaa-036173  
2
R
DSon  
(Ω)  
V
DS  
1.6  
I
D
I
I
I
I
I
=2A  
=4A  
=6A  
=8A  
=10A  
D
D
1.2  
0.8  
0.4  
0
D
D
D
V
V
GS(pl)  
GS(th)  
V
GS  
Q
GS2  
Q
GS1  
Q
Q
GS  
GD  
0
1
2
3
4
5
(V)  
6
V
GS  
Q
G(tot)  
003aaa508  
Tj = 125 °C  
Fig. 15. Gate charge waveform definitions  
Fig. 14. Drain-source on-state resistance as a function  
of gate-source voltage; typical values  
aaa-036200  
aaa-036197  
3
6
10  
V
GS  
C
XSS  
(V)  
(pF)  
5
4
3
2
1
0
C
ISS  
2
10  
C
OSS  
RSS  
10  
C
1
-1  
10  
-1  
2
3
0
0.5  
1
1.5  
2
2.5  
(nC)  
3
10  
1
10  
10  
V
10  
Q
G
(V)  
DS  
TJ = 25 ° C ; ID = 5 A  
Fig. 17. Input, output and reverse transfer capacitances  
as a function of drain-source voltage; typical  
values  
Fig. 16. Gate-source voltage as a function of gate  
charge; typical values  
©
GAN140-650FBE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2023. All rights reserved  
Product data sheet  
19 April 2023  
8 / 14  
 
 
 
 
Nexperia  
GAN140-650FBE  
650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package  
aaa-036199  
10  
Eoss  
L
D
(µJ)  
+
8
6
4
2
0
C
V
dc  
dc  
Drain  
R
G(ON)  
PWM  
Gate  
Driver  
DUT  
R
G(OFF)  
Source  
aaa-036287  
VDS = 400 V; ID = 10 A; L = 318 μH; VGS = 6 V;  
Ron = 10 Ω; Roff = 2 Ω  
Fig. 19. Typical switching times with inductive load  
0
100  
200  
300  
400  
500  
(V)  
600  
V
DS  
Freq. = 100 kHz  
Fig. 18. COSS stored energy as a function of drain-  
source voltage; typical values  
aaa-036187  
V
DS  
0
90 %  
I
D
(A)  
-5  
-10  
-15  
-20  
-25  
10 %  
V
GS  
V
= -1V  
V
= 0V  
t
r
t
f
GS  
GS  
t
t
d(off)  
d(on)  
t
t
off  
on  
aaa-032510  
Fig. 20. Switching time waveform  
-10  
-8  
-6  
-4  
-2  
(V)  
0
V
DS  
Tj = 25 °C  
Fig. 21. Source current as a function of source-drain  
voltage; typical values  
©
GAN140-650FBE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2023. All rights reserved  
Product data sheet  
19 April 2023  
9 / 14  
 
 
 
 
Nexperia  
GAN140-650FBE  
650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package  
aaa-036188  
aaa-036189  
0
0
-5  
I
D
I
D
(A)  
(A)  
V
GS  
V
GS  
V
GS  
V
GS  
= 0V  
= 2V  
= 4V  
= 6V  
-3  
-6  
-10  
-15  
-20  
-25  
V
GS  
= -1V  
V
= 0V  
GS  
-9  
-12  
-15  
-10  
-8  
-6  
-4  
-2  
(V)  
0
-10  
-8  
-6  
-4  
-2  
V (V)  
DS  
0
V
DS  
Tj = 125 °C  
Tj = 25 °C  
Fig. 22. Source current as a function of source-drain  
voltage; typical values  
Fig. 23. Source current as a function of source-drain  
voltage; typical values  
aaa-036190  
0
I
D
(A)  
-5  
-10  
-15  
-20  
-25  
V
GS  
V
GS  
V
GS  
V
GS  
= 0V  
= 2V  
= 4V  
= 6V  
-10  
-8  
-6  
-4  
-2  
(V)  
0
V
DS  
Tj = 125 °C  
Fig. 24. Source current as a function of source-drain voltage; typical values  
©
GAN140-650FBE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2023. All rights reserved  
Product data sheet  
19 April 2023  
10 / 14  
 
 
 
Nexperia  
GAN140-650FBE  
650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package  
11. Package outline  
DFN5060-5: plastic thermal enhanced small outline package; no leads;  
5 terminals; body: 5 × 6 × 0.9 mm  
SOT8075-1  
1
4
L
D
1
v
C A  
B
e
1
9
E
1
detail X  
k
L (4×)  
8
5
A
e
(6×)  
C
v
C
C
A
B
A
2
w
b (8×)  
seating plane  
A
1
y
C
(6×)  
X
u
C
E
terminal 1  
index area  
0
5 mm  
scale  
B
D
A
Dimensions (mm are the original dimensions)  
Unit  
A
A
A
b
D
D
E
6
E
e
e
1
k
L
u
v
w
y
1
2
1
1
max 1.0 0.05  
mm nom 0.9 0.02  
0.50  
0.45  
0.40  
4.36  
4.26  
4.16  
2.15  
2.05  
1.95  
0.775  
0.203  
REF  
5
BSC  
1.27 0.8 0.5  
BSC BSC REF  
0.675 0.1 0.1 0.05 0.1  
0.575  
BSC  
0.8 0.00  
min  
sot8075-1_po  
References  
Outline  
version  
European  
projection  
Issue date  
23-03-03  
IEC  
JEDEC  
JEITA  
MO-229  
SOT8075-1  
compatible  
Fig. 25. Package outline DFN5060-5 (SOT8075-1)  
©
GAN140-650FBE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2023. All rights reserved  
Product data sheet  
19 April 2023  
11 / 14  
 
Nexperia  
GAN140-650FBE  
650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package  
12. Soldering  
Footprint information for reflow soldering of DFN5060-5 package  
SOT8075-1  
5.4  
0.7  
(4×)  
0.55  
(4×)  
1.35  
0.5  
(4×)  
1
(4×)  
1.1  
(4×)  
1.25  
(4×)  
3.45  
0.575  
(2×)  
2.3  
2.15  
0.8  
(6×)  
0.8  
7.35  
1.1  
(6×)  
4.36  
4.51  
0.4  
(3×)  
3.45  
1.05  
(4×)  
1.15  
1.3  
0.65 0.65  
(3×) (3×)  
0.45  
(4×)  
0.28  
(3×)  
1.27  
(2×)  
0.55  
(4×)  
0.7  
(4×)  
1.27  
(6×)  
4.51  
recommended stencil thickness: 0.125 mm  
occupied area  
solder resist  
solder paste  
solder land  
Dimensions in mm  
23-03-17  
Issue date  
sot8075-1_fr  
Fig. 26. Reflow soldering footprint for DFN5060-5 (SOT8075-1)  
©
GAN140-650FBE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2023. All rights reserved  
Product data sheet  
19 April 2023  
12 / 14  
 
Nexperia  
GAN140-650FBE  
650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package  
injury, death or severe property or environmental damage. Nexperia and its  
suppliers accept no liability for inclusion and/or use of Nexperia products in  
such equipment or applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
13. Legal information  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Data sheet status  
Document status Product  
Definition  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. Nexperia makes no representation  
or warranty that such applications will be suitable for the specified use  
without further testing or modification.  
[1][2]  
status [3]  
Objective [short]  
data sheet  
Development  
This document contains data from  
the objective specification for  
product development.  
Customers are responsible for the design and operation of their applications  
and products using Nexperia products, and Nexperia accepts no liability for  
any assistance with applications or customer product design. It is customer’s  
sole responsibility to determine whether the Nexperia product is suitable  
and fit for the customer’s applications and products planned, as well as  
for the planned application and use of customer’s third party customer(s).  
Customers should provide appropriate design and operating safeguards to  
minimize the risks associated with their applications and products.  
Preliminary [short]  
data sheet  
Qualification  
Production  
This document contains data from  
the preliminary specification.  
Product [short]  
data sheet  
This document contains the product  
specification.  
[1] Please consult the most recently issued document before initiating or  
completing a design.  
Nexperia does not accept any liability related to any default, damage, costs  
or problem which is based on any weakness or default in the customer’s  
applications or products, or the application or use by customer’s third party  
customer(s). Customer is responsible for doing all necessary testing for the  
customer’s applications and products using Nexperia products in order to  
avoid a default of the applications and the products or of the application or  
use by customer’s third party customer(s). Nexperia does not accept any  
liability in this respect.  
[2] The term 'short data sheet' is explained in section "Definitions".  
[3] The product status of device(s) described in this document may have  
changed since this document was published and may differ in case of  
multiple devices. The latest product status information is available on  
the internet at https://www.nexperia.com.  
Definitions  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those  
given in the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. Nexperia does not give any representations or  
warranties as to the accuracy or completeness of information included herein  
and shall have no liability for the consequences of use of such information.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is  
intended for quick reference only and should not be relied upon to contain  
detailed and full information. For detailed and full information see the relevant  
full data sheet, which is available on request via the local Nexperia sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Terms and conditions of commercial sale — Nexperia products are  
sold subject to the general terms and conditions of commercial sale, as  
published at http://www.nexperia.com/profile/terms, unless otherwise agreed  
in a valid written individual agreement. In case an individual agreement is  
concluded only the terms and conditions of the respective agreement shall  
apply. Nexperia hereby expressly objects to applying the customer’s general  
terms and conditions with regard to the purchase of Nexperia products by  
customer.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
Nexperia and its customer, unless Nexperia and customer have explicitly  
agreed otherwise in writing. In no event however, shall an agreement be  
valid in which the Nexperia product is deemed to offer functions and qualities  
beyond those described in the Product data sheet.  
No offer to sell or license — Nothing in this document may be interpreted  
or construed as an offer to sell products that is open for acceptance or the  
grant, conveyance or implication of any license under any copyrights, patents  
or other industrial or intellectual property rights.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
Disclaimers  
Limited warranty and liability — Information in this document is believed  
to be accurate and reliable. However, Nexperia does not give any  
representations or warranties, expressed or implied, as to the accuracy  
or completeness of such information and shall have no liability for the  
consequences of use of such information. Nexperia takes no responsibility  
for the content in this document if provided by an information source outside  
of Nexperia.  
Non-automotive qualified products — Unless this data sheet expressly  
states that this specific Nexperia product is automotive qualified, the  
product is not suitable for automotive use. It is neither qualified nor tested in  
accordance with automotive testing or application requirements. Nexperia  
accepts no liability for inclusion and/or use of non-automotive qualified  
products in automotive equipment or applications.  
In no event shall Nexperia be liable for any indirect, incidental, punitive,  
special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal  
or replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards,  
customer (a) shall use the product without Nexperia’s warranty of the  
product for such automotive applications, use and specifications, and (b)  
whenever customer uses the product for automotive applications beyond  
Nexperia’s specifications such use shall be solely at customer’s own risk,  
and (c) customer fully indemnifies Nexperia for any liability, damages or failed  
product claims resulting from customer design and use of the product for  
automotive applications beyond Nexperia’s standard warranty and Nexperia’s  
product specifications.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, Nexperia’s aggregate and cumulative liability towards customer  
for the products described herein shall be limited in accordance with the  
Terms and conditions of commercial sale of Nexperia.  
Translations — A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
Right to make changes — Nexperia reserves the right to make changes  
to information published in this document, including without limitation  
specifications and product descriptions, at any time and without notice. This  
document supersedes and replaces all information supplied prior to the  
publication hereof.  
Trademarks  
Suitability for use — Nexperia products are not designed, authorized or  
warranted to be suitable for use in life support, life-critical or safety-critical  
systems or equipment, nor in applications where failure or malfunction  
of an Nexperia product can reasonably be expected to result in personal  
Notice: All referenced brands, product names, service names and  
trademarks are the property of their respective owners.  
©
GAN140-650FBE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2023. All rights reserved  
Product data sheet  
19 April 2023  
13 / 14  
 
Nexperia  
GAN140-650FBE  
650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package  
Contents  
1. General description......................................................1  
2. Features and benefits.................................................. 1  
3. Applications.................................................................. 1  
4. Quick reference data....................................................1  
5. Pinning information......................................................2  
6. Ordering information....................................................2  
7. Marking..........................................................................2  
8. Limiting values............................................................. 2  
9. Thermal characteristics............................................... 4  
10. Characteristics............................................................4  
11. Package outline........................................................ 11  
12. Soldering................................................................... 12  
13. Legal information......................................................13  
© Nexperia B.V. 2023. All rights reserved  
For more information, please visit: http://www.nexperia.com  
For sales office addresses, please send an email to: salesaddresses@nexperia.com  
Date of release: 19 April 2023  
©
GAN140-650FBE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2023. All rights reserved  
Product data sheet  
19 April 2023  
14 / 14  

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