MMBT2222A [NEXPERIA]

NPN switching transistorProduction;


型号：	MMBT2222A
厂家：	Nexperia
描述：	NPN switching transistorProduction IOT 开关光电二极管晶体管
文件：	总8页 (文件大小：338K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Important notice

Dear Customer,

On 7 February 2017 the former NXP Standard Product business became a new company with the

tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS

semiconductors with its focus on the automotive, industrial, computing, consumer and wearable

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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use

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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on

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DISCRETE SEMICONDUCTORS

DATA SHEET

MMBT2222A

NPN switching transistor

Product data sheet

2004 Jan 16

Supersedes data of 2000 Apr 11

NXP Semiconductors

Product data sheet

NPN switching transistor

MMBT2222A

FEATURES

PINNING

• High current (max. 600 mA)

• Low voltage (max. 40 V).

DESCRIPTION

base

emitter

APPLICATIONS

collector

• Switching and linear amplification.

DESCRIPTION

handbook, halfpage

NPN switching transistor in a SOT23 plastic package.

PNP complement: PMBT2907A.

MARKING

TYPE NUMBER

MMBT2222A

MARKING CODE⁽¹⁾

7C*

Top view

MAM255

Note

1. * = p : Made in Hong Kong.

* = t : Made in Malaysia.

* = W : Made in China.

Fig.1 Simplified outline (SOT23) and symbol.

ORDERING INFORMATION

TYPE

PACKAGE

DESCRIPTION

plastic surface mounted package; 3 leads

NUMBER

NAME

VERSION

MMBT2222A

−

SOT23

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS

V_CBOcollector-base voltage open emitter

MIN. MAX. UNIT

−

V_CEO

V_EBO

I_C

collector-emitter voltage

emitter-base voltage

collector current (DC)

peak collector current

peak base current

open base

−

open collector

−

600

800

200

250

+150

150

+150

°C

I_CM

I_BM

−

P_tot

T_stg

T_j

total power dissipation

storage temperature

junction temperature

operating ambient temperature

T_amb≤ 25 °C; note 1

−

−65

−

T_amb

−65

Note

1. Transistor mounted on an FR4 printed-circuit board.

2004 Jan 16

NXP Semiconductors

Product data sheet

NPN switching transistor

MMBT2222A

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

thermal resistance from junction to ambient note 1

CONDITIONS

VALUE

UNIT

R_th(j-a)

500

K/W

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

T_j= 25 °C unless otherwise specified.

SYMBOL

I_CBO

PARAMETER

collector cut-off current

CONDITIONS

I_E= 0; V_CB= 60 V

MIN. MAX. UNIT

−

µA

I_E= 0; V_CB= 60 V; T_j= 125 °C

I_C= 0; V_EB= 5 V

−

I_EBO

h_FE

emitter cut-off current

DC current gain

−

I_C= 0.1 mA; V_CE= 10 V

I_C= 1 mA; V_CE= 10 V

I_C= 10 mA; V_CE= 10 V

−

I_C= 10 mA; V_CE= 10 V;

−

T_amb= −55 °C

I_C= 150 mA; V_CE= 10 V

100

−

300

−

I_C= 150 mA; V_CE= 1 V

I_C= 500 mA; V_CE= 10 V

−

V_CEsat

collector-emitter saturation voltage

base-emitter saturation voltage

I_C= 150 mA; I_B= 15 mA; note 1

I_C= 500 mA; I_B= 50 mA; note 1

300

−

V_BEsat

I_C= 150 mA; I_B= 15 mA; note 1 0.6

1.2

I_C= 500 mA; I_B= 50 mA; note 1

−

C_c

C_e

f_T

collector capacitance

emitter capacitance

transition frequency

noise figure

I_E= i_e= 0; V_CB= 10 V;

f = 1 MHz

I_C= i_c= 0; V_EB= 500 mV;

f = 1 MHz

−

I_C= 20 mA; V_CE= 20 V;

f = 100 MHz

300

−

MHz

I_C= 100 µA; V_CE= 5 V;

R_S= 1 kΩ; f = 1 kHz

Switching times (between 10% and 90% levels); (see Fig.2)

t_on

t_d

t_r

turn-on time

delay time

rise time

I_Con= 150 mA; I_Bon= 15 mA;

I_Boff= −15 mA

−

t_off

t_s

turn-off time

storage time

fall time

250

200

t_f

Note

1. Pulse test: t_p≤ 300 µs; δ ≤ 0.02.

2004 Jan 16

NXP Semiconductors

Product data sheet

NPN switching transistor

MMBT2222A

handbook, full pagewidth

(probe)

oscilloscope

450 Ω

DUT

MLB826

V_i= 9.5 V; T = 500 µs; t_p= 10 µs; t_r= t_f≤ 3 ns.

R1 = 68 Ω; R2 = 325 Ω; R_B= 325 Ω; R_C= 160 Ω.

V_BB= −3.5 V; V_CC= 29.5 V.

Oscilloscope: input impedance Z_i= 50 Ω.

Fig.2 Test circuit for switching times.

2004 Jan 16

NXP Semiconductors

Product data sheet

NPN switching transistor

MMBT2222A

PACKAGE OUTLINE

Plastic surface-mounted package; 3 leads

SOT23

w M

detail X

2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

max.

1.1

0.9

0.48

0.38

0.15

0.09

3.0

2.8

1.4

1.2

2.5

2.1

0.45

0.15

0.55

0.45

0.1

1.9

0.95

0.2

0.1

REFERENCES

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

JEDEC

JEITA

04-11-04

06-03-16

SOT23

TO-236AB

2004 Jan 16

NXP Semiconductors

Product data sheet

NPN switching transistor

MMBT2222A

DATA SHEET STATUS

DOCUMENT

STATUS⁽¹⁾

PRODUCT

STATUS⁽²⁾

DEFINITION

Objective data sheet

Development

This document contains data from the objective specification for product

development.

Preliminary data sheet

Product data sheet

Qualification

Production

This document contains data from the preliminary specification.

This document contains the product specification.

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product status of device(s) described in this document may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DISCLAIMERS

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

General ⎯ Information in this document is believed to be

accurate and reliable. However, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequences of use of such information.

Terms and conditions of sale ⎯ NXP Semiconductors

products are sold subject to the general terms and

conditions of commercial sale, as published at

http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

otherwise agreed to in writing by NXP Semiconductors. In

case of any inconsistency or conflict between information

in this document and such terms and conditions, the latter

will prevail.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to information

published in this document, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereof.

Suitability for use ⎯ NXP Semiconductors products are

not designed, authorized or warranted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

expected to result in personal injury, death or severe

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefore such inclusion and/or use is at

the customer’s own risk.

No offer to sell or license ⎯ Nothing in this document

may be interpreted or construed as an offer to sell products

that is open for acceptance or the grant, conveyance or

implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control ⎯ This document as well as the item(s)

described herein may be subject to export control

regulations. Export might require a prior authorization from

national authorities.

Quick reference data ⎯ The Quick reference data is an

extract of the product data given in the Limiting values and

Characteristics sections of this document, and as such is

not complete, exhaustive or legally binding.

Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use without further testing or modification.

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratings only and

2004 Jan 16

NXP Semiconductors

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were

made to the content, except for the legal definitions and disclaimers.

Contact information

For additional information please visit: http://www.nxp.com

For sales offices addresses send e-mail to: salesaddresses@nxp.com

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

R75/02/pp7

Date of release: 2004 Jan 16

Document order number: 9397 750 12432

MMBT2222A [NEXPERIA]

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